HFCVD法制备纳米晶体碳化硅薄膜中氢流量对晶粒尺寸的影响

以甲烷、硅烷和氢气为反应气体,采用热丝化学气相沉积(HFCVD)法在单晶硅衬底上沉积纳米晶体碳化硅(SiC)薄膜.通过X射线衍射(XRD)和扫描电子显微镜(SEM)分别对SiC薄膜的晶体结构和表面形貌进行分析.实验发现氢气流量对碳化硅薄膜晶粒尺寸有很大影响,当氢气流量从10SCCM变化到300SCCM时,薄膜晶粒的平均尺寸将由较大的400 nm左右减小到40 nm左右.     

热电气体发电及化工合成装置原理探索

从原理上设计了一种热电气体发电及化工合成装置,以普通水为工质,通过吸热升温变为高温高压水蒸气,实施电晕放电,生成等离子气体,喷入发电通道发出电能,同时生成氢气和氧气、水蒸气,将其中氢气与二氧化碳合成反应,制得甲醇或甲醛等原料,再将甲醛参与化学反应,生成葡萄糖.     

HFCVD法制备纳米晶体碳化硅薄膜中氢流量对晶粒尺寸的影响

以甲烷、硅烷和氢气为反应气体,采用热丝化学气相沉积（HFCVD）法在单晶硅衬底上沉积纳米晶体碳化硅(SiC)薄膜.通过X射线衍射(XRD)和扫描电子显微镜（SEM）分别对SiC薄膜的晶体结构和表面形貌进行分析.实验发现氢气流量对碳化硅薄膜晶粒尺寸有很大影响,当氢气流量从10SCCM变化到300SCCM时,薄膜晶粒的平均尺寸将由较大的400 nm左右减小到40 nm左右.     

化学气相沉积法制备的石墨烯晶畴的氢气刻蚀

利用化学气相沉积法在抛光铜衬底上制备出六角形石墨烯晶畴, 并且在高温条件下对石墨烯晶畴进行氢气刻蚀, 利用光学显微镜和扫描电子显微镜对石墨烯晶畴进行观测, 发现高温条件下石墨烯晶畴表面能够被氢气刻蚀出网络状和线状结构的刻蚀条纹. 通过电子背散射衍射测试证明了刻蚀条纹的形态、密度与铜衬底的晶向有密切关系. 通过对比实验证明了石墨烯表面上的刻蚀条纹是由于石墨烯和铜衬底的热膨胀系数不同, 在降温过程中, 石墨烯表面形成了褶皱, 褶皱在高温氢气气氛下发生氢化反应形成的. 对转移到二氧化硅衬底的石墨烯晶畴进行原子力显微镜测试, 测试结果表明刻蚀条纹的形貌、密度与石墨烯表面褶皱的形貌、密度十分相似. 进一步证明了刻蚀条纹是由于褶皱结构被氢气刻蚀引起的. 实验结果表明, 即使在六角形石墨烯晶畴表面也存在褶皱和点缺陷. 本文提供了一种便捷的方法来观察铜衬底上石墨烯褶皱的分布与形态; 同时, 为进一步提高化学气相沉积法制备石墨烯的质量提供了更多参考.     

常温下氢气声转动弛豫模型研究

氢气声弛豫过程主要由氢气分子的转动弛豫决定.然而,当前大部分声弛豫模型是基于气体分子的振动弛豫,并不适用于氢气.本文利用理想气体焓变与定压热容的关系,提出了一种基于氢气分子转动的弛豫模型,并讨论了转动弛豫和振动弛豫的相似与不同.该模型不仅适用于氢气,还能够和其他气体的振动弛豫模型相结合求解混合气体的声弛豫吸收谱和声速频谱.仿真结果表明,对于H_2,N_2/H_2,CO_2/H_2等气体,该模型生成的声速、声弛豫谱曲线与实验数据符合.本模型为包含氢气的混合气体声学探测提供了一个有效的理论模型.     

检测气体泄漏的电子“鼻”——JB-75型气敏检漏仪

氢是能够燃烧的气体,无色无臭,单凭人的视觉、嗅觉等感官很难察觉它的存在.它在空气中的浓度达到4.1%时,遇火就会爆炸,可以酿成严重的事故.不过,事物总是一分为二的,氢虽然是一种易燃易爆的危险气体,但易于制取,某些性能又符合生产上的要求,所以在工业上有广泛的用途.例如半导体工业,在区熔、外延、烧结等许多工序,常常用氢气作为防止氧化的保护气氛.又如电力部门使用的氢冷发电机,则用氢气作为冷却剂.化学工业方面,在生产过程中需要使用氢气或产生氢气的情况也是很多很多的.在使用或产生氢气的单位中,怎样及时发现或检查贮存氢气的容器、管…     

3C-SiC薄膜反向外延生长工艺的研究

本文采用低压化学气相淀积(LPCVD)技术,以甲烷CH4作为反应碳气体源,氢气H2作为稀释气体,将两者混合后,在n型Si(111)衬底上反向外延生长n型3C-SiC薄膜。采用X射线衍射(XRD)、拉曼光谱(RAM)及扫描电子显微镜(SEM)对生长的3C-SiC薄膜进行测试和分析。对比在相同的反应温度下,不同的热处理方式对生长的3C-SiC薄膜质量的影响,进一步探讨SiC薄膜反向外延生长工艺的改进方法。结果表明,较慢的降温速率能够生长出质量较高的3C-SiC薄膜。     

(0001)SiC衬底MgB_2超薄膜的制备和性质研究

利用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition简称为(HPCVD)在(0001)SiC衬底上制备了干净的MgB2超导超薄膜.在背景气体、压强、载气氢气流量以及B2H6的流量一定的情况下,改变沉积时间,制得一系列MgB2超薄膜样品。通过观察样品的表面形貌变化探究了MgB2超薄膜的生长过程.该系列超薄膜的生长遵循Volmer-Weber岛状生长模式且沿c轴外延生长.以20nm超薄膜作为例子,可知其表面连接性良好,超导转变温度Tc(0)≈38.5K,临界电流密度Jc≈0.82×107 A/cm2,表明了利用HPCVD在(0001)SiC衬底上制备的MgB2超薄膜有很好的性能.这预示其在超导电子器件上具有广阔的应用前景.     

