Renormalization Group study of a critical lattice model

The Renormalization Group is used to study the correlation functions of a nonlocal hierarchical model mimicking the ()⁴ model, dipole gas and the like. It is shown that the infrared behaviour of the correlations is that of the massless gaussian 1/2c()()².     

Nonlinear optimization simplified by hypersurface deformation

A general strategy is advanced for simplifying nonlinear optimization problems, the ant-lion method. This approach exploits shape modifications of the cost-function hypersurface which distend basins surrounding low-lying minima (including global minima). By intertwining hypersurface deformations with steepest-descent displacements, the search is concentrated on a small relevant subset of all minima. Specific calculations demonstrating the value of this method are reported for the partitioning of two classes of irregular but nonrandom graphs, the prime-factor graphs and the pi graphs. We also indicate how this approach can be applied to the traveling salesman problem and to design layout optimization, and that it may be useful in combination with simulated annealing strategies.     

A cell dynamical system model of chemical turbulence

A cellular-automaton-like caricature of chemical turbulence on an infinite one-dimensional lattice is studied. The model exhibits apparently turbulent space-time patterns. To make this statement precise, the following problems or points are discussed: (1) The infinite-system-size limit of such cell-dynamical systems and its observability is defined. (2) It is proved that the invariant state in the large-system-size limit of the turbulent phase exhibits spatial patterns governed by a Gibbs random field. (3) Potential characteristics of turbulent space-time patterns are critically surveyed and a working definition of (weak) turbulence is proposed. (4) It is proved that the invariant state of the turbulent phase is actually (weak) turbulent. Furthermore, we conjecture that the turbulent phase of our model is an example of a K system that is not Bernoulli.     

Spinodal-like dewetting of thermodynamically-stable thin polymer films

Energetic considerations indicate that long-range Van der Waals forces stabilize thin polystyrene (PS) films against height fluctuations on silicon substrates. Nevertheless, we report here on the amplification of capillary waves of specific wavelengths for 15 nm thick PS films on silicon, ultimately leading to dewetting in a spinodal-like process. However, the temporal dependence of the wavelength of the growing instability does not agree with the classical spinodal dewetting mechanism. Therefore, this phenomenon is ascribed to the existence of structural forces resulting either from the restructuring of the films or from density variations within the films during annealing, in accordance with recent theoretical treatments. The process is shown not to be limited to polystyrene films, which indicates the generality of our findings.Received: 1 August 2003PACS: 68.15. + e Liquid thin films - 47.20.-k Hydrodynamic stability - 47.20.Ma Interfacial instability - 68.08.-p Liquid-solid interfaces     

Buoyancy forces in magnetic fluids

The ponderomotive force on a macroscopic body in a magnetic fluid is calculated by a hydrodynamic approach. The resulting equations are generally valid, neither small susceptibilities nor stationarity are assumed. The simple and widely-used formulaV(M-M ^bg )H is recoverd in linear order of ; magnetostrictive effects are shown to contribute in the order ³. The expressions derived here are definite and unambiguous, they do not depend on whether one starts from a theory in terms ofH, or in terms ofB: the correct evaluation of the contribution dV[-p] resolves the apparent contradiction between the force density expressions ₀ MH, orMB.     

Field emission from a metal covered with a semiconducting layer: A model calculation

The electron field emission from a metal covered with a thin layer of a semiconductor with electron affinity and dielectric constant is considered. The model takes into account the metal-semiconductor (Schottky) barrier of height _b, the conduction current inside the semiconductor, and the band bending at the semiconductor-vacuum interface due to the external field penetration. For thick films under moderately high electric fields, the metal-semiconductor interface does not influence the emission behaviour whereas for thin films, the interface plays an important role, depending on the barrier heights. In particular, for /_b<^2/3 the I–V characteristics will, for strong fields, be dominated by the field emission process at the interface. In such cases important deviations from Fowler-Nordheim behaviour are found.     

