Electronic properties of grains and grain boundaries in graphene grown by chemical vapor deposition

We synthesize hexagonal shaped single-crystal graphene, with edges parallel to the zig-zag orientations, by ambient pressure CVD on polycrystalline Cu foils. We measure the electronic properties of such grains as well as of individual graphene grain boundaries, formed when two grains merged during the growth. The grain boundaries are visualized using Raman mapping of the D band intensity, and we show that individual boundaries between coalesced grains impede electrical transport in graphene and induce prominent weak localization, indicative of intervalley scattering in graphene.     

Tunable n‐ and p‐type doping of single‐layer graphene by engineering its interaction with the SiO2 support

We report a technique to tune the excess charge concentration in single‐layer graphene from p‐ to n‐type up to densities of |n | ～ 1.2 × 10¹³ cm^–2, corresponding to a displacement electric field of ～2.5 V/nm. The tuning is achieved by engineering the interaction between graphene and the underlying Si/SiO₂ substrate with an amino group‐terminated self‐assembled monolayer, and subsequent rinsing in aqueous solutions at controlled pH. Raman spectroscopy and electrical measurements on treated graphene devices confirm the occurrence of doping. Interestingly, we found the field‐effect mobility not to be significantly affected by the procedure. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Multiphonon Raman spectroscopy properties and Raman mapping of 2D van der Waals solids: graphene and beyond

Strong in‐plane bonding (covalent) and weak van der Waals (vdW) interplanar interactions characterize a number of layered solids, as epitomized by graphite. The advent of graphene (Gr), individual atomic two‐dimensional (2D) layers, isolated from mineral graphite via micromechanical exfoliation enabled the ability to pick, place and stack of arbitrary compositions. Moreover, this discovery implicated an access to other 2D vdW solids beyond graphene and artificially stacking atomic layers forming heterostructures/superlattices. Raman spectroscopy (RS) is a fast reliable non‐destructive analytical tool and an integral part for lattice dynamical structural characterization of crystalline solids at nanoscale, revealing not only the collective atomic/molecular motions but also localized vibrations/modes and specifically used to determine the number of graphene layers and of other 2D vdW solids. We present Raman spectroscopy in first‐, second‐ and higher‐order vibrational modes involving 3 and 4 phonons (overtones and combination) and mapping of graphene (mono‐, bi‐, tri‐ and few‐) layers, semiconducting transition metal dichalcogenides (TMDs) [molybdenum disulfide (MoS₂) and tungsten disulfide (WS₂)] and wide bandgap hexagonal boron nitride (h‐BN) dispersed monolayers, revealing various molecular vibrations and structural quality/disorder. First‐ and higher‐order phonon modes are observed and analyzed in terms of Raman intensity (spatial inhomogeneity or thickness variation), band position (intrinsic mechanical strain) and intensity ratio (structural disorder) as a function of graphene layer (n). An empirical relation for G band position with n is corroborated. All of the higher order modes are observed to upshift almost linearly with n, betraying the underlying interlayer vdW interactions. These findings exemplify the evolution of structural parameters in layered materials in changing from 3‐ to 2‐ or low‐dimensional regime. The results are presented in view of applications of graphene by itself and in combination that help better understanding of physical and electronic properties for nano‐/optoelectronics. Copyright © 2015 John Wiley & Sons, Ltd.     

Raman imaging on high‐quality graphene grown by hot‐filament chemical vapor deposition

We report the synthesis of high‐quality graphene on Cu foils using hot‐filament chemical vapor deposition technique and demonstrate that by suitably varying the CH₄ and H₂ flow rates, one can also obtain hydrogenated graphene. Micro‐Raman spectroscopy studies confirm the growth of monolayer graphene as inferred from the intensity ratio of 2D to G peak which is nearly four in unhydrogenated samples. Detailed Raman area mapping confirms the uniform coverage of monolayer graphene. The grown layer is also transferred onto a Si substrate over ~10 × 10 mm sq. area. The present results provide a leap in synthesis technology of high‐quality graphene and pave way for scaling up the process. Copyright © 2012 John Wiley & Sons, Ltd.     

