超小型非硅基微机械可调光衰减器

研制了一种新型的超小型电磁驱动微机械可调光衰减器（VOA）.该器件采用电磁驱动器转动硅基微镜改变光路实现可调衰减，在结构上采用了全磁性回复，完全摆脱了通常的弹性回复造成的部件疲劳、零点偏移等器件重复性问题.驱动电压为0～5 V，工作范围0～40 dB，插入损耗小于0.8 dB，回波损耗小于－50 dB.器件重要部件采用微细电火花加工(EDM)技术制作，并应用FEA软件进行了结构优化,对衰减响应进行了详尽的理论分析.该VOA设计体积仅为25×10×7 mm3，可构成阵列应用于波分复用（WDM/DWDM）系统中各信道的动态信号平衡或网络保护.     

一种定向耦合器型高聚物光开关设计

本文提出了一种基于定向耦合器型的高分子聚合物波导光开关设计,其突出特点是极低的波长相关性和耦合区几何尺寸敏感度,可采用橡胶成型工艺(Rubber Molding Process)实现高聚物波导在硅基底上的快速转印成型.利用BPM方法进行了器件的波导结构设计及性能模拟,插入损耗为0.4-0.6 dB,串扰<-32 dB,偏振相关损耗约为0.08 dB,电光系数r33＝14 pm/V时,器件的开关电压为42 V.     

Ku波段低温低噪声放大器设计

本文采用插指电容新结构设计了一个Ku波段低温低噪声放大器(LNA),并通过优化的封装工艺制备了放大器样品,分析了隔离器对LNA性能的影响.在77K温度下测试结果表明,放大器增益约10dB,噪声系数小于2.0dB,反射系数小于-17dB.     

一种MEMS可调光衰减器性能测试及动态响应分析

一种基于微细电火花加工(EDM)技术的非硅基MEMS可调光衰减器,以电磁线圈驱动微反射镜.本文介绍该器件特性测试及动态响应分析,结果表明,驱动电压为0～8 V,工作范围0～35 dB,动态响应时间为2 ms,插入损耗小于0.8 dB,回波损耗小于－50.5 dB.     

一种有效提高薄膜滤光片型密集波分复用器器件性能的方法及其实验研究

对光梳状滤波器加薄膜滤光片型模块制作密集波分复用器(DWDM)的两种应用方案进行了研究,提出了一种提高插损一致性、信道隔离度及减小串扰的结构方案。对新结构方案与常规结构方案进行了理论分析及实验研究,结果表明新结构可将级联次级峰由大于-30dB降至-50dB以下。用16波50GHz的密集波分复用器件拼接进行的实验表明最终器件的插损减小0．869dB,插损一致性减小2．005dB,相邻信道隔离度提高1．004dB,非相邻信道隔离度提高42．903dB．总串扰提高1．68dB。该方案不仅可以应用到光梳状滤波器与薄膜滤光片型模块拼接高性能的超密集波分复用器件．同样也可适用于阵列波导光栅等类型的密集波分复用器件中以降低工艺难度,提高性能指标。     

可调光衰减器的光衰减量线性补偿

设计制成一种数字化电磁驱动微机械MOEMS可调光衰减器.与传统可调光衰减器相比,该器件不仅可实现光衰减量数字化电控调节,并且可通过器件结构的优化设计,对光衰减量的非线性进行补偿,最终得到线性衰减.器件性能测试表明,插入损耗IL＜0.3 dB,偏振相关损耗PDL＜0.1 dB,波长相关损耗WDL＜0.2 dB,衰减范围0～40 dB,回波损耗RL＞50 dB.     

基于量子阱结构的高效磷光有机电致发光器件

采用多重量子阱结构制作了高效红色磷光有机电致发光器件。以4,4'-bis(N-carbazolyl)-1,10-biphenyl (CBP)掺杂bis(1-phenyl-isoquinoline)(Acetylacetonato) iridium(Ⅲ) (Ir(piq)₂(acac))为发光层,4,4'-bis(N-carbazolyl)-1,10-biphenyl(Bphen)为电荷控制层,形成了Ⅱ型双量子阱结构,器件的最大亮度为15 000 cd/m²,最大电流效率为7.4 cd/A,相对于参考器件提高了21%。研究结果表明:以Bphen为电荷控制层形成的Ⅱ型多重量子阱结构能有效地将载流子和激子限制在势阱中,并且使空穴和电子的注入更加平衡,从而提高了载流子复合的几率和器件的效率。     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中,负偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO2高K栅结构的等效氧化层厚度(EOT)为1.3nm,内含原生缺陷密度较低.研究表明,由于所制备的HfN/HfO2高K栅结构具有低的原生缺陷密度,因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征,而非工艺缺陷引起的;进一步研究表明,该HfN/HfO2高K栅结构中观察到的NBTI与传统的SiO2基栅介质p-MOSFET器件中观察到的NBTI具有类似的特征,可以被所谓的反应-扩散(R-D)模型表征: HfN/HfO2栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理,即在负偏置和温度应力作用下,从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的发生,并由此产生了Si+陷阱在Si衬底界面的积累和H原子在介质层内部的扩散,这种Si+陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生.     

