陶瓷表面放电光泵浦源放电特性研究

为了提高表面放电光泵浦源的寿命,以Al_2O_3陶瓷作为放电基板,研制了分段表面放电光泵浦源。基于放电电压和电流波形,详细研究了泵浦源的放电周期,放电通道电阻,能量沉积效率和等离子体功率密度。发现泵浦源的放电周期、放电通道电阻和能量沉积效率均随放电间隙长度和混合气体气压的增大而变大,随充电电压的增加而减小;而等离子体功率密度主要取决于充电电压和放电间隙长度,基本不随混合气体气压的改变而变化。在充电电压为26. 8 kV,气压为100 kPa,放电间隙长8 cm的条件下,泵浦源的能量沉积效率约为82%,等离子体功率密度达到了9. 36 MW/cm。实验研究表明:Al_2O_3陶瓷表面放电光泵浦源具有良好的放电特性,较同等条件下聚四氟乙烯表面放电光泵浦源的等离子体功率密度更高,可产生更强的真空紫外辐射,辐射亮度温度大于23 kK。Al_2O_3陶瓷表面放电光泵浦源适用于光泵浦XeF_2气体形成大功率XeF(C-A)蓝绿激光。     

等离子体电极普克尔盒电光开关单脉冲过程数值模拟

采用流体模型对等离子体电极普克尔盒(PEPC)电光开关单脉冲过程进行了数值模拟分析.模型包括带电粒子连续性方程、动量守恒方程、电子平均能量方程及空间电位泊松方程.分别采用隐式指数差分格式，超松弛迭代法(SOR)和经典四阶龙格-库塔法(R-K)对带电粒子连续性方程，泊松方程和电子平均能量方程进行数值求解.模拟分析了PEPC单脉冲过程中的带电粒子浓度、电子温度、空间电场、PEPC的放电电流、晶体两侧电压和开关效率的时间演化特性.模型得出了PEPC中气体放电等离子体的微观物理过程与PEPC宏观参量的关系，对设计 关键词： 等离子体电极普克尔盒 电光开关 数值模拟 气体放电     

高压氮气亚纳秒开关放电特性实验研究

 利用幅值约220 kV、脉宽约4 ns的高压纳秒脉冲源，对高压氮气亚纳秒气体开关放电特性进行了实验研究。实验结果表明：当气压在3~10 MPa间变化，间隔距离在0.6~1.2 mm间变化时，氮气间隙击穿电压随气压和间隙距离的增大而增大，并随气压的增大略呈饱和趋势,最高击穿电场约为2 MV/cm。开关输出电压波形的上升时间变化范围为145~190 ps，该上升时间随气压、击穿电场以及间隙距离增大而减小。     

280mm×280mm口径单脉冲过程电光开关

用于高功率惯性约束聚变(ICF)激光驱动器的大口径电光开关均采用等离子体电极泡克耳斯盒。与传统的等离子体电极电光开关原理不同,单脉冲过程驱动电光开关没有独立的大电流等离子体发生单元,而只是通过具有较高幅值的正负开关脉冲完成对大口径电光开关的驱动。介绍单脉冲过程驱动等离子体电极泡克耳斯盒电光开关的设计,并建立280 mm×280 mm口径电光开关实验平台,利用连续激光器测试了电光开关特性,实验测得该电光开关中心处开关效率为99.3%,开关上升时间为90 ns。     

外粒子源注入下气体放电过程的模拟研究

利用Geant4程序建立外源注入式、低气压气体开关物理模型,通过模拟计算电子增益与极板间电场强度、电子增益与极板间隙距离的函数关系验证了模型的正确性。计算了气体种类、气体压强对电子增益的影响,分析得到形成自持放电所需最小入射电子数,计算结果表明:在相同的气压及电场条件下,氮气的电子增益远大于氦气,这与氦气的高电离能性质相吻合; 随气压增大,电子增益呈非线性增长; 为实现自持放电,外源注入电子数面密度为1×105~2×105 /cm2。     

微小碎片加速器同轴枪内等离子体轴向速度研究

等离子体驱动微小碎片加速器是地面模拟空间微小碎片超高速撞击实验的装置, 决定其加速效果的是加速器同轴枪内等离子体轴向速度. 采用发射光谱法研究等离子体轴向速度随放电电压和工作气体压强的变化关系. 实验结果揭示:轴向速度随着放电电压的增大线性增加,随工作气压的增大而缓慢减小, 与数值模拟结果符合.为进一步提高等离子体轴向速度,优化加速器提供了可靠依据.     