Average coordination-number dependence of glass-transition temperature in Ge-In-Se chalcogenide glasses

Twenty-six glassy compositions, belonging to the Ge_xIn₆Se_94-x and Ge_xIn₁₂Se_88-x families of the Ge-In-Se system, were prepared from high purity constiment elements. Differential Scanning Calorimetry (DSC) measurements were carried out on these glasses. The DSC thermograms were used to determine the glass transition temperatures (T _g) for the compositions examined. TheT _g-composition dependence of the Ge_xIn₆Se_94-x family shows a minimum inT _g at a value of the average coordination number, r, equal to 2.4. For both families of the glasses examined, theT _g-r dependence displays maxima at r=2.75 and r=2.83 for Ge_xIn₆Se_94-x and Ge_xIn₁₂Se_88-x families, respectively. These results are interpreted by using the Phillips model of rigidity percolation and Chemically Ordered Covalent Network (COCN) model.     

Carrier lifetime in single-crystal PbS films

The temperature dependence of the majority carrier lifetime was studied in single-crystal PbS films. In n- and p-type films in the range 300-200 ° K, increases exponentially with decreasing temperature, with an activation energy of e O. 17-0. 2 eV. This m dependence is assumed due to the trapping of minority carriers at deep levels. Below 160 ° K in the n-type films, does not depend on the temperature, while in the p-type films, decreases exponentially with an activation energy of 0. 11–0. 14 eV.Translated from Vysshikh Uchebnykh Zavedenii Fizika, No. 6, pp. 64–67, June, 1970.     

Infrared photoemission of holes from ultrathin (3–20 nm) Pt/Ir-compound silicide films into silicon

The infrared responsivity is measured at low temperature on Schottky barrier detectors having ultrathin (3–20 nm) PtSi, IrSi, and compound silicide films as a metal electrode on p-type silicon. The total yield for internal hole photoemission is 1% per incident photon for PtSi and 0.1% for IrSi at a wavelength of =4 m. The cut-of wavelengths are =5.4 m and =8.2 m for PtSi and IrSi, respectively. The compound silicides fabricated by sequential evaporation of Pt and Ir and subsequent annealing at T=450° C show characteristics identical to that of PtSi.A Monte Carlo computer modelling is performed to simulate the scattering mechanisms in the thin silicide film leading to hole photoemission across the Schottky barrier into silicon. The optimum emission yield is observed for ultrathin films of the order of a few nanometers. The optimum film thickness is close to the escape depth d _esc2–3×L _el5 nm which scales with the mean free path L _el for quasi elastic scattering. The enhancement of the internal photoemission in ultrathin silicide films is predominantly due to the increase of the optical photoexcitation density rather than to an increase of the electrical emission yield in thin films.     

Convexity and concavity of eigenvalue sums

It is well known that(H), the sum of the negative eigenvalues of a Hermitian matrixH, is a concave and increasing function ofH. In contrast to this, we prove that forA nonsingular Hermitian andP positive definite, the functionP(AP)=(P ^1/2 AP ^1/2) is convex and decreasing. Several other results of this nature are also proved.     

Some properties of frustrated spin systems: extensions and applications of Lieb-Schupp approach

Lieb and Schupp have obtained a number of ground-state properties for frustrated Heisenberg models. The basic tool used was certain version of spin-reflection positivity method. One group of these results is related to singlet nature of ground state. It needs an assumption of reflection symmetry present in the system. In this paper, it is shown that analogous results hold also for other symmetries (inversion etc.). The second Lieb-Schupp result is matrix inequality, which imply inequalities between ground-state energies of certain systems. In the paper, the Lieb-Schupp inequality is applied to relate ground-state energies of various systems: spin chains, ladders and multidimensional lattices.     

