共查询到20条相似文献,搜索用时 250 毫秒
1.
在CdTe太阳电池中,易引入并形成Cu深能级中心. 本文采用深能级瞬态谱测试法研究了ZnTe背接触和石墨背接触CdTe太阳电池的部分深能级中心. 研究中运用密度泛函相关理论,分析闪锌矿结构CdTe,Cd空位体系和掺Cu体系的电子态密度,计算得出Td场和C3v场下Cu2+ d轨道的分裂情况. 计算结果表明,CdTe太阳电池中的Ev+0206 eV和Ev+0122 eV两个深中心来源于Cu替代Cd原子. 计算结果还表明,掺入Cu可降低CdTe体系能量.
关键词:
深能级瞬态谱
第一性原理
CdTe
Cu杂质 相似文献
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用深能级瞬态谱和光致发光研究了无背接触层的CdS/CdTe薄膜太阳电池的杂质分布和深能级中心.得到了净掺杂浓度在器件中的分布.确定了两个能级位置分别在EV+0365 eV和EV+0282 eV的深中心,它们的浓度分别为167×1012 cm-3和386×1011 cm-2,俘获截面分别为143×10-14cm2和153×10-16cm2.它们来源于以化学杂质形式存在的Au和(或)TeCd-复合体,或与氩氧气氛下沉积CdTe时的氧原子相关.
关键词:
深能级瞬态谱
光致发光
CdS/CdTe太阳电池 相似文献
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为得到绿光和红光最大发光强度的Er3+/Yb3+共掺BaGd2ZnO5上转换材料荧光粉, 首先采用试验优化设计中的均匀设计初步寻找Er3+/Yb3+合理的掺杂浓度; 其次通过二次通用旋转组合设计进一步优化实验, 建立起Er3+/Yb3+掺杂浓度与绿光和红光发光强度的回归方程; 最后通过遗传算法计算出方程的最优解, 即绿光和红光最大发光强度时对应的Er3+/Yb3+掺杂浓度. 利用传统的高温固相法分别制备出最优样品. 采用X 射线衍射对得到荧光粉的晶体结构进行了分析, 证明了所有产物均为纯相BaGd2ZnO5. 采用980 nm抽运激光作为激发源, 在同样的条件下测量了样品的上转换荧光发射光谱, 从中可见样品有较强的红光发射和绿光发射, 发光中心位于662, 551和527 nm, 分别对应于4F9/2→4I15/2, 4S3/2→4I15/2 及2H11/2→4I15/2能级跃迁. 研究了绿光和红光最优样品的上转换发光强度与激光器工作电流之间的关系, 通过分析发现红色和绿色上转换发光均为双光子过程. 由归一化的绿色上转换发射光谱可以看出, 激光器工作电流导致的样品温度变化可以忽略不计. 由于能级2H11/2和4S3/2之间存在热平衡, 并满足玻尔兹曼分布, 由此探讨了绿光最优样品上转换发射光谱中的绿色发射与温度的关系, 计算出2H11/2和4S3/2之间的能级差为ΔE=926.11 cm-1. 研究了绿光最优样品的温度效应, 随着温度的升高, 发射强度逐渐变小, 出现了温度猝灭现象. 并计算了样品的激活能, 分别为总体激活能ΔE总=0.45 eV, 绿光激活能ΔE绿=0.45 eV, 红光激活能ΔE红=0.46 eV. 相似文献
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通过显微光致发光技术和显微拉曼(Raman)技术研究了半绝缘GaAs (SI-GaAs)晶体的带边附近的发光. 在光荧光谱中,观察到在高于GaAs带边0.348eV处有一个新的荧光峰. 结合Raman谱指认此发光峰来源于GaAs的E0+Δ0能级的非平衡荧光发射. 同时, 通过研究E0+Δ0能级的偏振、激发光强度依赖关系,以及温度依赖关系说明E0+Δ0能级与带边E0共享了共同的导带位置Γ6,同时这也说明在GaAs中主要是导带的性质决定了材料的光学行为.同时,通过与n-GaAs和δ掺杂GaAs相比较,半绝缘GaAs晶体的E0+Δ0能级的发光峰更能反映GaAs电子能级高临界点E0+Δ0的能量位置和物理性质. 研究结果说明显微光致发光技术是研究半导体材料带边以上能级光学性质的一种非常有力的研究工具.
