电解抛光法制备金属钨箔膜

研究了在硫酸甲醇体系中进行电解抛光制备状态方程(EOS)靶用钨薄膜。分析了钨的阳极极化曲线,对薄膜的表面形貌、晶粒取向、密度和厚度一致性进行了测试和分析,并制备出均方根粗糙度小于50nm、厚度一致性好于99%、能够保持原材料密度的钨箔膜,满足激光驱动材料高温高压状态方程研究的标准靶材料的需求,证明电解抛光是制备低表面粗糙度、块材密度的EOS所用金属箔材的有效手段。     

低亚表面损伤石英光学基底的加工和检测技术

制备低亚表面损伤的超光滑光学基底,是获得高损伤阈值薄膜的前提条件。针对石英材料在不同加工工序中引入亚表面损伤层的差异,首先利用共焦显微成像结合光散射的层析扫描技术,对W10和W5牌号SiC磨料研磨后的亚表面缺陷进行了检测,讨论了缺陷尺寸与散射信号强度、磨料粒径与损伤层深度间的对应关系;同时,采用化学腐蚀处理技术对抛光后样品的亚表面形貌进行了刻蚀研究,分析了化学反应生成物和亚表面缺陷对刻蚀速率的影响、不同深度下亚表面缺陷的分布特征,以及均方根粗糙度与刻蚀深度间的联系。根据各道加工工艺的不同采用了相应的亚表面检测技术,由此来确定下一道加工工序,合理的去除深度,最终获得了极低亚表面损伤的超光滑光学基底。     

二氧化锆薄膜表面粗糙度的研究

采用电子束蒸发工艺，利用泰勒霍普森相关相干表面轮廓粗糙度仪，研究了不同基底粗糙度、不同二氧化锆薄膜厚度以及不同的离子束辅助能量下所沉积的二氧化锆薄膜的表面粗糙度。结果表明：随着基底表面粗糙度的增加，二氧化锆薄膜表面粗糙度呈现出先缓慢增加，当基底的粗糙度大于10nm后呈现快速增加的趋势；随着二氧化锆薄膜厚度的增加，其表面均方根粗糙度（RMS）先减小后增大；随着辅助沉积离子能量的增加，其表面粗糙度呈现出先减小后增加的趋势。     

纳米α-Al2O3磨料抛光单晶硅片光滑表面的形成机理

"将纳米α-Al2O3粉体配制成抛光液并冷冻成冰结抛光垫对单晶硅片进行了抛光,用原子力显微镜观察了抛光表面的微观形貌并测量了其表面粗糙度,采用透射电镜观察了单晶硅片抛光后的断面形貌．为进一步分析抛光过程中的化学作用机理,采用X射线光电子能谱分析了单晶硅片抛光后表面的化学成分．利用纳米压痕仪的划痕附件对单晶硅片进行了划痕测试,研究了抛光过程中的机械作用机理．结果表明纳米α-Al2O3磨料冰冻抛光单晶硅片时,在1 mm￡1 mm的范围内得到了微观表面粗糙度为0.367 nm的超光滑表面,亚表面没有任何损伤,材     

球面光学零件气囊抛光工艺参数优化的研究

针对球面光学零件,采用气囊抛光方法对其进行加工,以正交实验为实验方法,以球面光学零件材料去除率和表面粗糙度为目标,研究了5个主要影响因素(气囊压缩量、气囊转速、内部压力、抛光液浓度和工件曲率半径)对材料去除率和表面粗糙度的影响程度,并根据实验结果优选工艺参数,找出影响材料去除率和表面粗糙度的工艺参数优化组合。以去除率和表面粗糙度为目标工艺参数,在优选后的结果指导下,根据优选后的工艺参数,以控制表面粗糙度为目标,采用离散进动方式抛光球面光学零件,可获得超精密的光滑表面。     

磷酸盐钕玻璃表面/亚表面损伤特性实验研究

系统地研究了光学研磨过程中,磨料粒径、载荷大小以及机床转速对钕玻璃表面及亚表面损伤的影响。结果表明,机床转速和载荷基本不改变材料表面粗糙度,而较大载荷或较低机床转速产生较大的亚表面缺陷,表面粗糙度和亚表面缺陷缺陷深度基本与最大磨料粒径呈正比,载荷增倍使亚表面缺陷与表面粗糙度的常数比值增加0.05。研究结果为钕玻璃加工工艺改进提供了参考依据。     