Parametric dependence of the properties of pulsed-laser-deposited diamond-like carbon films

The properties of Pulsed-Laser-Deposited Diamond-Like Carbon (PLD DLC) films are studied as functions of the power density and the wavelength of the laser beam, and the incident angle of the beam relative to the normal of the target surface. All the films have a similar structure consisting of graphite particulates embedded in a continuous matrix, so the macroscopic performance of the films is determined by the overall contributions of the particulates and the matrix. The use of higher, shorter, or larger leads to an enhancement of the diamond-like characteristics and a simultaneous increase of the particulate density. These two effects give opposite contributions to the electrical conductivity _R, leading to the following results. (i) _R drops with increasing in the low range (region I) due to the stronger diamond-like nature of the matrix, but increases sharply after has exceeded a threshold _min as a result of the rapid increase in particulate density. (ii) In region I, the use of shorter or larger leads to a more diamond-like matrix, and this overwhelms the degradation effect caused by the slight increase in particulate density. The samples thus become more insulating. In the high region (region II), however, the use of shorter or larger gives rise to higher particulate density, thereby increasing the electrical conductivity.     

Symmetry properties of nonlinear barrier coefficients

This paper concerns the properties of a symmetric barrier between two reservoirs. The barrier can passK conserved quantities. The current of theith quantity is assumed to satisfy the nonlinear relationJ _i=A _ijj+B_ijkljkl where the _i's are the affinity differences across the barrier andA _ij andB _ijkl are functions of the average affinities of the reserviors. It is shown thatB _ijkl is symmetric in all indices.     

Spectrum of surface electron states and the height of the nickel-silicon Schottky barrier in the presence of nonuniform deformation

We have studied the spectrum of surface electron states and the height (_B) of the Schottky barrier in silicon-nickel structures when a nonuniform deformation is present. We show that the decrease in the barrier height _B caused by the deformation is due both to a change in the silicon band gap and to a deformation of the spectrum of the surface electron states.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 6–9, May, 1984.     

Size and Interface Control of Novel Nanocrystalline Materials Using Pulsed Laser Deposition

We have developed a novel method based upon pulsed laser deposition to produce nanocrystalline materials with an accurate grain size and interface control. Using this method, the grain size in the case of Cu thin films was controlled by introducing a few monolayers of insoluble elements having high surface energy such as W, which increases interfacial energy and provides more nucleation sites. The grain size is determined by the thickness of Cu layer and the substrate temperature at which it transforms into islands (nanocrystalline grains) of fairly uniform size which we desgnate as self-assembling approach. Using this approach, the grain size was reduced from 160nm (Cu or Si (100) substrate) to 70–80nm for a simple W layer (Cu/W/Si (100)) to 4nm for a multilayer (Cu/W/Cu/W/Si (100)) thin film. The hardness of these films was evaluated using a nanoindentation technique, a significant increase in hardness from 2.0GPa for coarse-grained 180nm to 12.5GPa for 7nm films was observed. However, there is decrease in hardness below 7nm for copper nanocrystals. The increase in hardness with the decrease in grain size can be rationalized by Hall–Petch model. However, the decrease in slope and eventually the decrease in hardness below a certain grain size can be explained by a new model based upon grain-boundary deformation (sliding). We also used a similar materials processing approach to produce quantum dots in semiconductor heterostructures consisting of Ge and ZnO dots or nanocrystals in AlN or Al₂O₃ matrix. The latter composites exhibit novel optoelectronic properties with quantum confinement of phonons, electrons, holes and excitons. Similarly, we incorporated metal nanocrystals in ceramics to produce improved mechanical and optical properties.     

Dynamic recovery,strain hardening and flow stress in hot working of 316 steel

The strain hardening rate was determined as a function of flow stress in torsion tests over the range 900–1200 °C, 0·1–5·0s^–1 in both as-cast and worked 316 stainless steel. Changes in slope of the- curves and extrapolation to the=0 axis permitted determination of the saturation stress _s ^* , and the critical strain for recrystallization which could be compared with the peak in the flow curve. Analysis of the dependence on temperature and strain rate showed that the data could be fitted either to the Kocks-Mecking equations or to the sinh and Arrhenius functions. The flow stresses and the empirical constants in the above equations are compared with those of 304 and 317 steels which contain less and more Mo, respectively.Presented at the 4th International Symposium on Plasticity of Metals and Alloys, Srní, Czechoslovakia, September 7–11, 1987.     

