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1.
Spin pumping at the Co2FeAl0.5Si0.5/Pt and Pt/Co2FeAl0.5Si0.5 interfaces has been studied by ferromagnetic resonance technology(FMR). The spin mixing conductance of the Co2FeAl0.5Si0.5/Pt and Pt/Co2FeAl0.5Si0.5 interfaces was determined to be 3.7×1019m 2and 2.1×1019m 2 by comparing the Gilbert damping in a Co2FeAl0.5Si0.5single film, Co2FeAl0.5Si0.5/Pt bilayer film and a Pt/Co2FeAl0.5Si0.5/Pt trilayer film. Spin pumping is more efficient in the Co2FeAl0.5Si0.5/Pt bilayer film than in permalloy/Pt bilayer film.  相似文献   

2.
Spin pumping at the Co2FeAlo.sSio.5/Pt and Pt/Co2FeAIo.sSio.5 interfaces has been studied by ferromagnetic res- onance technology (FMR). The spin mixing conductance of the Co, FeA~o.sSio.s/Pt and Pt/Co2FeAlo.sSio.5 interfaces was determined to be 3.7~ lO19 m-2 and 2.1 ~ lO19 m 2 by comparing the Gilbert damping in a Co2FeAIo.sSio.5 sin- gle film, Co2FeAlo.sSio.s/Pt bilayer film and a Pt/Co2FeAIo.sSio.s/Pt trilayer film. Spin pumping is more efficient in the Co2FeAlosSios/Pt bilayer film than in permalloy/Pt bilayer film.  相似文献   

3.
Co2FeAl0.5Si0.5 (CFAS)-based multilayers sandwiched by MgO layers have been deposited and annealed at different temperatures. Perpendicular magnetic anisotropy (PMA) with the magnetic anisotropy energy density Ku ≈2.5×106 erg/cm3 (1 erg = 10-7 J) and the coercivity Hc = 363 Oe (1 Oe = 79.9775 A · m-1) has been achieved in the Si/SiO2/MgO (1.5 nm)/CFAS (2.5 nm)/MgO (0.8 nm)/Pt (5 nm) film annealed at 300 ℃. The strong PMA is mainly due to the top MgO layer. The structure can be used as top magnetic electrodes in half-metallic perpendicular magnetic tunnel junctions.  相似文献   

4.
We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlOx/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlOx and ZrOx layers are mixed together, indicating that compact AlOx layer cannot be formed in such a bilayer structure of barriers. The Eli results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlOx/Co.  相似文献   

5.
刘海龙  刘艳  汪涛  敖志敏 《中国物理 B》2014,23(2):26802-026802
The AA-stacked bilayer graphene/α-SiO2 (001) interfaces with Si terminated atoms are studied in the presence of an electric field F with different intensities by first principles. AA-stacked bilayer graphene is slightly mis-oriented on SiO2 substrate without electric field and the band gap is 0.557 eV. However, as F increases, the AA-stacked bilayer graphene has its layers gradually vertically shifted with each other and, finally, transfers into AB-stacked bilayer graphene and the band gap reduces to 0.252 eV under 0.015 Hartree.  相似文献   

6.
李晓其  徐晓光  王圣  吴勇  张德林  苗军  姜勇 《中国物理 B》2012,21(10):107307-107307
Microstructures and magnetic properties of Ta/Pt/Co 2 FeAl(CFA)/MgO multilayers are studied to understand perpendicular magnetic anisotropy(PMA) of half-metallic full-Heusler alloy films.PMA is realized in a 2.5-nm CFA film with B2-ordered structure observed by a high resolution transmission electron microscope.It is demonstrated that a high quality interface between the ferromagnetic layer and oxide layer is not essential for PMA.The conversions between in-plane anisotropy and PMA are investigated to study the dependence of magnetic moment on temperature.At the intersection points,the decreasing slope of the saturation magnetization(M s) changes because of the conversions.The dependence of M s on the annealing temperature and MgO thickness is also studied.  相似文献   

7.
Microstructures and magnetic properties of Ta/Pt/Co 2 FeAl(CFA)/MgO multilayers are studied to understand perpendicular magnetic anisotropy(PMA) of half-metallic full-Heusler alloy films.PMA is realized in a 2.5-nm CFA film with B2-ordered structure observed by a high resolution transmission electron microscope.It is demonstrated that a high quality interface between the ferromagnetic layer and oxide layer is not essential for PMA.The conversions between in-plane anisotropy and PMA are investigated to study the dependence of magnetic moment on temperature.At the intersection points,the decreasing slope of the saturation magnetization(M s) changes because of the conversions.The dependence of M s on the annealing temperature and MgO thickness is also studied.  相似文献   

