溶胶-凝胶法制备Li-N双掺p型ZnO薄膜的结构、光学和电学性能

采用溶胶-凝胶法在n型Si(100)衬底上沉积Li-N双掺杂ZnO薄膜,经X射线衍射和扫描电镜图片分析,所制备薄膜具有多晶纤锌矿结构和高的c轴择优取向.室温下霍尔效应测试结果显示Li-N双掺杂ZnO薄膜具有p型导电特性.在Li掺杂量为15.0at%,Li/N（摩尔比）为1∶1,700℃退火等优化条件下得到的最佳电学性能结果是：电阻率为0.34 Ω·cm,霍尔迁移率为16.43 cm²/V·s,载流子浓度为2.79×10¹⁹ cm^{-3关键词： Li-N双掺 p型ZnO薄膜 溶胶-凝胶 性能}     

溶胶-凝胶法制备(Ba0.7Sr0.3)TiO3/LaNiO3异质薄膜及其结构和介电性质研究

采用改进的溶胶-凝胶方法在单晶Si(100)衬底上制备了介电性能优异的(Ba0.7Sr0.3)TiO3/LaNiO3 异质薄膜.实验发现,在750 ℃下、O2气氛中晶化的LaNiO3薄膜的电阻率最小.C-V与I-V特性测量表明(Ba0.7Sr0.3)TiO3薄膜具有优异的介电性能,在频率为50 kHz、零偏压下的相对介电常数εr>300,偏压为6 V时漏电流密度JL<1.2×10-6 A/cm2.     

还原氮化对V2O5薄膜SERS效应的影响

探讨还原氮化后对V2O5薄膜SERS效应的影响。以乙酰丙酮氧钒(C10H14O5V)为V源,采用非水解溶胶-凝胶法制备V2O5凝胶,通过氨气还原氮化V2O5薄膜。利用XRD、FE-SEM、UV-VIS-NIR、RAMAN测试薄膜结构、光学性能及SERS效应。结果表明,氮化后V以氮氧化合物的形式存在,随着氮化温度升高,氮元素逐步替代氧元素。随着氮化温度升高,薄膜上晶粒逐渐增大,成板条状,晶体粒径达25 nm。经600℃还原氮化得到的薄膜的紫外可见近红外区域的吸收率最高,且禁带宽度相对于未氮化时的V2O5薄膜较小。利用R6G作为探针分子研究了薄膜的SERS效应,结果表明氮化温度600℃时薄膜具有显著的拉曼增强效应,且高于未氮化时的V2O5薄膜的拉曼增强效果,在620 cm^-1处拉曼信号峰强度达485 cps.     

La,V共掺杂的Bi_4Ti_3O_(12)铁电薄膜的溶胶-凝胶法制备及性能测试

采用溶胶-凝胶(sol-gel)工艺在Pt/TiO2/SiO2/p-Si(100)衬底上制备出Bi4Ti3O12(BIT)和Bi3.25La0.75Ti2.97V0.03O12(BLTV)铁电薄膜,研究了La,V共掺杂对BIT薄膜的晶体结构和电学性能的影响.BIT薄膜为c轴择优取向,BLTV薄膜为随机取向,拉曼光谱分析表明V掺杂降低了TiO6(或VO6)八面体的对称性,也增强了Ti—O键(或V—O键)杂化.BLTV薄膜的剩余极化Pr为25.4μC/cm2,远大于BIT薄膜的9.2μC/cm2,表现出良好的铁电性能.疲劳、漏电流测试显示BLTV薄膜具有优良的抗疲劳特性和漏电流特性,表明La,V共掺杂能有效地降低薄膜中的氧空位.     

离子束增强沉积VO_2多晶薄膜的温度系数

用改进的离子束增强沉积方法和恰当的退火从V2 O5粉末直接制备了VO2 多晶薄膜 .实验测试表明 ,薄膜的取向单一、相变特性显著、结构致密、界面结合牢固、工艺性能良好 ,薄膜的电阻温度系数 (TCR)最高可达 4 2 3% K .从成膜机理出发 ,较详细地讨论了离子束增强沉积VO2 多晶薄膜的TCR高于VOx 薄膜的TCR的原因 .分析认为 ,单一取向的VO2 结构使薄膜晶粒具有较高的电导激活能 ,致密的薄膜结构减少了氧空位和晶界宽度 ,使离子束增强沉积VO2 多晶薄膜结构比其他方法制备的VOx 薄膜更接近于单晶VO2 是其具有高TCR的原因     

用离子束增强沉积从V2O5粉末制备高热电阻温度系数VO_2薄膜

采用了一种用离子束增强沉积从V2O5粉末直接制备VO2薄膜的新方法,将纯度为997%的V2O5粉末压成溅射靶,在用Ar离子束溅射的同时,用氩氢混合束对沉积膜作高剂量离子注入,使沉积膜中V2O5的V—O键断裂,进而被注入的氢还原,退火后获得热电阻温度系数(TCR)高达4%的VO2薄膜.高剂量的氩氢混合束注入对薄膜引入应力,使薄膜的转换温度降低、电阻温度曲线斜率变大,是薄膜TCR增大的原因 关键词： 离子束增强沉积 VO2薄膜 热电阻温度系数     