UV cavity enhanced absorption spectroscopy of the hydroxyl radical

We present the application of a continuous-wave ultra-violet tuneable light source for detection of the hydroxyl radical (OH) using cavity-enhanced absorption spectroscopy of the Q₁₁(2) and Q₂₁(2) absorption lines in the A²⁺(v=0)²_3/2(v=0) band at ca. 308 nm. A tuneable infra-red diode laser operating at 835 nm and either an Ar⁺ laser or a single frequency continuous-wave intracavity frequency-doubled diode laser, both operating at ca. 488 nm, were used to produce 0.1–0.5 W of tuneable radiation at ca. 308 nm by sum frequency generation in a BaB₂O₄ crystal. Cavity enhanced absorption spectroscopy was used to detect OH generated by UV photolysis of water vapour in argon, nitrogen, neon and helium at atmospheric pressure. A noise-equivalent (1) absorption sensitivity of 2.1×10^-7 cm^-1Hz^-1/2 measured over 128 scans in a time of 1.16 s was demonstrated with mirrors of reflectivity 0.9963 in a cavity of length 58.5 cm for a 2 cm^-1 scanning range at a UV power of 0.5 W. An OH detection limit (1) of 3.84×10⁹ moleculecm^-3 was estimated in argon at atmospheric pressure. OH collisional broadening in humidified N₂, Ar, Ne and He was determined at atmospheric pressure . PACS 39.30.+w; 42.55.Px; 42.62.Fi; 42.68.Ca     

A study of the influence of dislocations on some of the magnetic properties of permalloy alloys

The influence of dislocations produced during plastic pulling on some magnetic properties is studied experimentally with special attention to the coercive force of Fe-Ni alloys with a cubic face-centred lattice. Vicena's theory of the influence of dislocations on the coercive force is rendered more accurate and the dependences of the coercive force on the plastic lengthening of the samples are derived for the above-mentioned alloys; the results are compared with the measured dependences. The observed anomalies are explained.

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In conclusion the author would like to thank J. Kaczér for many suggestions and advice, F. Kroupa for advice and cooperation in the theoretical part of the paper and particularly J. Grolmus for carefully carrying out the many measurements and for all-round help in the experimental work. He also thanks V. Kamberský for carrying out some of the measurements and finally V. Janovec for some remarks and for carefully reading the paper.     

Thickness dependence of the spin- and angle-resolved photoemission of ultrathin,epitaxial Ni(111)/W(110) layers

The thickness dependence of the magnetic band structure of ultrathin, epitaxial Ni(111)/W(110) layers has been studied by spin and angle-resolved photoemission spectroscopy. The changes of the spin-resolved photoemission intensities upon reducing the layer thickness depend strongly on the wavevector along the -L line of the Brillouin zone. The measured exchange splitting atk 1/3(-L) andk 1/2(-L) is found to be independent of the layer thickness for layers consisting of 3 or more atomic layers, while decreases rapidly with the layer thickness atk2/3(-L). This behavior is very similar to the temperature dependence of the spin-resolved photoemission spectra of bulk Ni(111) at the samek-points.     

Nanometer-microscopy of the electron transmission through an ultrathin (3–22 nm) Au film and of the Au-Si schottky barrier height

Direct imaging with nanometer scale resolution of the Schottky barrier height and of the ballistic transmission of electrons through an ultrathin metal film is demonstrated for the first time. The images are obtained by applying a new pixel-by-pixel evaluation method to the ballistic electron emission spectroscopy (BEES). We find a laterally uniform Schottky barrier height _B=0.88 eV for ultrathin (3–22 nm) Au films evaporated on Si. The transmission coefficient is strongly correlated with the island structure of the Au film. A transmission decay length =14 nm is determined by a statistical analysis of the transmission coefficient with variation of the film thickness.