有机分子PTCDA在P型Si单晶(100)晶面的生长机理

对PTCDA的分子结构及其化学键的形成进行了分析，并讨论了晶面指数（100）Si单晶的晶格结构。在此基础上，评述了PTCDA分子在P-Si单晶（100）晶面上生长的机理，并制备了样品PTCDA/P-Si（100）。利用XRD对样品测试得出，在P-Si（100）晶面上沉积的PTCDA薄膜中仅存在α物相。利用XPS对样品测试得出，在其界面层中PTCDA酸酐中的4个羟基O原子与C原子结合，其结合能为532.4 eV；苝核基团外围的8个C、H原子以共价键结合，其结合能为289.0 eV；在界面处，悬挂键上的Si原子与PTCDA酸酐中的C、O原子结合，形成C-Si-O键及C-Si键，构成了界面层的稳定结构。     

Alq3/ITO结构的表面和界面电子状态的XPS研究

用传统的真空蒸镀法制备了Alq3/ITO样品,并用X光电子能谱（XPS）研究了Alq3/ITO紧密接触的表面和界面电子化学状态。对Alq3/ITO样品的表面分析表明,在Alq3分子中,Al原子的束缚能（Eb)为70．7eV和75．1eV,分别对应于Al(0)和Al(Ⅲ）态;C原子的束缚能为285．8eV、286．3eV和286．8eV,分别对应于C－C、C－O和C－N键;N原子的主峰位于401．0eV,对应于C－N＝C键;而O原子主要与H原子成键,其束缚能为532．8eV。为了研究Alq3/ITO的界面电子状态,我们用氩离子束对样品表面进行了溅射剥蚀,当溅射时间分别为30,35,45分种时进行XPS采谱分析。结果表明,随着氩离子束溅射时间增长,Al2p、Cls、Nls、Ols、In3d5/2和Sn3d5/2峰都向低束缚能方向有微小移动,且Al2p、Cls和Nls峰变弱,这是受ITO中扩散进入Alq3层的O、In和Sn原子的影响所致。     

苝四甲酸二酐的真空升华提纯及其光谱测试与分析

纯度为9.75%的有机半导体材料苝四甲酸二酐(PTCDA),在其升华点进行了真空升华提纯,其纯度可达99.9%。利用质谱、红外光谱及X光电子能谱对这种高纯材料进行了测试并详细分析了其分子结构、化学键的形成、原子在晶格平衡位置的振动模式、电子的组态和原子的结合能的变化。由红外光谱分析得出,苝四甲酸二酐的分子结构是中央5个C构所组成的苝核基团及位于苝核两端的两个酸酐组成,它们主要以共价键结合。晶格上的C原子在其平衡位置主要以伸缩振动为主。其分子中有大量可以自由移动的π电子;分子间离域大π键的交叠决定了苝四甲酸二酐的导电性能。由XPS谱分析得出,高纯度的苝四甲酸二酐中有结合能不同的两种C原子,结合能分别为:285.3和288.7eV。它们对应于苝环及酸酐上的C原子。另外,有两种类型的O原子,即CO和C—O—C,其结合能分别为531.3和533.1eV。     

ITO/Rubrene表面及界面的AFM和XPS研究

采用原子力显微镜（AFM）和X射线光电子能谱仪（XPS）研究了氧化铟锡（ITO）/红荧烯（Rubrene）的形貌和表面、界面的电子态。AFM结果显示,ITO上的Rubrene膜有良好的均匀性。XPS结果表明:C1s谱有3个峰,位于282.50,284.70,289.30 eV,对应于C-Si、C O和C-C键。用氩离子束溅射表面,芳香碳对应的峰值逐渐增大,其他两个峰值迅速消失。随着表面O污染的去除,O1s峰先快速减弱然后逐渐增强。界面附近的O原子与C原子结合构成O C、C-O-C和醛基。In3d和Sn3d峰则缓慢增强,在界面附近峰值变得稳定。C1s、In3d、Sn3d谱峰都向低束缚能发生化学位移,表明ITO与Rubrene在界面发生了相互作用,形成一个互扩散层。     

