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1.
杨志清  王飞利  林常规 《物理学报》2013,62(18):184211-184211
实现玻璃微晶化过程控制的基础是要充分认识其析晶行为及动力学机理. 利用示差扫描量热法和析晶热处理等手段, 研究发现 20GeS2·80Sb2S3硫系玻璃属于表面析晶, 在268℃(Tg+30℃)下热处理60 h, 可以获得表面约40 μm的Sb2S3晶层复合玻璃陶瓷样品. 在此基础上, 利用非等温法从理论上分析该玻璃的析晶动力学机理. 计算得到其析晶活化能Ec为(223.6±24.1)kJ·mol-1, 在热处理温度(268℃)下的析晶速率常数K为1.23×10-4 s-1, 属于较难析晶的玻璃组成; 玻璃的晶体生长指数m和晶体生长维数n均为2, 表明其Sb2S3相的析晶行为是二维生长过程, 与析晶实验结果完全相符. 由此可知, 对于Sb2S3晶体复合的硫系玻璃陶瓷样品可通过玻璃粉末压片烧结、带铸法或丝网印刷法制备获得, 为今后功能硫系玻璃的开发提供实验依据和理论指导. 关键词: 硫系玻璃 微晶化 析晶动力学 析晶行为  相似文献   

2.
Sb2Se3是一种低成本、环境友好、具有良好应用前景的光伏材料.目前Sb2Se3太阳能电池的光电转换效率已经提高到了10%.载流子复合动力学是决定Sb2Se3太阳能电池光电转换效率的关键因素.本文利用飞秒时间分辨表面瞬态反射谱详细分析了Sb2Se3表面、Sb2Se3/CdS界面载流子复合动力学过程.根据相对反射率变化?R/R的演化,得到Sb2Se3载流子热化、带隙收缩时间约为0.2—0.5 ps,估计热载流子冷却时间为3—4 ps.还实验证实在Sb2Se3/CdS界面处存在自由电子转移和浅束缚电子转移两种电子转移过程.本文提供了Sb2Se3表面瞬态反射谱分析方法,所得实验结果拓展了对Sb2Se3表...  相似文献   

3.
许思维  王丽  沈祥 《物理学报》2015,64(22):223302-223302
用拉曼散射光谱和X射线光电子能谱研究了GexSb20Se80-x(x=5 mol%, 10 mol%, 15 mol%, 17.5 mol%, 20 mol%和25 mol%)玻璃的结构. 通过对拉曼光谱和X射线光电子能谱(Ge 3d, Sb 4d 和Se 3d谱)进行分解, 发现当硫系玻璃处于富Se状态下时, 玻璃结构中会出现Se–Se–Se结构单元, 其数量随着Ge含量的增加而迅速减少, 并最终在Ge15Sb20Se65玻璃结构中消失; Ge和Sb原子分别以GeSe4/2 四面体和SbSe3/2三角锥结构单元在玻璃结构中出现, GeSe4/2四面体结构单元的数量会随着Ge浓度的增加而增加, 而SbSe3/2三角锥结构单元的数量基本保持稳定. 另一方面, 在缺Se的硫系玻璃中, 玻璃会有Ge–Ge和Sb–Sb同极键产生, 随着Ge含量的增大, 这种同极键的数量会越来越多; 而GeSe4/2四面体和SbSe3/2三角锥结构的数量则相应减少. 在所有玻璃样品的结构中均有同极键Se–Se的存在. 当玻璃组分越接近完全化学计量配比时, 异质键Ge–Se和Sb–Se将占据玻璃结构中的主导地位, 同极键Ge–Ge, Sb–Sb和Se–Se 的比例降为最小.  相似文献   