关键词:
半绝缘GaAs
显微光致发光
自旋轨道分裂 相似文献
5.
利用深能级瞬态谱(DLTS)、傅里叶变换红外光谱(FT-IR)对GaN以及GaN掺Er/Pr的样品进行了 电学和光学特性分析.研究发现未掺杂的GaN样品只在导带下0.270eV处有一个深能级;GaN注 入Er经900℃,30min退火后的样品出现了四个深能级,能级位置位于导带下0.300 eV,0.188 eV,0.600 eV 和0.410 eV;GaN注入Pr经1050℃,30min退火后的样品同样出现了四个深能级 ,能级位置位于导带下0.280 eV,0.190 eV,0.610 eV 和0.390 eV;对每一个深能级的来源 进行了讨论.光谱研究表明,掺Er的GaN样品经900℃,30min退火后,可以观察到Er的1538nm 处的发光,而且对能量输运和发光过程进行了讨论.
关键词:
GaN
Er
Pr
深能级 相似文献
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利用变频导纳谱研究了γ辐照前后Hg1-xCdxTe(x=0.6)n+-on-p结中的深能级缺陷.辐照前其缺陷能级位置在价带上0.15 eV,俘获截面σp=2.9×10-18cm2,缺陷密度Nt=6.5×1015cm-3,初步认为是Hg空位或与其相关的复合缺陷;经过104Gy的γ辐照后其能级变得更深,在价带上0.19 eV,同时其俘获截面增加了近一个数量级,而缺陷密度基本上没有变化.γ辐照引入的这种能级变化最终使器件的性能(探测率)下降了1/2以上.
关键词: 相似文献
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两种非晶锂离子导体B2O3-0.7Li2O-0.7LiCl-xAl2O3-0.1V2O5(x=0.05和0.15)的电子自旋共振谱研究表明:(i)ESR线型是高斯型,证实V2O5添加量适当;(ii)超精细结构来源于VO2+络离子,具有四角对称性,属C4v群。越精细耦合张量的平行分量平均值A//=0.0175cm-1,垂直分量A⊥=0.0063cm-1。由g//(g⊥)求出其基态2B2g与第一激发态2Eg的能级间距△1=2.46×104 cm-1,基态与第二激发态2B1g的能级间距△2=3.03×104 cm-1;(iii)变温实验证实:Al2O3组分较少(x=0.05)的非晶ESR强度比x=0.15的非晶高3倍至2倍,而Al2O3组分越多则ESR强度随温升下降越小。 相似文献
9.
室温下我们研究了稀磁半导体(Ga,Mn)As的光调制反射(PR)光谱,观测到来自样品的Franz-Keldysh振荡(FKO)信号。随着Mn原子浓度的增加,PR线形展宽,但是临界点E0和E0+Δ0没有明显的移动。根据FKO振荡数据,计算得到样品表面电场强度随Mn原子掺杂浓度的增加而增强。测量到与Mn原子掺杂相关的杂质带,其能量位置离GaAs价带边~100 meV。根据样品的表面电场强度和表面耗尽层模型,估算样品的空穴浓度为~1017cm-3,较低的空穴浓度可能与样品具有较低的居里温度有关,或测量的PR信号来自于样品中外延层的部分耗尽区域。 相似文献
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ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition (MOCVD) at different total gas flow rates. The current versus voltage and temperature (I - V - T) characteristics, the deep-level transient spectroscopy (DLTS) and the photoluminescence (PL) spectra of the samples were measured. DLTS shows two deep-level centres of E1 (Ec-0.13±0.02eV) and E2 (Ec-0.43±0.05eV) in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed. 相似文献
12.