PTCDA/P-Si光电探测器欧姆接触层的XPS测试分析

在光电探测器PTCDA/P-Si芯片的有机层表面,成功制作出了比接触电阻为4.5×10-5Ω·cm2的低阻欧姆接触层。利用X射线光电子能谱(XPS)对Al/Ni/ITO的欧姆接触层界面的电子状态进行了测试和分析。结果表明,ITO中的In3d及Sn3d各出现两个分裂能级的谱峰,它们是In和Sn原子处于氧化环境的结合能。Ni2p有两个谱峰Ni2p(1)及Ni2p(2),低结合能位置Ni2p(1)对应于Ni原子被X射线激发产生的谱峰,说明NiITO之间没有发生化学反应,Ni层阻止了Al层被氧化成Al2O3;高结合能Ni2p(2)谱峰说明已形成了Al3Ni冶金相,有利于低阻欧姆接触层的形成。     

利用同步辐射光电子能谱技术测量ZnO/PbTe异质结的能带带阶

异质结结构界面的能带带阶是一个非常重要的参数,该参数的精确确定直接影响异质结的光电性质研究以及异质结在光电器件上的应用.利用同步辐射光电子能谱技术测量了ZnO/PbTe异质结结构的能带带阶.测量得到该异质结价带带阶为2.56 eV,导带带阶为0.49 eV,是一个典型的类型I的能带排列.利用变厚度扫描的测量方法发现,ZnO/PbTe界面存在两种键,分别是Pb—O键(低结合能)和Pb—Te键(高结合能).在ZnO/PbTe异质结界面的能带排列中导带带阶较小,而价带带阶较大,这一能带结构有利于PbTe中的激发电子输运到ZnO导电层中.该类结构在新型太阳电池、中红外探测器、激光器等器件中具有潜在的应用价值.     

ITO/Rubrene表面及界面的AFM和XPS研究

采用原子力显微镜(AFM)和X射线光电子能谱仪(XPS)研究了氧化铟锡(ITO)/红荧烯(Rubrene)的形貌和表面、界面的电子态。AFM结果显示,ITO上的Rubrene膜有良好的均匀性。XPS结果表明:C1s谱有3个峰,位于282.50,284.70,289.30 eV,对应于C—Si、CO和C—C键。用氩离子束溅射表面,芳香碳对应的峰值逐渐增大,其他两个峰值迅速消失。随着表面O污染的去除,O1s峰先快速减弱然后逐渐增强。界面附近的O原子与C原子结合构成OC、C—O—C和醛基。In3d和Sn3d峰则缓慢增强,在界面附近峰值变得稳定。C1s、In3d、Sn3d谱峰都向低束缚能发生化学位移,表明ITO与Rubrene在界面发生了相互作用,形成一个互扩散层。     

茶树叶与根表面的XPS表征

利用X射线光电子能谱(XPS)研究了茶树叶与根的表面化学组成与结构.结果表明,茶树表面主要由C,O,N和Al等四种元素组成,在茶树叶远轴面还有少量的P和F.通过查阅标准图谱数据库、参照木材表面XPS分析结果,对茶树表面测得的Cls结合能采用曲线拟合与分峰,得到三种形态:结合能为285eV的是C1,来自C-C或C-H,代表角质、蜡质等脂类化合物;C2的结合能在286.35 eV(近轴面)和286.61 eV(远轴面),是能够与氧形成单键的C-O,主要源于表面的纤维素;C3的结合能为288.04 eV(近轴面)和288.09 eV(远轴面),为C-O基团标志,综合N(1s)的结合能(399～401 eV)和O(1s)的分峰情况,为蛋白质的酰基标志.茶树根表面除含有与叶表面相同的C1(结合能285 eV)、C2(结合能286.49 eV)和C3(结合能288.78 eV)所代表的角质、蜡质、纤维素和蛋白质之外,还出现了结合能为283.32 eV的C5.由于其结合能低于C1,推测为茶树根表面的有机金属形态.茶树叶和根表面没有木材表面具有的羧基CA,说明根系分泌的有机酸游离存在于根表面.对茶树表面O(1s)图谱的拟合结果与C(1s)结果相吻合.计算不同C和O态所占的比例得知,茶树叶面远轴面含氧基团多于近轴面,呈较高的氧化状态,因此远轴面化学性质较活泼;与叶相比,茶树根的角质和蜡质含量显著降低,含氧基团相对增多,因此化学性质较活泼,适于水分子和其他溶质分子通过.由于蛋白质含量为根表面>远轴面>近轴面,表明根表面的湿润度高于叶表面,而远轴面湿润度高于近轴面.存在于茶树表面Al的结合能均大于单质铝72.7 eV,在73.50 eV以上,为Al2O3形态,这将增大茶树表面的吸附作用.由于根表面Al2O3含量高于叶面,显示根具有更强的吸附能力.     

