分布布喇格反射镜的反射特性

采用等效法布里珀罗(FP)腔方法对分布布喇格反射镜(DBR)的特性进行了研究,计算并讨论了上下两层DBR结构非对称模型反射率的变化.设计了DBR反射镜的反射谱中心波长为850nm的结构.随着DBR周期数的增加,腔反射率峰值逐渐增加.上下两层DBR反射镜的厚度由反射率和中心波长决定.实验表明,下DBR的周期数为30对左右,上DBR的周期数为20对左右,易实现激光输出.非对称的双层DBR的反射特性表明理论计算与实验结果基本一致.     

周期结构薄膜在折射率色散下反射区特性研究

周期性结构是光学薄膜设计的基本物理模型,给出了反射区中心波长的一般性条件,研究了在膜层材料存在折射率色散情况下,等厚周期结构和非等厚周期结构的薄膜反射区中心波长与带宽特性.研究结果表明:在等厚和非等厚周期结构中,考虑膜层材料折射率色散与忽略色散情况相比,中心波长向长波方向移动,反射级次与相对波数的线性关系偏离;在薄膜光学厚度一定的非等厚周期结构中,高折射率层光学厚度大于低折射率层时,反射级次与相对波数的线性关系偏离度高;非等厚周期结构薄膜的带宽在低反射级次上小于等厚周期结构,同时膜层的色散对反射带宽影响不大.     

吸收对垂直腔面发射激光器光学特性的影响

采用光学传输矩阵方法，详细分析了反射镜以及键合界面的吸收对垂直腔面发射激光器光学特性的影响. 结果表明，反射镜以及键合界面的吸收对反射镜和垂直腔面发射激光器的反射率和势透射率有较大影响，而对反射镜中心波长处的反射相移以及垂直腔面发射激光器模式的反射相移和模式位置影响很小. 随着反射镜以及键合界面的吸收增大，反射镜中心波长处的反射率逐渐减小，垂直腔面发射激光器的模式反射率变化则是先急剧减小，达到一个极小值，然后再逐渐增大，而反射镜中心波长处以及垂直腔面发射激光器模式处的势透射率则都是迅速降低的. 此外，将有吸收的键合界面离有源区的距离远一些，有利于提高垂直腔面发射激光器模式处的光输出效率.     

大口径反射镜高反射膜研究进展

大口径反射镜是大型反射式光学系统中关键的光学元件,在工作波段的反射率直接决定了光学系统的性能。随着地基、天基观测设备的发展,对大口径反射镜高反射膜提出了更宽的工作波段、更高的反射率、更好的环境适应性等要求。针对这些挑战,各种新的膜系结构、新的镀制方法、新的膜层材料纷纷出现,满足了大口径反射镜高反射膜的各种需求。本文对近些年国内外的大口径反射镜高反射膜研究进展予以综述,并预测大口径反射镜高反膜制备的技术趋势将由铝反射膜向银反射膜、由热蒸发向磁控溅射发展。     

一种具有低折射率的高对比度光栅反射镜的设计

设计并研究了一种工作于2 μm波段的GaSb基亚波长高对比度光栅反射镜,其具有低折射率光栅层结构。通过严格耦合波理论优化结构,以最大限度地满足VCSEL腔面反射镜对反射率带宽的要求。反射镜对2 μm波段的TM模式具有优良的反射效率,带宽与设计波长之比达15%（反射率R>99%）,在反射率R>99.9%的部分Δλ/λ₀>9.5%,带宽中心波长为2.003 μm,与此同时TE模的反射率不超过70.20%。该反射镜结构中几个参数的制作容差较大,且厚度低于1.1 μm,有利于在垂直腔面发射半导体激光器上的单片集成。     

宽截止窄带高反射滤光膜设计

窄带高反射滤光膜在光通讯、光学探测仪器等领域有着重要应用.探讨了"基片|H(LH)m1aL(HL)m2βCr,M|空气"膜系结构的窄带高反射滤光膜系,讨论了金属Cr层厚度,以及两种不同的匹配膜系对滤光膜特性的影响,计算了Cr层内部的电场分布.结果表明,较厚的金属层可实现更宽的截止带宽,匹配层的加入有效地实现了宽截止带的深截止,使中心波长处导纳为较大值的匹配膜系可以更好地实现滤光膜宽截止、窄带高反射特性;匹配膜层使中心波长处Cr层内部的电场强度趋于零,有效地降低了整个膜系的吸收,提高了反射率.     

