二维层状材料FePSe3的高压物性

FePSe₃在高压下会出现半导体到金属的转变、超导电性以及高自旋到低自旋的转变等多种有趣的物理现象，但目前对其在高压下的晶体结构分析仍以理论研究为主，结构的不确定阻碍了对其物理性质的深入研究。为此，利用金刚石对顶砧结合高压拉曼光谱、高压同步辐射X射线衍射以及高压电输运测量，对FePSe₃在高压下的行为进行了研究。结果表明，FePSe₃在低于60.0 GPa的压力范围内经历了3次结构相变，完成了LP—HP1—HP2—HP3的转变。首次在实验上观测到FePSe₃的高压新相HP2和HP3，并给出其可能的空间对称群。HP2相和HP3相具有超导电性，超导温度随压力的升高而降低，致使超导相图呈现“穹顶”状。研究结果为进一步厘清FePSe₃的压致相变行为提供了重要的实验支撑。     

三重兼并费米子拓扑半金属MoP高压超导相的低压截获

碳化钨结构的三重兼并费米子拓扑半金属MoP高压下发生超导转变，然而，高压超导相能否在低压甚至常压截获尚不清楚.本文对两个密封于金刚石对顶砧中的MoP高压超导相在室温条件下进行快速卸压，通过测量低温电阻对温度的依赖关系，验证能否在低压甚至常压截获高压超导相.实验结果表明：初始压力61.5 GPa的样品#1,超导电性可截获的最低压力为44.2 GPa;初始压力95.0 GPa的样品#2,超导电性可截获的最低压力为3.5 GPa.     

高压下Nb3Sn单晶的超导相转变

研究高压下Nb₃Sn单晶的超导相转变行为对探究力学变形诱导的材料超导性能弱化机理有重要意义。通过分子动力学模拟研究了Nb₃Sn单晶在高压下的原子尺度变形和晶体结构变化,在此基础上,建立了高压下Nb₃Sn单晶的超导相转变模型,模型预测结果与实验观测结果吻合较好。结果表明:静水压作用下,Nb₃Sn单晶体发生了明显的晶格畸变,但晶体结构保持完整;压力诱导的费米面上电子态密度的变化在高压下Nb₃Sn单晶体超导相转变中起主导作用。所得研究结果为研究高压下Nb₃Sn多晶体以及复合多晶体的相转变行为奠定了基础,同时有助于进一步认识Nb₃Sn材料超导性能的弱化机理。     

“111”铁基超导体系的发现及压力效应研究

2008年发现的铁基超导体引发了全球超导研究的热潮。在本研究小组发现的铁基“111”体系的基础上,重点介绍“111”体系铁基超导体的压力效应,包括:“111”体系的3个组元LiFeAs、LiFeP、NaFeAs的超导转变随压力的演化;运用压力调控,获得“111”体系的最高超导转变温度;结合同步辐射技术,发现压力调控的“111”型铁基超导体的等结构演化以及对超导起关键作用的As-Fe-As键长和键角与超导转变温度的关联。     

第二类拓扑外尔半金属WP2高压超导相的常压截获

第二类拓扑外尔半金属WP₂高压下发生超导转变,然而,高压超导相能否在常压截获还没有相关报道.本文对密封于金刚石对顶砧中的WP₂高压超导相在室温条件下快速卸压至不同压强,原位测量电阻-温度曲线,验证能否在常压截获高压超导相.研究表明：WP₂的高压超导相可以在常压截获,从而提供了一个通过角分辨光电子能谱和扫描隧道谱探寻马约拉纳零能模的拓扑超导体材料平台.     

