首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到19条相似文献,搜索用时 93 毫秒
1.
采用等离子体预处理技术和优化的金刚石薄膜沉积工艺,以期为金刚石薄膜涂层工具的制备开发一种新的实用易行的表面预处理方法。等离子体预处理和金刚石薄膜沉积都在自行研制的热丝CVD系统中进行的。等离子体预处理是在脱炭气氛中进行,基体温度控制在硬质合金的再结晶温度范围内,处理总时间为2h。  相似文献   

2.
采用脉冲紫外激光(XeCl,308nm)表面消融预处理方法以硬质合金为衬底制备了金刚石涂层刀具。利用压痕法对涂层结合强度进行了测试,得到了最佳预处理工艺条件。采用碳化硅增强铝合金材料对制备的金刚石涂层刀具进行了实际切削性能实验。实验结果表明:脉冲紫外激光表面消融预处理方法的采用对刀具的金刚石薄膜涂层附着强度的提高有很大的帮助。  相似文献   

3.
 采用脉冲紫外激光(XeCl,308nm)表面消融预处理方法以硬质合金为衬底制备了金刚石涂层刀具。利用压痕法对涂层结合强度进行了测试,得到了最佳预处理工艺条件。采用碳化硅增强铝合金材料对制备的金刚石涂层刀具进行了实际切削性能实验。实验结果表明:脉冲紫外激光表面消融预处理方法的采用对刀具的金刚石薄膜涂层附着强度的提高有很大的帮助。  相似文献   

4.
采用第一性原理方法研究了氧原子在CVD金刚石涂层表面吸附形成的两种氧掺杂结构的差异及脱附CO的难易程度.仿真计算结果表明:氧原子在金刚石表面顶位和桥位吸附形成C=O羰结构和C-O-C醚结构,改变与其直接成键的局部金刚石结构;C-O-C结构吸附能比C=O结构大,其结构更加稳定;C=O结构断键脱附形成CO的能垒比C-O-C结构更低,CVD金刚石涂层表面脱附CO主要是以C=O断键形成;氢终止表面能够增强碳原子之间成键,提高C=O脱附的能垒,而氧终止表面作用相反,降低脱附能垒.  相似文献   

5.
金刚石膜探测器研制   总被引:1,自引:0,他引:1       下载免费PDF全文
采用直流电弧等离子喷射(DC arc plasma jet)CVD(chemical vapour deposition)工艺制成的金刚石薄膜,研制成功MSM(metal-semiconductor-metal)型CVD金刚石脉冲辐射探测器.对制作的金刚石薄膜材料及探测器有关性能进行了测量,结果表明,采用Raman shift<4.5cm-1的金刚石薄膜制成的探测器,可满足亚纳秒脉冲辐射探测的要求.由于其独特的物理性能,在制作成本合理的情况下,在脉冲辐射测量中可取代Si-PIN探测器. 关键词: CVD 金刚石薄膜 辐射探测器  相似文献   

6.
李荣斌 《物理学报》2009,58(2):1287-1292
采用化学气相沉积(CVD)技术,以高温高压(HTHP)合成的(100)金刚石和p型(100)Si为衬底制备了硫掺杂和硼-硫共掺杂金刚石薄膜,利用原子力显微镜(AFM)、扫描隧道显微镜(STM)及隧道电流谱(CITS)等手段分析同质和异质外延CVD掺杂金刚石薄膜的结构和性能.结果表明:异Si衬底上CVD金刚石的形核密度低,薄膜表面比较粗糙,粗糙度达到18.5nm;同质HTHP金刚石衬底上CVD金刚石薄膜晶粒尺寸约为10—50nm,表面平整,表面粗糙度为1.8nm.拉曼测试和电阻测量的结果显示,在HTHP金刚 关键词: 金刚石 掺杂 外延  相似文献   