Nanocarbon hybrids of graphene‐based materials and ultradispersed diamond: investigating structure and hierarchical defects evolution with electron‐beam irradiation

We report the influence of electron‐beam (E‐beam) irradiation on the structural and physical properties modification of monolayer graphene (Gr), reduced graphene oxide (rGO) and graphene oxide (GO) with ultradispersed diamond (UDD) forming novel hybrid composite ensembles. The films were subjected to a constant energy of 200 keV (40 nA over 100 nm region or electron flux of 3.9 × 10¹⁹ cm⁻²s⁻¹) from a transmission electron microscope gun for 0 (pristine) to 20 min with an interval of 2.5 min continuously – such conditions resemble increased temperature and/or pressure regime, enabling a degree of structural fluidity. To assess the modifications induced by E‐beam, the films were analyzed prior to and post‐irradiation. We focus on the characterization of hierarchical defects evolution using in situ transmission electron microscopy combined with selected area electron diffraction, Raman spectroscopy (RS) and Raman mapping techniques. The experiments showed that the E‐beam irradiation generates microscopic defects (most likely, interstitials and vacancies) in a hierarchical manner much below the amorphization threshold and hybrids stabilized with UDD becomes radiation resilient, elucidated through the intensity, bandwidth, and position variation in prominent RS signatures and mapping, revealing the defects density distribution. The graphene sheet edges start bending, shrinking, and generating gaps (holes) at ~10–12.5 min owing to E‐beam surface sputtering and primary knock‐on damage mechanisms that suffer catastrophic destruction at ~20 min. The microscopic point defects are stabilized by UDD for hybrids in the order of GO > rGO ≥ Gr besides geometric influence, i.e. the int erplay of curvature‐induced (planar vs curved) energy dispersion/absorption effects. Furthermore, an attempt was made to identify the nature of defects (charged vs residual) through inter‐defect distance (i.e. L_D). The trends of L_D for graphene‐based hybrids with E‐beam irradiation implies charged defects described in terms of dangling bonds in contrast to passivated residual or neutral defects. More importantly, they provided a contrasting comparison among variants of graphene and their hybrids with UDD. Copyright © 2015 John Wiley & Sons, Ltd.     

Layer‐by‐layer AuCl3 doping of stacked graphene films

We investigated the effect of layer‐by‐layer AuCl₃ doping on the electrical and optical properties of stacked graphene films. Graphene grown by the chemical‐vapor deposition method on a Cu‐foil was chemically doped by AuCl₃ solution with a concentration of 20 mM. Eight different configurations were prepared and analyzed by using four‐point probe measurements, optical transmittance measurements, scanning electron microscopy, and micro‐Raman spectroscopy to compare the optical and electrical characteristics of the different graphene samples. In our study, the top‐layer doping method was very effective because better performances considering both sheet resistance and optical transmittance were observed from the configurations with the top‐layer doped. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

高质量大面积石墨烯的化学气相沉积制备方法研究

石墨烯因其奇特的能带结构和优异的物理性能而成为近年来大家研究的热点, 但是目前单层石墨烯的质量与尺寸制约了其实际应用的发展. 本文采用常压化学气相沉积(CVD)方法, 基于铜箔衬底, 利用甲烷作为碳源制备了高质量大面积的单层与多层石墨烯. 研究发现: 高温度、稀薄的甲烷浓度、较短的生长时间以及合适的气体流速是制备高质量、大面积石墨烯的关键. Raman光谱, 扫描电子显微镜、透射电子显微镜等表征结果表明: 制备的石墨烯主要为单层, 仅铜箔晶界处有少量多层石墨烯. 电学测试表明CVD制备的石墨烯在低温时呈现出较明显的类半导体特性; 薄膜电阻随外界磁场的增大而减小.     