4.
刘军芳  苏良碧  徐军 《物理学报》2013,62(3):37804-037804
采用高温熔融法制备了xBi2O3-50B2O3-(50-x)BaO玻璃, 测定了样品玻璃的近红外光区的发射谱、荧光寿命以及Raman光谱. 在808 nm波长光的激发下, 50Bi2O3-50B2O3二元玻璃中未观察到近红外发光; 随体系中BaO的加入, 当x为40, 45以及49时, 玻璃样品中观察到了近红外宽带发光现象; BaO含量进一步增加, 当x=10–30时, 近红外发光现象消失; 而当玻璃中Bi浓度很低时, 在0.5Bi2O3-50B2O3-50BaO及1Bi2O3-50B2O3-50BaO玻璃中发现了近红外发光现象, 且存在多个发光峰. 对铋离子近红外发光机理进行了初步的探讨.  相似文献   

5.
制备了系列Er3+/Yb3+共掺碲硼硅酸盐玻璃样品(85-x)TeO2-15B2O3-xSiO2 (TBS x=0,5,10,15,20 mol%).测试和分析了样品的吸收光谱、荧光光谱、能级寿命、红外透射光谱及差热特性.并通过对Er3+离子4I13/24I15/2跃迁发射谱线的高斯拟合,设计了一个简单的四能级结构估算了Er3+离子4I13/24I15/2能级在碲硼硅酸盐中的Stark分裂情况.研究表明SiO2的引入能有效地改善玻璃的热稳定性和光谱性能,玻璃析晶温度Tx与玻璃转变温度Tg之差(ΔT=Tx-Tg)可达178℃,说明碲硼硅酸盐是一种适合于光纤拉制的玻璃基质材料.比较了不同基质玻璃中Er3+离子的荧光半高宽和受激发射截面,结果表明TBS玻璃系统具有较好的带宽性能,是一种优良的宽带光纤放大器候选基质材料. 关键词: 碲硼硅酸盐 热稳定性 高斯拟合 -基')" href="#">OH-基  相似文献   

6.
薛丁江  石杭杰  唐江 《物理学报》2015,64(3):38406-038406
硒化锑(Sb2Se3)是一种二元单相化合物, 原料储量大、毒性低、价格便宜; 同时其禁带宽度合适(~1.15 eV), 吸光系数大(>105 cm-1), 长晶温度低, 非常适合制作新型低成本低毒的薄膜太阳能电池, 理论光电转换效率可达30%以上. 目前文献报道的Sb2Se3薄膜太阳能电池效率已达3.7%, 初步证明了Sb2Se3材料在薄膜太阳能电池应用方面的巨大潜力. 本文综述了近年来Sb2Se3太阳能电池的研究进展, 着重介绍了Sb2Se3的材料特性和薄膜制备及相关理论研究, 阐述了不同结构电池器件的研究进展, 并对其发展趋势进行了展望.  相似文献   

7.
采用磁控三靶(Si,Sb及Te)共溅射法制备了Si掺杂Sb2Te3薄膜,作为对比,制备了Ge2Sb2Te5和Sb2Te3薄膜,并且采用微加工工艺制备了单元尺寸为10μm×10μm的存储器件原型来研究器件性能.研究表明,Si掺杂提高了Sb2Te3薄膜的晶化温度以及薄膜的晶态和非晶态电阻率,使得其非晶态与晶态电阻率之比达到106,提高了器件的电阻开/关比;同Ge2Sb2Te5薄膜相比,16at% Si掺杂Sb2Te3薄膜具有较低的熔点和更高的晶态电阻率,这有利于降低器件的RESET电流.研究还表明,采用16at% Si掺杂Sb2Te3薄膜作为存储介质的存储器器件原型具有记忆开关特性,可以在脉高3V、脉宽500ns的电脉冲下实现SET操作,在脉高4V、脉宽20ns的电脉冲下实现RESET操作,并能实现反复写/擦,而采用Ge2Sb2Te5薄膜的相同结构的器件不能实现RESET操作. 关键词: 相变存储器 硫系化合物 2Te3薄膜')" href="#">Si掺杂Sb2Te3薄膜 SET/RESET转变  相似文献   

