二氧化硅及其硅烷自组装膜微观摩擦力与粘着力的研究(Ⅱ)粘着力的实验与分析

使用原子力/摩擦力显微镜,在5%—99%相对湿度范围,研究了二氧化硅和二氧化硅基体上十八烷基三甲氧基硅烷自组装膜(简称OTE SAM/SiO₂)表面粘着力随湿度的变化规律.实验表明,二氧化硅表面的粘着力随湿度的增大先逐渐增大,然后急剧减小.相反,OTE SAM/SiO₂由于其良好的斥水性,表面的粘着力随湿度的增大基本不变.着重从基本界面力,即表面张力、范德瓦耳斯力和基本键合力的形成与变化,分析了二氧化硅表面粘着力随湿度的增大先增后减的原因,探讨了粘着力的产生机理 关键词： 固体表面的物理性能 分子膜 纳米摩擦学     

MoS2/SiO2界面黏附性能的尺寸和温度效应

探索二维材料与其衬底之间的黏附性能对于二维材料的制备、转移以及器件性能的优化至关重要.本文基于原子键弛豫理论和连续介质力学方法,系统研究了尺寸和温度对MoS₂/SiO₂界面黏附性能的影响.结果表明,由于表面效应引起的热膨胀系数、晶格应变和杨氏模量的变化, MoS₂/SiO₂界面黏附能随MoS₂厚度的减小而增大,而热应变使MoS₂/SiO₂界面黏附能随温度的升高而逐渐降低.此外,预测了在不同尺寸和温度下MoS₂在SiO₂衬底上的“脱落”条件,系统阐述了MoS₂与SiO₂衬底之间黏附性能的物理机制,为基于二维材料电子器件的优化设计提供了理论基础.     

同步辐射光激励的二氧化硅薄膜刻蚀研究

利用热氧化法在硅晶片上生长SiO₂薄膜，结合光刻和磁控溅射技术在SiO₂薄膜表面制备接触型钴掩模，通过掩模方法在硅表面开展了同步辐射光激励的表面刻蚀研究，在室温下制备了SiO₂薄膜的刻蚀图样.实验结果表明：在同步辐射光照射下，通入SF₆气体可以有效地对SiO₂薄膜进行各向异性刻蚀，并在一定的气压范围内，刻蚀率随SF₆气体浓度的增加而增加，随样品温度的下降而升高；如果在同步辐射光照射下，用SF₆和O₂的混合气体作为反应气体，刻蚀过程将停止在SiO₂/Si界面，即不对硅刻蚀，实现了同步辐射对硅和二氧化硅两种材料的选择性刻蚀；另外，钴表现出强的抗刻蚀能力，是一种理想的同步辐射光掩模材料. 关键词： 同步辐射刻蚀 接触型钴掩模 二氧化硅薄膜     

快速响应恢复的PI-SiO2/NiI2比色湿度传感器

有机-无机杂化型比色湿度传感器可通过电学信号和颜色变化获取环境湿度,并因其特征颜色区分度高、稳定性好、制备工艺简单等优点,在湿度监测领域具有广阔的应用前景,但其通常响应恢复时间长,从而不利于湿度实时监测.本文在聚酰亚胺(PI)-碘化镍(NiI₂)有机无机杂化材料中掺杂纳米SiO₂微球制备得到PI-SiO₂/NiI₂复合薄膜及比色湿度传感器,对其表面形貌和湿敏特性进行了研究.结果显示, PI-SiO₂/NiI₂薄膜具有蜂巢状的表面形貌,传感器的特征颜色显著,湿度响应时间小于1.5 s,恢复时间小于18 s.研究表明,纳米SiO₂微球掺杂能够较为显著地改善有机-无机杂化型比色湿度传感器的响应恢复特性,这对于传感器性能的提升具有一定参考意义.     

SiO2固态电解质中的质子特性对氧化物双电层薄膜晶体管性能的影响

本文采用等离子体增强化学气相沉积技术(PECVD)在室温条件下制备了具有双电层效应的二氧化硅(SiO₂) 固体电解质薄膜, 并以此SiO₂薄膜作为栅介质制备了氧化铟锌(IZO)双电层薄膜晶体管. 本文系统地研究了SiO₂固体电解质中的质子特性对双电层薄膜晶体管性能的影响, 研究结果表明, 经过纯水浸泡的SiO₂固体电解质薄膜可以诱导出较多的可迁移质子, 因此表现出较大的双电层电容. 由于SiO₂固体电解质薄膜具有质子迁移特性, 晶体管的转移特性曲线呈现出逆时针方向的洄滞现象, 并且这一洄滞效应随着栅极电压扫描速率的增加而增大. 进一步对薄膜晶体管的偏压稳定性进行测试, 发现晶体管的阈值电压的变化遵循了拉升指数函数(stretched exponential function)关系.     

