氮掺杂石墨烯纳米片的制备及其电化学性能

以石墨片为原料,在氮气气氛下,通过机械针磨法制备了氮掺杂石墨烯纳米片.扫描电子显微镜和比表面积分析表明机械针磨过程可以有效地将大尺寸石墨片破碎成石墨烯纳米片.在石墨片的破碎过程中,会引起C—C键的破坏.因此,在破坏的边缘位置能够产生碳活性点.这些碳活性点可以与氮反应实现氮元素的掺杂.X射线光电子能谱分析表明碳活性点与氮反应使氮元素掺入石墨烯结构边缘,形成吡咯型氮和吡啶型氮.电化学阻抗谱分析表明所制备的氮掺杂石墨烯纳米片对I_3~-还原反应具有较高的电催化活性,循环伏安与恒流充放电测试表明氮掺杂石墨烯纳米片具有较好的电容性能.较高的比表面积和边缘氮掺杂结构是氮掺杂石墨烯纳米片具有优异电化学性能的主要原因.因此,氮掺杂石墨烯纳米片可以应用于染料敏化太阳能电池对电极和超级电容器电极.     

掺杂石墨烯吸附特性的第一性原理研究

利用第一性原理方法研究了一氧化碳分子在本征和硼、氮、铝、磷掺杂的有限尺寸石墨烯上的吸附机理.结果表明，石墨烯作为一氧化碳传感器时的性能依赖于掺杂元素.本征、硼和氮掺杂石墨烯吸附一氧化碳时的吸附能较低，为物理吸附.铝、磷掺杂石墨烯的吸附能显著提高，比本征、硼和氮掺杂时高出约一个数量级，且铝和磷原子从石墨烯中突出，使其发生局部弯曲.铝掺杂石墨烯增强了石墨烯与一氧化碳分子之间的相互作用，可以提高石墨烯的气敏性和吸附能力，是一氧化碳传感器的最佳候选材料之一.     

氮掺杂的石墨烯作为钠离子电池负极材料的第一性原理研究

采用基于密度泛函理论的第一性原理方法,研究了本征石墨烯、氮掺杂的石墨烯和叽咯石墨烯吸附钠原子的电荷密度、吸附能、态密度和储存量.结果表明,三种石墨烯中,钠原子的最佳吸附位置为H位.与本征石墨烯相比,氮掺杂的石墨烯对钠原子的吸附能提高,叽咯石墨烯对钠原子的吸附能是-3.274 eV,约为本征石墨烯对钠原子吸附能的1.7倍.钠原子与叽咯石墨烯中的氮原子发生轨道杂化,而与本征石墨烯和氮掺杂的石墨烯没有发生轨道杂化现象.叽咯石墨烯能够吸附10个钠原子,与本征石墨烯相比显著提高,氮掺杂的石墨烯只能吸附4个钠原子.因此,叽咯石墨烯有望成为一种潜在的储钠材料.     

氮掺杂对石墨烯摩擦学特性影响的分子动力学模拟

掺氮石墨烯具有良好的应用前景,但对其摩擦学特性的研究仍较为缺乏.本文采用分子动力学方法研究了氮掺杂对石墨烯摩擦学特性的影响.结果表明在公度、非公度的界面结构下,氮掺杂对石墨烯摩擦特性的影响呈现相反的趋势.界面结构为公度状态时,氮原子的引入导致了局部非公度状态,因而界面势垒降低、摩擦减小.界面公度性的改变、层间氮原子和碳原子的范德瓦耳斯力作用对界面摩擦的影响相反,在二者的共同作用下,随氮掺杂比例的升高,掺氮石墨烯体系的界面摩擦力呈现先增大再减小的趋势.界面结构为非公度状态时,氮原子的引入对界面摩擦的影响主要体现在原子类型的变化,界面摩擦随氮掺杂比例的增大而增大.存在空位缺陷的石墨烯体系的摩擦最大,掺杂氮原子对于降低缺陷石墨烯体系的摩擦具有积极意义.     

Fe/Co/Ni-N共掺杂石墨烯氧还原反应活性的DFT研究

为了研究Fe/Co/Ni-N掺杂石墨烯的氧还原反应(ORR)活性,比较单金属原子和氮不同的掺杂方式对石墨烯ORR活性的影响.利用Materials Studio软件建立了Fe/Co/Ni-N掺杂石墨烯模型,然后将氧气分子分别吸附在Fe/Co/Ni-N掺杂石墨烯模型表面上.采用CASTEP模块对构建的模型进行结构优化并模拟计算,分析了Fe/Co/Ni-N掺杂石墨烯的吸附能、脱附能和导电性变化规律.基于模拟计算,发现单金属原子掺杂石墨烯时,Fe掺杂石墨烯的ORR活性优于Co和Ni;单金属原子和氮共掺杂石墨烯时,Fe-N掺杂石墨烯的ORR活性高于Co-N和Ni-N掺杂石墨烯,且M-N₄-G形态的ORR活性优于M-N₁-G、M-N₂-G和M-N₃-G.     