基于锥形渐变耦合结构的可扩展多模弯曲波导EI北大核心CSCD

提出了一种基于锥形渐变耦合结构的可扩展多模弯曲波导。该器件利用模式等效折射率匹配原理,通过对称的锥形渐变耦合结构,实现高阶模式与基模的相互转化,完成多模弯曲传输功能。同时,结合时域有限差分方法和粒子群优化算法,优化锥形渐变耦合结构区域,提升器件性能。实验测试结果表明,在1520~1600 nm的波长范围内,当输入模式分别为TE_0、TE_1、TE_2、TE_(3)和TE_(4)时,该器件的插入损耗分别小于1.71 dB、3.04 dB、2.90 dB、3.16 dB和4.00 dB,对应的串扰分别小于-10.60 dB、-11.35 dB、-10.92 dB、-10.35 dB和-11.45 dB。     

一种基于斜光栅辅助的非对称耦合器型光分插复用器

提出了一种基于斜光栅辅助的非对称耦合器型光分插复用器。运用复合波导的三维正交模式,对器件的三种可能的结构进行了理论分析,选出粗波导光栅型结构。利用耦合模理论,模拟了斜光栅的耦合特性并对其倾斜角进行优化设计。通过回波峰值设计法,将器件的工作波长放在波分复用信道之内,回波峰值波长放在波分复用信道之外,使得器件的性能大有提高。模拟结果表明器件的串扰可达到-30 dB,回波损耗可达到-25 dB。同时,器件的关键工艺容差较大,易于批量化生产。当斜光栅的倾斜角度在2.5°到4.5°之间时,器件的串扰低于-28 dB,回波损耗低于-22 dB。     

A dual-channel wavelength multiplexer / demultiplexer based on the restricted-resonance self-imaging effect

The authors propose a high-performance 980 / 1550-nm wavelength multiplexer / demultiplexer based on the restricted-resonance self-imaging effect in a buried-type waveguide system. The device functions either as a multiplexer or a demultiplexer, depending upon the direction of light propagation. Using the modal propagation analysis (MPA), characteristics of the device are investigated. We carried out the design of the device and showed that the device performance can be optimized by appreciate selection of the coupler width. A demultiplexer with an insertion loss of 0.4 dB and contrast of 25.5 dB at wavelength 1550 nm and 32 dB at 980 nm is demonstrated.     

Integrated-Optics Multimode-Interference Wavelength Division Multiplexer for Optical Communication

An integrated-optics multimode-interference 1.3 1.55-mum wavelength division mul tiplexer demultiplexer for optical communication is reported. We have found that the device length can be reduced by adopting a restricted-resonance multimode-interference scheme and a lower beat length ratio. The former allows the device length to be 3 times shorter, and the latter has been found to be able to avoid the wavelength insensitivity of the multimode-interference effects. Modal propagation analysis was used to investigate transmission characteristics of the device. Simulation results show that a demultiplexer with contrasts of 40 dB at 1.3-mum wavelength and 34.5 dB at 1.55 mum can be achieved at an optimum coupler length of 435.5 mum. We have also discussed the fabrication and operation tolerances of the wavelength multiplexer and the effect of the wavelength-dependent refractive index.     

两点法设计平场型EDG波分复用器件

利用两点法(two stigmatic points method)对平场型蚀刻衍射光栅(EDG)波分复用器件进行了优化设计.与传统EDG相比,该方法以较小的性能损失为代价,极大简化了制作工艺.通过标量波动衍射理论对16通道的该型器件进行了数值模拟,结果表明:在用光探测器陈列接收的情况下,额外的功率损耗约为1dB,信道间的不均匀性小于0.3dB,串绕小于-30dB.     

8-信道MMI阵列波导光栅复用/解复用器的研制

本文首先详细分析了基于自镜象效应的MMIDMUX器件的基本工作原理,在此基础上,在GaAs/GaAlAs系材料上完成了对8信道MMIDMUX的具体设计.该器件的输入、输出单模波导和SIE多模波导采用离散谱折射率法进行优化设计,最后获得了当输入、输出单模波导宽度为3μm、SIE多模波导宽度和长度分别为40μm和1731.45μm时,该器件对8信道波长的隔离度为～26dB,理论传输损耗为～0.24dB.     

InP-based 1.3/1.55 μm wavelength demultiplexer with multimode interference and chirped grating

We propose a novel 1.3/1.55 m wavelength demultiplexer for integration with lasers and detectors on the InP material system. A chirp grating is placed inside a multimode interference (MMI) structure to shorten the device length and increase wavelength tolerance. The simulation using the bi-directional beam propagation method proves that the demultiplexer can have very low insertion loss and high isolation ratio. The approach of grating fabrication is also described.     

