紫外光诱导光电子发射负离子源的阈值光电子成像仪设计 (cited: 2)

设计了一套紧凑的光电子成像装置,它包括解离式光电子贴附负离子源、垂直安装的高分辨阈值光电子速度成像装置和线性飞行时间质谱仪．紫外光辐射金属表面诱导低能光电子发射,再通过低能电子贴附超声分子束产生高强度和冷的负离子源．结合这种负离子源和飞行时间质谱-光电子成像仪装置,仪器的质量分辨能达到200左右,能量分辨优于3%(即对1 eV动能的电子,分辨达到30 meV)．此外,使用该实验装置获得了CH₃S^-和S₂^-在611.46 nm下的低能阈值光电子成像结果．同时得到了CH₃S和S₂的更精确的电子亲和势分别为1.8626±0.0020和1.6744±0.0035 eV．初步的结果证明了该装置对研究阈值光电子成像精确测量光电子亲和势非常有效     

AlnC4-/0(n=2∽4)团簇的结构和成键性质: 光电子能谱和理论计算

本文采用尺寸选择的负离子光电子能谱与高精度理论计算,对Al_nC₄^-/0(n=2∽4))团簇的结构和成键性质进行了研究. Al₂C₄^-团簇负离子的最稳定结构是一个C_2v对称的平面结构,其中两个C₂单元与两个铝原子分别相连. Al₂C₄^-团簇负离子的次稳定结构是一个线型结构,两个铝原子位于C₄线型结构两端,能量仅比最稳定结构高0.05 eV. 中性Al₂C₄团簇是一个线型结构. Al₃C₄^-团簇负离子是一个平面结构,其中三个铝原子分别与两个C₂单元相连. 而中性Al₃C₄团簇则是一个V字型结构. Al₄C₄^-团簇负离子和中性Al₄C₄团簇均为C_2h对称的平面结构,四个铝原子分别位于两个C₂单元的末端. Al_nC₄^-/0(n=2∽4))团簇负离子的自适应自然密度配分的分析结果表明这些团簇中铝原子与C₂单元之间的化学键具有σ和π键特征.     

Experimental and Theoretical Study of Hydrogen Atom Abstraction from C2H6 and C4H10 by Zirconium Oxide Clusters Anions

使用配有团簇产生和化学反应源的飞行时间质谱装置,研究了锆氧阴离子团簇Zr_xOy^-与乙烷和丁烷的反应. 在反应中发现了Zr₂O₅H^-和Zr₃O₇H^-产物. 用密度泛函理论研究了乙烷在Zr₂O₅^-上的反应通道,发现乙烷脱氢反应可以发生,从而证明观察到的产物是源于脱氢反应. 该工作揭示了锆氧负离子团簇与烷烃反应中的新通道.     

AuCn-/0 (n=3-8)的负离子光电能谱和密度泛函理论研究：电子结合能和几何结构的奇偶效应

本文测量了AuC_n^- (n=3-8)的光电子能谱,并且对AuC_n^-/0 (n=3-8)的结构和性质进行了理论研究. 研究发现,AuC_n^-的光电子能谱表现出明显的奇偶交替变化,AuC₃^-、AuC₅^-、AuC₇^-的光电子能谱峰明显宽于AuC₄^-、AuC₆^-、AuC₈^-的光电子能谱峰,AuC₃^-、AuC₅^-、AuC₇^-的电子垂直脱附能低于AuC₄^-、AuC₆^-、AuC₈^-的电子垂直脱附能. AuC_n^- (n=3-8)的最稳定结构是链状结构. 在中性团簇AuC_n(n=3-8)中,除了AuC$₃和AuC₅的结构轻微弯曲外,其他团簇均是直线型结构. 理论计算的∠AuCC角度,Au-C键长和Au原子的电荷分布均呈现奇偶变化,与实验观测一致.     

