一维光子晶体光谱控制实验研究

光子晶体的禁带特性为伪装材料的光谱控制研究提供了一条新的技术途径。利用传输矩阵的方法建立了一维光子晶体光谱透射、反射的理论模型,针对伪装材料近红外高反射、中远红外低发射的要求,优选Ag,MgF2和ZnS等材料作为光子晶体的薄膜材料,采用真空蒸发镀膜的方法制备出Ag/MgF2,Ag/MgF2/ZnS 4种不同周期结构的一维光子晶体,并实验研究了一维光子晶体的光谱反射和透过特性。结果表明:材料和周期结构对一维光子晶体光谱特性有不同的影响,通过优化设计可以实现在伪装波段内的光谱特性要求。     

光子晶体理论应用于光纤布拉格光栅的研究

将光纤布拉格光栅近似为一维光子晶体，研究光栅的能带结构和光学传输特性。利用平面波展开法对光子晶体进行理论研究，将研究方法移植到光纤布拉格光栅上，并对其进行数值分析，得到光栅的传输特性。研究表明，光栅反射谱有多个反射峰，峰值中心频率是基频的整数倍，而且峰值处存在光子带隙，反射峰带宽对应光子带隙宽度，中心频率和带宽随光栅长度、高介电常量材料占空比、调制深度而变化。结果与传统的耦合模理论一致。     

一维光子晶体色散特性的研究

应用传输矩阵法研究一维光子晶体的色散特性,数值模拟得到了一维光子晶体横电(TE)模、横磁(TM)模的色散特性,研究结果为一维光子晶体器件的设计提供了理论依据.     

含负折射率材料的一维光子晶体的光学传输特性

采用光学传输矩阵方法,模拟研究了由正折射率材料和负折射率材料交替组成的一维光子晶体的光学传输特性.计算了这种含负折射率材料的一维光子晶体的透射谱和色散关系.结果表明,在正入射时,含负折射率材料的光子晶体的带隙要比传统的光子晶体要大得多,并具有狭窄的透射带,从光学薄膜理论的色散关系出发解释了形成上述现象的原因.讨论了在不同的偏振模式下,光以中心波长入射时,反射率随着入射角度的变化关系.发现含负折射率材料的一维光子晶体具有更好的角度特性,可以用来实现对中心波长的全方位反射.     

一维光子晶体的透射谱特性

利用传输矩阵法研究了一维光子晶体的透射谱特性,数值模拟得到了可见光波段一维光子晶体中的透射谱特性,计算结果表明可见光波段入射波长变化时,透射谱禁带宽度发生变化。研究结果为可见光波段一维光子晶体器件的设计提供了理论依据。     

量子阱结构一维光子晶体的能带特性研究

通过构造量子阱结构一维光子晶体,利用光学传输矩阵法对这种光子晶体进行了数值模拟计算,对其光子能带特性进行了分析。计算结果表明,这种量子阱结构光子晶体能有效地拓宽光子能带带隙。适当调整参数获得了多通道滤波特性,并用量子理论对多通道滤波进行了解释。     

光子晶体理论应用于取样光纤光栅的研究

将取样光纤光栅近似为引入多个有规律的大尺寸缺陷的一维二元光子晶体,运用光子晶体传输矩阵理论分析了其长度L、周期LA、折射率调制量δneff和采样率p等参量对其反射谱的影响规律,并将所得结果与用取样光纤光栅传输矩阵法计算所得结果进行了比较,得出了用光子晶体理论分析与用传统的模耦合理论分析相吻合的特性。在分析取样光纤光栅的其它性质以及将其应用于实际时都可借鉴此理论,以达到工程实际应用的最佳效果。     

光在一维光子晶体中的全反射贯穿效应

为了研究一维光子晶体中光波的全反射贯穿效应,利用传输矩阵法计算了TE波和TM波在大于全反射角入射一维光子晶体的透射率.在透射波中发现了全反射贯穿效应,得出了全反射贯穿效应随入射角的变化规律、全反射贯穿效应的波长特性以及全反射贯穿效应随介质光学厚度的变化规律.利用波的量子理论和渐逝波的理论对一维光子晶体的全反射贯穿效应作出了理论解释.     

光在一维光子晶体中的全反射贯穿效应

为了研究一维光子晶体中光波的全反射贯穿效应,利用传输矩阵法计算了TE波和TM波在大于全反射角入射一维光子晶体的透射率.在透射波中发现了全反射贯穿效应,得出了全反射贯穿效应随入射角的变化规律、全反射贯穿效应的波长特性以及全反射贯穿效应随介质光学厚度的变化规律.利用波的量子理论和渐逝波的理论对一维光子晶体的全反射贯穿效应作...     

一维光子晶体禁带特性的研究

应用传输矩阵法研究了一维光子晶体的禁带特性,数值模拟得到了一维光子晶体TE模、TM模和TE/TM模禁带结构,计算结果表明,介质层的厚度发生变化时,禁带宽度发生变化。研究结果为一维光子晶体器件的设计提供了理论依据。     

Silicon and porous silicon mid-infrared photonic crystals

A 3D silicon micromachining method based on proton beam writing combined with electrochemical anodization of p-type silicon enables fabrication of mid-infrared photonic crystals made of silicon and porous silicon. Here, example structures of silicon 1D and 2D photonic crystals are demonstrated. Progress and problems of fabricating 3D photonic crystals made of silicon are discussed. The strategy of fabricating photonic crystals purely made of porous silicon, and the characterization method of all these mid-infrared structures, are discussed. Due to the flexibility of this fabrication method, photonic devices and integrated photonic circuits may be built on a single chip, for which two 2D silicon photonic crystals with one on top of the other are demonstrated.     