Tip-Enhanced Raman Spectroscopy and Mapping of Graphene Sheets

Abstract: Single graphene sheets, a few graphene layers, and bulk graphite, obtained via both micromechanical cleavage of highly oriented pyrolytic graphite and carbon vapor deposition methods, were deposited on a thin glass substrate without the use of any chemical treatment. Micro-Raman spectroscopy, tip-enhanced Raman spectroscopy (TERS), and tip-enhanced Raman spectroscopy mapping (TERM) were used for characterization of the graphene layers. In particular, TERM allows for the investigation of individual graphene sheets with high Raman signal enhancement factors and allows for imaging of local defects with nanometer resolution. Enhancement up to 560% of the graphene Raman band intensity was obtained using TERS. TERM (with resolution better than 100 nm) showed an increase in the number of structural defects (D band) on the edges of both graphene and graphite regions.     

The influence of chemical solvents on the properties of CVD graphene

The ultra‐clean and defect‐free transfer of chemical vapor deposition (CVD) graphene is essential for its application in electronic devices. Here, we study the influence of commonly used etching solvents during the transfer process, i.e. ammonium persulfate, ferric chloride, and ferric nitrate, on the properties of CVD graphene by Raman spectroscopy. Obvious blue shift and broadening of Raman G and 2D peaks were observed for graphene transferred by ferric chloride and ferric nitrate, as compared to that transferred by ammonium persulfate. These changes are attributed to p‐doping as well as reduction of phonon lifetime of graphene in the presence of residue iron compounds during the transfer process. The latter would also introduce a great reduction of thermal conductivity of graphene, e.g. with 76% reduction for graphene transferred by ferric nitrate as compared to that transferred by ammonium persulfate. This work would provide valuable information for the transfer of high‐quality CVD graphene. Copyright © 2014 John Wiley & Sons, Ltd.     

Structural evolution in CVD graphene chemically oxidized by sulphuric acid

The role of sulphuric acid (H₂SO₄) in fabrication graphene oxide besides as intercalant has not been well addressed. In this work, Raman spectroscopy is used to monitor structural evolution in chemical vapor deposition (CVD) graphene chemically oxidized by dilute H₂SO₄. From the analysis of Raman spectra of oxidized graphene, we propose that oxidation first initiates at preexisting defects, and vacancy‐like defects are formed. Following is the radial growth of the vacancy, and oxidation pits appear in graphene. This assumption is further confirmed by atomic force microscope measurement. It is also found that with increase of amounts of defects, G peak is blue shift, and this is explained by defect and hole doping effect. Hole doping in graphene is much stronger at hexagon regions near the oxidation pits. This work helps in understanding the role of H₂SO₄ in fabrication graphene oxide as oxidizer as well as helps in obtaining structure information of graphene oxide. Copyright © 2015 John Wiley & Sons, Ltd.     

Facilitative effect of graphene quantum dots in MoS_2 growth process by chemical vapor deposition

The substrate treatment with seeding promoter can promote the two-dimensional material lateral growth in chemical vapor deposition(CVD) process. Herein, graphene quantum dots(GQDs) as a novel seeding promoter were used to obtain uniform large-area MoS_2 monolayer. The obtained monolayer MoS_2 films were confirmed by optical microscope,scanning electron microscope, Raman and photoluminescence spectra. Raman mapping revealed that the MoS_2 monolayer was largely homogeneous.     

The influence of impurity formation on electron inelastic scattering of suspended graphene

This study reports on controlling the formation of nanoimpurities on suspended graphene to investigate the inelastic scattering of electrons using a two‐phonon Raman process. Results were analyzed by transmission electron microscopy (TEM) and scanning Raman spectroscopy in the same region of suspended graphene. The findings revealed that the area with a higher concentration of impurities shown in the TEM image corresponds directly to the area with a lower integrated intensity and a wider full width at half maximum in the Raman mapping of the 2D band and vice versa. The same trend is also apparent in the 2D′ and D + D″ bands. In conclusion, the results are explained by an increase in the electronic scattering rate due to impurities, which affects two‐phonon Raman scattering. Combining the TEM image and Raman mapping image effectively demonstrates how electron behavior is affected by the distribution of impurities in graphene systems. Copyright © 2012 John Wiley & Sons, Ltd.     