采用溶胶-凝胶法在玻璃衬底上制备了过渡金属元素与F共掺杂Zn0.98-xTMxF0.02O (TMx=Cu0.02, Ni0.01, Mn0.05, Fe0.02, Co0.05)薄膜, 进而利用X射线衍射仪、扫描电子显微镜、紫外-可见透过谱、光致发光及振动样品磁强计等研究了薄膜的表面形貌、微结构、禁带宽度及光致发光(PL)和室温磁学特性. 研究表明: 掺杂离子都以替位的方式进入了ZnO晶格, 掺杂不会破坏ZnO的纤锌矿结构. 其中Zn0.93Co0.05F0.02O薄膜样品的颗粒尺寸最大, 薄膜的结晶度最好且c轴择优取向明显; Zn0.93Mn0.05F0.02O薄膜样品的颗粒尺寸最小, 薄膜结晶度最差且无明显的c轴择优取; Cu, Ni, Fe与F共掺杂样品的颗粒尺寸大小几乎相同. TM掺杂样品均表现出很高的透过率, 同时掺杂后的薄膜样品的禁带宽度都有不同程度的红移. PL谱观察到Zn0.98-xTMxF0.02O薄膜的发射峰主要由较强的紫外发射峰和较弱的蓝光发射峰组成. Zn0.93Mn0.05F0.02O薄膜样品的紫外发光峰最弱, 蓝光发射最强, 饱和磁化强度最大; 与之相反的是Zn0.96Cu0.02F0.02O薄膜, 其紫外发光峰最强, 蓝光发射最弱, 饱和磁化强度最小. 结合微结构和光学性质对Zn0.98-xTMxF0.02O薄膜的磁学性质进行了讨论. 相似文献
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The diffusion of W on a (211) plane of a W field emitter has been re-examined by means of the fluctuation autocorrelation method. Diffusion along channels yielded E = 16.8 ± 0.5 kcal, D0 = (3 ± 1) × 10−5 cm2 s−1. For diffusion across channels E =6.6 kcal, D0 = 4 × 10−9cm2 s−1 at T < 752 K, and E = 24 kcal, D0 = 5 × 10−4 cm2 s−1 at T > 752 K. The results for diffusion along channels yield E and D0 values intermediate between recent results by Wang and Ehrlich [Surf. Sci. 206 (1988) 451] using field ion microscopy (E = 19 kcal, D0 = 7.7 × 10−3 cm2 s−1) and Tringides and Gomer [J. Chem. Phys. 84 (1986) 4049], using the same method as the present work but a larger slit (E = 13.3 kcal, D0 = 7 × 10−7 cm2 s−1). The results for cross channel diffus good agreement with those of Tringides and Gomer below 752 K, where these authors stopped. The new high temperature results suggest that the channel wall exchange mechanism postulated by Tringides and Gomer for cross channel diffusion at low T gives way to diffusion by climbing over the channel walls with higher E but also higher D0 above 752 K. Possible reasons for the discrepancies between these three sets of results and the absence of cross channel diffusion in the work of Wang and Ehrlich are briefly discussed. 相似文献
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采用磁控共溅射技术制备了铒铥共掺杂氧化锌发光薄膜. 通过优化退火温度, 实现了薄膜的近红外 平坦宽带发射, 总带宽可达到~ 500 nm, 覆盖了光通信S+C+L+U 区波段. 此发射带由Er3+ 的1535 nm (4I13/2 → 4I15/2) 发射峰及Tm3+ 的1460 nm (3H4 → 3F4), 1640 nm (1G4 → 3F2), 1740 nm (3F4 → 3H6) 发射峰组成. 研究表明: 退火温度低于800 ℃ 时, 没有观察到薄膜样品明显的光致发光现象; 随着退火温度 从800 ℃ 升高到1000 ℃, I1640/I1535 发射峰强度比从0.2 升高到0.3, I1740/I1535 发射峰强度比从0.5 降低 到0.4, 发射峰强度比均基本保持稳定; 当退火温度高于1000 ℃ 时, I1640/I1535 发射峰强度比从0.3 升高到 0.6, I1740/I1535 发射峰强度比从0.4 升高到0.8, 发射峰强度比均急剧增加. 变温行为表明: 随着温度从10 K 逐渐升高到300 K, 谱线的总带宽基本不变, 在340—360 nm 之间; Tm3+ 在1640 和1740 nm 处的发射峰强度 分别降低了2/3 和1/2, Er3+ 在1535 nm 的发射峰强度增大了1.2 倍. 这是因为随着温度的升高, 声子数目增 多, Er3+ 与Tm3+ 离子之间发生能量传递的概率不断变大, 并且在Tm3+ 离子之间没有发生交叉弛豫现象. 相似文献
