非化学计量和掺杂对(Na1/2Bi1/2)0.92Ba0.08TiO3陶瓷电性能的影响

研究了非化学计量和掺杂对无铅压电陶瓷(Na_1/2Bi_1/2)_0.92Ba_0.08TiO₃的压电性能及去极化温度的影响.研究发现A位非化学计量可以提高陶瓷的压电性能;B位掺杂对材料电学性能的影响规律类似于Pb(Ti,Zr)O₃系压电陶瓷的相关规律;由于非化学计量和掺杂会影响到A位离子对B位离子与氧离子形成的BO₆八面体的耦合作用,影响到畴的稳定性,从而影响 关键词： 无铅压电陶瓷 非化学计量 掺杂 电性能     

Na1/2 Bi1/2 TiO3体系的电子结构与极化特性

采用自洽场离散变分Xa计算方法，研究了ABO3型钙钛矿结构无铅压电陶瓷Na1/2Bi1/2TiO3体系的电子结构，分析了A，B位元素取代对Na1/2Bi1/2TiO3压电陶瓷极化性能的影响．结果表明：NBT体系压电陶瓷材料存在自发极化，B位离子位移使铁电性增强，Ba，Sr与Mn离子A，B位复合取代可降低矫顽场、提高自发极化强度，从而提高材料的铁电性能，并通过实验对此结论进行了验证．     

溶胶-凝胶法制备的高压电常数(Bi_(0.5)Na_(0.5))_(1-x)Ba_xTiO_3系无铅压电陶瓷

测量了使用溶胶 凝胶工艺制备的 (Bi0 5Na0 5) 1 -xBaxTiO3(x =0 0 0 ,0 0 4 ,0 0 6 ,0 0 8,0 12 )系陶瓷的介电、压电、铁电和热释电性能 .由于使用了溶胶 凝胶工艺制备的粉料 ,因此所有样品的压电性能都得到了较大提高 .其中(Bi0 5Na0 5) 0 94 Ba0 0 6 TiO3系陶瓷具有该系列最大的压电常数 ,d33=173× 10 - 1 2 C N ,与传统工艺相比 ,d33提高了近4 0 % .同时 ,在一定范围内 ,随Ba含量的增加 ,材料的剩余极化Pr 和矫顽场Ec 逐渐减小 ,退极化温度逐渐降低 .对于 (Bi0 5Na0 5) 0 94 Ba0 0 6 TiO3系陶瓷 ,剩余极化和矫顽场分别为 2 5 μC cm2 和 2 8kV cm ,退极化温度约为 80℃ .     

溶胶-凝胶法制备的高压电常数（Bi0.5Na0.5）1－xBaxTiO3系无铅压电陶瓷

测量了使用溶胶-凝胶工艺制备的(Bi0.5Na0.5)1-xBaxTiO3(x=0.00，0.04，0.06，0.08,0.12)系陶瓷的介电、压电、铁电和热释电性能.由于使用了溶胶-凝胶工艺制备的粉料，因此所有样品的压电性能都得到了较大提高.其中(Bi0.5Na0.5)0.94Ba0.06TiO.3系陶瓷具有该系列最大的压电常数，d33=173×10-12C/N，与传统工艺相比，d33提高了近40%.同时，在一定范围内，随Ba含量的增加，材料的剩余极化Pr和矫顽场Ec逐渐减小，退极化温度逐渐降低.对于(Bi0.5Na0.5)0.94Ba0.06TiO.3系陶瓷，剩余极化和矫顽场分别为25μC/cm2和28kV/cm，退极化温度约为80℃. 关键词： 溶胶-凝胶 压电常数 剩余极化 矫顽场     

立方相Na_(1/2)Bi_(1/2)TiO_3和K_(1/2)Bi_(1/2)TiO_3的电子结构和结构不稳定性的第一性原理比较研究

采用基于密度泛函理论的第一性原理方法比较研究了Na1/2Bi1/2TiO3和K1/2Bi1/2TiO3的电子结构、离子位移势能面和Γ声子等性质.结果表明,Na1/2Bi1/2TiO3和K1/2Bi1/2TiO3的电子结构很相似,价带由O 2p电子态主导并包含部分Ti 3d和Bi 6p电子态,导带低能部分由Ti 3d空轨道构成;K取代Na后其Ti—O和Bi—O键的键强略有增加.两者的离子位移势能面也很接近,O离子的偏心位移对结构不稳定性起主导作用,且K取代Na后其作用增强.Γ声子都存在3个软模,分析表明软模主要来自O6基团的振动,K取代Na后A2u软模发生硬化.     