氧化法结合快速热处理制备VOx薄膜及其性质研究

采用磁控溅射法在单晶Si〈100〉基底上沉积金属钒(V)薄膜,在高纯氧环境下快速热处理制备具有相变特性的氧化钒(VOx)薄膜.利用X射线衍射仪、X射线光电子能谱和扫描电子显微镜对薄膜结晶结构、薄膜中V的价态与组分及表面微观形貌进行分析,应用四探针测试方法和太赫兹时域频谱技术对样品的电学和光学特性进行测试.结果表明:在一定范围的快速热处理保温温度和保温时间下,都可以制备出具有热致相变特性的氧化钒薄膜,相变前后薄膜的方块电阻变化超过两个数量级,薄膜成分主要由V2O5和VO2混合组成,薄膜中V整体价态不因热处理条件改变而不同.在快速热处理条件范围内,500℃ 25 s左右条件下(中温区)制备出的氧化钒薄膜相变特性最佳,并且对THz波有一定的调制作用.     

薄膜光学 其他

O4842006054451关于退火温度对VO2薄膜制备及其电学性质影响的研究=Preparation and electrical properties of VO2thin fil msaffected by annealed temperature[刊,中]/王静(四川大学物理系,辐射物理教育部重点实验室.四川,成都(610064)),何捷…//四川大学学报(自然科学版).—2006,43(2).—365-370采用真空蒸发-真空退火工艺由V2O5粉末制备VO2薄膜,研究了退火温度对薄膜的影响。经XRD、XPS及电阻-温度测试发现,随退火温度的升高,VO2薄膜先后经历了单斜晶系VO2(B)型→单斜晶系VO2(A)型→四方晶系VO2的变化,在3种类型的薄膜中V均…     

(111)取向生长Pb(Zr0:95Ti0:05)O3纳米晶薄膜的铁电与热释电特性

" 在Pt/Ti/SiO2/Si基片上用溶胶-凝胶法与快速退火工艺制备了300 nm厚的锆钛酸铅Pb(Zr0:95Ti0:05)O3 (PZT95/5)反铁电薄膜．结果显示600~700 ℃晶化处理的钙钛矿PZT95/5薄膜具有高度(111)取向生长特性．薄膜的电性能测量采用金属-铁电-金属电容器结构．在20 V电压作用下,600~700 ℃晶化处理的PZT95/5薄膜显示出饱和电滞回线．在1 kHz下,600、650和700 ℃晶化的薄膜介电常数与损耗分别为519与0.028、677与0.029、987     

烘烤温度对溶胶-凝胶法制备镧掺杂钛酸铋薄膜结构与铁电性质的影响

采用溶胶-凝胶法，在保持薄膜结晶温度和有机物分解温度相同情况下，发现烘烤温度（即溶剂的挥发温度）对镧掺杂钛酸铋薄膜的晶体结构、表面形貌和铁电性质均产生重要影响.在较低烘烤温度下得到的薄膜（117）择优取向明显.但随着烘烤温度增加，薄膜的（117）择优取向逐渐减弱.薄膜的表面晶粒形貌则从棒状逐渐转变为盘状.还测量了薄膜的铁电性质，发现在250℃烘烤温度下得到的薄膜具有最大的剩余极化强度，2Pr为28.4μC/cm2.对实验现象进行了定性解释. 关键词： 溶胶-凝胶法 烘烤温度 铁电薄膜     

波长1315nm的石英窗口增透膜

 用Ta₂O₅/SiO₂膜系镀制了石英窗口增透膜。并在优化膜系,改进膜厚控制后,使得1315nm波长单面剩余反射率降到0.05%。     

CdTe多晶薄膜沉积制备及其性能

在氩气和氧气混合气氛下，近空间升华法制备了CdTe多晶薄膜。薄膜的结构、性质决定于整个沉积过程。深入研究沉积过程中的热交换、物质输运，有助于获得结构致密具有良好光电性质的CdTe薄膜。分析了近空问沉积的物理机制，测量了近空间沉积装置内的温度分布，讨论了升温过程、气压与薄膜的初期成核的关系。结果表明，不同气压下制备的样品，均有立方相CdTe。此外，还有CdS和SnO2：F衍射峰。CdTe晶粒随气压增加有减小趋势；随气压的增加，透过率呈下降趋势，相应的CdTe吸收边向短波方向移动。采用衬底温度500℃，源温度620℃，在120℃的温差下，沉积时间4min上制备CdTe多晶薄膜，获得转换效率优良的结构为SnO2：F／CdS／CdTe／Au的集成电池。     

波长1 31 5nm的石英窗口增透膜

用Ta     

Characterization by X-ray diffraction and electron microscopy of GaInAs and GaAsN single layers and quantum wells grown on GaAs

Experiments were performed on thick GaInAs and GaAsN layers and on GaInAs quantum wells grown on (1 1 1)B and (0 0 1) GaAs substrates. The aim of this work is to develop an experimental procedure in order to evaluate the chemical compositions and relaxation state of the samples at global as well as nanometre scale. Chemical analyses (EDS, RBS, etc.), X-ray diffraction (reciprocal space map, sin²ψ, etc.) and XTEM were carried out.The validity of the sin²ψ method on the above mentioned thin layers has been tested. Good accuracy is obtained for In and N composition but more work has to be done in order to optimize the determination of the relaxation state. Coupling TEM observations to these calculations gives valuable information on the relaxation mechanisms (misfit dislocations, stacking faults, microtwins, etc.).     