第一性原理对氮掺杂石墨烯作为锂-空电池阴极材料还原氧分子的机理研究

采用第一性原理,研究了不同浓度的氮掺杂石墨烯还原氧分子的机理.结果表明,掺杂氮原子以后,氧分子的吸附能增大,获得的电荷增多,O—O键长变长,说明氮掺杂石墨烯增强了对氧分子的还原能力.进一步分析发现,氧分子吸附之后,氮原子和氧分子均从碳原子上获得电荷,氮原子同时也向氧分子转移电荷,从而使氧分子与基底的相互作用增强.另外,通过对比不同浓度的氮原子掺杂,发现3.13 at%的氮原子掺杂比例对氧分子的还原性能最好.     

氮掺杂石墨烯制备方法综述

石墨烯是当前最受关注的新型材料之一。其结构是由两个对称的、相互嵌套的子晶格所组成。通过异质原子掺杂是打破其对称结构,从而调制其物理性能的重要方法。氮原子具有和碳原子接近的尺寸,相对容易被掺杂到石墨烯的晶格中,因而氮掺杂在石墨烯材料的研究中具有重要地位。本文拟对石墨烯氮掺杂的制备方法进行综述,期望能为广大石墨烯研究者提供借鉴。     

氮掺杂石墨烯纳米结构的等离激元激发（英文）

基于含时密度泛函理论,研究了氮掺杂石墨烯纳米结构的等离激元特性。吡啶型氮掺杂不影响石墨烯纳米结构的等离激元激发特性,而取代型氮掺杂主要基于石墨烯纳米结构对称性的改变和体系中电子密度的增加来影响石墨烯纳米结构的等离激元共振。相对于纯六角石墨烯纳米结构,在低能共振区,取代型氮掺杂六角石墨烯纳米结构的等离激元共振能量发生了红移。相对于纯矩形石墨烯纳米结构,在低能共振区,取代型氮掺杂矩形石墨烯纳米结构沿扶手椅型边界方向激发时,其等离激元共振能量发生了蓝移;沿Z字型边界激发时,其主要的等离激元共振模式受掺杂氮的影响较小。     

氮掺杂和空位对石墨烯纳米带热导率影响的分子动力学模拟

石墨烯是近年纳米材料研究领域的一个热点,其独特的热学性质受到了广泛关注,为了实现对石墨烯传热特性的预期与可控,利用氮掺杂和空位缺陷对石墨烯进行改性.采用非平衡态分子动力学方法研究了扶手形石墨烯纳米带中氮掺杂浓度、位置及空位缺陷对热导率影响并从理论上分析了热导率变化原因.研究表明氮掺杂后石墨烯纳米带热导率急剧下降,氮浓度达到30%时,热导率下降了75.8%;氮掺杂位置从冷浴向热浴移动过程中,热导率先近似的呈线性下降后上升;同时发现单原子三角形氮掺杂结构比多原子平行氮掺杂结构对热传递抑制作用强;空位缺陷的存在降低了石墨烯纳米带热导率,空位缺陷位置从冷浴向热浴移动过程中,热导率先下降后上升,空位缺陷距离冷浴边缘长度相对于整个石墨烯纳米带长度的3/10时,热导率达到最小.石墨烯纳米带热导率降低的原因主要源于结构中声子平均自由程和声子移动速度随着氮掺杂浓度、位置及空位缺陷位置的改变发生了明显变化.这些结果有利于纳米尺度下对石墨烯传热过程进行调控及为新材料的合成应用提供了理论支持.     

B、N掺杂对钠在石墨烯上吸附性能的影响

采用基于密度泛函理论的第一性原理方法,研究了本征石墨烯及缺陷石墨烯对Na原子的吸附行为.主要研究了三种石墨烯:本征石墨烯、B掺杂的石墨烯和N掺杂的石墨烯.结果表明,与本征石墨烯相比,B掺杂的石墨烯和N掺杂的石墨烯在吸附能、电荷密度、态密度和储钠量方面表现出很大的差异.B掺杂的石墨烯对Na原子的吸附能是-1.93 e V,约为本征石墨烯对Na原子吸附能的2.7倍;与本征石墨烯相比,N掺杂的石墨烯对Na原子的吸附能明显增大.态密度计算结果表明,Na原子与B掺杂的石墨烯中的B原子发生轨道杂化,而本征石墨烯和N掺杂的石墨烯中不存在轨道杂化现象.B掺杂的石墨烯对Na原子的吸附量是3个,与本征石墨烯相比显著提高.因此,B掺杂的石墨烯有望成为一种新型的储钠材料.     