真空紫外波段铝反射膜制备

为制备出在130～210nm波段具有良好光谱性能的铝反射膜,优化设计了铝反射镜中铝层和保护层氟化镁的厚度,理论确定铝层和氟化镁保护层最佳厚度分别为80nm和33nm。采用热舟蒸发工艺,在BK7基片上制备了Al反射膜样品,获得了130～210nm波长范围内反射率均大于80%的金属铝膜。研究了铝层沉积速率和紫外辐照处理对薄膜性能的影响,并考察了铝膜光谱性能的时效性。结果表明铝层沉积速率越快,制备的铝膜反射率越高;合理地存放铝膜元件,可以长时间内保持铝膜的光谱性能。适当的紫外辐照处理能进一步提高铝膜在真空紫外波段的反射率。     

典型煤的近红外反射光谱特征的方向性研究

高光谱遥感是煤矿区探测的有效方法,对于煤炭资源调查、矿区环境监测等具有重要意义,其中煤、矸石、植被、水体等被遥测物各个方向的反射光谱特征是煤矿高光谱遥感的基础,为此有必要针对典型煤的方向反射光谱特征进行研究。从我国不同矿区收集了无烟煤、烟煤、褐煤三大类煤中的4种典型煤样,4种煤样按煤阶由高到低顺序包括无烟煤一号、贫煤、气煤、褐煤二号,在实验室利用方向反射测量球坐标实验装置测定了每种煤样半球空间各反射方向的近红外波段(1 000~2 500 nm)反射光谱曲线。通过对反射光谱曲线波形分析,发现同一种煤不同反射方向的近红外反射光谱波形基本相似,但在整体反射率大小和局部波形特征上具有差异性,光谱曲线整体反射率越大,吸收谷越明显。随反射角增大,4种煤在前向反射方向(180°探测方位角)反射光谱曲线均整体上升,在后向反射方向(0°探测方位角)反射光谱曲线高度变化相对较小。在每种煤半球空间各反射方向的反射光谱曲线中,选取了1 400,1 700,1 900,2 200和2 300 nm 5个特征波长,通过分析此5个特征波长处的反射率空间分布极坐标云图,发现4种煤在5个特征波长点处均具有一定的双向反射特征,均表现出较明显的前向反射热点特征和相对较弱的后向反射热点特征,无烟煤一号后向反射热点特征比贫煤、气煤、褐煤二号更明显,贫煤、气煤、褐煤二号随煤阶降低后向反射热点特征逐渐增强。每种煤前、后向反射方向的反射光谱中,通过对5个特征波长处反射率与反射角进行相关性分析,发现前向反射特征波长反射率与反射角近似呈线性函数关系,后向反射特征波长反射率与反射角近似呈高斯函数关系,且高斯函数拟合曲线波峰随煤阶降低向较大反射角度移动。该研究为矿区煤炭高光谱遥感最优探测几何的选择提供了依据,也为矿区煤炭资源精准探测提供了参考。     

非线性一维光子晶体反射谱的多值特征研究

以含有一层kerr非线性介质的一维光子晶体为对象,基于子层逆向递推算法,给出了非线性反射谱一种简单有效的数值计算方法.基于此方法得到了该结构在1 535~1 565nm范围内的非线性反射谱.当输入光强高于阈值时,缺陷模缓慢移动并出现弯曲倾斜的多值特征.分析了上跳波长、下跳波长随输入光强的变化趋势.研究了线性周期介质和非线性介质结构参数对反射谱的影响.研究表明:增加周期介质的周期、高低折射率比和非线性层厚度都能使缺陷模变窄,输入光强阈值和上跳波长、下跳波长的阈值波长降低;而非线性介质的三阶非线性系数增大时,输入光强阈值降低,但缺陷模宽度、上跳波长和下跳波长的阈值波长没有明显改变.这种多值特征对于设计光学开关、光学滤波器等有着重要的指导作用.     

重铬酸盐明胶反射全息图的波长调节新技术研究

介绍了一种采用有机预膨胀剂调节李普曼反射全息图再现波长的新方法. 将水溶性的有机试剂丙稀酰胺作为预膨胀剂均匀加入亚甲基蓝敏化的重铬酸盐明胶（MBDCG）溶液中来制作全息干板,预膨胀剂在反射全息图的后处理阶段溶于水,明胶层发生均匀收缩,从而使再现波长向短波方向移动. 通过控制丙稀酰胺浓度,可在整个可见光区大范围定量控制再现波长.     

Stable single-mode operation of VCSELs with a mode selective aperture

We have developed single-mode vertical-cavity surface-emitting laser (VCSELs) with a mode selective aperture (MSA) in the DBR mirror that exhibits a high-order transverse-mode filtering effect. The VCSELs with an MSA were fabricated using standard intracavity-contacted VCSEL processes without any additional steps resulting from the simultaneous formation of the MSA and current aperture via a single-step oxidation. The VCSELs fabricated with a current aperture and MSA diameter of 5 and 7 μm, respectively, exhibited a stable single-mode operation with a side mode suppression ratio of over 35 dB and a divergence angle below 10° for the entire drive current range. PACS 42.55.Px; 85.35.Be     

Modeling of resistance characteristics of a continuously-graded distributed Bragg reflector in a 980-nm vertical-cavity surface-emitting laser

The resistance characteristics of a continuously-graded distributed Bragg reflector(DBR) in a 980-nm verticalcavity surface-emitting laser(VCSEL) are modeled in detail.The junction resistances between the layers of both the p-and n-DBR mirrors are analysed by combining the thermionic emission model and the finite difference method.In the meantime,the intrinsic resistance of the DBR material system is calculated to make a comparison with the junction resistance.The minimal values of series resistances of the graded p-and n-type DBR mirrors and the lateral temperature-dependent resistance variation are calculated and discussed.The result indicates the potential to optimize the design of the DBR reflectors of the 980-nm VCSELs.     

