Nucleation, growth and morphology of Co thin films on Ag(1 1 0)

Scanning tunneling microscopy (STM) experiments reveal that Co growth on Ag(1 1 0), at coverages of Co < 1 ML and low substrate temperatures (150 K), involves a concomitant insertion of Co into the top Ag layer and exchange of Ag out onto the surface. At 300 K, coverages of Co > 1 ML gives rise to a 3D nanocluster growth on the surface, with the clusters covered by Ag. Depending slightly on coverage, the clusters have a typical diameter of 3 nm and a height of 0.4 nm. Upon annealing to 500 K, major changes are observed in the morphology of the surface. STM and AES show that there is a reduction of the number of Co islands on the surface, partly due to subsurface Co cluster migration and partly due to sintering into larger clusters.     

Scanning tunneling microscopy/spectroscopy on multi-layered cuprate superconductor Ba2Ca5Cu6O12 (O1−x Fx)2

Scanning tunneling microscopy/spectroscopy (STM/STS) measurements on multi-layered cuprate superconductor Ba₂Ca₅Cu₆O₁₂ (O_1−x F_x)₂ are carried out. STM topographies show randomly distributed bright spot structures with a typical spot size of 0.8 nm. These bright spots are occupied about 28% per one unit cell of c-plane, which is comparable to the regular amount of apical oxygen of 20% obtained from element analysis. Tunneling spectra simultaneously show both the small and the large gap structures. These gap sizes at 4.9 K are about Δ 15 meV and 90 meV, respectively. The small gap structure disappears at the temperature close to T_C, while the large gap persists up to 200 K. Therefore, these features correspond to the superconducting gap and pseudogap, respectively. These facts give evidence for some ordered state with large energy scale even in the superconducting state. For the superconducting gap, the ratio of 2Δ/K_BT_C = 4.9 is obtained with T_C = 70 K, which is determined from temperature dependence of the tunneling spectra.     

Compact 120 TW Ti:sapphire laser system with a high gain final amplifier

A 120 TW/36 fs laser system based on Ti:sapphire chirped-pulse amplification (CPA) has been successfully established in our lab. The final four pass Ti:sapphire amplifier pumped by an energetic single-shot Nd:YAG—Nd:glass laser was designed and optimized. With 24 J/8 ns pump energy at 532 nm, 300 mJ/220 ps chirped pulse was amplified to 5.98 J in this amplifier, and a total saturated gain of 20 was achieved. The focused intensity of compressed beam could reach to 10²⁰ W/cm² with the M² of 2.0.     

Spectroscopic investigation of arsenate and selenate incorporation into hydroxylapatite

The mechanism(s) of arsenate and selenate incorporation into hydroxylapatite (HAP) using extended X-ray absorption fine structure (EXAFS) spectroscopy was investigated for As- and Se-doped HAP samples with concentrations between 200 and 2500 ppm. EXAFS data on As and Se K-edges have shown similar local coordination environments and are similar to that of P in HAP, suggesting the substitution of arsenate or selenate tetrahedra on the phosphate sites. EXAFS best-fitting for As-doped samples shows that the first shell is fitted with approximately 4 O atoms at 1.68 Å, showing As(V) in tetrahedral coordination, and Se K-edge EXAFS data are characterized by the backscattering contributions an oxygen shell at 1.2 Å in the Fourier transform, which can be fit with 4 O atoms at 1.65 ± 0.01 Å. This is characteristic of Se–O distances in SeO₄ tetrahedron. These findings suggest that arsenate and selenate substitute for phosphate groups with local distortions during the incorporation of these metals into the structure of HAP.     

The size distributions of nanoparticles of the oxides of Mg, Ba and Al in flames: Their measurement and dependence on the concentrations of free radicals in the flame

Flat, pre mixed, laminar, and very O₂-rich flames of C₂H₂ + O₂ + N₂ with [O₂]/[O₂]_stoich  2.8 and a temperature 2000 K have been burned at atmospheric pressure. Trace amounts (13 ppm) of the metals Mg, Ba or A1 were added to the unburnt gases by nebulising an aqueous solution of a halide of the metal, so that e.g., Mg formed molecules of Mg(OH)₂, MgOH and MgO, as well as free atoms of Mg. The relative abundances of these species were governed by well-characterised equilibria and consequently depended on the temperature and also the concentrations of the flame’s free radicals H, OH and O. Transmission electron microscopy showed that nanoparticles of the oxides of these metals formed from their pool of molecular species in these flames. Particle size distributions were also measured (much less tediously) with a mobility analyser (DMS 500, Cambustion) operating at 0.25 bara. The optimal way of continuously sampling the gases at a point along the flame’s axis was investigated and shown to require expanding the sample (to a pressure of 1/3 bara) supersonically through an orifice with a diameter greater than 0.4 mm. In addition, the sample had to be diluted with N₂, with a volumetric flow rate of 10–20 times that of the sample, all at 1/3 bara. The sizes of oxide nanoparticles, as measured by transmission electron microscopy, agreed with the values of 6–10 nm from the mobility analyser. With Mg all the metal appeared very rapidly as nearly spherical nanoparticles of MgO early in a flame’s reaction zone. This was also true for Ba, which, according to thermodynamic considerations at the final temperature of the flame, should not form any particles of BaO. That particles do actually form is due to the reaction zone having a relatively low temperature and super-equilibrium concentrations of the free radicals H, OH and O. Aluminium was expected to form particles of A1₂O₃. However, only a small fraction of the Al formed particles; this is attributed to the production of gas-phase molecules of Al₂O₃ (i.e., the nuclei) from AlO and AlO₂ being by a relatively slow three-body reaction, as well as Al₂O₃ being a very minor member of the gas-phase pool of molecular species containing Al.     