8.
制备了一系列碲铌酸盐玻璃85TeO2-(15-x)Nb2O5-xB2O3-1%Er2O3(TNBx=0, 3, 6, 9, 12, 15).根据Judd-Ofelt(J-O)和McCumber理论,讨论和分析了B2O3含量对掺铒碲铌酸盐玻璃热稳定性及光谱性质影响.研究发现,玻璃开始析晶温度和玻璃转变温度差值ΔT(Tx-Tg),J-O强度参数,FWHM和峰值受激发射截面的乘积在B2O3引入摩尔分数为9%时达到最大值.同时,Er3+:4I13/2能级寿命也随着B2O3含量的增加而单调增加.结果表明,在掺铒碲铌玻璃中,适量的B2O3能较好地提高玻璃的热稳定性能和Er3+离子的光谱性质.  相似文献   

9.
刘丽莎  吕树臣  孙江亭 《物理学报》2010,59(9):6637-6641
本文制备了Er3+/Yb3+共掺TeO2-WO3-Bi2O3(TWB)玻璃. 测试和分析了样品的吸收光谱、荧光光谱及上转换发光. 用Judd-Oflet(J-O)理论计算了Er3+在玻璃样品中的光谱强度参数,随着Bi2O3含量的增加,Ω2增加,Ω4 关键词: 碲酸盐玻璃 光谱性质 上转换  相似文献   

10.
贾玉洁  林健  张文俊  钱帅  李辰  张硕 《发光学报》2014,35(3):287-292
Er3+/Yb3+ 共掺的碲酸盐玻璃由于其良好的上转换发光性能而得到广泛的研究。本文将氟化物引入碲酸盐玻璃中,通过熔融法制备了量比为70TeO2-(30-x)ZnO-xZnF2-0.15Er2O3-1.5Yb2O3(x=0,5,10,15,20)的碲酸盐氧氟玻璃样品,并测试其热稳定性、拉曼光谱以及受激发射光谱。实验结果表明,随着氟化物含量的提高,Er3+离子的410,555,670 nm上转换发光和2~3 μm波段中红外发光得到增强,并且红光提高强度比绿光和蓝光更明显。在分析了氟离子引入后对上转换与近中红外波段发光的内在影响机制发现:碲酸盐玻璃系统中的氟化物一方面促进能量传递过程中Er3+离子的双光子吸收,促进粒子跃迁至相应的高能级;另一方面,引入氟化物后的碲酸盐玻璃的最大能量声子态密度下降也是降低无辐射跃迁概率、提高上转换和中红外发射强度的重要原因。  相似文献   

11.
Bismuth telluride(Bi_2Te_3) based alloys, such as p-type Bi_(0.5)Sb_(1.5)Te_3, have been leading candidates for near room temperature thermoelectric applications. In this study, Bi_(0.48)Sb_(1.52)Te_3 bulk materials with MnSb_2Se_4 were prepared using high-energy ball milling and spark plasma sintering(SPS) process. The addition of MnSb_2Se_4 to Bi_(0.48)Sb_(1.52)Te_3 increased the hole concentration while slightly decreasing the Seebeck coefficient, thus optimising the electrical transport properties of the bulk material. In addition, the second phases of MnSb_2Se_4 and Bi_(0.48)Sb_(1.52)Te_3 were observed in the Bi_(0.48)Sb_(1.52)Te_3 matrix. The nanoparticles in the semi-coherent second phase of MnSb_2Se_4 behaved as scattering centres for phonons,yielding a reduction in the lattice thermal conductivity. Substantial enhancement of the figure of merit, ZT, has been achieved for Bi_(0.48)Sb_(1.52)Te_3 by adding an Mn_(0.8)Cu_(0.2)Sb_2Se_4(2mol%) sample, for a wide range of temperatures, with a peak value of 1.43 at 375 K, corresponding to ~40% improvement over its Bi_(0.48)Sb_(1.52)Te_3 counterpart. Such enhancement of the thermoelectric(TE) performance of p-type Bi_2Te_3 based materials is believed to be advantageous for practical applications.  相似文献   