Overtone and combination features of G and D peaks in resonance Raman spectroscopy of the C78H26 polycyclic aromatic hydrocarbon

We have studied the Raman spectra of C₇₈H₂₆, a polycyclic aromatic hydrocarbon with D_2h symmetry point group resembling a longitudinally confined graphene ribbon (or a graphene island) with armchair edge. The experimental spectra recorded with several excitation laser lines have been compared with the results from a theoretical analysis of the resonant Raman response based on density functional theory calculations. Compared to previous investigation the spectra show better signal‐to‐noise ratio, which allows determining previously unresolved weak spectroscopic features. We have extended our analysis to the overtone and combination region (i.e. above 2000 cm⁻¹) demonstrating the presence of signals attributable to 2G, G + D, 2D, D_j + D_k and G + acoustic‐like modes. Moreover, we have measured the temperature dependence of the G peak position, which turns out to show a similar behavior with respect to that of graphene/graphite. Copyright © 2015 John Wiley & Sons, Ltd.     

Influence of the buffer layer properties on the intensity of Raman scattering of graphene

Using a model of oscillating dipoles, we simulate the intensity of the G‐band in the Raman signal from structures consisting of graphene, separated by an arbitrary buffer layer from a substrate. It is found that a structure with an optimized buffer layer refractive index and thickness exhibits a Raman signal which is nearly 50 times more intense than that from the same structure with a non‐optimized buffer layer. The theoretical simulations are verified by Raman measurements on structures consisting of a layer of graphene on SiO₂ and Al₂O₃ buffer layers. The optical contrast of the single graphene layer is calculated for an arbitrary buffer layer. It was found that both the Raman intensity and optical contrast can be maximized by varying the buffer layer thickness. Copyright © 2013 John Wiley & Sons, Ltd.     

Raman fingerprint of doping due to metal adsorbates on graphene

The properties of single-layer graphene are strongly affected by metal adsorbates and clusters on graphene. Here, we study the effect of a thin layer of chromium (Cr) and titanium (Ti) metals on chemical vapor deposition (CVD)-grown graphene by using Raman spectroscopy and transport measurements. The Raman spectra and transport measurements show that both Cr and Ti metals affect the structure as well as the electronic properties of the CVD-grown graphene. The shift of peak frequencies, intensities and widths of the Raman bands are analyzed after the deposition of metal films of different thickness on CVD-grown graphene. The shifts in G and 2D peak positions indicate the doping effect of graphene by Cr and Ti metals. While p-type doping was observed for Cr-coated graphene, n-type doping was observed for Ti-coated graphene. The doping effect is also confirmed by measuring the gate voltage dependent resistivity of graphene. We have also found that annealing in Ar atmosphere induces a p-type doping effect on Cr- or Ti-coated CVD-grown graphene.     

Automated detection and characterization of graphene and few‐layer graphite via Raman spectroscopy

Several processes have to be automated in order to use graphene in future industrial applications. One of these is the detection and characterization of graphene and few‐layer graphite (FLG) flakes on a substrate. Raman spectroscopy is an ideal tool for this purpose, as it allows not only the identification of these graphitic materials on arbitrary substrates but also monitoring the quality of flakes within the sample. In this paper, we report how graphene and FLG crystallites can be automatically detected and characterized by monitoring the evolution of Raman bands. We present an algorithm that achieves this purpose and thus has special potential in industrial applications of graphene. Copyright © 2010 John Wiley & Sons, Ltd.     

Enhancement of lattice defect signatures in graphene and ultrathin graphite using tip‐enhanced Raman spectroscopy

Understanding the role of defects in graphene is the key to tailoring the properties of graphene and promoting the development of graphene‐based devices. Defects can affect the electronic properties of a device while also offering a means by which to functionalize the local properties. Using tip‐enhanced Raman spectroscopy (TERS), heightened defect sensitivity was demonstrated on graphene edges, folds, and overlapping regions. Measurements confirm that TERS can provide simultaneous structural and spectral information on a localized scale, hence offering defect characterization on a scale that is not obtainable using conventional Raman spectroscopy. This study observed preferential enhancement of the D band signal on multilayered graphene and ultrathin graphite; in addition, other key defect signatures were also enhanced and detected. We present our findings in relation to theoretical predictions of graphene defect signatures and an analysis of the sensitivity of TERS in measuring two‐dimensional structures. Copyright © 2013 John Wiley & Sons, Ltd.     

