Dy含量对红色长余辉发光材料Sr3Al2O6:Eu2+,Dy3+性能的影响

采用溶胶凝胶法制备了Sr3Al2O6:Eu2+,Dy3+红色长余辉发光材料,利用X射线衍射仪对材料的物相进行了分析,结果表明,1200℃下制备的样品的物相为Sr3Al2O6,少量的Eu和Dy掺杂没有影响样品的相组成.采用荧光分光光度计、照度计测定了样品的发光特性.结果表明Sr3Al2O6:Eu2+和Sr3Al2O6:Eu2+,Dy3+的激发光谱均为激发峰位于473 nm的宽带谱.Sr3Al2O6:Dy3+的发射峰位于530.1 nm,对应于Dy3+代替Sr2+位置后基质中形成的施主-受主对Dy·Sr-V″Sr的重新组合.Sr3-0.02-yAl2O6:0.02Eu2+,yDy3+(0相似文献   

Li~+掺杂Sr_2MgSi_2O_7∶Eu~(2+),Dy~(3+)长余辉材料的发光性能

采用高温固相法制备Li+掺杂Sr2Mg Si2O7∶Eu2+,Dy3+长余辉材料,对样品进行X射线衍射、扫描电镜、激发光谱、发射光谱、余辉衰减曲线和热释光曲线表征,研究了Li+掺杂对Sr2Mg Si2O7∶Eu2+,Dy3+发光性能的影响。实验结果表明:Li+掺杂对样品激发光谱和发射光谱的峰形、峰位基本没有影响,但是能改善样品的余辉性能。与未掺杂Li+的样品比较,Li+掺杂摩尔分数为2.5%样品的初始发光强度提高了1.5倍,余辉衰减常数提高了1.6倍。通过热释光曲线表征分析陷阱数量并计算了陷阱深度,分析表明,掺杂Li+能增加基质中氧空位的数量,适量增加陷阱深度,从而提高材料的发光性能。     

激发波长和Eu2+的掺杂量对Sr4 Al14 O25:Eu2+,Dy3+发光性能的影响

采用溶胶-凝胶法在低温、还原气氛下制备了长余辉发光材料Sr4 Al14O25:Eu2+,Dy3+.用X射线粉末晶衍射对其进行了物相鉴定,表明在1200℃已经得到纯相的Sr4Al14O25产物.研究了铕和锶的比值、激发光波长对所制备的Sr4 Al14O25:Eu2+,Dy3+发光性能的影响并对其影响机理进行了探讨.样品的发光性能测试结果表明:采用溶胶-凝胶法制备长余辉发光材料Sr4Al14O25:Eu2+,Dy3+,其灼烧温度比高温固相法灼烧温度低;激发光谱向长波方向延伸时,在488 nm处发射峰增强,在410 nm处发射峰减弱;在一定范围内发光强度随着Eu2+量的增加而增强,Eu2+的最佳掺杂量为0.007,Eu2+的掺杂量超过0.007时会发生浓度猝灭.     

蓝色长余辉材料Sr_2MgSi_2O_7∶Eu~(2+),Dy~(3+)及其基质的VUV-UV激发特性

Sr2MgS i2O7∶Eu2 ,Dy3 是一种有效的蓝色长余辉材料,采用高温固相法合成了Sr2MgS i2O7,Sr2MgS i2O7∶Dy3 ,Sr2MgS i2O7∶Eu2 及Sr2MgS i2O7∶Eu2 ,Dy3 ,利用同步辐射研究了它们的VUV-UV激发特性。在真空紫外光激发下,在基质中发现了稍弱的位于385 nm的发射带,在双掺杂的样品中,除了Eu2 的4 f5d→4 f发射带(465 nm)外,还观察到了575 nm处的发射峰;通过和Dy3 单掺杂样品的发射谱比较,发现它是来自于Dy3 的4 f-4 f(4F9/2→6H13/2)跃迁。在它们的激发谱上可以看出Dy3 与基质发射的有效激发均处于真空紫外区,在近紫外及可见区激发下未见到它们发光。另外在Sr2MgS i2O7∶Eu2 ,Dy3 中观察到Dy3 的发射也说明了Dy3 在该类长余辉材料中不仅作为陷阱用来延长余辉,而且也以发光中心形式存在于基质中。     