三聚氰胺(C_3N_6H_6)的高压Raman与压致结构相变研究

本文在8 7GPa压力范围内研究了三聚氰胺(C3N6H6)的高压原位Raman光谱。通过内、外Raman活性模的压致效应,发现在1 5GPa和6 0GPa压力下该分子晶体发生了压致结构相变。用空间群相关原理确认在1 5GPa压力下它从单斜相转变为三斜相;在6 0GPa压力下又发生了另一次结构相变。然后在室温高压条件下对三聚氰胺进行了原位同步辐射能量散射x-ray衍射实验(EDXD),在14 7GPa压力范围内,观察到常压下为单斜晶系的三聚氰胺经历了两次压致结构相变。在1 3GPa下,三聚氰胺分子晶体从单斜相转变为三斜相;在8 2GPa又转变为正交相。本实验结果为利用三聚氰胺碳氮有机分子晶体高温高压合成超硬C3N4共价晶体的研究提供了重要信息。     

铁磁形状记忆合金Mn2NiGa中应力诱发马氏体相的结构和磁性

采用金刚石对顶砧高压装置（DAC）和同步辐射X射线光源法,对Heusler类型的磁性形状记忆合金Mn₂NiGa的结构进行了原位高压X射线衍射测量,并对卸载后的受压样品进行了磁测量.实验观察到材料在室温下分别在0.77 GPa和20 GPa压力下发生了两次不可逆结构相变：马氏体相变和两种不同马氏体间的等结构相变.同时加压使马氏体结构中产生了大量的缺陷,造成了严重的晶格畸变,致使马氏体结构的矫顽力提高了近10倍,达到204 kA/m.结果发现,加压处理造成样品马氏体相饱和磁化强度的大幅度 关键词： 铁磁形状记忆合金 2NiGa')" href="#">Mn₂NiGa 高压 同步辐射     

无定形硒的高压同步辐射研究

采用原位高压同步辐射X射线衍射技术, 利用金刚石对顶砧(DAC)装置产生高压, 测定了无定形硒在室温下、74.3GPa的压力范围内的同步辐射X射线衍射谱. 在实验压力范围内, 发现无定形硒在10GPa到11Gpa压力范围内发生了压致结晶变化, 其结晶后的产物为六角晶体与一种新的高压金属相^{[6]<\sup>的混合体. 值得说明的是该高压金属结构一直到42GPa时仍稳定存在, 到42GPa以后才转变成正交结构. 分别观察到了在30GPa和60GPa左右发生的从单斜相到正交相和从正交相到菱方相的结构相变, 这分别与Mao等人[1]<\sup>和Akahama等人[3]<\sup>从六角结构硒晶体出发得到的实验结果相同.}     

两种氧化物超导体在高压下的行为

 本文为两个单相超导氧化物体系NdBa₂Cu₃O_x和(Bi,Pb)₂Sr₂Ca₂Cu₃O_y分别做了低温、常温和高温下的高压观察。发现超导转变温度均随压力的增加而提高；在两个体系中都观察到1.0 GPa附近正常态电阻的突增，它们都对应于T_c增加的变缓。对NdBa₂Cu₃O_x所做的高压DTA显示，从高温四方相到超导正交相的转变为压力提前，表明高压对超导相结构的稳定性产生有利影响。     

压力诱导CsCu2I3不可逆非晶化和金属化

近年来，压力作用下卤化物钙钛矿的结构和性质引起了科学家们的极大兴趣。然而，对于高压下钙钛矿非晶相的潜在性质和应用仍缺乏深入系统的研究。利用金刚石对顶砧，结合原位高压同步辐射X射线衍射、原位高压拉曼光谱、高压变温电学测量技术，对准一维卤化物钙钛矿CsCu₂I₃在高压下的非晶化行为进行了系统的研究。结果表明：CsCu₂I₃在35.9 GPa以上开始出现可逆的压致非晶化，形成低密度的非晶态Ⅰ相；在更高压力下，发生由低密度到高密度的非晶转变，形成非晶态Ⅱ相，并可以截获至常压条件。进一步的电学实验表明，136.0 GPa时，CsCu₂I₃发生了由绝缘体向金属相的转变，对高压下金属相的非晶态进行卸压电阻测试，发现其金属特性至少可稳定至90.0 GPa。这些结果为进一步探索非晶钙钛矿的潜在性质和应用提供了重要的科学依据。     