7.
利用磁控溅射制备了各种工艺参数不同的微球表面金属Mo涂层样品,并通过白光干涉仪和扫描电子显微镜对样品的表面及剖面进行了系统的测试分析。分别探究了溅射工作气压和沉积制备时间对微球表面Mo涂层表面形貌以及结晶质量的影响规律。结果表明通过优化工艺参数可制备微球直径约为800μm、涂层厚度为3.5μm到14.1μm、厚度均匀性良好的微球表面Mo涂层。Mo涂层中的晶粒呈现出柱状结构致密堆积在一起,且随涂层的厚度增加晶粒间空隙增大。  相似文献   

8.
用表面生长CVD金刚石的石墨合成高压金刚石   总被引:1,自引:0,他引:1       下载免费PDF全文
 用热灯丝CVD方法在多晶石墨衬底表面制备CVD金刚石颗粒,并用这种石墨在高温高压条件下采用六面顶压机合成出高压金刚石。初步实验结果表明:采用其表面生长CVD金刚石颗粒的石墨合成高压金刚石,可以提高金刚石的转化率和降低合成压力。  相似文献   

9.
采用电弧离子镀技术(AIP)在YW2合金基体表面制备了TiAlN涂层,通过化学方法退除基体上的涂层,分析了硬质合金表面退除涂层后和镀覆涂层前成分和元素存在形态的变化。发现当样品在30%H2O2、草酸钾COOK(1.5mol·L-1)、缓蚀剂葡萄糖酸钠GA和NaOH,VNaOH溶液∶V30%H2O2∶VCOOK溶液=1∶1∶1,45℃时,45min可以退除涂层,肉眼未观察到基体表面受腐蚀。涂层退除后样品表面光亮,呈现合金未镀覆涂层前颜色。通过对退镀后YW2基体和基体镀覆涂层前的表面XPS定性及定量分析发现,退除涂层后,基体表面W元素结合能和N元素主峰结合能与XPS结合能与参照表上对应结合能变化很小,元素的价态没有发生变化;镀覆TiAlN涂层时扩散到合金浅表层的Al,Ti,N元素,造成表面Al,Ti,N元素含量较镀覆涂层前增加,结合能位置偏移,形成AlN和TiN,有利于重新镀覆的涂层与合金基体的结合。  相似文献   

10.
简小刚  陈军 《物理学报》2015,64(21):216701-216701
采用基于密度泛函理论的第一性原理平面波赝势方法, 研究了硬质合金刀具基底黏结相Co元素对金刚石涂层膜基界面结合强度的影响机理. 借助Materials Studio软件建立了WC/Diamond膜基界面模型和WC-Co/Diamond膜基界面模型, 采用CASTEP仿真软件计算了WC/Diamond膜基界面模型和WC-Co/Diamond膜基界面模型的最优稳定结构. 通过仿真计算, 获得了WC/Diamond膜基界面模型和WC-Co/Diamond膜基界面模型的界面结合能、电荷密度图及Mulliken重叠布居数. 经对比分析后发现, 硬质合金基底中磁性元素Co的存在能转移金刚石涂层膜基界面处W元素及C元素的电荷, 从而使膜基界面处的原子因失电荷而相斥, 这直接导致了金刚石涂层膜基界面间距变大, 使得金刚石涂层膜基界面结合能降低.  相似文献   

11.
Diamond films deposited on tungsten carbide can lead to major improvements in the life and performance of cutting tools. However, deposition of diamond onto cemented tungsten carbide (WC-Co) is problematic due to the cobalt binder in the WC. This binder provides additional toughness to the tool but results in poor adhesion and low nucleation density of any diamond film. A two-step chemical etching pretreatment (Murakami reagent and Caro acid, (MC)-pretreatment) and a boronization pretreatment have both been used extensively to improve adhesion of CVD diamond film on WC-Co substrates. Here we discuss the applicability of MC-pretreatment for a range of Co-containing WC-Co substrates, and demonstrate a controlled synthesis process based on liquid boronizing pretreatment for obtaining smooth and dense micro- or nano-crystalline diamond films on high Co-containing WC-Co substrates. Substrate treatments and deposition parameters were found to have major influences on the smoothness, structure and quality of the diamond films. The best quality diamond films were achieved under conditions of relatively high substrate temperature (Ts) and the best adhesion was achieved at Ts = 800 °C.  相似文献   