Au/SiO2纳米复合薄膜的微结构及光吸收特性研究

用多靶磁控溅射技术制备了Au/SiO₂纳米多层薄膜.利用透射电子显微镜以及吸 收光谱对Au/SiO₂复合薄膜的微观结构、表面形貌及光学性能进行了表征和测试 .研究结果表明：单层Au/SiO₂薄膜中Au沉积时间小于10s时，分散在SiO_{2< /sub>中的Au颗粒随Au的沉积时间的延长而增大；当沉积时间超过10s后，Au颗粒的尺寸几乎 不随沉积时间变化，但Au颗粒的形状由网络状结构变为薄膜状结构.［Au(t1关键词： 尺寸效应 纳米复合薄膜 吸收光谱 有效媒质理论}     

硅衬底的SrTiO3淀积膜的湿敏特性与机理研究

对无定形多孔SrTiO₃膜电导率随相对湿度的变化进行了理论模型分析.该模型也适用于其他多孔半导体陶瓷材料.实验样品用氩离子束镀膜技术在SiO₂/Si衬底上淀积SrTiO₃膜并制成平面型电阻结构.结果表明，在室温下，当相对湿度从12%变化至53%时，电流缓慢下降；而当相对湿度从53%变化至92%时，电流又显著上升，即在高湿度条件下具有良好的湿敏特性.电流及其在高湿条件下的上升率随测试频率而增大.吸附响应时间明显长于脱附时间. 关键词：     

控制氧化层对双势垒纳米硅浮栅存储结构性能的影响

在等离子体增强化学气相沉积(PECVD)系统中,利用逐层淀积非晶硅(a-Si)和等离子体氧化相结合的方法制备二氧化硅(SiO₂)介质层.电容电压(C-V)和电导电压(G-V)测量结果表明：利用该方法在低温(250 ℃)条件下制备的SiO₂介质层均匀致密,其固定氧化物电荷和界面态密度分别为9×10¹¹cm^-2和2×10¹¹cm^-2·eV^-1,击穿场强达4.6 MV/cm,与热氧化形成的SiO₂介质层的性质相当.将该SiO₂介质层作为控制氧化层应用在双势垒纳米硅(nc-Si)浮栅存储结构中,通过调节控制氧化层的厚度,有效阻止栅电极与nc-Si之间的电荷交换,延长存储时间,使存储性能得到明显改善. 关键词： 等离子体氧化 二氧化硅 纳米硅 控制氧化层     

Mn(SiO2)3(M=Fe,Co,Ni;n=1-3)团簇的几何结构、光电性质及磁性

基于密度泛函理论中的广义梯度近似系统研究M_n(SiO₂)₃(M=Fe,Co,Ni;n=1-3)团簇的几何结构、光电性质和磁学性质.结果表明:Fe,Co原子相对于Ni原子更易于在(SiO₂)₃团簇上聚集;通过分析团簇的分裂途径及其产物,发现稳定性较好的氧化硅是一种很好的用于负载过渡金属"岛膜"的载体材料;M_n(SiO₂)₃团簇的能隙恰好位于近红外光谱范围内.通过磁性分析发现,该复合团簇的磁矩主要局域在过渡金属原子周围,而且,Fe₂(SiO₂)₃和Co₃(SiO₂)₃具有相对较大的磁矩,这主要源于过渡金属原子的d轨道间相互耦合.能隙和磁性两方面性质进一步肯定了二氧化硅磁性复合材料在医学界被用作光动力靶向治疗的可观前景.     

反应溅射VN/SiO2纳米多层膜的微结构与力学性能

采用V和SiO₂靶通过反应溅射方法制备了一系列具有不同SiO₂和VN调制层厚的VN/SiO₂纳米多层膜. 利用X射线衍射、X射线能量色散谱、高分辨电子显微镜和微力学探针表征了多层膜的微结构和力学性能. 结果表明：在Ar，N₂混和气体中，射频反应溅射的SiO₂薄膜不会渗氮. 单层膜时以非晶态存在的SiO₂，当其厚度小于1nm时，在多层膜中因VN晶体层的模板效应被强制晶化，并与VN层形成共格外延生长. 相应地，多层膜的硬度得到明显提高，最高硬度达34GPa. 随SiO₂层厚度的进一步增加，SiO₂层逐渐转变为非晶态，破坏了与VN层的共格外延生长结构，多层膜硬度也随之降低. VN调制层的改变对多层膜的生长结构和力学性能也有影响，但并不明显. 关键词： 2纳米多层膜')" href="#">VN/SiO₂纳米多层膜 共格外延生长 非晶晶化 超硬效应     