12.
We fabricated Sb_2 Se_3 thin film solar cells using tris(8-hydroxy-quinolinato) aluminum(Alq_3) as an electron transport layer by vacuum thermal evaporation.Another small organic molecule of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine(NPB) was used as a hole transport layer.We took ITO/NPB/Sb_2Se_3/Alq_3/Al as the device architecture.An open circuit voltage(V_(oc)) of 0.37 V,a short circuit current density(J_(sc)) of 21.2 mA/cm~2,and a power conversion efficiency(PCE) of 3.79% were obtained on an optimized device.A maximum external quantum efficiency of 73% was achieved at 600 nm.The J_(sc),V_(oc),and PCE were dramatically enhanced after introducing an electron transport layer of Alq_3.The results suggest that the interface state density at Sb_2 Se_3/Al interface is decreased by inserting an Alq_3 layer,and the charge recombination loss in the device is suppressed.This work provides a new electron transport material for Sb_2Se_3 thin film solar cells.  相似文献   

13.
We experimentally demonstrate a femtosecond mode-locked thulium-holmium(Tm-Ho) co-doped fiber laser incorporating a saturable absorber(SA) based on a bulk-structured bismuth selenide(Bi_2Se_3) topological insulator(TI). The SA was prepared by depositing a mechanically exfoliated Bi_2Se_3 TI layer onto a side-polished optical fiber platform. Unlike high-quality nano-structured Bi_2Se_3 TI-based SA, bulk-structured Bi_2Se_3 with non-negligible oxidation was used as a saturable absorption material for this experimental demonstration due to its easy fabrication process. The saturation power and modulation depth of the prepared SA were measured to be ~ 28.6 W and ~13.4%, respectively. By incorporating the prepared SA into a Tm-Ho co-doped fiber ring cavity, stable soliton pulses with a temporal width of ~ 853 fs could be generated at 1912.12 nm. The 3-dB bandwidth of the mode-locked pulse was measured to be ~4.87 nm. This experimental demonstration reaffirms that Bi_2Se_3 is a superb base material for mid-infrared passive mode-locking even under oxidation.  相似文献   

14.
By using scanning tunneling microscope/microscopy(STM/STS), we reveal the detailed electronic structures around the sharp edges and strained terraces of lateral monolayer-bilayer Pd2Se3 heterostructures. We find that the edges of such heterostructures are well-defined zigzag type. Band bending and alignment are observed across the zigzag edge, forming a monolayer-bilayer heterojunction. In addition, an n-type band bending is induced by strain on a confined bilayer Pd2Se3 terrace. These results provide effective toolsets to tune the band structures in Pd2Se3-based heterostructures and devices.  相似文献   

15.
Two-dimensional(2D) magnetic crystals have attracted great attention due to their emerging new physical phenomena. They provide ideal platforms to study the fundamental physics of magnetism in low dimensions. In this research,magnetic tunneling junctions(MTJs) based on X Se_2(X = Mn, V) with room-temperature ferromagnetism were studied using first-principles calculations. A large tunneling magnetoresistance(TMR) of 725.07% was obtained in the MTJs based on monolayer MnSe_2. Several schemes were proposed to improve the TMR of these devices. Moreover, the results of our non-equilibrium transport calculations showed that the large TMR was maintained in these devices under a finite bias.The transmission spectrum was analyzed according to the orbital components and the electronic structure of the monolayer X Se_2(X = Mn, V). The results in this paper demonstrated that the MTJs based on a 2D ferromagnet with room-temperature ferromagnetism exhibited reliable performance. Therefore, such devices show the possibility for potential applications in spintronics.  相似文献   

16.
In this review article, the recent experimental and theoretical research progress in Bi_2Se_3-and Bi_2Te_3-based topological insulators is presented, with a focus on the transport properties and modulation of the transport properties by doping with nonmagnetic and magnetic elements. The electrical transport properties are discussed for a few different types of topological insulator heterostructures, such as heterostructures formed by Bi_2Se_3-and Bi_2Te_3-based binary/ternary/quaternary compounds and superconductors, nonmagnetic and magnetic metals, or semiconductors.  相似文献   

