共查询到19条相似文献,搜索用时 93 毫秒
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采用常见元器件等效实现一个广义忆阻器, 进而制作出一个电路特性可靠的非线性电路, 有助于忆阻混沌电路的非线性现象的实验展示及其所产生的混沌信号的实际工程应用. 基于忆阻二极管桥电路, 构建了一种无接地限制的、易物理实现的一阶有源广义忆阻模拟器; 由该模拟器并联电容后与RC桥式振荡器线性耦合, 实现了一种无电感元件的忆阻混沌电路; 建立了无感忆阻混沌电路的动力学模型, 开展了相应的耗散性、平衡点、稳定性和动力学行为等分析. 结果表明, 无感忆阻混沌电路在相空间中存在分布2个不稳定非零鞍焦的耗散区和包含1个不稳定原点鞍点的非耗散区; 当元件参数改变时, 无感忆阻混沌电路有着共存分岔模式和共存吸引子等非线性行为. 研制了实验电路, 该电路结构简单、易实际制作, 实验测量和数值仿真两者结果一致, 验证了理论分析的有效性. 相似文献
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通过在蔡氏电路的耦合电阻支路中串联一个电感,采用压控忆阻替换蔡氏电路中的蔡氏二极管,提出了一种新颖的五阶压控忆阻蔡氏混沌电路.建立该电路的数学模型,从理论上分析了平衡点及其稳定性的演化过程.特别地,该电路在给定参数下只有一个不稳定的零平衡点,却形成了混沌与周期的非对称吸引子共存的吸引盆,意味着双稳定性的存在.进而利用数值仿真与PSIM电路仿真着重研究了本文电路在不同初始状态下产生的双稳定性现象及其形成机理.PSIM电路仿真结果与数值仿真结果一致,较好地验证了理论分析.借助分岔图、李雅普诺夫指数、相轨图和吸引盆进一步深入探讨了归一化五阶压控忆阻蔡氏系统依赖于系统初始条件的动力学行为.结果表明,该忆阻蔡氏系统在不同的初始条件下能够呈现出混沌吸引子与周期极限环共存的双稳定性现象. 相似文献
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忆阻器是一种具有记忆功能和纳米级尺寸的非线性元件,作为混沌系统的非线性部分,能够提高混沌系统的信号随机性和复杂度.本文基于增广Lü系统设计了一个三维忆阻混沌系统.仅仅通过改变系统的一个参数,该系统能产生单涡巻、双涡卷和四涡巻的混沌吸引子,说明该系统具有丰富的混沌特性.首先对该忆阻混沌系统的基本动力学行为进行了理论分析和数值仿真,如平衡点稳定性、对称性,Lyapunov指数和维数,分岔图和Poincare截面等.同时,建立了模拟该忆阻混沌系统的SPICE(simulation program with integrated circuit emphasis)电路,给出了不同参数下的电路实验相图,其仿真结果与数值分析相符,从而验证了该忆阻混沌系统的混沌产生能力.由于脉冲同步只在离散时刻传递信息,能量消耗小,同步速度快,易于实现单信道传输,因而在混沌保密通信中更具有实用性.因此,本文从最大Lyapunov指数的角度实现了该忆阻混沌系统的脉冲混沌同步,数值仿真证实了忆阻混沌系统的存在性以及脉冲同步控制的可行性,为进一步研究该忆阻混沌系统在语音保密通信和信息处理中的应用提供了实验基础. 相似文献
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具有记忆功能的忆阻器是除电阻器、电容器和电感器之外的第四种基本二端电路元件. 提出了由φ-q平面上的一条三次单调上升的非线性曲线来确定的光滑磁控忆阻器,它有着斜"8"字形的类紧磁滞回线的伏安特性曲线. 采用此忆阻器和负电导构成的有源忆阻器替换蔡氏混沌电路中的蔡氏二极管,导出了一个基于忆阻器的混沌振荡电路. 此外,利用常规的运算放大器和乘法器等元器件给出了有源忆阻器的等效电路实现形式. 理论分析、数值仿真和电路仿真结果一致,均表明忆阻混沌电路的动力学行为依赖于忆阻器的初始状态,在不同初始状态下存在混沌振荡、周期振荡或稳定的汇等不同的运行轨道.
关键词:
忆阻器
混沌电路
初始状态
等效电路 相似文献
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《物理学报》2017,(4)
利用两个磁控忆阻器和一个荷控忆阻器设计了一个六阶混沌电路,并建立了相应电路状态变量的非线性动力学方程.研究了系统的基本动力学特性,平衡点及其稳定性分析表明:该电路具有一个位于忆阻器内部状态变量所构成三维平衡点集,平衡点的稳定性由电路参数和三个忆阻器的初始状态决定.分岔图、Lyapunov指数谱等表明该电路在参数变化情况下能产生Hopf分岔和反倍周期分岔两种分岔行为,以及超混沌、暂态混沌、阵发周期现象等多种复杂的非线性动力学行为.将观察混沌吸引子时关注的电压、电流信号推广到功率和能量信号,观察到了莲花型、叠加型吸引子等奇怪吸引子的产生.并研究了各忆阻器能量信号之间产生吸引子的情况,特别地,当取不同的初始值时,系统出现了共存混沌吸引子和周期极限环与混沌吸引子的共存现象. 相似文献
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由于实际系统中噪声不可避免,噪声使得同步混沌吸引子A变成具有一定生存时间<τ>的准稳态吸引子A′.以加性噪声作用下的二维耦合映射混沌同步系统为例,给定系统实验时间长 度T,解析发现:仅当<τ>>2T时准稳态同步混沌吸引子的筛形吸引域才可被定性观察到;而 当<τ><2T时则不复存在,此时,根据原无噪声时的筛形吸引域特征的不同,筛形域不仅可 以转变成时变筛形结构,还可以转变成分形结构.同时利用数值模拟作了进一步验证.该结果 对于二维耦合映射混沌同步系统具有普遍意义.