Substrate effects on the oxygen gas sensing properties of SnO2/TiO2 thin films

In this study, SnO₂/TiO₂ thin films are fabricated on SiO₂/Si and Corning glass 1737 substrates using a R.F. magnetron sputtering process. The gas sensing properties of these films under an oxygen atmosphere with and without UV irradiation are carefully examined. The surface structure, morphology, optical transmission characteristics, and chemical compositions of the films are analyzed by atomic force microscopy, scanning electron microscopy and PL spectrometry. It is found that the oxygen sensitivity of the films deposited on Corning glass 1737 substrates is significantly lower than that of the films grown on SiO₂/Si substrates. Therefore, the results suggest that SiO₂/Si is an appropriate substrate material for oxygen gas sensors fabricated using thin SnO₂/TiO₂ films.     

Synthesis of bismuth nanocap arrays on quartz substrates and their surface plasmon resonance properties

Bismuth nanocap arrays have been prepared by vacuum depositing Bi films onto the surfaces of self-assembled monolayer arrays of SiO₂ nanoparticles. The surface morphologies, structures, and optical properties of the obtained samples have been characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscope (AFM), X-ray diffraction (XRD), and ultraviolet–visible–near infrared (UV–vis–NIR) spectrophotometer. TEM and AFM images indicated that the SiO₂/Bi composite nanoparticles were incompletely encapsulated and their surfaces were relatively rough. UV–vis–NIR absorption spectra showed that Bi nanocap arrays had strong and tunable surface plasmon resonance peaks in the visible and near infrared regions, which were dependent dramatically on the relative ratio of the SiO₂ core diameter to the Bi cap thickness.     

Structure and frictional properties of Langmuir-Blodgett films of Cu nanoparticles modified by dialkyldithiophosphate

Langmuir-Blodgett (LB) films of dialkyldithiophosphate (DDP) modified Cu nanoparticles were prepared. The structure, microfrictional behaviors and adhesion of the LB films were investigated by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and atomic/friction force microscopy (AFM/FFM). Our results showed that the modified Cu nanoparticles have a typical core-shell structure and fine film-forming ability. The images of AFM/FFM showed that LB films of modified Cu nanoparticles were composed of many nanoparticles arranged closely and orderly and the nanoparticles had favorable behaviors of lower friction. The friction loop of the films indicated that the friction force was affected prominently by the surface slope of the Cu nanoparticles and the microfrictional behaviors showed obvious “ratchet effect”. The adhesion experiment showed that the modified Cu nanoparticle had a very small adhesive force.     

Characterization and tribological investigation of SiO2 and La2O3 sol–gel films

Thin films of SiO₂ and La₂O₃ were prepared on a glass substrate by a dip-coating process from specially formulated sols. The tribological properties of the resulting thin films sliding against a Si₃N₄ ball were evaluated on a one-way reciprocating friction and wear tester. The morphologies of the unworn and worn surfaces of the films were examined by an atomic force microscope (AFM) and a scanning electron microscope (SEM). La₂O₃ shows the best tribological performance. The coefficient of friction is about 0.1 and the wear life is over 5000 sliding passes both under higher (3 N) and lower load (1 N). The SiO₂ film derived from a specially formulated aqueous solution shows much better performance in resisting wear and reducing friction than the one derived from an ethanol solution. The wear mechanisms of the films are discussed based on SEM observation of the worn surface morphologies. SEM observation of the morphologies of worn surfaces indicates that the worn surface of La₂O₃ is too slight to be observed by SEM. The wear of SiO₂ derived from TEOS solution is the characteristic of delaminating, which is responsible for the abrupt failure of the film. The wear of SiO₂ derived from aqueous solution is the characteristic of fracture. Brittle fracture and severe abrasion dominate the wear of glass substrate.     