Optical and electrical characterizations of nanoparticle Cu2S thin films

Copper sulfide thin films are deposited onto different substrates at room temperature using the thermal evaporation technique. X-ray diffraction spectra show that the film has an orthorhombicchalcocite （7-Cu2S） phase. The atomic force microscopy images indicate that the film exhibits nanoparticles with an average size of nearly 44 nm. Specrtophotometric measurements for the transmittance and reflectance are carried out at normal incidence in a spectral wavelength range of 450 nm-2500 nm. The refractive index, n, as well as the absorption index, k is calculated. Some dispersion parameters are determined. The analyses of el and e2 reveal several absorption peaks. The analysis of the spectral behavior of the absorption coefficient, c~, in the absorption region reveals direct and indirect allowed transitions. The dark electrical resistivity is studied as a function of film thickness and temperature. Tellier＇s model is adopted for determining the mean free path and bulk resistance.     

Experiments and analysis of thin tungsten slice and W/Cu brazing for primary collimator scraper in CSNS/RCS

According to the requirements for the beam collimation system of the rapid cycling synchrotron(RCS)of China Spallation Neutron Source(CSNS),the main structure of a scraper of primary collimator is made by W/Cu brazing,in which the thickness of tungsten slice is 0.17 mm.In order to get the best mechanical properties,the brazing temperature is suggested to be controlled under the recrystallization temperature of tungsten,while the recrystallization temperature is affected directly by the thickness of tungsten.Because of little research and application on the brazing of thin tungsten slice of 0.17 mm and copper,tensile tests are done to get the mechanical properties of tungsten slices which experience different brazing temperatures.In keeping the inner relationships between the mechanical properties and temperature,another experiment is done by using SEM to scan the microstructures including the size and distribution of crystals.Finally we determine the recrystallization temperature of tungsten slice of 0.17 mm,and get the best parameters of W/Cu brazing for scrapers of primary collimator in CSNS/RCS.     

MNA/PMMA有机薄膜光波导

研究出MNA/PMMA有机薄膜光波导。用棱镜耦合器进行了波导参数的测量,发现薄膜呈现各向异性,有较大的双折射。     

Unusual crystal structure of non-superconducting Y1Ba2Cu3O7−x films on buffered silicon substrates

Superconducting common c-axis oriented YBCO films as well as non-superconducting films epitaxially grown at significantly reduced substrate temperatures were deposited by laser ablation on CeO₂/YSZ buffered silicon substrates. The crystal structure of the non-superconducting films measured by XRD is collapsed from the original orthorhombic one, whereas the chemical composition detected using RBS and EDX remains identical. Especially the oxygen content in the non-superconducting material is as high as in the common 90 K superconductor. Thus, the change in the electrical behaviour is only due to a structural modification. The crystallographic model of a simple cubic YBCO perovskite unit cell does not represent completely our experimental results measured on the non-superconducting YBCO. A modified model based on detailed TEM and XRD measurements and known crystal defects of orthorhombic YBCO is proposed.     

小角x射线散射确定TiNi薄膜中晶化粒子的长大激活能

用小角x射线散射技术研究以直流磁控溅射方法制备TiNi合金薄膜其退火生成的晶化粒子的长大行为.发现在室温下溅射的TiNi合金薄膜存在小于1nm尺寸的微空洞,将退火后薄膜的小角x射线散射强度扣除退火前微空洞产生的小角x射线散射强度,用这种方法得到的散射强度遵从Porod定律;而用通常方法扣除背底得到的散射强度结果不满足Porod定律.TiNi合金薄膜在733—793K之间退火晶化粒子的长大激活能Eg=301kJmol. 关键词： TiNi薄膜 晶化粒子 长大激活能     

Photoacoustic study of a two-layer system: Implanted silicon

Summary We have studied the behaviour of photoacoustic response of implanted silicon samples in order to measure the thermal conductivity of damaged layers; the results allow us to determine such a parameter simply by the phase difference measurement between implanted and unimplanted regions of the sample.

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Riassunto è stata studiata la risposta fotoacustica di campioni di silicio impiantato allo scopo di misurare la conducibilità termica degli strati danneggiati; i risultati permettono di determinare questa grandezza misurando semplicemente la differenza di fase tra la zona impiantata e quella cristallina del campione.

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Резюме Исследуется поведение фотоакустического отклика на образцах имплантированного кремиия, чтобы измерить теплопроводность поврежденных слоев. Полученные результаты позволяют получить величину теплопроводности с помощью измерения разности фаз между имплантированной и неимплантированной областлми образца.