Investigation of the interface between polyethylene and functionalized graphene: A computer simulation study

The effect of surface chemical functionalization of a single graphene layer on its thermodynamic work of adhesion (WA) with polyethylene (PE) chains has been investigated using molecular dynamics (MD) simulation. For this purpose, amine (NH₂), carboxyl (COOH), hydroxyl (OH), and methyl (CH₃) functional groups were distributed randomly throughout the graphene surface using a Monte Carlo (MC) algorithm to achieve graphene functionalized structures with minimized potential energies. The MD simulation results showed that the thermodynamic WA between the PE and the functionalized graphene was larger than that between the PE and the pristine graphene. In fact, the electronegativity of functional groups and Van der Waals forces play influential roles in the thermodynamic WA between the PE and the functionalized graphene. In addition, the amount of thermodynamic WA was increased with increasing the functional group surface density, except for the graphene functionalized with the methyl groups. The segmental density of the PE chains near the single sheet surface was determined based on the density profile calculation. The polymer segments exhibited strong ordering and sharp density variations near the PE/graphene interface. The dynamic of chains was quantitatively characterized by calculating mean square displacement (MSD). Furthermore, the influence of functionality on the glass transition temperature (T_g) of the PE at the PE/graphene interface region was investigated. The results showed that the T_g at the PE/graphene interface was much higher than that of the bulk polymer. In fact, the functionalization of the graphene surface seems to considerably enhance the T_g of the polymer due to lowering the chains mobility.     

The interaction of iron and metal‐free meso‐tetra (4‐sulfonatophenyl) porphines with CVD graphene: a comparative Raman spectroscopy study

In this work, a non‐covalent interaction of iron and metal‐free meso‐tetra (4‐sulfonatophenyl) porphines (FeTPPS and TPPS, respectively) with high‐quality single‐layer graphene is studied by Raman spectroscopy. Such a kind of graphene functionalization is promising for a development of novel optoelectronic devices and sensors. Our results show that the central metal atom of porphyrin macrocycle, iron particularly, plays an important role in the integrity of FeTPPS on graphene surface; however, the predicted Raman enhancement is not significant. The interaction of metal‐free TPPS with graphene leads to the deprotonation of TPPS molecules and higher Raman enhancement values. Moreover, initially deprotonated TPPS solutions after the adsorption onto the graphene surface demonstrate the appearance of new Raman bands and significantly enhanced Raman signals. We propose that a strong interaction between deprotonated TPPS and graphene is realized through pyrrole and desulfonated phenyl rings of closely located planar TPPS molecules on the graphene surface. The results show that both the protonation of porphyrin macrocycle and the existence of central metal atom are crucial for a formation of nanocomposites with defined electronic properties. Copyright © 2014 John Wiley & Sons, Ltd.     

Evolution and defect analysis of vertical graphene nanosheets

We report catalyst‐free direct synthesis of vertical graphene nanosheets (VGNs) on SiO₂/Si and quartz substrates using microwave electron cyclotron resonance – plasma enhanced chemical vapor deposition. The evolution of VGNs is studied systematically at different growth stages. Raman analysis as a function of growth time reveals that two different disorder‐induced competing mechanisms contributing to the defect band intensity. The VGNs grown on SiO₂/Si substrates predominantly consists of both vacancy‐like and hopping defects. On the other hand, the VGNs grown on quartz substrates contain mainly boundary‐like defects. X‐ray photoemission spectroscopy studies also corroborate Raman analysis in terms of defect density and vacancy‐like defects for the VGNs grown on SiO₂/Si substrates. Moreover, the grown VGNs exhibit a high optical transmittance from 95% to 78% at 550 nm and the sheet resistance varies from 30 to 2.17 kΩ/sq. depending on growth time. Copyright © 2014 John Wiley & Sons, Ltd.