Growth and electronic properties of ultra-thin Ag films on Ni(1 1 1)

We studied the growth mode and electronic properties of ultra-thin silver films deposited on Ni(1 1 1) surface by means of scanning tunnelling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES). The formation of the 4d-quantum well states (QWS) was analysed within the phase accumulation model (PAM). The electronic structure of the 1 ML film is consistent with the silver layer which very weakly interacts with the supporting surface. The line-shape analysis of Ag-4d_xz,yz QWS spectrum support the notion of strong localization of these states within the silver layer. The asymmetry of the photoemission peaks implies that the decay of the photo-hole appears to be influenced by the dynamics of the electrons in the supporting surface.     

Bulk vs. surface effects in ARPES experiment from La2/3Sr1/3MnO3 thin films

Experiments directly probing the electronic states using angle-resolved photoemission (ARPES) were carried out on La_2/3Sr_1/3MnO₃ in order to elucidate its electronic properties. ARPES is a surface sensitive technique where bulk and surface states are usually both present. We present high-resolution ARPES studies in the (1 0 0) and (1 1 0) mirror planes and compare them with simulated ARPES based on GGA + U band structure calculations. In the (1 1 0) mirror plane we identify surface umklapps accounted by surface reconstruction which couple to bulk electronic states. As predicted by the simulated spectra there is additional spectral intensity at the Fermi level detected in ARPES data due to k_⊥-broadening effects in the photoemission final states. We demonstrate that this additional spectral intensity is a convenient spectral marker for determination of the k_F Fermi momenta.     

Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> and Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> Topological Insulators

The effect of an ultrathin Pb film deposited on the surface of Bi₂Se₃ and Sb₂Te₃ compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.     

Oxidation of the porous silicon surface under the action of a pulsed ionic beam: XPS and XANES studies

The changes in the electronic structure and phase composition of porous silicon under action of pulsed ionic beams have been studied by X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy (XANES) using synchrotron radiation. The Si 2p and O 1s core photoemission spectra for different photoelectron collection angles, valence band photoemission spectra, and X-ray absorption near-edge fine structure spectrain the region of Si L _2,3 edges of the initial and irradiated samples have been analyzed. It has been found that, as a result of the irradiation, a thin oxide film consisting predominantly of higher oxide SiO₂ is formed on the porous silicon surface, which increases the energy gap of the silicon oxide. Such film exhibits passivation properties preventing the degradation of the composition and properties of porous silicon in contact with the environment.     

Angle-resolved photoemission spectroscopy of perovskite-type transition-metal oxides and their analyses using tight-binding band structure

Nowadays it has become feasible to perform angle-resolved photoemission spectroscopy (ARPES) measurements of transition-metal oxides with three-dimensional perovskite structures owing to the availability of high-quality single crystals of bulk and epitaxial thin films. In this article, we review recent experimental results and interpretation of ARPES data using empirical tight-binding band-structure calculations. Results are presented for SrVO₃ (SVO) bulk single crystals and La_{1? x} Sr _x FeO₃ (LSFO) and La_{1? x} Sr _x MnO₃ (LSMO) thin films. In the case of SVO, from comparison of the experimental results with calculated surface electronic structure, we concluded that the obtained band dispersions reflect the bulk electronic structure. The experimental band structures of LSFO and LSMO were analyzed assuming the G-type antiferromagnetic state and the ferromagnetic state, respectively. We also demonstrated that the intrinsic uncertainty of the electron momentum perpendicular to the crystal surface is important for the interpretation of the APRES results of three-dimensional materials.     

A theoretical study of the electronic structure of Pd(111) clean surface

A detailed investigation of the electronic structure of Pd(l 11) clean surface is presented in terms of a LCAO band model. Results including surface bands and local densities of states are given and a comparison with recently performed photoemission experiments is presented. For hω = 21.2 eV we find that the angle resolved distribution curves can be explained in terms of initial state density and k_∥ conserving transitions. For lower photon energies a mixture of bulk transition calculations and surface density of states seems more appropriate. Comparison with previous theoretical work is also presented.     

Observation of p- and d-like surface states on CuCl(100) by angle-resolved photoemission

In the course of a systematic ultraviolet photoemission study of the electronic band structure of CuCl, we have identified two occupied surface states on CuCl(100), situated at 0.25 and 3.0 eV below valence band maximum in normal emission spectra. They essentially show pure p- and d-like orbital symmetry, respectively. We interpret them as a chlorine p_x,y-like occupied antibonding resonance and a copper Γ₁₂-derived state split off from the bulk orbitals by the surface potential. We also present critical point energies along Γ-X and Γ-L.     

Unoccupied electronic states of epitaxial iron layers on Cu(100)

Inverse photoemission spectra were taken for thin epitaxial iron films on Cu(100). For a film thickness of eight monolayers the observed electronic states are characteristic for a fcc(100) surface. Thed-bands of iron show a ferromagnetic exchange splitting of 1.1 eV, considerably smaller than the bulk value of 1.8 eV, which we observe for film thicknesses above 18 monolayers.     