Au2Gen-/0 (n=1∽8)团簇结构演化和电子性质的光电子能谱和理论计算研究

本文利用尺寸选择的负离子光电子能谱和理论计算探索Au₂Ge_n^-/0 (n=1∽8)团簇的结构演化和电子性质. 通过比较理论模拟谱与实验谱,并使用CCSD(T)理论方法计算异构体的相对能量,从而确定金锗混合团簇的全局最小结构. 本文发现Au₂Ge_n^-/0 (n=1∽8)团簇的两个Au原子具有较高的配位数和较弱的亲金相互作用. 负离子团簇和中性团簇的最稳定结构分别处于自旋双重态和自旋单重态. 除了Au₂Ge₄^-/0和Au₂Ge₅^-/0,负离子团簇和中性团簇的全局最小结构具有相似的结构特点. Au₂Ge₁^-/0团簇是一个C_2v对称的V形结构,而Au₂Ge₂^-/0团簇是一个C_2v对称的双桥连结构. Au₂Ge₁^-负离子团簇是两个Au原子盖帽的Ge₄四面体结构,而Au₂Ge₄中性团簇是两个Au原子盖帽的Ge₄菱形结构. Au₂Ge_5∽8^-/0团簇主要采用三棱柱、四棱柱、及五棱柱结构. Au₂Ge₆是一个C_2v对称的四棱柱结构,并表现出σ和π双键性质.     

CuC3H-团簇阴离子与CO反应：H辅助的C-C偶联

本研究利用质谱和密度泛函理论计算研究了CuC₃H^-团簇阴离子与CO的反应. 实验结果指出CO与团簇CuC₃H^-中的C₃H^-部分偶联可生成唯一产物COC₃H^-. 此反应的活性和选择性远高于团簇CuC₃^-与CO的反应. 理论计算结果进一步明确了H辅助的C-C偶联反应.     

TiGen-(n=7~12)团簇的光电子能谱及密度泛函理论研究

利用光电子能谱及密度泛函理论计算对TiGe_n^-(n=7~12)团簇的几何结构及电子特性等进行了系统研究. 对于TiGe_n^-负离子及中性TiGe_n,在n=8时出现了钛原子半内嵌的船型结构;在n=9~11时,新增的锗原子加盖到这种船型结构上,逐步形成钛原子完全内嵌的结构. TiGe₁₂^- 团簇具有一种钛原子内嵌的变形六棱柱结构. 自然布居分析结果显示,对于n=8~12的TiGe_n^-/0 团簇,随着内嵌结构的形成,有电子从锗原子转移到钛原子,说明其电荷转移方式与结构演变密切相关.     

在193 nm关于Si2分子的离子解离动力学的成像研究

在193 nm的单色激光实验中,本文利用时间切片离子速度成像技术,研究了经193 nm双光子电离得到的Si₂⁺的解离反应动力学过程. 根据实验得到的Si⁺离子的速度成像,观测到了两种离子直接解离通道：Si(³P_g)+Si⁺(²P_u)和Si(¹D₂)+Si⁺(²P_u). 电子基态的Si₂分子处于v=0∽5的振动态上,其经过双光子电离后激发到Si₂⁺离子的多个电子激发态势能面,生成主要通道Si(³P_g)+Si⁺(²P_u),其中v=1的解离信号最强. 此外,由于势能曲线2²Π_g与3²Π_g相同对称性引起的避免性势能面交叉,生成次要反应通道Si(¹D₂)+Si⁺(²P_u). 通道Si(¹D₂)+Si⁺(²P_u)的产物亦可以由生成的基态Si₂⁺(X⁴Σ_g^-)吸收一个193 nm光子后解离得到,其对应产物则具有更大的动能.     