基底材料对磁控共溅射Al-Cu-Fe薄膜特性的影响

 采用磁控共溅射工艺来制备Al-Cu-Fe薄膜，选用抛光状态的纯Al、纯Cu和不同粗糙度的不锈钢基作为基底材料。通过原子力显微镜分析薄膜的表面形貌，利用扫描电镜能谱仪分析薄膜的元素含量；通过MTS纳米力学综合测试系统分析薄膜的结合强度和摩擦因数。分析结果表明：不锈钢作为基底材料的薄膜与基体的结合强度最大，其次为纯铝和纯铜。纯铜基底薄膜的摩擦因数最大，达到0.17，其余两种薄膜的摩擦因数均不大于0.03。而薄膜表面形貌与基底材料的原始形貌有直接的联系，基底原始粗糙度越小，薄膜的表面组织也越细；基底原始粗糙度越大，薄膜表面形成的晶粒的团聚越明显。     

多辊轧机冷轧技术在靶材料制备中的应用

 叙述了多辊轧机轧制金属薄膜原理，以Ti膜制备为例，借助多辊轧机冷轧技术进行1.5 μm厚钛薄带的制备工艺研究。对薄膜的特性测试结果表明：工作辊的表面粗糙度对于轧制薄膜的表面粗糙度的影响很大，降低工作辊表面的粗糙度可以得到粗糙度为25.2 nm的金属薄膜。     

液体喷射抛光时各工艺参数对材料去除量的影响

以实验为基础,研究了液体喷射抛光技术的各工艺参数,包括喷射角、工作压力、工作距离和作用时间等参量对工件材料去除的影响。获得了它们之间的关系曲线;得出了工件材料去除的规律;确定了液体喷射抛光时的最佳参数组合。为进一步研究液体喷射抛光时各工艺参数对工件表面粗糙度的影响奠定了基础。     

驱动光束不均匀性研究中的硅平面薄膜

 介绍以氧化、扩散、光刻等现代半导体技术结合化学腐蚀工艺实现对Si片的定向自截止腐蚀,制备获得用于研究驱动光束不均匀性的自支撑Si平面薄膜的工艺。通过台阶仪测量厚度在3~4 μm的Si平面薄膜,在扫描范围为1000 μm时,它的表面粗糙度在几十nm;SEM测量表明,Si薄膜表面颗粒度在纳米量级;探讨采用控制扩散、腐蚀参数和表面修饰处理来降低Si膜表面粗糙度的方法。     

用金刚石车削技术制备EOS实验用铝薄膜和铜薄膜

 具有材料理论密度的金属薄膜对于材料高压状态方程(EOS)研究而言具有重要的意义。本文提出采用金刚石车削技术，利用超精密金刚石车床、金刚石圆弧刀具及真空吸附夹持技术，对纯铝和无氧铜进行端面车削，完成了EOS实验用铝薄膜和铜薄膜的车削加工，实现了薄膜密度接近材料理论密度。精加工工艺参数为：进给量0.001 mm/r，主轴转速3000 r/min，切削深度1 μm。采用Form Talysurf series 2型触针式轮廓仪进行测量，结果表明：铝薄膜、铜薄膜厚度可以达到小于10 μm水平，表面均方根粗糙度小于5 nm，原始最大轮廓峰-谷高度小于50 nm，厚度一致性好于99%。     

热蒸镀法制备Z箍缩用铝镁合金箔材及其性能

厚度低于5 m的AlMg合金箔材可作为带材切割的原材料应用于Z箍缩物理实验。利用热蒸镀方法,通过控制沉积速率在超光滑的NaCl基片上获得了AlMg薄膜,最终在脱膜后获得了厚度低于5 m的无支撑AlMg箔材。实验对该箔材的厚度均匀性、表面粗糙度、衍射峰位、晶粒尺寸及距表面不同距离下的成份进行了分析表征。实验发现,此热蒸镀法制备的AlMg合金箔材的厚度均匀性优于8%,两面的表面粗糙度均小于180 nm,晶粒尺寸约20 nm;不同厚度样品的衍射峰位未明显偏移,箔材内应力很小;不同深度下Mg含量稳定分布,而在箔材表面杂质含量较高,在距表面6 nm以下合金含量达到预期值并趋于稳定。热蒸镀法制得的无支撑AlMg合金箔材具有厚度可控且均匀、成分稳定、内应力小的特点,适用于制备Z箍缩带阵负载。     

Microstructure and roughness improvement of polycrystalline Bi thin films upon pulsed-laser melting

Bismuth films with different thicknesses have been grown by do sputtering on substrates held at room temperature. The films are always formed by columnar crystals with a grain size comparable to the film thickness which lead to surface roughness. It increases with the thickness of the films and has a strong influence on the film optical properties. The films have been irradiated with nanosecond laser pulses, and real-time reflectivity measurements during the irradiation were used to follow the changes in the film optical properties. It will be shown that pulsed-laser irradiation of films thinner than 100 nm improves substantially their surface roughness and their crystalline quality by increasing the grain size at least one order of magnitude.     