Combustion of nano-aluminum and liquid water

An experimental investigation on the combustion behavior of nano-aluminum (nAl) and liquid water has been conducted. In particular, linear and mass-burning rates of quasi-homogeneous mixtures of nAl and liquid water as a function of pressure, mixture composition, particle size, and oxide layer thickness were measured. This study is the first reported self-deflagration on nAl and liquid water without the use of any additional gelling agent. Steady-state burning rates were obtained at room temperature (25 °C) using a windowed vessel for a pressure range of 0.1–4.2 MPa in an argon atmosphere, particle diameters of 38–130 nm, and overall mixture equivalence ratios () from 0.5 to 1.25. At the highest pressure studied, the linear burning rate was found to be 8.6 ± 0.4 cm/s, corresponding to a mass-burning rate per unit area of 6.1 g/cm² s. The pressure exponent at room temperature was 0.47, which was independent of the overall mixture equivalence ratio for all of the cases considered. The mass-burning rate per unit area increased from 1.0 to 5.8 g/cm² s for an equivalence ratio range of 0.5–1.25. It varied inversely to particle diameter, increasing by 157% when the particle diameter was decreased from 130 to 50 nm at  = 1.0.     

Quasi-distributed displacement sensor for structural monitoring using a commercial OTDR

A quasi-distributed displacement sensor for structural monitoring using an optical time domain reflectometer is demonstrated. Four displacement sensing heads are placed along a standard single mode optical fibre in several locations with different intervals. Their configurations introduce power loss through the decrease of their fibre loop radius when displacement is applied. The decrease of the light intensity with displacement variation is reported. Losses of 9 dB for a 120 mm displacement with a sensitivity of 0.027 dB/mm are reported. The quasi-distributed configuration is able to address sensors with 1 m distance resolution between them.     

Two sub-band conductivity of Si quantum well

We report on two sub-band/bi-layer transport in double gate SiO₂–Si–SiO₂ quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacing changes monotonically from 2.3 to 0.3 meV when the total electron density is adjusted by gate voltages between 0.7×10¹⁶–. The conductivity is mapped in large gate bias window and it shows strong non-monotonic features. At symmetric well potential and high density these features are addressed to sub-band wave function delocalization in the quantization direction and to different disorder of the top and bottom interfaces of the Si well. In the gate bias regimes close to second sub-band/bi-layer threshold the non-monotonic behavior is interpreted to arise from scattering from the other electron sub-system with localized or low mobility states.     

Microwave dielectric properties of (1 − x)(Mg0.95Co0.05)TiO3–x(Na0.5La0.5)TiO3 ceramic system

The microstructures and the microwave dielectric properties of the (1 − x)(Mg_0.95Co_0.05)TiO₃–x(Na_0.5La_0.5)TiO₃ ceramic system were investigated. Two-phase system was confirmed by the XRD patterns and the EDX analysis. A co-existed second phase (Mg_0.95Co_0.05)Ti₂O₅ was also detected. The microwave dielectric properties are strongly related to the density and the matrix of the specimen. A new microwave dielectric material 0.88(Mg_0.95Co_0.05)TiO₃–0.12(Na_0.5La_0.5)TiO₃, possessing an excellent combination of dielectric properties: ε_r  22.36, Q × f  110,000 GHz (at 9 GHz), τ_f  2.9 ppm/°C), is proposed as a candidate dielectric for GPS patch antennas.     

Structure and properties of the one-dimensional cobalt oxide CaCo2O4

We have studied crystal structure and transport properties of the quasi one-dimensional cobalt oxide CaCo₂O₄. The CaCo₂O₄ phase crystallizes in calcium-ferrite type structure, which consists of a corner- and edge-shared CoO₆ octahedron network including one-dimensional double chains. Large thermoelectric power (S  150 μV/K at 390 K) with metallic temperature dependence of S, moderate resistivity (ρ  2.9 × 10⁻¹ Ω cm at 390 K) with carrier localization at low temperature, and normal thermal conductivity (κ  6.3 W/Km at 390 K) were observed. The phonon mean-free path was calculated from the observed data, as a function of temperature. The long phonon mean-free path (l  24 Å at 300 K) implies that the thermal conductivity could be suppressed by impurity scattering of phonons with partial element substitution.