Ca~(2+)离子替代对Sr_4Al_(14)O_(25):Eu~(2+),Dy~(3+)结构和发光性能的影响

采用高温固相反应按化学式Sr4-xCaxAl14O25:Eu2+,Dy3+(x=0,0.8,1.6,2.4,3.2,4)配比原料,合成长余辉发光材料.X射线衍射分析表明当x2.4时,产物物相均为Sr4Al14O25正交结构;当x2.4时,产物物相转变为CaAl4O7单斜结构.对掺Ca量不同,但结构仍保持Sr4Al14O25的样品采用360nm激光照射,发射光谱表明样品发光均由以Eu2+为发光中心的电子4f65d→4f7跃迁所致,并且随着Ca掺入量的增加,样品发射光谱峰位逐渐蓝移.这是由于Ca2+取代Sr2+位置后,导致晶格收缩,影响Eu2+的5d能级劈裂情况,从而影响电子4f65d→4f7跃迁.余辉衰减检测和热释光谱分析发现,不同Ca掺入量的样品余辉衰减快慢不同,是由于其中存在的陷阱能级深度不同,且陷阱能级越深,其余辉时间越长.     

长余辉材料Sr_2MgSi_2O_7∶Eu~(2+),Dy~(3+)中稀土离子的发光特性

利用同步辐射光源(德国HASYLAB实验室的SUPERLUMI实验站)和真空紫外激光(157.6nm)对新型蓝光发射长余辉材料Sr2MgSi2O7∶Eu2 (0·2%),Dy3 (8%)进行了光谱研究。在170nm同步辐射光源激发下,观察到对应Eu2 :5d-4f跃迁的477nm发射带和对应Dy3 :4f-4f跃迁的两组线谱发射,其中只有来自Eu2 的5d-4f发射对长余辉光谱有贡献。在157.6nm激光激发下,除了上述发射外,还明显观察到对应Eu3 的红色线谱(590,614,626nm)。结合这些光谱特性,对Sr2MgSi2O7∶Eu2 ,Dy3 中稀土离子的发光特性以及长余辉发光机理进行了讨论,并提出了Eu2 充当空穴陷阱的可能性。     

Sr3SiO5∶Eu^2＋和Sr3SiO5∶Eu^2＋,Dy^3＋荧光粉的黄色长余辉性质

用高温固相法制备了Sr3SiO5∶Eu2 和Sr3SiO5∶Eu2 ,Dy3 荧光粉。在紫外光辐照后,Sr3SiO5∶Eu2 和Sr3SiO5∶Eu2 ,Dy3 荧光粉具有明亮的黄色长余辉,源于Eu2 的4f65d-4f7的跃迁。紫外光激发停止后,Sr3SiO5∶Eu2 的余辉时间是4 h以上。余辉衰减曲线和热释光曲线说明了引入Dy3 离子可以产生大量的深陷阱和浅陷阱。产生的深陷阱使余辉时间延长到6 h以上。由热释发光曲线,根据热释光的通用级公式拟合了陷阱深度。Sr3SiO5∶Eu2 和Sr3SiO5∶Eu2 ,Dy3 荧光粉是有应用前景的黄色长余辉材料。     

Sr3SiO5:Eu2+和Sr3SiO5:Eu2+, Dy3+荧光粉的黄色长余辉性质

用高温固相法制备了Sr3SiO5:Eu2 和Sr3SiO5:Eu2 , Dy3 荧光粉.在紫外光辐照后, Sr3SiO5:Eu2 和Sr3SiO5:Eu2 , Dy3 荧光粉具有明亮的黄色长余辉,源于Eu2 的4f65d - 4f7的跃迁.紫外光激发停止后,Sr3SiO5:Eu2 的余辉时间是4 h以上.余辉衰减曲线和热释光曲线说明了引入Dy3 离子可以产生大量的深陷阱和浅陷阱.产生的深陷阱使余辉时间延长到6 h以上.由热释发光曲线,根据热释光的通用级公式拟合了陷阱深度.Sr3SiO5:Eu2 和Sr3SiO5:Eu2 , Dy3 荧光粉是有应用前景的黄色长余辉材料.     

