Magnetostriction of TbxHo0.75−xPr0.25(Fe0.9B0.1)2 (x=0–0.3) compounds

The Tb_xHo_0.75−xPr_0.25(Fe_0.9B_0.1)₂ (x=0, 0.1, 0.15, 0.2, 0.25, and 0.3) compounds are found to stabilize in a cubic Laves phase structure. The lattice parameter, magnetostriction (at 10 kOe), and Curie temperature are found to increase with increasing Tb content. The compound with x=0.15 exhibits a possible anisotropy compensation between the Tb and (Ho/Pr) sublattices. The easy magnetization direction rotates towards the 〈1 1 1〉 from the 〈1 0 0〉 direction, with increasing Tb content. The splitting of the (4 4 0) peak accompanied by the spontaneous magnetostriction-induced rhombohedral distortion is observed for compounds with x?0.15 and the spontaneous magnetostriction (λ_1 1 1) is found to increase with Tb content.     

Structure,magnetic properties and magnetostriction of Fe81Ga19 thin films

The structure, magnetic properties and magnetostriction of Fe₈₁Ga₁₉ thin films have been investigated by using X-ray diffraction analysis, scanning electron microscope (SEM), vibrating sample magnetometer and capacitive cantilever method. It was found that the grain size of as-deposited Fe₈₁Ga₁₉ thin films is 50–60 nm and the grain size increases with increase in the annealing temperature. The remanence ratio (M_r/M_s) of the thin films slowly decreases with increase in the annealing temperature. However, the coercivity of the thin films goes the opposite way with increase in the annealing temperature. A preferential orientation of the Fe₈₁Ga₁₉ thin film fabricated under an applied magnetic field exists along 〈1 0 0〉 direction due to the function of magnetic field during sputtering. An in-plane-induced anisotropy of the thin film is well formed by the applied magnetic field during the sputtering and the formation of in-plane-induced anisotropy results in 90° rotations of the magnetic domains during magnetization and in the increase of magnetostriction for the thin film.     

Structural and surface properties of Si1−xGex thin films obtained by reduced pressure CVD

This paper investigates the structure and surface characteristics, and electrical properties of the polycrystalline silicon-germanium (poly-Si_1−xGe_x) alloy thin films, deposited by vertical reduced pressure CVD (RPCVD) in the temperature range between 500 and 750 °C and a total pressure of 5 or 10 Torr. The samples exhibited a very uniform good quality films formation, with smooth surface with rms roughness as low as 7 nm for all temperature range, Ge mole fraction up to 32% (at 600 °C), textures of 〈2 2 0〉 preferred orientation at lower temperatures and strong 〈1 1 1〉 at 750 °C, for both 5 and 10 Torr deposition pressures. The ³¹P⁺ and ¹¹B⁺ doped poly-Si_1−xGe_x films exhibited always lower electrical resistivity values in comparison to similar poly-Si films, regardless of the employed anneal temperature or implantat dose. The results indicated also that poly-Si_1−xGe_x films require much lower temperature and ion implant dose than poly-Si to achieve the same film resistivity. These characteristics indicate a high quality of obtained poly-Si_1−xGe_x films, suitable as a gate electrode material for submicron CMOS devices.     

Magnetic ordering above room temperature in the sigma-phase of Fe66V34

Magnetic properties of four sigma-phase Fe_100−xV_x samples with 34.4?x?55.1 were investigated by Mössbauer spectroscopy and magnetic measurements in the temperature interval 4.2-300 K. Four magnetic quantities, viz. hyperfine field, Curie temperature, magnetic moment and susceptibility, were determined. The sample containing 34.4 at% V was revealed to exhibit the largest values found up to now for the sigma-phase for average hyperfine field, 〈B〉=12.1 T, average magnetic moment per Fe atom, 〈μ〉=0.89 μ_B, and Curie temperature, T_C=315.3 K. The quantities were shown to be strongly correlated with each other. In particular, T_C is linearly correlated with 〈μ〉 with a slope of 406.5 K/μ_B, as well as 〈B〉 is so correlated with 〈μ〉, yielding 14.3 T/μ_B for the hyperfine coupling constant.     