8.
The as-deposited and annealed Ge-Au film and Ge-Au/Au bilayer films have been observed by transmission electron microscopy. The bilayer with a composition of Ge-5at%Au film is amorphous, while the Ge-22at%Au film is polycrystalline. Higher concentration of Au raises the structural heterogeneity and instability. Fractals can be observed in the Ge-5at%Au/Au bilayer samples annealed at 60-100℃. The difference of the fractal patterns generated from Ge-Au/An and a-Ge/Au films call be attributed to the higher heterogeneity and instability in Ge-Au/An bilayers.  相似文献   

9.
The boron-oxygen-nitrogen(BON) films have been grown on Si wafer by the low-frequency rf-plasma-enhanced metal-organic chemical vapour deposition method.The homogeneous film structure of completely amorphous BON is first fabricated on a low-temperature-made buffer at 500℃ with N2 plasma and is observed with a highresolution-electron microscope by the transmission-electron diffraction.The results show that the interfaces among substrate/buffer/film are clear and straight in the structured film.A heterogeneous film containing nano-sized crystalline particles is also grown by a routine growth procedure as a referential structure,The C-V characteristic is measured on both the amprphous and crystal-containing films by using the metal-oxidesemiconductor structure,The dielectric constants of the films are,therefore,deduced to be 5.9 and 10.5 for the amorphous and crystal-containing films,respectively,The C-V results also indicate that more trapped charges exist in the amorphous film.The binding energy of the B,O.and N atoms in the amprphous film is higher than that in the crystal-containing one,and the N-content in the latter is found to be higher than that in the former by x-ray photo-electron spectroscopy.The different electrical Property of the films is thought to originate from the energy state of the covalent electrons.  相似文献   

10.
王力  苏仰涛  孟洋  石海滨  曹昕宇  赵宏武 《中国物理 B》2022,31(2):27504-027504
We investigate the spin to charge conversion phenomena in Y3Fe5O12/Pt/Co1-xTbx/Pt multilayers by both the spin pumping and spin Seebeck effects.We find that the spin transport efficiency is irrelevant to magnetization states of the perpendicular magnetized Co;Tb;films,which can be attributed to the symmetry requirement of the inverse transverse spin Hall effect.Furthermore,the spin transmission efficiency is significantly affected by the film concentration,revealing the dominant role of extrinsic impurity scattering caused by Tb impurity.The present results provide further guidance for enhancing the spin transport efficiency and developing spintronic devices.  相似文献   

11.
Polycrystalline perovskite cobalt oxide Eu0.5Sr0.5CoO3 was prepared by the conventional solid-state reaction method. X-ray powder patterns indicated the prepared samples are pure, cubic perovskite structure (Pm3?m), and with no evidence of any secondary phases. The dc magnetization and ac susceptibility measurements were carried out to investigate the magnetic properties of the sample, and which indicated that cluster-glasses properties are suppressed with the increasing of the coercive field. We denied the possibility of spin-glasses and the existence of the Hopkinson effect in Eu0.5Sr0.5CoO3 through the temperature-dependent ac susceptibility measurements, and explained the magnetic behavior of Eu0.5Sr0.5CoO3 with the competition between magnetic anisotropy and the external magnetic field.  相似文献   

12.
We present in this paper the experimental results of photoluminescence spectra of Ba0.5Sr0.5TiO3 ceramics. An emission band centered at about 920 nm has been observed at room temperature. When we change the amount of oxygen vacancies in these samples by thermal treatment, these samples show an enhancement of luminescence. Our experimental results indicate that the origin of the photoluminescence is related to the oxygen vacancies in these samples.  相似文献   

13.
A series of Pr0.5Sr0.5MnO3 (PSMO) films with various thickness were epitaxially grown on substrates of (0 0 1)-oriented (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (LSAT), LaAlO3 (LAO) and SrTiO3 (STO), and (0 1 1)-oriented STO using pulse laser deposition. Influence of epitaxial growth on phase competition was investigated. A ferromagnetic metal to antiferromagnetic insulator (FMM-AFI) transition upon cooling is present in both largely compressed situations deposited on LAO (0 0 1) and tensile cases deposited on STO (0 0 1) but absent in little strained films grown on LSAT (0 0 1), indicating that the antiferromagnetic insulating state is favored by strains. On the other hand, the 400 nm films deposited on (0 1 1)-oriented STO as well as LAO substrates show FMM-AFI transition. These results reveal that both the orientation of epitaxial growth and substrate-induced strain affect the FMM-AFI transition.  相似文献   