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The isothermal desorption of SiO from the Si(100) and Si(111) surfaces was investigated by means of optical second-harmonic generation (SHG). Due to the high adsorbate sensitivity of this method, desorption rates could be measured over a wide range from 10−1 to 10−6 ML s−1. From their temperature dependence between 780 and 1000 K, activation energies of EA=3.4±0.2 eV and EA=4.0±0.3 eV and pre-exponential factors of ν0=1016±1 s−1 and ν0=1020±1 s−1 for SiO desorption were obtained for Si(100) and Si(111), respectively. In the case of the Si(100) surface, a pronounced decrease of the first-order rate constants was observed upon increasing the initial coverage from 0.02 to 0.6 ML. The results are interpreted in terms of coverage-dependent oxygen-binding configurations, which influence the stability of the oxide layer. 相似文献
18.
利用溶胶-凝胶法在Si衬底上制备了不同退火温度的Cu:ZnO薄膜.利用X射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜和光致发光谱研究了样品的晶格结构、表面形貌、成分及其发光特性.结果表明:所有样品均具有高度的c轴择优取向,随着退火温度的升高,样品的结晶质量变好,样品的表面都被晶粒覆盖,强而稳定的绿光发射被观察到.绿光强度随退火温度的升高先增加后减小,发光中心位置不随退火温度的变化而改变,这样的绿光发射强而稳定.XRD和XPS结果表明,随退火温度的升高Cu2+还原为Cu+,导致Cu:ZnO薄膜形成的缺陷是VZn,所以绿光发射是由VZn引起的.Cu2+还原为Cu+时,Cu:ZnO薄膜中VZn浓度增加,使绿光发射强度增大.当退火温度超过800?C时,Cu2+的还原能力变差,绿光发射强度减弱. 相似文献
19.
Z. Ovadyahu 《Physica A》1993,200(1-4):462-468
The optical gap, Eg, of amorphous indium-oxide films is measured as a function of static disorder near the metal-insulator transition. On the insulating side of the transition the optical gap obeys a scaling relation, ΔEg = -E*Δg where E* is of the order of the Fermi energy of the given sample and g≡KFl. These results are ascribed to the continuous shift of the mobility-edge in the conduction band with disorder. 相似文献
20.
S. Kuwata 《Physica B: Condensed Matter》1997,240(4):322-329
Assuming that the energy of a 2D Wigner lattice, which has been frequently observed on the CuO2 plane in layered high-Tc cuprates, is composed of Coulomb energy, kinetic energy, and charge-transfer energy which is necessary to transfer electrons or holes onto the CuO2 plane (the magnitude of the energy is expected to be of the order of the work function of the compound constituting the plane from which the electrons are transferred, if the CuO2 plane easily accepts the electrons or holes, as if the CuO2 plane were crystal surface), we find in the mean-field approximation, that the total energy for a unit lattice, E0, can be given by a function of the charge-transfer energy Eφ as E0= (Eφ−Eφ0+O((Eφ−Eφ0)2)(>0), where the value of Eφ0(1.5 in the ground state, for example) is independent of the lattice configuration. This relation implies that the upper bound to the charge-transfer energy is given by Eφ0. The smallness of Eφ0, compared with the work function of ordinary metals and alloys (with the work function around 4 eV), is necessary for the realization of the 2D Wigner lattice in many layered high-Tc cuprates. 相似文献