12.
To evaluate the effect of substrate morphology on the adhesion of diamond film, two types of substrate morphology of molybdenum (Mo) were compared. The two morphology types were formed by polishing a Mo substrate with SiC abrasive paper along one direction (anisotropic morphology) and by polishing the Mo substrate with diamond powder in a random direction (isotropic morphology).Ultrasonic cavitation tests were conducted to evaluate the adhesion of the diamond films on these Mo substrates. In the case of low surface roughness, there was very little difference between the effects of SiC abrasive paper polishing and diamond powder polishing. In the case of high surface roughness, the adhesion of the diamond film on the SiC paper polished Mo substrate was larger than that of the diamond film on the diamond powder polished Mo substrate. Detachment of the diamond film from the SiC paper polished Mo substrate progressed along the polishing direction; while detachment of the diamond film from the diamond powder polished Mo substrate progressed in a random direction. It was thought that the detachment of the diamond film from a Mo substrate having an anisotropic polishing trace was suppressed because the anisotropic grooves restricted the formation of connections between the points of detachment at right angles to the groove direction. Therefore, the anisotropic surface morphology of the Mo substrate is effective for improving the adhesion of diamond film.  相似文献   

13.
Q.P. Wei  Z.M. Yu  L. Ma  J. Ye 《Applied Surface Science》2009,256(5):1322-1328
A tungsten-carbide gradient coating (WCGC) was prepared by reactive sputtering as an intermediate layer on the cemented carbide, WC-13 wt.% Co, substrate to improve the nucleation, smoothness and adhesion of diamond film. The diamond film was deposited by hot filament chemical vapor deposition (HFCVD). The effects of the substrate temperature on the WCGC and the diamond film were investigated. The characterization of the WCGC and the diamond films was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), micro-Raman spectroscopy and Rockwell hardness indentation. It is found that the WCGC plays an important role in improving the nucleation, smoothness and adhesion of diamond film; and the diamond films exhibit better quality and adhesion as substrate temperature increases during the CVD processes.  相似文献   

14.
The tribological behaviors of diamond and diamond-like carbon (DLC) films play a major role on their machining and mechanical applications. In this study, diamond and diamond-like carbon (DLC) films are deposited on the cobalt cemented tungsten carbide (WC-Co) substrate respectively adopting the hot filament chemical vapor deposition (HFCVD) technique and the vacuum arc discharge with a graphite cathode, and their friction properties are evaluated on a reciprocating ball-on-plate tribometer with counterfaces of silicon nitride (Si3N4) ceramic, cemented tungsten carbide (WC) and ball-bearing steel materials, under the ambient air without lubricating condition. Moreover, to evaluate their cutting performance, comparative turning tests are conducted using the uncoated WC-Co and as-fabricated CVD diamond and DLC coated inserts, with glass fiber reinforced plastics (GFRP) composite materials as the workpiece. The as-deposited HFCVD diamond and DLC films are characterized with energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), X-ray diffraction spectroscopy (XRD), Raman spectroscopy and 3D surface topography based on white-light interferometry. Furthermore, Rocwell C indentation tests are conducted to evaluate the adhesion of HFCVD diamond and DLC films grown onto WC-Co substrates. SEM and 3D surface topography based on white-light interferometry are also used to investigate the worn region on the surfaces of diamond and DLC films. The friction tests suggest that the obtained friction coefficient curves that of various contacts exhibit similar evolution tendency. For a given counterface, DLC films present lower stable friction coefficients than HFCVD diamond films under the same sliding conditions. The cutting tests results indicate that flank wear of the HFCVD diamond coated insert is lower than that of DLC coated insert before diamond films peeling off.  相似文献   