基于给体/受体有机太阳电池性能的研究

以酞菁铜(CuPc)、对北艹四甲酸二酐(PTCDA)和富勒烯(C60)作为光敏材料分别制备了3个有机太阳电池器件:器件1为ITO/PEDOT(3,4-乙撑二氧噻吩)/CuPc/Al;器件2为ITO/PEDOT/CuPc/PTCDA/Al;器件3为ITO/PEDOT/CuPc/C60/Al.研究发现器件2、3的短路电流和开路电压比1的提高了很多,主要是因为2、3是给体/受体异质结构,它不仅增大了器件的吸收光谱并提供了一个激子解离的有效位置.器件2和3相比,3的短路电流和开路电压比2的提高了1倍多,这主要是因为C60的激子扩散长度比PTCDA的要长,激子解离的几率比激子复合的几率大得多,因此3的性能比2的有了很大的提高.     

苝四甲酸二酐薄膜电子结构的同步辐射共振光电子能谱研究

利用基于同步辐射的近边X射线吸收精细结构谱(NEXAFS)和共振光电子谱(RPES)研究了苝四甲酸二酐分子(PTCDA)薄膜的电子结构.碳K边NEXAFS谱中能量小于290 eV的四个峰对应于PTCDA分子不同化学环境碳原子1s电子到未占据分子轨道的共振跃迁.RPES谱中观察到共振光电子发射和共振俄歇电子发射导致的共振峰结构,以及二次谐波激发的碳1s信号.根据电子动能对入射光能量的依赖性分别对三类峰结构进行了归属.同时,发现PTCDA分子轨道共振光电子峰的强度具有光子能量依赖性.这种能量选择性共振增强效应是由于PTCDA分子轨道空间分布差异导致的.共振俄歇峰主要源于高结合能(4.1 eV)分子轨道能级电子参与的退激发过程.明确RPES实验谱图中各个峰结构的起源有助于准确利用基于RPES的芯能级空穴时钟谱技术定量估算有机分子/电极异质界面处电子从分子未占据轨道到电极导带的超快转移时间.     

CuPc/ITO结构的表面和界面电子态的XPS研究

覆盖有Indium tin oxide(ITO)膜的透明导电玻璃广泛地用作有机发光器件 (OLEDs)的空穴注入电极 ,但是ITO膜的功函数通常与空穴传输材料的最高被占据分子轨道 (HOMO)不匹配。铜酞菁 (CuPc)作为缓冲层可以提高空穴从ITO向空穴传输材料的注入效率。对CuPc ITO样品的XPS表面分析表明 ,在CuPc分子中 ,铜原子显 2价 ,通过配位键和氮原子相互作用。CuPc分子中有两类碳原子 :8个C原子与 2个N原子成键 ;其余 2 4个C原子具有芳香烃性质。N原子也处在两种化学环境中 :有 4个N原子只与 2个C原子形成CNC键 ;另外 4个N原子不仅与 2个C原子成键 ,还通过配位键与Cu原子成键。用氩离子束对样品表面进行了溅射剥蚀 ,当溅射时间分别为 2 ,5 ,10min时进行XPS采谱分析 ,结果表明 ,随着氩离子束溅射时间增长 ,C 1s,N 1s峰变弱 ,Cu 2p ,O 1s,In 3d,Sn 3d峰增强 ,C 1s,N 1s,O 1s,In 3d和Sn 3d峰都向高束缚能或低束缚能方向移动 ,但它们的情况却不相同。     