Effect of growth parameters on the structure and magnetic properties of thin polycrystalline Fe films fabricated on Si〈1 0 0〉 substrates

This paper deals with the experimental investigation of the structure and magnetic properties of thin polycrystalline Fe films. Two sets of 50 ± 2 nm thick Fe films were fabricated on Si〈1 0 0〉 substrates with native oxides in place by varying (i) the sputter pressure p_Ar and (ii) the Fe sputter power P_Fe. X-ray diffraction (XRD) study revealed that all films grew with strong 〈1 1 0〉 texture normal to the film plane. No higher order peaks were observed in any of the films studied. For both film sets, the lattice constant (a) was less than the bulk Fe lattice constant (a₀ = 2.866 Å), which suggested the existence of compressive strain in all films. Two regions of homogeneous strain were observed over the range of p_Ar studied. Magneto-optical Kerr effect (MOKE) measurements showed that all films exhibited magnetically isotropic behaviour. The magnetic properties were observed to be influenced strongly by p_Ar. The film grown at p_Ar = 4 μbar was the most softest (H_s = 100 ± 8 kA m⁻¹, M_r/M_s = 0.87 ± 0.02) film among all the films studied. The magnetic properties were found to be independent of P_Fe. The effective saturation magnetostriction constant λ_eff determined (using the Villari method) was positive (4 ± 1 ppm) and observed to vary within the calculated error.     

Infrared optical properties of Ba(Zr0.20Ti0.80)O3 and Ba(Zr0.30Ti0.70)O3 thin films prepared by sol-gel method

Ba(Zr_xTi_1−x)O₃ (BZT) (x = 0.20 and 0.30) thin films are deposited on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrate by sol-gel method. X-ray diffraction patterns show that the thin films have a good crystallinity. Optical properties of the films in the wavelength range of 2.5-12 μm are studied by infrared spectroscopic ellipsometry (IRSE). The optical constants of the BZT thin films are determined by fitting the IRSE data using a classical dispersion formula. As the wavelength increases, the refractive index decreases, while the extinction coefficients increase. The effective static ionic charges are derived, which are smaller than that in a purely ionic material for the BZT thin films.     

Field electron emission from HfNxOy thin films deposited by direct current sputtering

HfN_xO_y thin films were deposited on Si substrates by direct current sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). SEM indicates that the film is composed of nanoparticles. AFM indicates that there are no sharp protrusions on the surface of the film. XRD pattern shows that the films are amorphous. The field electron emission properties of the film were also characterized. The turn-on electric field is about 14 V/μm at the current density of 10 μA/cm², and at the electric field of 24 V/μm, the current density is up to 1 mA/cm². The field electron emission mechanism of the HfN_xO_y thin film is also discussed.     

Enhanced field emission from Si doped nanocrystalline AlN thin films

Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 °C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E_to) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm² has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.     

Influence of sputtering pressure on the giant magnetoresistance and structure in Fe–Cu–Ni granular thin films

Composition, structure and giant magnetoresistance in Fe_xCu_yNi_z films prepared at different sputtering pressures were investigated. X-ray diffraction studies showed only Cu (1 1 1) peak from the Cu grain. The shifts in the d-spacing d₁₁₁ of Cu indicates a progressive substitution of Ni in the Cu lattice. Similar trends in d₁₁₁ of Cu observed for the samples prepared at different sputtering pressures indicate that the structural behaviour of the samples is nearly independent of the sputtering pressure. A significant enhancement of magnetoresistance (MR) for the samples sputtered at 0.001 mbar as compared to that sputtered at 0.02 mbar is attributed to the reduced role of residual gas impurities in the films upon lowering the sputtering pressure. An interesting observation is that the MR did not significantly decrease even with a large substitution of Ni in the Cu grains.     

Characterization of Cu additive FePt-C granular films

FePt-C granular films doped with different Cu atomic fractions (x_Cu) were fabricated using facing-target sputtering at room temperature and subsequently annealed at 650 °C. Structural analyses reveal that the as-deposited films are in amorphous state. Appropriate Cu addition (x_Cu = 14) can improve the ordering of L1₀ FePt phase, and excessive Cu doping destroys the formation of ordered L1₀ phase with the appearance of Fe₃C and CuPt phases. Besides, preferential graphitization of amorphous carbon (a-C) occurs near large metal particles upon annealing. Annealing turns the as-deposited superparamagnetic films into ferromagnetic associated with coercivity peaks at x_Cu = 14, drops from ∼11.2 kOe at 5 K to ∼7.2 kOe at 300 K in a 50 kOe field.     

Magnetostriction, Curie temperature and microstructure of Tb0.29(Dy1−xPrx)0.71Fe1.97 oriented alloys

The Tb_0.29(Dy_1−xPr_x)_0.71Fe_1.97 (x=0, 0.1, 0.2 and 0.3) alloys were prepared by directional solidification method. The orientation, magnetostriction λ, Curie temperature T_c and microstructure of alloys were characterized by XRD, standard resistant strain gauge technique, VSM and SEM-EDS. The results reveal that the alloys have a preferred orientation of 〈1 1 0〉 and 〈1 1 3〉 direction when x>0. With the increase in Pr content, the T_c of alloys decreases gradually and the non-cubic phase appears, resulting in the decline of λ dramatically, from 1935.2×10⁻⁶ for x=0 to 695.9×10⁻⁶ for x=0.3 at a compressive stress of 6 MPa and a magnetic field of H=240 kA m⁻¹.     