关键词:
混沌同步
筛形吸引域
瞬态混沌
耦合映射
加性噪声 相似文献
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Extremely hidden multi-stability in a class of two-dimensional maps with a cosine memristor 下载免费PDF全文
Li-Ping Zhang 《中国物理 B》2022,31(10):100503-100503
We present a class of two-dimensional memristive maps with a cosine memristor. The memristive maps do not have any fixed points, so they belong to the category of nonlinear maps with hidden attractors. The rich dynamical behaviors of these maps are studied and investigated using different numerical tools, including phase portrait, basins of attraction, bifurcation diagram, and Lyapunov exponents. The two-parameter bifurcation analysis of the memristive map is carried out to reveal the bifurcation mechanism of its dynamical behaviors. Based on our extensive simulation studies, the proposed memristive maps can produce hidden periodic, chaotic, and hyper-chaotic attractors, exhibiting extremely hidden multi-stability, namely the coexistence of infinite hidden attractors, which was rarely observed in memristive maps. Potentially, this work can be used for some real applications in secure communication, such as data and image encryptions. 相似文献
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通过对蔡氏忆阻电路的数学建模分析,提出了忆阻电路动力学建模的降维问题.以包含两个磁控忆阻器的忆阻电路为例,进行了忆阻电路降维建模,由此建立了一个三维系统模型.基于该模型,分析了忆阻电路的平衡点和稳定性,研究了电路参数变化时忆阻电路的动力学特性.进一步,对包含两个磁控忆阻器的忆阻电路常规模型的分析结果和其降维模型的分析结果进行了比较.结果表明:忆阻电路降维模型的维数只与电容器的数量和电感器的数量有关,而与忆阻器的数量无关;当电路参数变化时忆阻电路存在分岔模式共存等非线性现象;降维建模降低了系统建模复杂度,有利于系统的动力学特性分析,但消除了忆阻器内部状态变量的初始条件对忆阻电路动力学特性的影响. 相似文献
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《Current Applied Physics》2020,20(4):545-549
The memristive effect become a bio-electronics research focus with the development of sustainable systems and the application of multifunctional electronic devices. In this paper, the natural Lophatherum gracile Brongn (LGB) was employed as active layer to prepare Ag/LGB/fluorine-doped tin oxide (FTO) bio-memristor. Further, different doping ratios nano silver powders (Ag nanoparticle) were doped into LGB functional layers at 0 wt%, 0.2 wt%, 0.33 wt%, 1.0 wt%, 2.0 wt%, 10.0 wt% and 20.0 wt%. It is found that the capacitive-coupled memristive performance of the Ag/Ag-doped-LGB/FTO devices was markedly changed. Finally, it is confirmed that Ag ions transferring and Ag filament formation under the applied voltage are responsible for capacitive-coupled memristive behavior. This research has revealed the realization of capacitive-coupled memristive effect of bio-memristor, which opens a new way to achieve multifunctional performance for electronic device. 相似文献
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Martin Ziegler Karlheinz Ochs Mirko Hansen Hermann Kohlstedt 《Applied Physics A: Materials Science & Processing》2014,114(2):565-570
In nature, the capability of memorizing environmental changes and recalling past events can be observed in unicellular organisms like amoebas. Pershin and Di Ventra have shown that such learning behavior can be mimicked in a simple memristive circuit model consisting of an LC (inductance capacitance) contour and a memristive device. Here, we implement this model experimentally by using an Ag/TiO2?x /Al memristive device. A theoretical analysis of the circuit is used to gain insight into the functionality of this model and to give advice for the circuit implementation. In this respect, the transfer function, resonant frequency, and damping behavior for a varying resistance of the memristive device are discussed in detail. 相似文献
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S. A. Gerasimova A. N. Mikhaylov A. I. Belov D. S. Korolev O. N. Gorshkov V. B. Kazantsev 《Technical Physics》2017,62(8):1259-1265
A physical model of synaptically coupled neuron-like generators interacting via a memristive device has been presented. The model simulates the synaptic transmission of pulsed signals between brain neurons. The action on the receiving generator has been performed via a memristive device that demonstrates adaptive behavior. It has been established that the proposed coupling channel provides the forced synchronization with the parameters depending on the memristive device sensitivity. Synchronization modes 1: 1 and 2: 1 have been experimentally observed. 相似文献
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Kunpeng Cai Zhaoyu He Jingbo Sun Bo Li Ji Zhou 《Applied Physics A: Materials Science & Processing》2013,111(4):1045-1049
A current-controlled memristive one-port was constructed from cobalt monoxide (CoO) using a traditional solid reaction method at 1150 °C in argon atmosphere. Hysteretic current–voltage (I–V) characteristics and resistance switching were investigated in the as-obtained Ag/CoO/Ag cell. Dependences of the I–V loop on voltage range (0 to 10, 11, and 12 V), voltage scan rate (0.1, 1, and 10 V/s), and temperature (323, 373, and 423 K) were reported. A thermistor model for materials with negative temperature coefficient (NTC) was proposed for explanation of the mechanism. An ideal NTC thermistor-based memristive one-port would broaden the applications of memristors and memristive devices. 相似文献