高温无铅BaTiO_3-(Bi_(1/2)Na_(1/2))TiO_3正温度系数电阻陶瓷阻抗和介电谱分析

采用固相反应法制备了Y2O3施主掺杂的92 mol%BaTiO3-8 mol%(Bi1/2Na1/2)TiO3(BBNT8)高温无铅正温度系数电阻(positive temperature coe?cient resistivity,PTCR)陶瓷.利用透射电镜观察材料的显微结构,发现陶瓷的显微结构主要包括晶粒和晶界两部分,观察不到明显的壳层结构.进一步利用交流阻抗谱研究了陶瓷的宏观电学性能,发现陶瓷的总电阻是晶粒和晶界两部分的贡献,而晶粒电阻很小,在居里温度以上变化不大,材料的PTCR效应主要是晶界部分的贡献.当温度高于居里温度时,随着温度的升高,晶界介电常数逐渐减小,导致势垒增加,晶界电阻增大,从而产生正温度系数效应.最后,通过测试材料的介电频谱特性,研究计算了陶瓷的室温电阻率.     

溶胶-凝胶法制备Bi0.5Na0.5TiO3陶瓷及其电学特性

用溶胶-凝胶工艺成功制备出Bi05Na05TiO3纳米微粉，并利用此微粉烧结出高致密度的Bi05Na05TiO3陶瓷.这种新工艺制备的Bi05Na05TiO3陶瓷，其压电性能远远高于普通方法制备的陶瓷，其中压电常数d33和机电耦合系数kt分别高达102×10-12C/N和58%.同时发现，对于这种Bi05Na05TiO3陶瓷，室温时只需施加100kV/cm左右的交变电场，就可得到矩形度极好的饱和回线，得到的剩余极化Pr和矫顽场Ec分别为32μC/cm2和61kV/cm.而在100℃以上只需施加35kV/cm的极化电场就可使样品充分极化.     

单相Na0.5Bi0.5Ti1-xMnxO3陶瓷中的多铁性

溶胶凝胶法制备了Na0.5Bi0.5Ti1-xMnxO3(x=0,0.02,0.04)陶瓷样品,X射线衍射(XRD)分析表明陶瓷样品均形成了单一的钙钛矿(ABO3)型结构且没有杂质相的形成.随着Mn含量的增加,XRD峰向高角度方向移动,表明Mn离子进入Na0.5Bi0.5TiO3晶格.掺杂样品均表现出室温铁磁性和铁电性.磁测量表明样品中存在复杂的磁相互作用,包括铁磁,反铁磁和顺磁相互作用.以上结果表明,通过Mn的掺杂可以使铁电材料Na0.5Bi0.5TiO3转变为多铁材料.     

(Bi0.5Na0.5)TiO3-Ba(Ti,Zr)O3 陶瓷的电性能研究

采用氧化固相法制备了(1-x)(Bi0.5Na0.5)TiO3-xBa(Ti0.95Zr0.05)O3(BNT-BZT)陶瓷,其中掺入量x的值分别为0,0.04,0.05,0.06,0.07.研究了BNT-BZT体系陶瓷的准同型相界以及陶瓷材料的微观结构和性能之间的关系,并探讨了陶瓷的介电性能和铁电等性能.通过探究Ba(Ti,Zr)O3(BZT)掺杂量对BNT 各性能的影响得出了当掺杂量x=0.05得到结构较为致密,介电,铁电性能较好的样本,对工业化研究和生产有重要的意义     

锰掺杂对Ba(Zr,Ti)O3陶瓷压电与介电性能的影响

采用氧化物固相反应法制备了锰掺杂改性的Ba(Zr_0.06Ti_0.94)O₃陶瓷.研究了锰的掺杂量对Ba(Zr_0.06Ti_0.94)Mn_xO₃ (BZTM)陶瓷的结构、介电和压电性能的影响.实验发现,当锰含量x<0.5 mol%时进入晶格,使材料压电性能提高,损耗减小,表现出受主掺杂的特性;当锰含量x>0.5 mo 关键词： Ba(Zr 3 陶瓷')" href="#">Ti)O₃ 陶瓷 锰掺杂 介电性能 压电性能     

Luminescence properties of K1/2Bi1/2TiO3:Pr3+ and Na1/2Bi1/2TiO3:Pr3+

The luminescence properties of K(1/2)Bi(1/2)TiO(3):Pr(3+) and Na(1/2)Bi(1/2)TiO(3):Pr(3+) powders are investigated in the temperature range 10-600 K. The experimental data are interpreted on the basis of metal-to-metal charge transfer processes and by considering Bi(3+)-to-Pr(3+) sensitization effects.     