Preparation and Characterization of Storage and Emission Functional Material of Chlorine Anion: [Ca24Al28O64]4+·(Cl-)3.80(O2-)0.10

通过碳酸钙、γ-三氧化二铝、氯化钙在氯气/氩气混合气气氛下的固态反应制备了一种氯负离子存储-发射功能材料[Ca₂₄Al₂₈O₆₄]⁴⁺·(Cl^-)_3.80(O^2-)_0.10(C12A7-Cl^-)．通过离子色谱、电子顺磁共振、拉曼光谱验证,C12A7-Cl^-材料中存储的负离子主要是氯负离子,浓度为(2.21±0.24)×10²¹ cm^-3,此外还有小部分的氧二价负离子、氧负离子、氧分子负离子．这与通过飞行时间质谱得到的结果一致：从C12A7-Cl^-材料表面发射出的负离子主要是氯负离子(大约90%),还有小部分的氧负离子和电子．材料结构和表观变化分别由X射线衍射和场发射扫描电子显微镜表征     

镧系一氧化物LnO(Ln=La, Ce, Pr, Nd)的电子亲和能

应用光电子成像技术研究了LaO_{-、CeO-、PrO-和NdO-.从1064 nm的振动分辨的光电子能谱得到LaO、CeO、PrO和NdO的电子亲和能分别为0.99(1)、1.00(1)、1.00(1) 和1.01(1) eV. 密度泛函计算和NBO分析显示镧系原子的4f电子趋于定域在4f轨道上,不受分子电荷状态的影响. 脱附的光电子主要来自镧系金属的6s轨道. 配位场理论的纯离子模型假设仍然是分析镧系一氧化物中性或负离}     

磁瓶式光电子能谱和速度成像光电子能谱对APS-(A=C14H10,蒽)的研究:电子结构,APS·的自旋轨道耦合和APS-的自旋偶极态

Gaseous dibenzo-7-phosphanorbornadiene P-sulfide anions APS^-(A=C₁₄H₁₀ or anthracene) were generated via electrospray ionization, and characterized by magnetic-bottle photoelectron spectroscopy, velocity-map imaging (VMI) photoelectron spectroscopy, and quantum chemical calculations. The electron affinity (EA) and spin-orbit (SO) splitting of the APS^· radical are determined from the photoelectron spectra and Franck-Condon factor simulations to be EA=(2.62±0.05) eV and SO splitting=(43±7) meV. VMI photoelectron images show strong and sharp peaks near the detachment threshold with an identical electron kinetic energy (eKE) of 17.9 meV at three different detachment wavelengths, which are therefore assigned to autodetachment from dipole-bound anion states. The B3LYP/6-31++G(d,p) calculations indicate APS^· has a dipole moment of 3.31 Debye, large enough to support a dipole-bound electron.     

Ultraviolet photoelectron spectroscopy of Si 4 - to Si 1000 -

Using a new experimental setup we have measured UV (h ν = 6.4 eV) photoelectron spectra of cold silicon cluster anions Si _n ^- in a very broad size range. For sizes up to n = 46 the spectra exhibit rich structures. For larger sizes only smooth spectra have been obtained. No trace of a bandgap has been found even for clusters with more than 1000 atoms. Received 30 November 2000     

Structural and bonding properties of ScSi_n~-(n=2～6) clusters:photoelectron spectroscopy and density functional calculations

Anion ion photoelectron spectroscopy and density functional theory (DFT) are used to investigate the electronic and structural properties of ScSi_n^- (n=2sim6) clusters and their neutrals. We find that the structures of ScSi_n^- are similar to those of Si_n+1^-. The most stable isomers of ScSi_n^- cluster anions and their neutrals are similar for n=2, 3 and 5 but different for n=4 and 6, indicating that the charge effect on geometry is size dependent for small scandium-silicon clusters. The low electron binding energy (EBE) tails observed in the spectra of ScSi_4,6^- can be explained by the existence of less stable isomers. A comparison between ScSi_n^- and VSi_n^- clusters shows the effects of metal size and electron configuration on cluster geometries.     