硅基槽式微环谐振腔型偏振解复用器全矢量分析

提出一种紧凑型偏振解复用器, 其中两条常规硅基波导作为输入/输出信号通道, 居于其中的槽式微环谐振腔用于偏振态/波长选择组件. 采用全矢量频域有限差分法详细分析了硅基常规及槽波导的模式特性, 结果发现其横磁模的模场布及其有效折射率相似, 而其横电模相应的特性则差异明显, 结果输入横磁模能够在谐振工作波长下从下路端口输出, 而输入横电模与微环耦合可以忽略, 直接从直通端口输出, 从而实现两偏振态的高效分离. 采用全矢量时域有限差分法详细分析了该偏振解复用器的光波传输特性, 结果表明, 当微环半径为3.489 μm时, 在1.55 μm工作波长下, 横磁模与横电模的消光比与插入损耗分别为 ～ 26.12 (36.67) dB与 ～ 0.49 (0.09) dB. 另外, 论文详细讨论了器件关键结构参数的制作容差, 并给出了输入模场在器件中的传输演变情况.     

基于Si3N4/SiNx/Si3N4三明治结构的偏振无关1×2多模干涉型解复用器的设计

提出一种基于Si3N4/SiNx/Si3N4三明治结构多模干涉波导的偏振无关1×2解复用器,用于分离1310和1550 nm两个波长.通过合理选择三明治结构中间层SiNx的折射率,可以调节同一波长两个正交偏振态的拍长相等,实现偏振无关;根据多模干涉原理,通过合理选择多模干涉波导的长度与宽度,可以使两个波长的输出像点分别成正像和反像,实现解复用功能.运用三维有限时域差分法进行建模仿真,对结构参数进行优化,并对器件关键结构参数的制作容差进行了分析.结果表明:该器件多模干涉波导的尺寸为4.6μm×227.7μm,插入损耗低至0.18dB,输出波导间的串扰低至–25.7dB, 3dB带宽可达60 nm.另外,本文提出的器件采用Si3N4/SiO2平台,可有效减小波导尺寸,提高集成度,不仅实现了偏振无关,而且结构紧凑、损耗低,在未来的集成光路中具有潜在的应用价值.     

High-performance and fabrication friendly polarization demultiplexer

A compact and fabrication friendly polarization demultiplexer (P-DEMUX) is proposed and characterized to enable wavelength-division-multiplexing and polarization-division-multiplexing simultaneously. The proposed structure is composed of a polarization-selective microring resonator in ultrathin waveguide and two bus channels in the silicon nitride-silica-silicon horizontal slot waveguides. In the slot waveguide, the transverse electric (TE) mode propagates through the silicon layer, while the transverse magnetic (TM) mode is confined in the slot region. In the designed ultra-thin waveguide, the TM mode is cut-off. The effective indexes of the TE modes for ultrathin and slot waveguides have comparable values. Thanks for these distinguishing features, the input TE mode can be efficiently filtered through the ultra-thin microring at the resonant wavelength, while the TM mode can directly output from the through port. Simulation results show that the extinction ratio of the proposed P-DEMUX for TE and TM modes are 33.21 dB and 24.97 dB, and the insertion losses are 0.346 dB and 0.324 dB, respectively, at the wavelength of 1551.64 nm. Furthermore, the device shows a broad bandwidth ($>100$ nm) for an extinction ratio (ER) of $>20$ dB. In addition, the proposed P-DEMUX also has a good fabrication tolerance for the waveguide width variation of $-20$ nm$\le \Delta w_{\rm g}\le 20$ nm and the microring width variation of $-20$ nm$\le \Delta w_{\rm r}\le $20 nm for a low insertion loss of $<0.75$ dB and low ER of $<-18$ dB.     

Multimode interference wavelength multi/demultiplexer for 1310 and 1550 nm operation based on BCB 4024-40 photodefinable polymer

A 1310 and 1550 nm coarse wavelength multi/demultiplexer based on benzocyclobutene (BCB 4024-40) polymer is demonstrated for the first time. The device is designed based on a combination of general interference and paired interference mechanisms of multimode interference (MMI). It is fabricated on BK7 glass substrate with a thin layer of SiO₂ as cover. A cost effective chemical etching technique is used in the fabrication process to take advantage of the photosensitive nature of the polymer. The device length was significantly reduced by adopting the restricted multimode interference scheme, lower beat length ratio and cascaded MMI couplers. The measured crosstalk at 1310 nm was 14.4 dB and at 1550 nm was 20.6 dB. The measured insertion loss is around 3.2-3.5 dB for both ports.     

Polarization-Insensitive All-Optical Time-Division Demultiplexer Constructed with a Nonlinear Loop Interferometer

A polarization-insensitive 40-Gb/s time-division demultiplexer was demonstrated in a polarization-diversity loop configuration. The power penalty was measured to be 2.3 dB at a bit error rates of 10-9 for 10 Gb/s output signals.