Silane effects on the surface morphology and abrasion resistance of transparent SiO2/UV-curable resin nano-composites

Transparent ultraviolet curable nano-composite coatings consisting of nano-sized SiO₂ and acrylate resin have been developed to improve the abrasion resistance of organic polymers. The nano-sized SiO₂ particles were surface-modified using various amounts of 3-methacryloxypropyltrimethoxysilane. The 3-methacryloxypropyltrimethoxysilane concentration effects on the surface morphology and abrasion resistance of the transparent SiO₂/ultraviolet-curable resin nano-composites were investigated using scanning electron microscopy, atomic force microscopy, and ultraviolet-visible spectrophotometer. The results showed that as the 3-methacryloxypropyltrimethoxysilane/SiO₂ weight ratio increased from 0.2 to 0.6, the dispersion, compatibility and cross-linking density between the 3-methacryloxypropyltrimethoxysilane-modified SiO₂ particles and acrylate resin were improved, leading to an increase in abrasion resistance. However, as the 3-methacryloxypropyltrimethoxysilane/SiO₂ weight ratio was increased to 1.5, the additional 3-methacryloxypropyltrimethoxysilane may exceed that needed to fill the pores with the probability of SiO₂ nano-particles existing on the coating surface was lower than that for samples with a 3-methacryloxypropyltrimethoxysilane/SiO₂ weight ratio of 0.6. This produced a decrease in abrasion resistance.     

Atomic force microscopy investigation of surface roughness generated between SiO2 micro-pits in CHF3/Ar plasma

The present paper investigates the surface roughness generated by reactive ion etching (RIE) on the location between silicon dioxide (SiO₂) micro-pits structures. The micro-pit pattern on polymethyl methacrylate (PMMA) mask was created by an electron beam lithography tool. By using PMMA as a polymer resist mask layer for pattern transfer in RIE process, the carbon (C) content in etching process is increased, which leads to decrease of F/C ratio and causes domination of polymerization reactions. This leads to high surface roughness via self-organized nanostructure features generated on SiO₂ surface which was analyzed using atomic force microscopy (AFM) technique. The etching chemistry of CHF₃ plasma on PMMA masking layer and SiO₂ is analyzed to explain the polymerization. The surface root-mean-square (RMS) roughness below 1 nm was achieved by decreasing the RF power to 150 W and process pressure lower than 10 mTorr.     

Effect of sputtering pressure on structural and optical properties of silver oxide thin films; Kramers–Kronig method

Silver oxide nano layers were prepared by RF magnetron sputtering on amorphous SiO₂ substrates. O₂ pressure in chamber was varied from 1 to 4 and 7 mTorr during growth process. The effects of different O₂ pressure on structural, morphological and optical properties of the films were investigated by means of X-ray diffraction, scanning electron microscopy, atomic force microscopy and UV–Vis spectroscopy analyses. Optical reflectance measured in the wavelength of 350–950 nm by spectroscopy. Other optical properties and optical band gaps were calculated using Kramers–Kronig relations. The X-ray diffraction measurements showed change in crystalline structure with increasing O₂ pressure. Preferred orientation has been changed to another growth orientation at 4 mTorr O₂ pressure. The Atomic force microscope images showed increasing in roughness consistently by increasing oxygen pressure. The thickness of the thin films decreases (from 217 to 180 nm) with increasing O₂ pressure. Optical results revealed that the highest optical band gap of 3.1 eV and the highest transmittance of?~?80% were achieved at lower O₂ pressure (1 mTorr).     

Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO<Subscript>2</Subscript>/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies

Ultrathin SiO₂ layers for potential applications in nano-scale electronic and photovoltaic devises were prepared by exposure to thermalized atomic oxygen under UHV conditions. Wet-chemical substrate pretreatment, layer deposition and annealing processes were applied to improve the electronic Si/SiO₂ interface properties. This favourable effect of optimized wet-chemical pre-treatment can be preserved during the subsequent oxidation. The corresponding atomic-scale analysis of the electronic interface states after substrate pre-treatment and the subsequent silicon oxide layer formation is performed by field-modulated surface photovoltage (SPV), atomic force microscopy (AFM) and spectroscopic ellipsometry in the ultraviolet and visible region (UV-VIS-SE).     

Surface properties of silicon oxide films deposited using low-pressure dielectric barrier discharge

The deposition of SiO_X films from low-pressure dielectric barrier discharge plasmas has been investigated using tetraethoxysilane (TEOS)/O₂ as the feed gas. Films were analyzed using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), AFM-based nanoindentation/nanowear techniques, and conductive AFM. Film deposition rates and hydrocarbon incorporation in the SiO_X film decrease with addition of O₂. High-quality SiO_X films with extremely low surface roughness are deposited at high oxidant concertrations. Addition of oxidant to the feed gas leads to a change in the SiO_X film structure from precursor-like to a dense SiO_X structure. The SiO_X films deposited with TEOS/O₂ plasmas were found to have soft surface layers, 0.5-1.5 nm thick, which contribute to an improvement of their field emission properties. The effect of gas phase compositions on the surface properties of the conductive surface layer was discussed.