15.
通过对Al2O3陶瓷衬底进行碳离子预注入,大大降低了Al2O3陶瓷衬底上金刚石薄膜的应力,且金刚石薄膜中的压应力随碳离子注入剂量的增加而线性下降.通过对Al2O3陶瓷衬底注入前后的对比分析表明,高能量的碳离子注入Al2O3陶瓷衬底以后,并没有产生过渡层性质的新相,而是大量累积在Al2O3晶格的间隙位,使Al2O3晶格发生畸变.而且,随着碳离子注入剂量的增加,Al2O3基体内晶格畸变加剧,注入层残余压应力也随之上升.当金刚石薄膜沉积以后,在降温的过程中衬底这部分残余应力得到释放,从而部分弛豫了金刚石薄膜中的 关键词: 金刚石薄膜 应力 离子注入 Al2O3陶瓷  相似文献   

16.
The promising applications of the microwave plasmas have been appearing in the fields of chemical processes and semiconductor manufacturing. Applications include surface deposition of all types including diamond/diamond like carbon (DLC) coatings, etching of semiconductors, promotion of organic reactions, etching of polymers to improve bonding of the other materials etc. With a 2.45 GHz. 700 W, microwave induced plasma chemical vapor deposition (CVD) system set up in our laboratory we have deposited diamond like carbon coatings. The microwave plasma generation was effected using a wave guide single mode applicator. We have deposited DLC coatings on the substrates like stainless steel, Cu-Be, Cu and Si. The deposited coatings have been characterized by FTIR, Raman spectroscopy and ellipsometric techniques. The results show that we have achieved depositing ∼95% sp3 bonded carbon in the films. The films are unform with golden yellow color. The films are found to be excellent insulators. The ellipsometric measurements of optical constant on silicon substrates indicate that the films are transparent above 900 nm.  相似文献   

17.
The influence of cobalt on the phase composition and adhesion strength of polycrystalline diamond coatings has been studied using scanning electron microscopy, Raman spectroscopy, and X-ray microanalysis. The coatings have been deposited on WC–Co hard alloy substrates in glow discharge plasma. It has been found that the catalytic amorphization of carbon only takes place during the direct synthesis of the diamond coating, when the cobalt vapor pressure over the substrate is high and the cobalt-related degradation of the synthesized diamond is absent.  相似文献   

18.
Diamond films were successfully synthesized on aluminum nitride(AlN) ceramic substrates by hot-filament chemical vapor deposition (HFCVD) method. The thermal conductivity of the diamond film/aluminum nitride ceramic (DF/AlN) composites was studied by photothermal deflection (PTD) technique. It has reached 2.04 W/cm K, 73% greater than that of AlN ceramic. Compared with the measurement of scanning electron microscopy (SEM) and Raman spectroscopy, the influence of diamond films on the thermal conductivity of the composites was pointed out. The adhesion and the stresses were also studied. The unusual stability and very good adhesion of the diamond film on AlN ceramic substrate obtained is attributed to the formation of aluminum carbide. Received: 24 March 1998 / Accepted: 8 March 1999 / Published online: 5 May 1999  相似文献   

19.
N离子注入对金刚石膜场发射特性的影响   总被引:4,自引:0,他引:4       下载免费PDF全文
不同剂量的N离子被注入到化学气相沉积金刚石膜内,研究了表面结构及场发射特性的变化.Raman谱和x射线光电子能谱分析表明,N离子的注入破坏了金刚石膜表面原有的sp3结构,并在膜内形成大量的sp2 C—C 和sp2 C—N 键.样品的场发射测试显示N离子的注入显著提高了金刚石膜场发射特性,膜的场发射阈值电场从注入前的18 V/μm下降到注入后的4 V/μm.金刚石膜场发射特性的提高归因于N离子注入后膜内sp2 C键含量的增加和体内缺陷带的形成,这些变化能改变膜的表面功函数,提高Feimi能级,降低电子隧穿表面的能量势垒. 关键词: 场致电子发射 N离子注入 金刚石膜 热丝化学气相沉积  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号