Oxidation of silicon surface with atomic oxygen radical anions

The surface oxidation of silicon （Si） wafers by atomic oxygen radical anions （O- anions） and the preparation of metal-oxide-semiconductor （MOS） capacitors on the O-oxidized Si substrates have been examined for the first time. The O- anions are generated from a recently developed O- storage-emission material of [Ca24Al2sO64]^4＋·4O^- （Cl2A7-O^- for short）. After it has been irradiated by an O- anion bean： （0.5 μA/cm^2） at 300℃ for 1-10 hours, the Si wafer achieves an oxide layer with a thickness ranging from 8 to 32 nm. X-ray photoelectron spectroscopy （XPS） results reveal that the oxide layer is of a mixture of SiO2, Si2 O3, and Si2O distributed in different oxidation depths. The features of the MOS capacitor of 〈Al electrode/SiOx/Si〉 are investigated by measuring capacitance-voltage （C - V） and current-voltage （I - V） curves. The oxide charge density is about 6.0 × 10^1 cm^-2 derived from the （C - V curves. The leakage current density is in the order of 10^-6 A/cm^2 below 4 MV/cm, obtained from the I - V curves. The O- anions formed by present method would have potential applications to the oxidation and the surface-modification of materials together with the preparation of semiconductor devices.     

慢电子速度成像法结合低温冷离子阱测量镥的电子亲和势

本文采用低温冷离子阱囚禁的手段累积镥的负离子束流,使得对其电子亲和势的测量变得实际可行.运用慢电子速度成像法获得具有高分辨率的镥负离子的光电子能谱,测得镥的电子亲和势为1926.2(50) cm~(-1)或0.23882(62) eV.此外,还观察到镥负离子的两个激发态.     

H2在Al7-团簇解离吸附的理论研究

利用高精度从头计算方法研究了H₂分子在Al₇^-阴离子团簇上的吸附及解离过程, 确定了分子吸附及解离吸附的稳定结构,并分析了各结构的光电子能谱. 计算表明H₂在Al₇^-上为弱的物理吸附,吸附能约为0.02 eV;解离过程的能垒约为0.75 eV. 对团簇及解离吸附结构的态密度与实验得到的光电子能谱的比较表明二者能够很好地符合, 确定H₂与激光烧蚀产生的团簇直接反应时能在Al₇^-上发生解离. 关键词： 7^-')" href="#">Al₇^- 2')" href="#">H₂ 解离吸附 从头计算     

Probing the electronic structure of mono-nitrogen doped aluminum clusters using anion photoelectron spectroscopy

We report a photoelectron spectroscopic investigation of mono-nitrogen doped aluminum cluster anions Al_nN^- (n = 2-22). Well-resolved spectra were obtained at three photon energies (355, 266, and 193 nm), revealing the structural and electronic evolution as the number of aluminum atoms increases in the doped clusters. For small Al_nN (n < 9) clusters, the Al atoms may be viewed to be monovalent, similar to pure aluminum clusters. Even-odd alternation of the electron affinities was observed for Al_nN clusters, suggesting that neutral clusters with odd n are closed shell and those with even n are open shell. The most interesting observation is the similarity between the spectra of Al_nN^- and Al_(n-1)^- for n>12. This observation suggests that these clusters can be described as (AlN)Al_(n-1)^-, i.e., an AlN unit weakly interacting with Al_(n-1)^- clusters. The electronic and atomic structural implications of this observation are discussed.     

Relative stability of Sin and SinSc- clusters in the range n = 14–18

We present a first-principles pseudopotential optimization of the lower energy equilibrium structure of Si_nSc^- anions for n=14-18. We find that Si₁₆Sc^- is more stable than its neighbors clusters, in agreement with recent experimental mass spectra. We also optimize the geometry of pure Si_n neutral clusters in the range n=14-18, and compare our results with those from previous first-principles calculations.     

The electron affinity of tungsten

The electron affinity of tungsten has been measured using laser photodetachment threshold spectroscopy in a collinear geometry. The electron affinity was determined to 6583.6(6) cm^-1 by observing the onset of the process when W^- ions in the 5d⁵6s²5d^56s^2 ⁶S_5/2 ground state are photodetached producing neutral W atoms in the 5d⁴6s²5d^46s^2 ⁵D₀ ground state. The measured value is in agreement with previous measurements and improves the accuracy by almost two orders of magnitude. Further, a photodetachment signal below the ground state photodetachment threshold was found, which indicates the existence of a bound excited state in W^-.