不同激发波长对Sr3Al2O6∶Eu2+,Dy3+红色长余辉发光材料发射光谱的影响

采用高温固相法合成了Sr3Al2O6∶Eu2+,Dy3+长余辉发光材料。用X射线衍射仪及荧光分光光度计对材料物相及光谱性能进行了分析。结果表明:所得样品为Sr3Al2O6的纯相,在360nm波长的激发下,得到波峰为537nm的宽带发射光谱;在468nm波长的激发下,得到波峰为590nm的宽带发射光谱;在波长为394nm的激发下,537和590nm的峰同时出现。根据晶格场效应和电子云膨胀效应,对不同激发波长对Sr3Al2O6∶Eu2+,Dy3+发射光谱的影响进行了解释。结果表明:在Sr3Al2O6∶Eu2+,Dy3+中发光中心因其5d能级劈裂幅度不同及4f65d1能带重心不同而导致发光颜色的不同。     

Eu和Dy掺杂BaAl12O19长余辉发光性能研究

采用高温固相法在不同的气氛条件下合成了BaAl12O19:Eu2+/Eu3+,Dy3+发光材料。X射线衍射(XRD)表明:实验得到了纯净的BaAl12O19相结构,Eu和Dy的掺入并未改变相结构。通过比较发现,Eu和Dy掺杂后导致XRD衍射峰向高角度有微小移动,显示Eu和Dy取代晶格中Ba后使面间距发生变化。发射光谱表明:在不同条件下合成的样品都存在Eu2+的4f65d1→4f7之间的宽带跃迁;空气气氛下合成的样品中Eu2+的宽带跃迁的存在表明样品中发生了自还原现象。Dy3+的加入使样品发光增强,同时样品具备了长余辉特性。还原气氛下合成的Eu和Dy共掺样品的余辉衰减和热释光研究表明所得样品具有良好的室温和高温长余辉性能。     

13C-selective IRMPD of CBr2F2/Cl2 and CCl2F2/Br2 systems

The CO₂ TEA laser irradiation of CBr₂F₂ in the presence of Cl₂ yielded ¹³C-enriched CBrClF₂ and ¹³C-enriched CCl₂F₂ under selected experimental conditions. As the photolysis proceeded, the ¹³C concentration of CBrClF₂ decreased gradually and that of CCl₂F₂ increased up to 90% or higher. These results can be explained by the mechanism involving the secondary ¹³C-selective IRMPD of the primary product CBrClF₂. On the other hand, the carbon-containing product for a CCl₂F₂/Br₂ system was only CBrClF₂; the further IRMPD of which probably regenerated CBrClF₂ in the presence of Br₂. The decomposition probabilities of ¹²C- and ¹³C-containing molecules in both systems were measured as functions of laser line, laser fluence, and reactant pressures.     

μ+SR study of LaNi2As2, URh2Si2 and CeRh2Si2

Muon spin relaxation experiments have been carried out in the paramagnetic and magnetically ordered states of URh₂Si₂ and CeRh₂Si₂. As the magnetic structure of these compounds is well known, these measurements can help to characterise their magnetic properties probed by μSR and to understand the μSR results of the heavy fermion compounds of the same crystallographic family. Our measurements show that the muons occupy two different crystallographic sites. The spectra of URh₂Si₂ and CeRh₂Si₂ in the magnetically ordered states are very different, probably reflecting their different magnetic structures. The spectra obtained on CeRh₂Si₂ are similar to the published spectra of the heavy fermion compound CeCu_2.1 Si₂. Muon spin rotation measurements on LaNi₂As₂ indicate that the muon is diffusing at 150 K.     