气体脉冲放电等离子体阻抗的参量研究

在纯净氦气条件下，对高频纵向脉冲放电的等离子体动态阻抗进行了实验研究.测量了放电等离子体阻抗随放电电压、频率以及气体压强之间的变化关系，表明等离子体阻抗随频率和电压的增加而下降，随气压的升高而增大.定性分析了这些宏观参量与等离子体阻抗变化之间的关系，拟合出等离子体阻抗随电压、频率、气压变化的经验公式，并对数值模拟与实验结果进行了比较研究. 关键词： 等离子体阻抗 气体脉冲放电     

辉光放电触发赝火花开关的时延及抖动特性

 设计了一种辉光放电触发赝火花开关,对其时延和抖动特性进行系统研究。研究了开关时延、抖动与辉光放电电流、气压、触发电压及阳极电压的关系。当辉光放电电流小于0.30 mA时,开关无法触发导通;当电流为0.35~0.60 mA时,随辉光放电电流的增大,开关时延、抖动减小;当辉光放电电流为0.60 mA时,开关时延、抖动基本不变,出现饱和。当氦气气压低于6 Pa,开关难以触通,与理论计算值6.95 Pa吻合;当氦气气压为6~12 Pa时,开关的时延、抖动随气压的升高而减小;气压为12~30 Pa时,开关工作在比较稳定的状态。当触发电压小于3 kV,开关难以触通;随着触发电压的增大,开关时延、抖动减小;当触发电压大于5.3 kV,开关时延、抖动基本保持不变。开关在稳定工作条件下,阳极电压在8~25 kV范围内变化时;开关时延基本不变。     

大功率脉冲TEA CO2激光器配气比对输出的影响

大功率脉冲TEA CO2激光器的放电腔在不同工作气压和不同配气比例条件下对激光器输出能量和电光转换效率均有较大影响,因此,通过充气压力从30kPa到60kPa的改变和配气比例CO₂:N₂＝1:1到CO2:N2＝1:4的变化,可以改变激光器的输出能量,提高激光器电光转换效率。实验结果表明：当CO2:N2的配气比例为1:3时,激光器输出的电光转换效率存在最佳点。在最佳配气比例CO2:N2:He＝3:9:28,总气压40kPa和注入激励电能保持不变的情况下,激光器单脉冲放电时的输出能量为24.6J;激光器高重复频率放电运转时的电光转换效率达16.4％。激光器的最高放电频率可以达到500Hz并且连续稳定运行工作。     

等离子体电极电光开关大面积辉光放电的产生及其特性

 在电光开关的晶体两侧，用辉光放电产生的高电导率透明等离子体作为施加开关脉冲电压的电极，可大大增加开关的通光口径。利用设计建造的一个80mm×80mm口径的等离子体电极电光开关，研究了用于电光开关中的大面积辉光放电的产生方法及放电特性。描述了等离子体电极普克尔盒的结构、放电室和电极的几何尺寸、放电电路及其参数，实验观测了预电离和工作气压对放电的影响。     

电极构形对形成大面积放电均匀性影响

 设计并制作了空心阴极、钮扣阴极、针阴极和条形阴极，利用CCD照相，在5cm×5cm口径范围内，分别对四种阴极放电的空间均匀性进行了研究。实验表明，在预电离电压800V，主放电电压3kV和气体气压约30Pa的条件下，利用空心阴极放电，能够获得空间较为均匀的放电等离子体。放电等离子体可以用作普克尔盒电光开关的等离子体电极。     

Analysis on skin-effect of a polymer shielded push–pull directional coupler electro-optic switch

By using the extended point-matching method, coupled mode theory, and electro-optic modulation theory, design and optimization are carried out for a polymer shielded push–pull directional coupler electro-optic switch. A novel technique and the relative formulas are presented for analyzing the influences of the skin-effect on the microwave characteristic parameters and the switching performances. Simulation results show that the voltages of the cross- and bar-states are 0 and ±2.93 V, respectively, and the coupling length is 4.139 mm. Considering the influences of the skin-effect, the cutoff switching frequency is 172 GHz, the insertion loss is in the range of 1.920–1.975 dB, the crosstalk is less than ?20 dB, and the switching time is 31.18–31.40 ps within the range of the switching frequency from 0.72 to 172 GHz. The designed switch exhibits superior characteristics including good impedance match, low switching voltage, and high cutoff switching frequency.     