B、N掺杂对钠在石墨烯上吸附性能的影响

采用基于密度泛函理论的第一性原理方法，研究了本征石墨烯及缺陷石墨烯对Na原子的吸附行为。主要研究了三种石墨烯：本征石墨烯、B掺杂的石墨烯和N掺杂的石墨烯。结果表明，与本征石墨烯相比，B掺杂的石墨烯和N掺杂的石墨烯在吸附能、电荷密度、态密度和储钠量方面表现出很大的差异。B掺杂的石墨烯对Na原子的吸附能是-1.93 eV，约为本征石墨烯对Na原子吸附能的2.7倍；与本征石墨烯相比，N掺杂的石墨烯对Na原子的吸附能明显增大。态密度计算结果表明，Na原子与B掺杂的石墨烯中的B原子发生轨道杂化，而本征石墨烯和N掺杂的石墨烯中不存在轨道杂化现象。B掺杂的石墨烯对Na原子的吸附量是3个，与本征石墨烯相比显著提高。因此，B掺杂的石墨烯有望成为一种新型的储钠材料。     

Facile Fabrication of Bicomponent CoO/CoFe2O4‐N‐Doped Graphene Hybrids with Ultrahigh Lithium Storage Capacity

A facile strategy is developed to fabricate bicomponent CoO/CoFe₂O₄‐N‐doped graphene hybrids (CoO/CoFe₂O₄‐NG). These hybrids are demonstrated to be potential high‐performance anodes for lithium‐ion batteries (LIBs). The CoO/CoFe₂O₄ nanoplatelets are finely dispersed on the surface of N‐doped graphene nanosheets (CoO/CoFe₂O₄‐NG). The CoO/CoFe₂O₄‐NG electrode exhibits ultrahigh specific capacity with 1172 mA h g^?1 at 500 mA g^?1 and 970 mA h g^?1 at 1000 mA g^?1 as well as excellent cycle stability due to the synergetic effects of N‐doped graphene and CoO/CoFe₂O₄ nanoplatelets. The well‐dispersed bicomponent CoO/CoFe₂O₄ is responsible for the high specific capacity. The N‐doped graphene with high specific surface area has dual roles: to provide active sites for dispersing the CoO/CoFe₂O₄ species and to function as an electrical conducting matrix for fast charge transfer. This method provides a simple and efficient way to configure the hybridized electrode materials with high lithium storage capacity.     

Interplay of the doped Ge atoms and the N vacancies with the negative thermal expansion of M3(Cu1−x Ge x )N1−y

The giant negative thermal expansion (NTE) found in the anti-perovskite manganese nitride could be controlled by the content of the doped Ge and the vacancies of N. In this paper, the origin of such a tunable thermal expansion behavior is systematically studied. Our calculations indicate that the doped Ge atoms enhance the NTE property of the compound, and the existing N vacancies have a weak influence on the NTE property. Furthermore, the change of the exchange parameters between Mn ions with the content of the doped Ge as well as with the N vacancies in the compound is revealed, from which the relative stabilities of different magnetic phases in the concerned compounds can be explained.     

利用同位素掺杂与分形结构调控石墨烯热导率

本研究采用非平衡分子动力学方法对用Rectangle Carpet(RC)和Sierpinski Carpet(SC)分形结构布局的同位素掺杂石墨烯的热导率进行系统研究。研究表明,RC和SC结构的热导率均随分形数(m)的增加先减小后略微升高,且SC结构的热导率要低于RC结构的热导率。同时,我们通过计算声子谱、声子群速度、声子参与比和声子态密度来分析原始石墨烯、m=3的RC结构(RC3)和m=3的SC结构(SC3)结构中的声子行为。在全声子频率区域内,原始石墨烯、RC3和SC3结构的平均声子群速度和平均声子参与比分别为3.47 km·s^-1,0.98;2.77 km·s^-1,0.62和2.34km·s^-1,0.61。结果显示,与原始结构和RC结构相比,SC结构中有更多的声子模被局域化,导致更低的声子群速度和较强的声子散射,进而可以抑制声子的热输运。     

双层h-BN/Graphene结构稳定性及其掺杂特性的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法研究了双层h-BN/Graphene的稳定性及其掺杂特性.研究发现,双层h-BN/Graphene能带结构在K点处有一个小的带隙,在费米能处有类Graphene的线性色散关系.通过施加应变和掺杂来调节带隙,发现掺杂后费米能级附近引入的新能级,主要是N原子的贡献,掺杂后的Na原子和N,C之间存在电荷转移,材料转变为金属性.电荷的转移、载流子密度的增加,在电子元器件中有重要的应用前景.     