Effects of oxygen partial pressure and substrate temperature on the structure and optical properties of MgxZn1−xO thin films prepared by magnetron sputtering

Deposited with different oxygen partial pressures and substrate temperatures, Mg_xZn_1−xO thin films were prepared using a Mg_0.6Zn_0.4O ceramic target by magnetron sputtering. The structural and optical properties of the prepared thin films were investigated. The X-ray diffraction spectra reveal that all the films on quartz substrate are grown along (2 0 0) orientation with cubic structure. The lattice constant decreases and the crystallite size increases with the increase of substrate temperature. Both energy dispersive X-ray spectroscopy and calculated results suggest the ratio of Mg/Zn increases with increasing substrate temperature. The thin film deposited with T_s = 500 °C has a minimal rms roughness of 7.37 nm. The transmittance of all the films is higher than 85% in the visual region. The optical band gap is not sensitive to the oxygen partial pressure, while it increases from 5.63 eV for T_s = 100 °C to 5.95 eV for T_s = 700 °C. In addition, the refractive indices calculated from transmission spectra are sensitive to the substrate temperature. The photoluminescence spectra of Mg_xZn_1−xO thin films excited by 330 nm ultraviolet light indicate that the peak intensity of the spectra is influenced by the oxygen partial pressure and substrate temperature.     

Magnetostrictions and Curie temperature measurements of (Fe–Co)91−xMo8Cu1Bx alloys with varying Co/Fe ratio

Amorphous rapidly quenched ribbons of (Fe–Co)₇₉Mo₈Cu₁B₁₂ and (Fe–Co)₇₆Mo₈Cu₁B₁₅ with the ratio of Co/Fe from 0 to 1 and 0 to 2, respectively, were prepared by planar flow casting. The dependence of Curie temperature T_C on Co/Fe ratio was determined from temperature dependencies of sample dilatation measured using a special dilatometer designed for these materials. Due to the presence of the invar effect, it was possible to measure the spontaneous volume magnetostriction in the temperature interval between 300 K and T_C, which is of the order of 10⁻³. Using special disc-shaped samples field dependencies of magnetostriction in parallel and perpendicular directions of the applied magnetic field were obtained by direct measurement. Subsequently, saturation magnetostriction and volume magnetostriction as well as forced magnetostriction were computed. Saturation magnetostriction λ_S increases with increasing Co/Fe ratio from 0 up to 15 and from 0 up to 17 ppm for both alloy systems, respectively, depending both on the Co/Fe ratio and on the shift of T_C with composition. After attaining the maximal value and further increase of the Co/Fe ratio the saturation magnetostriction decreases. Both alloy systems with ratio Co/Fe=0 exhibit T_C near room temperature and the system passes into paramagnetic state. T_C for higher Co/Fe ratios approaches the glass transition region. In paramagnetic state the field dependencies of magnetostriction are practically linear functions of applied field and approach saturation only for high-field values.     

Synthesis and magnetic properties of melt-spun high Pr-content magnetostrictive alloys

Pseudobinary high Pr-content Tb_1−xPr_x(Fe_0.4Co_0.6)_1.93 (0.70≤x≤1.00) magnetostrictive alloys have been fabricated by a melt-spinning method. The effects of the composition, spinning, and annealing processes on the structure, thermal stability, and magnetic properties are investigated. At a wheel speed of v≤30 m/s, the as-spun ribbons consist of a mixture of (Tb,Pr)(Fe,Co)₂ cubic Laves phase and some non-cubic phases. A single (Tb,Pr)(Fe,Co)₂ phase with MgCu₂-type structure is formed with the process for the speed of v≥35 m/s and subsequent annealing at 500 °C for 30 min. The lattice parameter of the Tb_1−xPr_x(Fe_0.4Co_0.6)_1.93 Laves phase increases from 0.7354 nm for x=0.70 to 0.7384 nm for x=1.00 and approximately follows the linear Vegard's law. The Curie temperature decreases, while the saturation magnetization increases as increasing Pr content. The Pr-rich alloys possess the relatively lower coercivity and the faster saturation of magnetostriction as compared with the Tb-rich alloys, which can be understood by their lower magnetic anisotropy.     

Structural studies of evaporated CoxCr1−x/Si (1 0 0) and CoxCr1−x/glass thin films

Series of Co_xCr_1−x thin films have been evaporated under vacuum onto Si (1 0 0) and glass substrates. Chemical composition and interface properties have been studied by modelling Rutherford backscattering spectra (RBS) using SIMNRA programme. Thickness ranges from 17 to 220 nm, and x from 0.80 to 0.88. Simulation of the energy spectra shows an interdiffusion profile in the thickest films, but no diffusion is seen in thinner ones. Microscopic characterizations of the films are done with X-ray diffraction (XRD) measurements. All the samples are polycrystalline, with an hcp structure and show a 〈0 0 0 1〉 preferred orientation. Atomic force microscopies (AFM) reveal very smooth film surfaces.     