紫外辐射加速老化高温硫化硅橡胶的X射线光电子能谱研究

高温硫化硅橡胶具有优良的电气性能、机械性能、憎水性而广泛应用于特高压输电线路,但亦会受外界环境的影响而老化,其抗紫外老化性能受到关注。课题组模拟户外紫外辐射环境,设计搭建了可调式紫外辐射加速老化试验箱,对A、B两个厂家的高温硫化硅橡胶样品进行了紫外辐射(0,500和1 000 h)加速老化实验,重点对辐射前后的试样进行X射线光电子能谱全谱扫描和窄区谱分析、确定元素化学位移及相对含量,分析紫外辐射对高温硫化硅橡胶表面化学态的影响,进而判断紫外辐射加速高温硫化硅橡胶老化机制。结果表明：高温硫化硅橡胶主要元素为O_1S,C_1S,Si_2p,其中O_1S主要以O-Si-O（532.4 eV）的形式存在,紫外辐射后,拟合分峰观察到534 eV的-OH的小峰,积分面积随辐照时间延长而增加;C_1S为C-H,C-C（284.8 eV）或C-O（286.3 eV）,随着辐射时间的延长,C-H和C-C结合能峰积分面积减小,C-O结合能峰的积分面积略微增加;Si_2p为Si-C（102.39 eV）,紫外辐射后新增SiO_x（x=3～4）结合能峰（103.6 eV）且积分面积随辐射时间延长而增加。分析认为紫外辐射加速老化的机理是紫外线切断硅橡胶中键能较低的部分Si-C,C-C和C-H键,裂解后的自由基可相互结合发生交联反应形成SiO_x（x=3～4）;辐射产生高活性的臭氧氧化自由基生成-COOH。XPS技术能够探究高温硫化硅橡胶的表面化学态从而促进其老化机理的研究。     

高纯度3,4,9,10 Perylenetetracarboxylic Dianhydride-PTCDA的元素分析及核磁共振谱和X射线衍射谱的测试与分析

采用真空升华的方法,对国产纯度为98%的苝四甲酸二酐(简称PTCDA)粉末,在其升华点450℃进行了提纯。应用朗伯比尔定律及紫外-可见光分光光度计测试分析,其纯度可达99.8%;利用元素分析仪,对提纯前、后分子中的C元素和H元素含量进行了对比测定,结果表明提纯后的PTCDA分子中C和H含量十分接近理论值;采用核磁共振(NMR)谱,研究了分子中H元素的归属得出,处于两种不同化学环境中的H原子数目相等并且它位于芳环上,其分子中存在酸酐;对PTCDA分子的化学键的形成讨论后得出,高纯度PTCDA分子中的C,H,O原子主要以共价键结合;使用X射线衍射(XRD)仪,测试分析了这种有机材料的结晶状态及其晶体结构指出,提纯后的PTCDA多晶粉末存在α-PTCDA及β-PTCDA两种物相,主要成份为α-PTCDA,而β-PTCDA约占总成份的五分之一。其晶胞属于平面单斜晶系底心点阵结构。同时详细研究了在其升华点沉积在P型单晶Si(100)表面,由此形成薄膜的晶体状态及其晶粒度的尺寸和能带结构。高纯度α-PTCDA分子在P—Si单晶表面形成有机层单晶薄膜时,在其薄膜的分子层平面的上、下及其两侧,将由π电子云所覆盖。由于C,H和O原子最外层价电子轨道的交叠形成离域大π键,从而产生价电子的共有化运动,使其能级分裂为能带。它的价带与第一紧束缚带的能量差为2.2eV,使这种有机材料具有半导体导电的性质,本征载流子浓度为1014 cm-3,属于弱p型有机半导体材料;它与P—Si的交界面可形成同型异质结,对可见光至近红外波段的光有很好地响应。     

Si 2p and O 1s photoemission from oxidized Si(0 0 1) surfaces depending on translational kinetic energy of incident O2 molecules

The influence of translational kinetic energy of incident O₂ molecules for the passive oxidation of the partially oxidized Si(0 0 1) surface has been studied by photoemission spectroscopy. The incident energy of O₂ molecules was controlled up to 3 eV by a supersonic molecular beam technique. Two incident energy thresholds (1.0 and 2.6 eV) were found out in accordance with the first-principle calculations. Si 2p and O 1s photoemission spectra measured at representative incident energies showed the incident energy induced oxidation at the backbonds of the dimer and the second layer (subsurface) Si atoms. Moreover, the difference of oxygen chemical bonds was found out to be as the low and the high binding energy components in the O 1s photoemission spectra. They were assigned to bridge sites oxygen and dangling bond sites oxygen, respectively.     