Electronic structure reconstruction of CaFe2As2 in the spin density wave state

The electronic structure of CaFe₂As₂, a parent compound of iron-based superconductors, is studied with high-resolution angle-resolved photoemission spectroscopy. The electronic structure of CaFe₂As₂ in the paramagnetic state is consistent with that of density-functional theory calculations. We show that the electronic structure of this compound is significantly reconstructed when entering the spin density wave state. We could resolve two hole-like pockets and four electron-like pockets around the (0, 0) point, and one electron-like pocket surrounded with a pair of electron- and hole-like pockets around the (π, π) point in the spin density wave state. Therefore, the complicated Fermi surface topology and electronic structure near Fermi surface of CaFe₂As₂ illustrate that there exists unconventional electronic reconstruction in the spin density wave state, which cannot be explained by the band folding and Fermi surface nesting pictures.     

Development of electronic structure of Ni thin films on Cu(0 0 1) surfaces

We have traced the development of the Ni electronic structure with thickness variation on flat and nano-structured Cu(0 0 1) surfaces by means of photoemission spectroscopy. The binding energy of the Ni 2p_3/2 main peak and satellite peak is found to have shifted monotonically in the direction opposite to each other, with the increase of Ni coverage. The reduced binding energy of the thin film’s main peak is strongly correlated to the Cu 4s/Ni 3d interfacial hybridization effect (s/d IHE) and the narrowing of the d band with the reduction of dimensions, while the increased satellite binding energy results from the combination of interface hybridization and expansion of an extended 4s-like state towards the vacuum. The center of the Ni d_xy band is predicted to shift closer to the Fermi level with increasing film thickness. Enhanced satellite intensity in thin films is observed, correlating to the narrowing of the d band with decreased film thickness. Through comparison of Ni films grown on flat versus nano-structured Cu(0 0 1) surfaces, the mixing of Cu and Ni atoms is found to be enhanced at the terrace edge region and consequently a larger s/d IHE is predicted for Ni on the nano-structured surface.     

Direct photoemission spectroscopy and electronic properties of in situ grown,strained high-Tc and related oxide films

We have optimized laser ablation thin film deposition and transfer procedures within synchrotron vault, specifically to perform angle-integrated and angle-resolved photoemission spectroscopy (ARPES) on high-T_c and related films without cleaving the samples. However, the chain-containing phases like YBCO-123 easily loose surface oxygen and do not exhibit stable Fermi edge, hence are not suitable for ARPES studies. Direct in situ ARPES studies on strained LSCO-214 films show striking strain effects on the electronic structure. The Fermi surface (FS) of LSCO evolves with doping, yet changes even more significantly with strain. The strain changes the FS topology from hole-like to electron-like, and causes band dispersion along k_x and the Fermi level crossing before the Brillouin zone boundary, in sharp contrast to the ‘usual’ flat band remaining ≈30 meV below E_F measured on unstrained samples. The associated reduction of the density of states does not diminish the superconductivity; T_c is enhanced in all our strained samples. Implications for the evolving high-T_c theory and studies of nano-engineered film heterostructures are briefly discussed.     

甲醇/TiO2(110)界面激发态的表征

用光电子能谱的方法研究了甲醇/TiO₂(110)界面的电子结构．在激发波长为400 nm的双光子光电子能谱(2PPE)中,探测到了一个末态能量在费米能级以上5.5 eV的共振信号．之前的研究[Chem. Sci. 1, 575 (2010)]表明,这个共振信号与甲醇在5配位的钛离子(Ti_5c)上的光催化解离相关．双光子光电子能谱同时携带初态和中间态的信息．为此设计了一个调谐激发光波长的2PPE实验以及一个单光子光电子能谱(1PPE)和2PPE对比的实验,结果一致表明这个共振信号来自于未占据的中间态,也就是激发态．能带色散关系测量表明这个激发态是局域的．时间分辨2PPE测得这个激发态的寿命是24 fs．     

Influence of the herringbone reconstruction on the surface electronic structure of Au(111)

We present angular-resolved photoemission investigations of the Shockley-type surface state on the reconstructed (111) surface of gold. The so-called herringbone reconstruction, with three different 22×3^1/2domain orientations, forms a super-lattice that has a clearly observable influence on the surface electronic structure. In the L gap of the projected bulk states, there appears a non-uniform photoemission intensity distribution due to the back-folding of the Shockley state at the Bragg planes of the reduced surface Brillouin zone. Furthermore, there is a clear indication of the existence of surface-state band gaps in the electronic density of states of the Shockley state. PACS 73.20.At; 68.35.Bs; 79.60.Bm     

Correlation of conductivity and angle integrated valence band photoemission characteristics in single crystal iron perovskites for 300 K < T < 800 K: Comparison of surface and bulk sensitive methods

A single crystal monolith of La_0.9Sr_0.1FeO₃ and thin pulsed laser deposited film of La_0.8Sr_0.2Fe_0.8Ni_0.2O₃ were subject to angle integrated valence band photoemission spectroscopy in ultra high vacuum and conductivity experiments in ambient air at temperatures from 300 K to 800 K. Except for several sputtering and annealing cycles, the specimens were not prepared in situ. Peculiar changes in the temperature dependent, bulk representative conductivity profile as a result of reversible phase transitions, and irreversible chemical changes are semi-quantitatively reflected by the intensity variation in the more surface representative valence band spectra near the Fermi energy. X-ray photoelectron diffraction images reflect the symmetry as expected from bulk iron perovskites. The correlation of spectral details in the valence band photoemission spectra (VB PES) and details of the conductivity during temperature variation suggest that valuable information on electronic structure and transport properties of complex materials may be obtained without in situ preparation.     