Superconductivity of topological matters induced via pressure

By applying pressure on the topological insulator Bi₂Te₃ single crystal, superconducting phase was found without a crystal structure phase transition. The new superconducting phase is under the pressure range of 3 GPa to 6 GPa. The high pressure Hall effect measurements indicated that the superconductivity caused by bulk hole pockets. The high pressure structure investigations with synchrotron X-ray diffraction indicated that the superconducting phase is of similar structure to that of ambient phase structure with only slight change with lattice parameter and internal atomic position. The topological band structures indicate the superconducting phase under high pressure remained topologically nontrivial. The results suggested that topological superconductivity can be realized in Bi₂Te₃ due to the proximity effect between superconducting bulk states and Diractype surface states. We also discussed the possibility that the bulk state could be a topological superconductor.     

Majorana modes at the ends of superconductor vortices in doped topological insulators

Recent experiments have observed bulk superconductivity in doped topological insulators. Here we ask whether vortex Majorana zero modes, previously predicted to occur when s-wave superconductivity is induced on the surface of topological insulators, survive in these doped systems with metallic normal states. Assuming inversion symmetry, we find that they do but only below a critical doping. The critical doping is tied to a topological phase transition of the vortex line, at which it supports gapless excitations along its length. The critical point depends only on the vortex orientation and a suitably defined SU(2) Berry phase of the normal state Fermi surface. By calculating this phase for available band structures we determine that superconducting p-doped Bi(2)Te(3), among others, supports vortex end Majorana modes. Surprisingly, superconductors derived from topologically trivial band structures can support Majorana modes too.     

Substitutional alloy of Bi and Te at high pressure

Being a best known thermoelectric material and a topological insulator at ambient condition, magic bismuth telluride (Bi2Te3) under pressure transforms into several superconducting phases, whose structures remain unsolved for decades. Here, we have solved the two long-puzzling low high-pressure phases as seven- and eightfold monoclinic structures, respectively, through particle-swarm optimization technique on crystal structure prediction. Above 14.4 GPa, we experimentally discovered that Bi2Te3 unexpectedly develops into a Bi-Te substitutional alloy by adopting a body-centered cubic disordered structure stable at least up to 52.1 GPa. The continuously monoclinic distortion leads to the ultimate formation of the Bi-Te alloy, which is attributed to the Bi→Te charge transfer under pressure. Our research provides a route to find alloys made of nonmetallic elements for a variety of applications.     

拓扑绝缘体/超导体异质结中的近邻效应

拓扑超导体自身具有对量子退相干天然的免疫性以及可编织性,这使得它在现代量子计算领域中受到了越来越多的重视,并且成为了下一代计算技术中最有希望的候选者之一。由于拓扑超导态在固有拓扑超导体中相当罕见,因此,当前大部分实验上的工作主要集中在由 s 波超导体与拓扑绝缘体之间通过近邻效应所诱导的拓扑超导体上。本论文中,我们回顾了基于拓扑绝缘体/超导体异质结的拓扑超导体的研究进展。在理论上,Fu 和 Kane 提出,通过近邻效应将 s 波超导体的能隙引入到拓扑绝缘体,可以诱导出拓扑超导电性。在实验上,我们也回顾了一些不同体系中的拓扑超导近邻效应的研究进展。文章的第一部分,我们介绍了一些异质结,包括：三维拓扑绝缘体 Bi2Se3和 Bi2Se3 与 s 波超导体NbSe2 以及 d 波超导体 Bi2Sr2CaCu2O8+δ 的异质结,拓扑绝缘体 Sn1−xPbxTe 与 Pb 的异质结,二维拓扑绝缘体 WTe2 与NbSe2 的异质结。此外,还介绍了 TiBiSe2 在 Pb 上的拓扑绝缘近邻效应。另一部分中,我们对基于拓扑绝缘体的约瑟夫森结进行了回顾,包括著名的基于 Fu-Kane 体系的拓扑绝缘体约瑟夫森结,以及基于约瑟夫森结的超导量子干涉器件。     