17.
Raman spectra and XPS studies of phase changes in Ge2Sb2Te5 films   总被引:1,自引:0,他引:1       下载免费PDF全文
刘波  宋志棠  张挺  封松林  Chen Bomy 《中国物理》2004,13(11):1947-1950
Ge_2Sb_2Te_5 film was deposited by RF magnetron sputtering on Si (100) substrate. The structure of amorphous and crystalline Ge_2Sb_2Te_5 thin films was investigated using XRD, Raman spectra and XPS. XRD measurements revealed the existence of two different crystalline phases, which has a FCC structure and a hexagonal structure, respectively. The broad peak in the Raman spectra of amorphous Ge_2Sb_2Te_5 film is due to the amorphous -Te--Te- stretching. As the annealing temperature increases, the broad peak separates into two peaks, which indicates that the heteropolar bond in GeTe_4 and the Sb-Sb bond are connected with four Te atoms, and other units such as (TeSb) Sb-Sb (Te_2) and (Sb_2) Sb-Sb (Te_2), where some of the four Te atoms in the above formula are replaced by Sb atoms, remain in crystalline Ge_2Sb_2Te_5 thin film. And from the results of Raman spectra and XPS, higher the annealing temperature, more Te atoms bond to Ge atoms and more Sb atoms substitute Te in (Te_2) Sb-Sb (Te_2).  相似文献   

18.
The ternary topological insulators Bi_2Se_(3-x)Te_x have attracted a great deal of attention due to their exotic physical and chemical properties.While most of the studies focus on the properties of these ternary TIs,limited research was performed to investigate the dynamic atomic stack of its crystal structure.We prepared highquality Bi_2Se_(3-x)Te_x thin films on Ga As(111)B substrates using molecular beam epitaxy,characterized with Raman spectroscopy,x-ray diffraction and photoelectron spectroscopy.It is found that when Se is replaced by Te,the preferred substituting sites are the middle layer at 0x1,and this is also valid for Se substituting Te at 2x3.In the middle region,the substituting atoms prefer to go to the first and the fifth layer.  相似文献   

19.
《中国物理 B》2021,30(9):97601-097601
Two-dimensional(2 D) magnetic materials have aroused tremendous interest due to the 2 D confinement of magnetism and potential applications in spintronic and valleytronic devices. However, most of the currently 2 D magnetic materials are achieved by the exfoliation from their bulks, of which the thickness and domain size are difficult to control, limiting the practical device applications. Here, we demonstrate the realization of thickness-tunable rhombohedral Cr_2Se_3 nanosheets on different substrates via the chemical vapor deposition route. The magnetic transition temperature at about 75 K is observed. Furthermore, van der Waals heterostructures consisting of Cr_2Se_3 nanosheets and monolayer WS_2 are constructed.We observe the magnetic proximity effect in the heterostructures, which manifests the manipulation of the valley polarization in monolayer WS_2. Our work contributes to the vapor growth and applications of 2 D magnetic materials.  相似文献   

20.
The Zintl compound Mg_3Sb_2 has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective,nontoxicity and environment friendly characteristics.However,the intrinsically p-type Mg_3Sb_2 shows low figure of merit(z T = 0.23 at 723 K) for its poor electrical conductivity.In this study,a series of Mg_(3-x)Li_xSb2 bulk materials have been prepared by high-energy ball milling and spark plasma sintering(SPS) process.Electrical transport measurements on these materials revealed significant improvement on the power factor with respect to the undoped sample,which can be essentially attributed to the increased carrier concentration,leading to a maximum z T of0.59 at 723 K with the optimum doping level x = 0.01.Additionally,the engineering z T and energy conversion efficiency are calculated to be 0.235 and 4.89%,respectively.To our best knowledge,those are the highest values of all reported p-type Mg_3Sb_2-based compounds with single element doping.  相似文献   

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