Mass-selected Ag<Subscript>3</Subscript> clusters soft-landed onto MgO/Mo(100): femtosecond photoemission and first-principles simulations

The electronic structure of supported mass-selected Ag₃ clusters is analyzed by joint femtosecond photoemission spectroscopy and ab initio theoretical investigations. A wide band gap insulating magnesia ultra-thin film on Mo(100) has been chosen as substrate in order to minimize the electronic interaction between metal clusters and support. After magnesia ultra-thin film preparation no photoemission from the molybdenum substrate is observed anymore, instead very weak two photon photoemission is detected possibly originating from surface or subsurface oxide defect states. Soft-landing deposition of 2 of atomic monolayer equivalents of Ag₃ clusters results in the disappearance also of the MgO two photon photoemission signal, while a strong single photon photoemission signal is detected from states located directly below the Fermi level. The theoretical study of structural, electronic and optical properties of Ag₃ at two model sites of MgO (100), the stoichiometric MgO(100) and an F_S-center defect, based on the DFT method and the embedded cluster model provides insight into the interactions between the cluster and the support which are responsible for the characteristic spectroscopic features.     

Ab Initio Study of the Polarization,Electronic, Magnetic,and Optical Properties of Perovskite SrMO<Subscript>3</Subscript> (M = Fe,Mn) Crystals and Thin Films Containing Magnetic Ions

The magnetic, electronic, and polarization properties of the SrFeO₃ and SrMnO₃ compounds with a perovskite structure are calculated using the density functional theory in the bulk and thin-film states. A ferroelectric instability is found to be absent in the bulk state, and the polar mode is softened in the thin-film state of SrMnO₃ in the presence of tensile stresses in the substrate. As a result, a polar phase with a polarization of 23 μC/cm² appears, which agrees with experimental data. The study of the magnetic and electronic properties demonstrates the existence of G-type antiferromagnetic ordering in SrMnO₃ and the appearance of a dielectric gap of about 1.5 eV in its thin film. A ferromagnetic phase with metallic conduction in both the bulk and thin-film states is detected in SrFeO₃.     

Correct application of Fresnel’s equations for intensity analysis of angle-resolved photoemission data

The electromagnetic field relevant for the excitation process in angle-resolved photoemission is studied. We show that Fresnel’s equations together with the known bulk dielectric constants can be used to calculate the complex vector potential at the metal surface. A model is developed which accounts correctly for the special experimental geometry with focused light. It is used to calculate the variation of photoemission intensity with changing light incidence angle and polarization. Experimental data for the photoemission intensity as a function of light incidence angle are presented for direct transitions out of bulk, surface and adsorbate states at a Cu(1 1 0) surface. The comparison to our model shows that the application of copper bulk optical constants is justified even when electronic states are localized to the topmost atomic layer.     

Angle-resolved photoemission spectroscopy study of the (101) surface of the Kondo insulator CeNiSn

The electronic structure of CeNiSn, which is considered a possible topological Kondo insulator, has been investigated by employing synchrotron radiation excited angle-resolved photoemission spectroscopy (ARPES). We have found that the easy cleavage plane in CeNiSn is (101), for which we have investigated the Fermi surface (FS) and band structures. The measured FS and ARPES for the (101) plane are described well by the calculated FS and band structures, obtained from the DFT calculations. The measured ARPES bands and photon energy map show that the metallic states crossing the Fermi level have the 3D nature, casting a negative suspicion for the existence of the topological surface states of the 2D character in CeNiSn. The Ce 4f Kondo resonance peak is observed in Ce 4d → 4f resonant photoemission spectroscopy, suggesting the importance of the Ce 4f electrons in determining the temperature-dependent topological electronic structure of CeNiSn.     

Electrical transport and magnetic properties of perovskite-type electron-doped La–Pr–Mn–O epitaxial films

La_1−xPr_xMnO₃ (LPrMO) thin films have been epitaxially grown on (1 0 0)SrTiO₃ single-crystal substrates by pulsed-laser deposition. The films have a perovskite structure and give rise to the colossal magnetoresistance effect with the maximum magnetoresistance ratio of 10³% (at 240 K and 5 T). The electrical transport and magnetic properties have been investigated for the La_0.8Pr_0.2MnO₃ film with thickness 3000 Å. The results indicate that the films have quite a distinctive magnetotransport behavior compared to the bulk. The analysis of X-ray photoemission spectroscopy suggests that the valence state of Pr is 4+ in LPrMO film. Therefore, the epitaxial film is most likely an electron-doped colossal magnetoresistance system.