Magnetostriction of SmMn2Ge2 and GdMn2Ge2 intermetallic compounds

Longitudinal and transverse magnetostrictions of polycrystalline samples of intermetallic compounds RMn₂Ge₂ (R=Sm or Gd) are measured in pulsed magnetic fields up to 250 kOe. It is found that linear magnetostrictive strains of about 10^?3 arise in a temperature range in which the magnetic field causes a change in the magnetic state of a manganese magnetic subsystem. The results obtained are described within the model of a two-sublattice ferrimagnet with a negative exchange interaction in the manganese subsystem in terms of a strong dependence of this interaction on interatomic distances.     

X-ray photoemission spectra measurements of CeNi2Sb2 and CeCu2Sb2

X-ray photoemission spectra, resistivity and susceptibility of CeNi₂Sb₂ and CeCu₂Sb₂ were measured and are discussed. The results indicate that these alloys are Kondo systems. For comparison of the valence band properties, the spectra of the isostructural alloys of RT₂X₂-type with R = La, Gd, T = Cu, Ni and X = Sn, Sb were investigated, too.     

Eu2+掺杂CaSi2O2N2荧光粉发光性能

采用固相反应法合成了组成为Ca_1-xEu_xSi₂O₂N₂的Eu²⁺掺杂CaSi₂O₂N₂荧光粉.通过荧光光谱对样品的发光性能进行了研究,发现Eu²⁺掺杂CaSi₂O₂N₂荧光粉发射光谱为宽波段的单峰结构,主要包含绿光和黄光区,发射峰在556~568 nm.从发射光谱的宽带特征来看,CaSi₂O₂N₂:Eu²⁺的发射主要对应着Eu²⁺离子4f⁶5d→4f⁷跃迁.从激发光谱所覆盖的范围还可以看到,样品可以有效的被UV蓝-光激发,这意味着该类荧光粉在白光LED方面有可能得到广泛的应用.另外,样品的发光性能与激发离子的浓度有着很大关系.激发离子浓度增大时,发射光谱会发生明显红移.利用这一性质,可以通过改变Eu²⁺浓度来调节荧光粉的发光范围,从而满足不同场合的需要.同时,Eu²⁺浓度提高,样品发射光谱的强度也会随之增强,在x=0.06时发射强度达到最大值,之后继续增加Eu²⁺浓度,强度不仅没有增加反而降低,即出现浓度猝灭现象.     

CO2-laser-induced multiphoton absorption of CF2Cl2

Energy absorption by CF₂Cl₂ from an intense TEA CO₂ laser pulse is measured as a function of the pressure of CF₂Cl₂ and the pressure of Ar bath gas for different laser energy fluences. The fraction of the molecules excited by the laser field and the average energy of the molecular ensemble are determined by a simple experimental method.     

(NH_2CH_2COOH)_2CdCl_2晶体的拉曼光谱的研究

（ＮＨ２ＣＨ２ＣＯＯＨ）２ＣｄＣｌ２晶体的拉曼光谱的研究刘建军吴粤郑吉民扈士芬蓝国祥（南开大学天津３０００７１）ＲａｍａｎＳｐｅｃｔｒａｏｆ（ＮＨ２ＣＨ２ＣＯＯＨ）２ＣｄＣｌ２ＣｒｙｓｔａｌｓＬｉｕＪｉａｎｊｕｎ，ＷｕＹｕｅ，ＺｈｅｎｇＪｉｍｉｎ，Ｈ...     

Synthesis and properties of HgI2 intercalation of Bi2Sr2CaCu2Oy superconductor

Polycrystalline or single crystals of HgI₂ intercalated Bi₂Sr₂CaCu₂O_y (Bi2212) have been synthesized and their properties have been studied together with those of HgBr₂ intercalates. Single crystals of HgI₂ intercalated Bi2212 were synthesized by a stepwise intercalation method using iodine intercalate as a secondary host material. These could not be obtained through direct intercalation methods by which polycrystalline sample were obtained. From ac susceptibility and resistivity measurements, superconducting onset temperature (T_con) for polycrystalline HgI₂ intercalate was found to be 82 K which was higher than that of the host (75 K). On the other hand, T_con for single crystal HgI₂ intercalate was shown to be 79–80 K which is lower than that of host (95–97 K). The effect of HgI₂ or HgBr₂ intercalation on T_c tried discussion from the view point of hole doping and interblock coupling effect.