点火黑腔用铝铜复合芯轴的制备及性能

选取纯度较高的1100铝棒作为加工模芯的原材料,利用金刚石车床精加工出表面粗糙度均方根值小于20 nm的铝模芯,采用磁控溅射的方法在铝模芯上制备厚度大于5 m的铜防护层,得到铝铜复合芯轴。对制备的铜防护层的表面微观结构、结晶性能、厚度一致性进行了分析测试,结果表明磁控溅射法制备的铜防护层沿(111)面择优生长,表面粗糙度均方根值小于30 nm,厚度一致性优于95%,圆柱度小于1 m。镀层与基底结合力强,可满足大厚度黑腔涂层的制备需求。     

Effect of substrate morphology on the roughness evolution of ultra thin DLC films

The effect of substrate roughness on growth of ultra thin diamond-like carbon (DLC) films has been studied. The ultra thin DLC films have been deposited on silicon substrates with initial surface roughness of 0.15, 0.46 and 1.08 nm using a filted cathodic vacuum arc (FCVA) system. The films were characterized by Raman spectroscope, transmission electron microscope (TEM) and atomic force microscopy (AFM) to investigate the evolution of the surface roughness as a function of the film thickness. The experimental results show that the evolution of the surface morphology in an atomic scale depends on the initial surface morphology of the silicon substrate. For smooth silicon substrate (initial surface roughness of 0.15 nm), the surface roughness decreased with DLC thickness. However, for silicon substrate with initial surface roughness of 0.46 and 1.08 nm, the film surface roughness decreased first and then increased to a maximum and subsequently decreased again. The preferred growth of the valley and the island growth of DLC were employed to interpret the influence of substrate morphology on the evolution of DLC film roughness.     

Anomalous scaling for thick electrodeposited films

Anomalous surface roughness scaling, where both the local and the large-scale roughness show a power-law dependence on the film thickness, has been widely observed. Here we show that the value of the local roughness exponent in the early stages of Cu electrodeposition depends on the deposition potential. However, initial anomalous scaling can lead to two qualitatively different types of behavior for large film thickness (t>/ or =4 microm). For Cu films electrodeposited with forced convection at high potential and current density, the anomalous scaling is transient: the local roughness saturates for the thickest films studied. When Cu films are electrodeposited at similar potential and current density but with reduced convection, no saturation of the local roughness is observed. Instead the film forms overhangs such that the surface height becomes a multivalued function of the lateral position.     

Effect of the amorphous thin layer on the surface growth of amorphous/crystalline binary multilayer films

The effect of the amorphous thin layer on the surface growth of amorphous/crystalline binary multilayer films has been studied by using a continuum model. It is shown that both the surface roughness and the growth exponent of amorphous/crystalline binary multilayer films decrease with increasing thickness ratio between amorphous and crystalline layers. Our simulations have also revealed, in contrast to the monotonous rise in surface roughness observed in single-layer films grown on flat substrates, the surface growth of a multilayer film consists of two processes: interface smoothing and roughening, namely the film roughness decreases during the growth of amorphous thin layers but increases monotonously during the growth of crystalline thin layers. The observed interface smoothing and roughening can be obviously influenced by the change in the thickness ratio between amorphous and crystalline layers. The rise in thickness ratio between amorphous and crystalline layers enhances the interface smoothing effect but lowers the interface roughening effect and consequently shows a marked smoothing effect on the surface roughness.     

Effect of Co layer thickness on structural and magnetic properties of C/Co/C films

Granular C/Co/C films have been prepared by magnetron sputtering from C and Co onto glass substrates at room temperature and subsequent in situ annealing. It has been found that the structure and magnetic properties of the C/Co/C films depend strongly on the Co layer thickness. Vibrating sample magnetometer measurements indicate that the in-plane coercivities reach maximum in 20 nm Co thickness of both as-deposited and annealed films. The squareness ratio of annealed films was more than 0.8. X-ray diffraction shows that majority Co nanograins are formed as the hexagonal-close-packed (HCP) structure in 20 nm Co thickness with annealing at 400 °C. Scanning probe microscope was used to scan surface morphology and magnetic domain structures. The values of the surface roughness were lower than 0.6 nm in all annealed samples. The average magnetic cluster size was estimated to be about 10 nm in annealed 20 nm Co thickness films.