Maleated wood-fiber/high-density-polyethylene composites: Coupling mechanisms and interfacial characterization

Chemical coupling of maleated polyethylene (MAPE) copolymers at the interface in wood-fiber/high-density-polyethylene (HDPE) composites was investigated in this study. FTIR and ESCA analyses presented the evidence of a chemical bridge between the wood fiber and polymeric matrix through esterification. The feature peak of esterification occurred in the range between 1800 and 1650 cm^?1 at FTIR spectra. Succinic and half succinic esters were the two primary covalent bonding products to cross-link the wood fiber and thermoplastic matrix. Maleated composites had a remarkable shift on most O1s and C1s spectra in respect to the wood, HDPE, and untreated composites. The binding energy of maleated composites at C1s and O1s spectra was around 282 eV and 530 eV, respectively. The mass concentration of chemical components at the interface was related to the coupling agent type, structure, and concentration. According to the FTIR and ESCA analyses, the coupling mechanisms of MAPEs were proposed. The interfacial morphology in wood-fiber/HDPE composites was illustrated with the pinwheel models based on SEM observations.     

Growth and characterization of thin PTCDA films on 3C-SiC(0 0 1)c(2 × 2)

The growth of thin 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) films on a 3C-SiC(0 0 1)c(2 × 2) substrate has been studied by means of photoelectron spectroscopy (PES) and atomic force microscopy (AFM). In the first monolayer the molecules interact with the substrate mainly through the O atoms in the end groups of the molecule. The O atoms have a higher binding energy in the first molecular layer compared to the following layers. No chemical shifts are observed in the Si 2p spectra or in the C 1s spectra from the perylene core of the molecules. From the VB spectra and LEED pattern we conclude that the substrate remains in the c(2 × 2) reconstruction after PTCDA deposition. For thicker films a Stranski-Krastanov film growth was observed with flat lying molecules relative to the substrate.     

Chemical reaction of sputtered Cu film with PI modified by low energy reactive atomic beam

Polyimide (PMDA-ODA) surface was irradiated by low energy reactive atomic beam with energy 160-180 eV to enhance the adhesion with metal Cu film. O₂⁺ and N₂⁺ ions were irradiated at the fluence from 5 × 10¹⁵ to 1 × 10¹⁸ cm⁻². Wetting angle 78° of distilled deionized (DI) water for bare PI was greatly reduced down to 2-4° after critical ion flounce, and the surface energy was increased from 37 to 81.2 erg/cm. From the analysis of O 1s core-level XPS spectra, such improvement seemed to result from the increment of hydrophilic carbonyl oxygen content on modified PI surface. To see more carefully correlation of the peel strength with interfacial reaction between Cu and PI, flexible copper clad laminate with Cu (9 μm)/Cu (200 nm) on modified PI substrate (25 μm) was fabricated by successive sputtering and electroplating. Firstly, peel strength was measured by using t-test and it was largely increased from 0.2 to 0.5 kgf/cm for Ar⁺ only irradiated PI to 0.72-0.8 kgf/cm for O₂⁺ or N₂O⁺ irradiated PI. Chemical reaction at the interface was reasoned by analyzing C 1s, O 1s, N 1s, and Cu 2p core-level X-ray photoelectron spectroscopy over the as-cleaved Cu-side and PI side surface through depth profiling. From the C 1s spectra of cleaved Cu-side, by the electron transfer from Cu to carbonyl oxygen, carbonyl carbon atom became less positive and as a result shifted to lower binding energy not reaching the binding energy of C₂ and C₃. The binding energy shift of the peak C₄ as small as 1.7 eV indicates that carbonyl oxygen atoms were not completely broken. From the analysis of the O 1s spectra, it was found that new peak at 530.5 eV (O₃) was occurred and the increased area of the peak O₃ was almost the same with reduced area of the peak carbonyl oxygen peak O₁. Since there was no change in the relative intensity of ether oxygen (O₂) to carbonyl oxygen (O₁), and thus O₃ was believed to result from Cu oxide formation via a local bonding of Cu with carbonyl oxygen atoms. Moreover, from X-ray induced Auger emission spectra Cu LMM which was very sensitive to chemical bonding, Cu oxide or CuOC complex formation instead of CuNO complex was clearly identified by the observation of the peak at 570 eV at higher 2 eV than that of metal Cu. In conclusion, when Cu atoms were sputtered on modified PI by low energy ion beam irradiation, it can be suggested that two Cu atoms locally reacted with carbonyl oxygen in PMDA units and formed Cu⁺O⁻C complex linkage without being broken from carbon atoms and thus the chemically bound Cu was in the form of Cu₂O.