Properties of dc magnetron sputtered Cu2O films prepared at different sputtering pressures

The sputtering pressures maintained during the deposition of Cu₂O films, by dc reactive magnetron sputtering, influence the structural, electrical and optical properties. The crystalline orientation mainly depends on the sputtering pressure. The films deposited at a sputtering pressure of 4 Pa showed single-phase Cu₂O films along (1 1 1) direction. The electrical resistivity of the films increased from 1.1 × 10¹ Ω cm to 3.2 × 10³ Ω cm. The transmittance of the films increased from 69% to 88% with the increase of sputtering pressure from 2.5 Pa to 8 Pa.     

Influence of the substrate on ferroelectric properties of 〈1 1 1〉 oriented rhombohedral Pb(Zr0.6Ti0.4)O3 thin films

〈1 1 1〉-oriented Pb(Zr_0.6Ti_0.4)O₃ thin films were elaborated in the same run by RF multitarget sputtering on Si/SiO₂/TiO₂/Pt(1 1 1) and LaAlO₃/Pt(1 1 1) substrates. PZT thin films were textured, exhibiting 〈1 1 1〉 fibre texture on silicon substrates whereas epitaxial relationships were found when grown on LaAlO₃/Pt(1 1 1). On the latter substrate, values of spontaneous polarization and of dielectric permittivity were measured close to that calculated previously along the 〈1 1 1〉 direction of PZT rhombohedral single crystal. On the contrary, spontaneous polarization and dielectric permittivity measured on PZT thin films deposited on platinized silicon were found deviating from calculated values. These different electrical results are attributed to different ferroelectric domain configurations.     

Characterization of HfOxNy gate dielectrics using a hafnium oxide as target

Hafnium oxynitride (HfO_xN_y) gate dielectric has been deposited on Si (1 0 0) by means of radio frequency (rf) reactive sputtering using directly a HfO₂ target in N₂/Ar ambient. The thermal stability and microstructural characteristics for the HfO_xN_y films have been investigated. XPS results confirmed that nitrogen was successfully incorporated into the HfO₂ films. XRD analyses showed that the HfO_xN_y films remain amorphous after 800 °C annealing in N₂ ambient. Meanwhile the HfO_xN_y films can also effectively suppress oxygen diffusion during high temperature annealing and prevent interface layer from forming between HfO_xN_y films and Si substrates. AFM measurements demonstrated that surface roughness of the HfO_xN_y films increase slightly as compared to those pure HfO₂ films after post deposition annealing. By virtue of building reasonable model structure, the optical properties of the HfO_xN_y films have been discussed in detail.     

Development of structural and optical properties of WOx films upon increasing oxygen partial pressure during reactive sputtering

WO_x films were prepared by reactive dc magnetron sputtering using tungsten target. Sputtering was carried out at a total pressure of 1.2 Pa using a mixture of argon plus oxygen in an effort to determine the influence of the oxygen partial pressure on structural and optical properties of the films. The deposition rate decreases significantly as the surface of the target is oxidized. X-Ray diffraction revealed the amorphous nature of all the films prepared at oxygen partial pressures higher than 1.71×10⁻³ Pa. For higher oxygen partial pressures, fully transparent films were deposited, which showed a slight increase in optical band gap with increasing oxygen partial pressure, while the refractive index was simultaneously decreased.     

Structure, magnetic and optical properties of polycrystalline Co-doped TiO2 films

Co-doped TiO₂ films were fabricated under different conditions using reactive facing-target magnetron sputtering. Co doping improves the transformation of TiO₂ from anatase phase to rutile phase. The chemical valence of doped Co in the films is +2. All the films are ferromagnetic with a Curie temperature above 340 K. The average room-temperature moment per Co of the Co-doped TiO₂ films fabricated at 1.86 Pa decreases from 0.74 μ_B at x=0.03 to 0.02 μ_B at x=0.312, and decreases from 0.54 to 0.04 μ_B as x increases from 0.026 to 0.169 for the Co-doped TiO₂ films fabricated at 0.27 Pa. The ferromagnetism originates from the oxygen vacancies created by Co²⁺ dopants at Ti⁴⁺ cations. The optical band gaps value (E_g) of the Co-doped TiO₂ films fabricated at 1.86 Pa decreases linearly from 3.35 to 2.62 eV with the increasing x from 0 to 0.312. For the Co-doped TiO₂ films fabricated at 1.86 Pa, the E_g decreases linearly from 3.26 to 2.53 eV with increasing x from 0 to 0.350.