Robust surface state of intrinsic topological insulator Bi2Te2Se thin films: a first-principles study

Bi(2)Te(2)Se, a ternary tetradymite compound, has recently been identified to be a three-dimensional topological insulator. In this paper, we theoretically study the electronic structures of bulk and thin films of Bi(2)Te(2)Se employing spin-orbit coupling (SOC) self-consistently with density-functional theory. It is found that SOC plays an important role in determining the electronic properties of Bi(2)Te(2)Se. A finite bandgap opens up in the surface states of Bi(2)Te(2)Se thin films due to the hybridization of the top and bottom surface states of films. The intrinsic Bi(2)Te(2)Se thin films of three or more quintuple layers exhibit a robust topological nature of electronic structure with the Fermi energy intersecting the Dirac cone of the surface states only once between time-reversal-invariant momenta. These characteristics of Bi(2)Te(2)Se are similar to the topological behavior of Bi(2)Te(3), promising a variety of potential applications in nanoelectronics and spintronics.     

Topological Superconductivity in Cu(x)Bi(2)Se(3)

A topological superconductor (TSC) is characterized by the topologically protected gapless surface state that is essentially an Andreev bound state consisting of Majorana fermions. While a TSC has not yet been discovered, the doped topological insulator Cu(x)Bi(2)Se(3), which superconducts below ～3 K, has been predicted to possess a topological superconducting state. We report that the point-contact spectra on the cleaved surface of superconducting Cu(x)Bi(2)Se(3) present a zero-bias conductance peak (ZBCP) which signifies unconventional superconductivity. Theoretical considerations of all possible superconducting states help us conclude that this ZBCP is due to Majorana fermions and gives evidence for a topological superconductivity in Cu(x)Bi(2)Se(3). In addition, we found an unusual pseudogap that develops below ～20 K and coexists with the topological superconducting state.     

HIGH-PRESSURE SYNTHESIS OF MgB2 SUPER-CONDUCTOR WITH Tc ABOVE 39 K

We report on the high-pressure synthesis and superconductivity of MgB₂ intermetallic compounds. The compounds have been obtained through high-pressure sintering of the mixtures of magnesium and boron fine powders under 5.0 GPa and at ～1000℃ for 30 min. Magnetic measurements using a SQUID magnetometer show the sharp bulk superconducting transition above 39 K; the four-probe dc resistivity measurements indicate the highly-conductive normal state and sharp superconducting transition. The results highlight that high-pressure synthesis would be a promising way to promote the studies of this new kind of intermetallic superconductors.     

Bi(110)薄膜在NbSe_2衬底上的扫描隧道显微镜研究

二维拓扑绝缘体因其特殊的能带结构带来的新奇物理性质,成为近年来凝聚态物理的研究热点.尤其是在引入超导电性之后,二维拓扑绝缘体中可能存在马约拉纳费米子(Majorana fermion),因此在量子计算方面具有重大应用前景.在Bi(111)薄膜被证实为二维拓扑绝缘体之后, Bi(110)薄膜引起了广泛关注,然而其拓扑性质还存在争议.本文利用分子束外延技术在室温低生长速率环境下成功制备出了高质量的单晶Bi(110)薄膜.通过扫描隧道显微镜测量发现,薄膜以约8个原子层厚度为分界,从双层生长转变为单层生长模式.结合隧道谱测量发现,在NbSe_2衬底上生长的Bi(110)薄膜因为近邻效应而具有明显的超导性质,但并未显示出拓扑边缘态的存在.此外,对薄膜中特殊的量子阱态现象也进行了讨论.