Modeling of the optical properties of porous silicon photonic crystals in the visible spectral range

Optical devices based on photonic crystals are of great interest because they can be efficiently used in laser physics and biosensing. Photonic crystals allow one to control the propagation of electromagnetic waves and to change the emission characteristics of luminophores embedded into photonic structures. One of the most interesting materials for developing one-dimensional photonic crystals is porous silicon. However, an important problem in application of this material is the control of the refractive index of layers by changing their porosity, as well as the refractive index dispersion. In addition, it is important to have the possibility of modeling the optical properties of structures to choose precisely select the fabrication parameters and produce one-dimensional photonic crystals with prescribed properties. In order to solve these problems, we used a mathematical model based on the transfer matrix method, using the Bruggeman model, and on the dispersion of silicon refractive index. We fabricated microcavities by electrochemical etching of silicon, with parameters determined by the proposed model, and measured their reflection spectra. The calculated results showed good agreement with experimental data. The model proposed allowed us to achieve a microcavity Q-factor of 160 in the visible region.     

Ferroelectric photonic crystals based on nanostructured lead zirconate titanate

The first results obtained in the synthesis of one-dimensional ferroelectric photonic crystals based on nanostructured lead zirconate titanate and porous silicon are reported. The samples synthesized are studied using linear reflection and second optical harmonic spectroscopy.     

Microfabrication of freestanding porous silicon particles containing spectral barcodes

A method to microfabricate micron‐scale freestanding porous silicon photonic crystal particles is described. An electrochemically prepared film of porous silicon on a crystalline silicon substrate is patterned with an SU8‐25 photoresist, and the unmasked porous silicon is removed with a chlorine plasma reactive ion etch. Porous microparticles are then removed from the substrate by electropolishing. Scanning electron microscopy and microscopic reflection spectroscopy are used to characterize the geometry and optical properties of the freestanding particles. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Nanostructured one-and three-dimensional magnetophotonic crystals based on porous silicon and artificial opals

Nanostructured one-and three-dimensional magnetophotonic crystals are produced by infiltration of yttrium-iron garnet with bismuth into photonic crystals based on porous silicon and artificial opals. The magnetic properties of the resulting structures are studied by generation of the magnetically induced second harmonics. The magnetic contrast of the second harmonics intensity in the spectral region of the photonic gap edge of the photonic crystal is 10–15%.     

Confinement in a planar waveguide with porous silicon omnidirectional mirrors as confining walls

We present the design and study of waveguide structures based on porous silicon where the light confinement is not due to the usual total reflection effect but to the use of photonic crystals (PCs) as confining walls. These PC are omnidirectional mirrors (OMs), consisting of the periodic repetition of two porous silicon layers with different refractive indices and thicknesses. They reflect the radiation for all angles of incidence within a frequency range called the omnidirectional band gap (OBG). We have followed the PC formalism to investigate the properties of the OM as a multimode waveguide: the number of modes within the band gap, their field spatial distribution and their confinement as a function of the frequency and the core thickness.     

Optical properties of multilayered Period-Doubling and Rudin-Shapiro porous silicon dielectric heterostructures

To investigate the optical properties in quasi-regular porous-silicon-based dielectric Period-Doubling and Rudin-Shapiro multilayer systems, we study here the reflection of light from these structures. The Period-Doubling and Rudin-Shapiro structures are fabricated in such a way that the optical thickness of each layer is one quarter of 600 and 640 nm respectively. We find that porous silicon Period-Doubling dielectric multilayers could demonstrate the optical properties similar to the classical periodic Febry–Perot interference filters with one or multiple resonant peaks, but with an advantage of having total optical thickness much lesser than the periodic structures. Additionally, light propagation in porous silicon Rudin-Shapiro structures is investigated for the first time, both theoretically and experimentally. The reflectance spectra of the structures exhibit photonic band gaps centered at predetermined wavelengths. In both cases, numerical simulation of light transmission is performed using transfer matrix method.     

Synthesis and characterization of porous silicon layers for 1D photonic crystal application

In this paper, we studied the optical and physical properties of electrochemically prepared porous silicon layers. The atomic force microscopy analysis showed that the etching depth, pore diameter and surface roughness increase as the etching time increased from 30 to 50 mA/cm². By tuning two current densities J₁ = 50 mA/cm² and J₂ = 30 mA/cm², two samples of 1D porous silicon photonic crystals were fabricated. The layered structure of 1D photonic crystals has been confirmed by scanning electron microscopy measurement which showed white and black strips of two distinct refractive index layers. Finally, the measured reflectance spectra of 1D porous silicon photonic crystals were compared with simulated results.     

Study on the thermal isolation properties of porous silicon photonic crystal

The thermal isolation properties of porous silicon photonic crystal structures have been designed and discussed theoretically. Excellent thermal isolation properties can be obtained on such a porous silicon photonic crystal, even better than that of porous silicon with high porosity. Due to the excellent thermal isolation properties of the porous silicon photonic crystal structures, they can be used as the thermal isolation substrates in infrared detectors     

One-dimensional photonic crystal fabricated by the photochemical etching of silicon

The formation of periodic wall arrays on an n-type (100) Si substrate with V-shaped seed grooves on the surface was investigated. The influence of silicon sidewall roughness on the optical properties of onedimensional (1D) of photonic crystals obtained on the basis of the arrays was studied. The reflection spectra of the 1D photonic crystals exhibit a high modulation level of up to 95% and photonic band gaps of a high order that are in good agreement with calculations over a wide spectral range (1.5—15 μm).