Versatile Graphene Quantum Dots with Tunable Nitrogen Doping

This paper reports a facile fabrication of N‐doped graphene quantum dots (N‐GQDs) showing controllable chemical properties through a hydrothermal treatment. The N‐GQDs have a uniform size of 3.06 ± 0.78 nm and prefer the equilibrium shapes of circle and ellipse due to the minimization of edge free energy. The N/C atomic ratio in N‐GQDs can be precisely tailored in a range from 8.3 at% to 15.8 at% by simply controlling the concentration of N source (ammonium hydroxide). One order of magnitude quantum yield of 34.5% is achieved by N‐GQDs, compared with the N‐free GQDs, as the substitutional N has an essential role in more effective radiative emission. Excessive N dopants in N‐GQDs can lead to photoluminescence quenching, through nonradiative transition back to the ground state. The N‐GQDs are further found to be suitable as photocurrent conversion materials due to benign energy matching with anatase nanofibers, the ultrafast electron injection at their interface, and efficient electron transfer. This work provides an efficient and inspiring approach to engineering both chemical components and physical properties of N‐GQDs, and will therefore promote their basic research and applications in energy conversion.     

Forming mechanism of nitrogen doped graphene prepared by thermal solid-state reaction of graphite oxide and urea

Nitrogen doped graphene was synthesized from graphite oxide and urea by thermal solid-state reaction. The samples were characterized by transmission electron microscopy, atomic force microscopy, scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectra, element analysis, and electrical conductivity measurement. The results reveal that there is a gradual thermal transformation of nitrogen bonding configurations from amide form nitrogen to pyrrolic, then to pyridinic, and finally to “graphitic” nitrogen in graphene sheets with increasing annealing temperature from 200 to 700 °C. The products prepared at 600 °C and 700 °C show that the quantity of nitrogen incorporated into graphene lattice is ∼10 at.% with simultaneous reduction of graphite oxide. Oxygen-containing functional groups in graphite oxide are responsible for the doping reaction to produce nitrogen doped graphene.     

Graphene for Thermoelectric Applications: Prospects and Challenges

Thermoelectric power generators require high-efficiency thermoelectric materials to transform waste heat into usable electrical energy. An efficient thermoelectric material should have high Seebeck coefficient and excellent electrical conductivity as well as low thermal conductivity. Graphene, the first truly 2D nanomaterial, exhibits unique properties which suit it for use in thermoelectric power generators, but its application in thermoelectrics is limited by the high thermal conductivity and low Seebeck coefficient resulting from its gapless spectrum. However, with the possibility of modification of graphene's band structure to enhance Seebeck coefficient and the reduction of its thermal conductivity, it is an exciting prospect for application in thermoelectric power generation. This article examines the electronic, optical, thermal, and thermoelectric properties of graphene systems. The factors that contribute to these material properties in graphene systems like charge carriers scattering mechanisms are discussed. A salient aspect of this article is a synergistic perspective on the reduction of thermal conductivity and improvement of Seebeck coefficient of graphene for a higher thermoelectric energy conversion efficiency. In this regard, the effect of graphene nanostructuring and doping, forming of structural defects, as well as graphene integration into a polymer matrix on its thermal conductivity and Seebeck coefficient is elucidated.     

掺杂菱形BN片的石墨烯纳米带的电子特性

采用基于密度泛函理论的第一性原理方法，系统研究掺杂菱形BN片的石墨烯纳米带的电子特性.掺杂使扶手椅型石墨烯纳米带（AGNRs）的带隙增大，不同位置掺杂AGNRs的带隙大小略有差异.在无磁性态，无论是否掺杂，锯齿型石墨烯纳米带（ZGNRs）都为金属.在铁磁态，掺杂使ZGNRs由金属转变为半导体.而处于反铁磁态时，无论是否掺杂，ZGNRs都为半导体，掺杂使其带隙发生改变.掺杂的AGNRs和ZGNRs的结构稳定，掺杂ZGNRs的基态为反铁磁态.掺杂菱形BN片可以有效调控GNRs的电子特性.