Electromechanical properties and dielectric behavior of (Bi1/2Na1/2)(1−1.5x)BixTiO3 lead-free piezoelectric ceramics

Bismuth doped bismuth sodium titanate ceramics [(Bi_1/2Na_1/2)_(1−1.5x)Bi_xTiO₃, x=0 to 0.06] were prepared, and the resulting effects on the microstructure and dielectric properties were examined. All of the Bi-doped ceramics exhibited a single phase of perovskite structure with rhombohedral symmetry. The poling leakage current was significantly reduced by the doping of Bi, facilitating the poling process of the ceramics. The doping with Bi enhances the piezoelectric properties and increases the dielectric constant and the dielectric loss of the ceramics. At 2 mol% Bi-doping level, the ceramics exhibit a large remanent polarization of 47 μC/cm² and a relatively low coercive field of 71 kV/cm, while their d₃₃ and k_p reach a maximum value of 95 pC/N and 21%, respectively.     

Coexistence of ergodicity and nonergodicity in LaFeO(3)-modified Bi(1/2)(Na(0.78)K(0.22))(1/2)TiO(3) relaxors

The effect of LaFeO(3) addition to Bi(1/2)(Na(0.78)K(0.22))(1/2)TiO(3) ceramics on the phase stability and macroscopic functional properties was investigated. Similarly to other chemical modifiers known in the literature, LaFeO(3) addition suppresses an electric-field-induced long-range ferroelectric order, giving rise to a giant unipolar strain of ～0.3% at 2?mol% LaFeO(3) addition. Time-dependent changes in polarization and strain hysteresis loops both during successive electrical cycling and after removal of the electric field suggest that a specimen with 2?mol% LaFeO(3) consists of both ergodic and nonergodic phases, which is unique among the known relaxor materials.     

Facile preparation and performance of novel high-TC xBi(Ni1/2Ti1/2)O3-(1-x)Pb(Zr1/2Ti1/2)O3 piezoceramics

High Curie temperature (T_C) xBi(Ni_1/2Ti_1/2)O₃-(1-x)Pb(Zr_1/2Ti_1/2)O₃ (xBNT-(1-x)PZT, BNT-PZT) piezoelectric ceramics were prepared by the conventional ceramic processing. The composition-induced morphotropic phase boundary (MPB) and its influences on structure and electrical performance were investigated. The synthesized BNT-PZT ceramics exhibit rather pure perovskite structure, and densified microstructure morphology with uniform elementals distribution in both grains and grain boundaries. With increasing the content of Bi(Ni_1/2Ti_1/2)O₃ (BNT), crystal structure of the BNT-PZT ceramics transform from tetragonal phase to rhombohedral phase, and dielectric response peaks change from narrow shape to very broad shape but all presenting dielectric frequency dispersion. The diffused and relaxation dielectric behavior can be fitted well by the quadratic law, and the Vogel-Fulcher law fitting provides additional information on the relaxation characteristic. The MPB effects are confirmed further by ferroelectric and piezoelectric properties measurements. High-T_C combined with excellent piezoelectric performance can be realized in the BNT-PZT system, which presents promising applications in geothermal exploration, aerospace and related elevated temperatures fields.     

Impedance spectroscopy of dielectric properties of perovskite ceramics Bi(Mg1/2Ti1/2)O3

Physics of the Solid State - The dielectric properties of metastable high-pressure perovskite ceramics Bi(Mg1/2Ti1/2)O3 were studied by impedance spectroscopy at frequencies of 25 Hz-1 MHz at...     

Bi_(3.15)Nd_(0.15)Ti_3O_(12)纳米棒的拉曼和紫外吸收光谱研究

以Bi(NO3)3.5H2O,Nd(NO3)3.6H2O和Ti(OC4H9)4为原料,加入聚乙烯醇(PVA-124),采用水热法在200℃经48 h合成了铋层状钙钛矿结构掺钕钛酸铋(Bi3.15Nd0.85Ti3O12,BNdT)纳米棒,纳米棒直径约10~200 nm,长度达十几微米。利用Raman散射研究了掺钕对钛酸铋晶格结构的影响。掺钕钛酸铋和钛酸铋的Raman光谱表明,Nd取代了类钙钛矿层中A位的Bi,掺Nd改善了BTO的对称性和减小了TiO6八面体的畸变。利用UV-vis光谱研究了BNdT纳米棒的光吸收特性,BNdT纳米棒存在A(400 nm),B(275 nm),C(210 nm),D(196 nm)四个吸收带,分别对应于电子从Bi3+的基态1S0到激发态3P1,3P2,1P1的跃迁和电子从阴离子团TiO6八面体到带正电的Bi3+离子的跃迁。BNdT的带隙为4.3 eV,大的带隙归因于纳米结构的量子尺寸效应。