单脉冲电光开关击穿时间延迟及抖动的减小方法

减小单脉冲等离子体电极普克尔盒电光开关击穿时间延迟与抖动问题是提高大口径电光开关性能的关键。利用紫外线照射在阴极上的外光电效应,使阴极产生次级电子发射,形成稳定的初始电子流,在高压脉冲作用下普克尔盒内的初始电子产生快速繁流放电,使盒内氦气击穿。实验证明该方法可以减小开关的击穿时间延迟及抖动,使击穿时间延迟平均下降了36%,平均抖动时间下降88%。     

Nanosecond Bias-Free Mach–Zehnder Electro-Optic Switch Based on Dye-Doped Polymer DR1/SU-8 and Microstrip Line Electrode

Abstract

A bias-free Mach–Zehnder interferometer electro-optic switch is demonstrated with a dye-doped polymer Disperse Red 1 (Tokyo Chemical Industry, Co., LTD, Tokyo, Japan)/SU-8 (MicroChem Corp., Newton, Massachusetts, USA) and microstrip line electrode. The device is carefully designed and optimized for bias-free function and high-speed switching using the three-dimensional beam-propagation method and extended point-matching method, and the switch is seriously fabricated by a wet-etching technique and inductively coupled plasma etching technique for good control of dimension parameters. The measured rise time and fall time at 1,550 nm are both at the level of ~10 ns. Owing to the bias-free function and nanosecond response speed, this switch exhibits potential applications of high-speed optical routing and exchanging.     

Polymeric Multimode Interference Mach–Zehnder Interferometer Electro-Optic Switch Using Embedded Coplanar Waveguide Electrode: Theory,Design, and Analysis

Abstract

The self-imaging theory is improved for designing a polymer multimode interference Mach–Zehnder interferometer electro-optic switch. The electro-optic overlap factor is enhanced from 0.6510 to 0.9658 through adopting an embedded coplanar waveguide electrode. Considering the mode dispersion effect, formulations of time-domain response are derived, and switching characteristics are analyzed. The total device length is about 7.175 mm, the switching voltage is 2.622 V, and the switching time is 29.90 ps. The lightwave 3-dB bandwidth is 20 nm, the insertion loss is less than 2.70 dB, and the crosstalk under cross and bar states are less than ?55 dB and ?45 dB, respectively.     

Optical characteristics of transparent PMNT ceramic and its application at high speed electro-optic switch

The optical characteristics of transparent lead magnesium niobate titanate (PMNT) electro-optic ceramic, including the electro-optic phase modulation, electric hysteresis property and thermo-optic coefficient, are investigated in detail. Based on this novel ceramic, a polarization independent electro-optic switch by using fiber Sagnac interferometer (FSI) structure is realized. An initial π-shift is introduced into the Sagnac loop to eliminate the effect of the polarization orientation of the incident light on the switch performance. Then an electrically controllable PMNT phase retarder is used to switch the optical signal between the reflection and transmission ports. Some theoretical analyses are given and the switch performances are also discussed, including the thermal characteristic and different switching frequency response.     

反相电极聚合物定向耦合电光开关的优化设计

为了消除单节电极定向耦合电光开关的工艺误差对器件性能的不良影响,应用耦合模理论、电光调制理论、保角变换及镜像法,优化设计了一种两节交替反相电极聚合物定向耦合电光开关.模拟结果表明,该器件具有良好的开关性能:在1 550 nm的工作波长下,器件耦合区的长度为4 753.5 μm,交叉态电压为1.22 V,直通态电压为2.65 V,插入损耗小于2.21 dB,串扰小于-30 dB.通过微调状态电压,可以很容易地消除工艺误差对器件性能产生的不良影响.本文方法的设计结果与光束传播法的仿真结果符合得很好.     

Electro-optic polymer assisted optical switch based on silicon slot structure

One kind of electro-optic polymer assisted Mach-Zehnder optical switch based on silicon slot structure is presented in this paper. The interference arms of the switch are slot structures instead of regular single-mode waveguides. By filling electro-optic material in the void slot of the arms, direct electro-optic modulation can be introduced. Theoretical model and detailed analysis are given in this paper. The length-independent product V_πL is about 74 mV cm when slot width is 100 nm, and 37 mV cm when slot width is 50 nm, when the polymer with a electro-optical coefficient of γ₃₃ = 130 pm/V is assisted. An ultralow energy consumption of only 37 fJ/bit is achievable, and the turn-on time of the switch is less than 1.5 ps.     

High-speed compact silicon digital optical switch with slot structure

A high-speed compact silicon digital optical switch (DOS) is proposed in this paper. The direct electro-optic effect is applied by filling electro-optic polymer in the void slot of the branches, which compensates the limitation of silicon itself. The crosstalk of about 35 dB and the insertion loss of 0.7 dB is obtained, the switching speed is less than 1 ps, and the whole device length can be shortened to 616 μm even using the basic mode-evolving principle and a simple Y-type structure. Analysis also shows that the device has good fabrication tolerance and wavelength independence over the C-band.