14.
NbTi0.5Ni0.5O4 (NTNO) has been prepared using solid state synthesis and investigated as a potential anode material. The oxide form of NTNO has single phase rutile-type structure with tetragonal (P42/mnm) space group. The reduced form is a composite of nano-scaled particles of metallic Ni and Nb1.33Ti0.67O4 phase. Reduced NTNO showed high electronic conductivity up to 280 S.cm− 1 at 900 °C in reducing atmosphere, but suffers from low CTE equal to 3.78 10− 6 K− 1. Studies of NTNO as anode material were carried out in a three electrode - electrochemical half cell configuration under pure humidified H2 at 900 °C using a 2 mm thick zirconia electrolyte and without any additional current collector material. The results show a reasonable series resistance (Rs) equal to 2.7 Ωcm2 (about 50% higher than for metallic gold layers) indicating a good current collection performance for a 10 μm layer of material. The polarization resistance (Rp) was equal to 33 Ωcm2 and is attributed to a poor density of three phase boundaries (TPB) and shortage of oxide ion conduction in the anode layer. The results show the potential of NTNO as an anode material, especially after optimization of the microstructure towards the increase of TPB length.  相似文献   

15.
马玉彬 《物理学报》2009,58(7):4976-4979
研究了氧空位对La0.5Ca0.5MnO3 (LCMO)多晶块材的电输运和磁性质的影响. 随着氧空位的增加, 样品在高温段的电阻率一直增加, 并满足绝热小极化子模型, 而低温段的电阻率先下降后上升, 并出现明显的dR/dT>0的行为, 直至最后变为绝缘的. 氧空位的增加抑止了反铁磁相的出现, 使得脱氧的LCMO样品不发生反铁磁转变, 进一步增加氧空位则会抑制铁磁相. 关键词: 0.5Ca0.5MnO3')" href="#">La0.5Ca0.5MnO3 反铁磁相变 铁磁相变 脱氧  相似文献   

16.
赵静波  杜红亮  屈绍波  张红梅  徐卓 《物理学报》2011,60(10):107701-107701
研究了在铌酸钾钠基陶瓷中,A位等价与非等价取代对陶瓷极化温度和极化电场的影响,结果表明:A位等价取代的陶瓷对极化温度和极化电场没有强烈依赖性,可以使极化足够充分,能有效提高铌酸钾钠基陶瓷的压电性能;相反,A位非等价取代的陶瓷对极化温度和极化电场敏感,容易击穿,极化不充分,限制了铌酸钾钠基陶瓷的压电性能. 关键词: 铌酸钾钠 极化 压电  相似文献   

17.
Layered LiNi0.5Mn0.5O2 has been successfully synthesized via urea hydrolysis coprecipitation method. Well-crystallized LiNi0.5Mn0.5O2 was obtained after calcinations of coprecipitation precursors and lithium salts at 450 °C for 3 h and following 900 °C for 10 h in air. Both the precursors and LiNi0.5Mn0.5O2 powders show an agglomerated secondary structure with crystalline particles inside. The quasi-spherical morphology of the precursors was maintained during the calcinations. The first charge and discharge capacities of as-prepared LiNi0.5Mn0.5O2 were 200 and 165mAh/g respectively. The discharge capacity of about 160mAh/g was retained after 10cycles for as-prepared samples.  相似文献   

18.
A theoretical study on Sb-doped SnO2 has been carried out by means of periodic density functional theory (DFT) at generalized gradient approximation (GGA) level. Stability and conductivity analyses were performed based on the formation energy and electronic structures. The results show that Sn0.5Sb0.5O2 solid solution is stable because the formation energy of Sn0.5Sb0.5O2 is −0.06 eV. The calculated energy band structure and density of states showed that the band gap of SnO2 narrowed due to the presence of the Sb impurity energy levels in the bottom of the conduction band, namely there is Sb 5s distribution of electronic states from the Fermi level to the bottom of conduction band after the doping of antimony. The studies provide a theoretical basis to the development and application of Sn1−xSbxO2 solid solution electrode.  相似文献   

19.
Nanocrystalline Zn0.5Mn0.5Fe2O4 was synthesized through the pyrolysis of polyacrylate salt precursors prepared via in situ polymerization of the metal salts and acrylic acid. The pyrolysis behavior of the polymeric precursors was studied by use of thermal analysis. The as-obtained product was characterized by powder X-ray diffraction (XRD), transmission electron microscope (TEM), electron diffraction (ED) pattern, scanning electron microscopy (SEM) and electron dispersive X-ray (EDX) analysis. The results revealed that the particle size is in the range of 15–25 nm for Zn-Mn ferrites with good crystallinity. Magnetic properties of the sample at 300 K were measured using a vibrating sample magnetometer, which showed that the sample exhibited characteristics of superparamagnetism.  相似文献   

20.
The [TMA]2Zn0.5Cu0.5Cl4 hybrid material was prepared and its dielectric spectra were measured in the 10−1 Hz-106 Hz frequency range and 200-305 K temperature interval. The dielectric permittivity showed a ferroelectric-paraelectric phase transition at 293 K. Double relaxation peaks are observed in the imaginary part of the electrical modulus, suggesting the presence of grain and grain boundary in the sample. The frequency dependent conductivity was interpreted in term of Jonscher's law: σ(ω)=σdc+n. The temperature dependent of the dc conductivity (σdc) was well described by the Arrhenius equation: σdcT=σo×exp(−Ea/kT).  相似文献   

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