光反馈诱发长波长垂直腔面发射激光器低功耗偏振开关

基于扩展的自旋反转模型,对光反馈诱发下长波长垂直腔面发射激光器中的低功耗偏振开关进行了理论研究.研究表明:长波长垂直腔面发射激光器在自由运行下未能获得的偏振开关现象,可以通过引入中等强度的偏振旋转光反馈来实现.对比强弱两种不同的线性色散效应,发现了一些有趣的现象:弱线性色散条件下更易于在低注入电流下获得偏振开关,并且产生偏振开关所需的反馈强度具有更大的调控范围;强色散效应中未能始终获得偏振开关,会出现两模共存区,并且偏振开关出现的注入电流值较高.同时,观察到的偏振模跳变和多偏振开关现象类似于短波长垂直腔面发射激光器,因而证实这两类激光器在偏振开关的本质规律上是相似的.此外,还对长波长垂直腔面发射激光器不易在低注入电流下获得偏振开关的原因进行了分析,并给出了合理的解释.     

1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with InGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 μm. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does.     

An improved model for computing the reflectivity of a AlAs/GaAs based distributed bragg reflector and vertical cavity surface emitting laser

In this paper, reflectivity of a Distributed Bragg Reflector (DBR) has been computed by considering the effects of changes of wavelength on the changes of the refractive index of the materials of DBR layers. The intrinsic losses of the materials have been included in the computation of the reflectivity of the DBR. It has been found that the effect of change of the wavelength on the refractive index of the DBR materials reduces the Full Width Half Maxima (FWHM) of the stop band significantly which is expected to improve the laser characteristics. If the FWHM is reduced, the thickness of the active layer of a VCSEL can also be reduced which will further reduce the threshold current of the device. It has been found that the intrinsic losses of the materials have a significant effect on the reflectivity of a DBR. It has also been found that peak reflectivity of a 20 pair AlAs/GaAs DBR reduces by 0.2% after including the intrinsic losses (with a value of the intrinsic losses α = 10 cm^?1).     

1.3μm量子点垂直腔面发射激光器高频响应的优化设计

结合垂直腔面发射激光器(VCSEL)原理以及量子点增益特点，计算了有源层p掺杂结构的量子点VCSEL的材料增益和3 dB带宽，发现p掺杂结构可以大大提高频率特性.结合VCSEL激射条件和阈值特性，分析了对VCSEL结构的要求；分析了分布参数对频率特性的影响，对其外部封装提出了要求.设计了高频率响应的含氧化限制层的1.3 μm量子点VCSEL结构. 关键词： 量子点 垂直腔面发射激光器 微分增益 3 dB带宽     

Transverse-mode selectivity in possible nitride vertical-cavity surface-emitting lasers

Excitation of various transverse modes in possible nitride vertical-cavity surface-emitting lasers (VCSELs) is investigated and compared using the effective frequency optical model. In the comparative analysis of laser mode selectivity, two distinctly different configurations of possible nitride VCSELs are considered: the traditional VCSEL design with both (n-side and p-side) ring contacts as well as the uniform-current-injection (UCI) VCSEL design. Our simulation reveals that, during the continuous-wave device operation at room temperature, a multi-mode operation dominated by higher-order transverse modes is typical for traditional nitride VCSEL configurations whereas a desirable single-mode (based on the fundamental LP₀₁ mode) operation turns out to be characteristic for the wide current range in UCI ones. The above different threshold device behaviours are an immediate consequence of essentially different current-spreading phenomena in both VCSEL designs, resulting in completely different not only gain profiles but also temperature distributions within the laser active regions of both VCSELs. Seemingly similar behaviour has been also reported in arsenide VCSELs but it is expected to be much more severe in the case of nitride ones as a result of much higher both electrical resistivities of p-type nitrides and their temperature derivatives of refractive indices.     

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Room-temperature (RT) continuous-wave (CW) performance of modern 1300-nm oxide-confined In(Ga)As/GaAs quantum-dot (QD) vertical-cavity surface-emitting diode lasers (VCSELs) taking advantage of many QD sheets is investigated using our comprehensive self-consistent simulation model to suggest their optimal design. Obviously, quantum dots should be as uniform as possible and as dense as possible to ensure high enough optical gain. Besides, our simulation reveals that efficient and uniform current injection into VCSEL active regions necessary to enhance excitation of the desired fundamental LP₀₁ mode is accomplished in the VCSEL configuration with the broad-area bottom contact and the ring upper one as well as with the oxide aperture localized within the first period of the upper p-type DBR. The doping of the DBR mirrors is chosen as a compromise between their high enough electrical conductivity and low enough free-carrier absorption. The oxide aperture is additionally introducing the radial optical waveguiding. Moreover, our analysis has been concluded that VCSEL active regions should be composed of at least 9 QD sheets to acquire efficient RT CW operation. Furthermore, rather longer optical cavities are recommended in this case because localization of QD sheets should be adjusted to the anti-node positions of the optical cavity standing wave.