非预混燃烧模型模拟流化床生物质气化器中富氢气体的制备

对用流化床生物质气化器合成富氢气体,建立了基于非预混燃烧的模型对气化器中的生物质在空气-水蒸汽环境中的气化反应过程的模型,并采用流体力学软件 FLUENT 6.0对过程进行了模拟.通过模拟结果与实验结果的对比分析发现,水蒸汽与生物质的比、空氧比和生物质颗粒的粒径大小是决定产气中氢气含量的重要参数.同时,对气化器中氢气的分布进行了研究.     

非水纳米分散系的冷冻蚀刻电镜原位观测

研究了冷冻蚀刻电镜技术原位观测合成的纳米分散系的制样步骤、制样方法 ,并利用冷冻蚀刻电镜技术原位观测了四种纳米分散系中分散相的粒度、粒度分布和聚集状态 .研究结果表明 :蚀刻时间对电镜照片图像质量有较大影响 ,蚀刻时间应根据分散系中分散相含量、粒度大小来选 ;冷冻蚀刻电镜用于原位观测非水纳米分散系 ,具有准确、直观、清晰、立体的特点 ,并且可同时采集多种信息 .     

等离子体增强化学气相沉积法制备立方氮化硼薄膜过程中的表面生长机理

利用感应耦合等离子体增强化学气相沉积法以Ar，He，N₂和B₂H₆为反应气体制备了高纯立方氮化硼薄膜.用四极质谱仪对等离子体状况进行了系统的分析，发现B₂H₆完全被电离而N₂只是部分被电离.H₂和过量的N₂在等离子体中生成大量中性的H原子和活化的N^*₂，它们与表面的相互作用严重地阻碍了立方 关键词： 立方氮化硼薄膜 等离子体 质谱     

Enhancement of adhesion between polyphenylene sulfide and copper by surface treatments

In this paper, we introduce methods which can effectively enhance the adhesion between polyphenylene sulfide (PPS) and bulk Cu. One of the methods involved the thermal evaporation of PPS to form a buffer layer on Cu and the other involved plasma treatment with reactive gases such as O₂, H₂, and N₂ on the PPS buffer layer. The adhesion strength of samples prepared by PPS thin film coating (∼26 MPa) was largely enhanced when compared to that of samples obtained by only etching (∼15 MPa). Among the samples obtained by plasma treatment using various reactive gases, the samples treated using H₂ plasma showed the best adhesion strength (of ∼32 MPa) in comparison to the other samples owing to the adhesion between hydrophobic surfaces.     

Thermal and photochemical reactivity of oxygen atoms on gold nanocluster surfaces

Reduction of oxidized gold nanoclusters by exposures to foreign gases and irradiation of UV photons has been investigated using X-ray photoelectron spectroscopy. Gold nanoclusters with narrow size distributions protected by alkanethiolate ligands were deposited on a TiO₂(1 1 0) surface with dip coating. Oxygen plasma etching was used for removal of alkanethiolate ligands and oxidization of gold clusters. The oxidized gold clusters were exposed to CO, C₂H₂, C₂H₄, H₂, and hydrogen atoms. Although, C₂H₄ and H₂ did not show any indications of reduction of oxidized gold clusters, CO, C₂H₂, and hydrogen atoms reduced the oxides on gold cluster surfaces. Among them, hydrogen atoms were most effective for reduction. Irradiation of UV photons around 400 nm could also reduce the oxidized gold clusters. The photochemical reduction mechanism was proposed as follows. The photo-reduction was initiated by electronic excitation of gold clusters and oxygen atoms activated reacted with carbon atoms at the surfaces of gold clusters. Carbon species were likely absorbed in gold clusters or remained at the boundaries between gold clusters when gold clusters agglomerated during oxygen plasma exposures. As the photochemical reduction progressed, carbon atoms segregated to the surfaces of gold clusters.     

External-field-controlled laser wet etching of polycrystalline Al2O3TiC

Laser-induced etching of polycrystalline Al₂O₃TiC material by tightly focused CW Ar ion laser has been investigated in both H₃PO₄ and KOH solutions with influence of an external electric field. It is found that a weak external electric field will change the ions distribution in chemical solutions and cause obvious change in etching behavior. The laser etching in a H₃PO₄ solution can be enhanced by both positive and negative biases of the substrate. While etching in a KOH solution, a positive bias can enhance the etching reaction, whereas a negative bias can suppress the etching process. It is also found that the external electric field can always enhance the mass transfer between reaction products and fresh etchant in a H₃PO₄ solution. It is revealed that the supply of H⁺ ions contributes to the etching process in a H₃PO₄ solution, while the supply of OH^– ions contributes to the etching process in a KOH solution. The electric field can be used to control the etching process to achieve fast tuning and higher accuracy.     

A Raman system for multi-gas-species analysis in power transformer

We have built a complete Raman detection system for multi-trace-gas diagnosis, which is suitable for analyzing the dissolved gases in electric power system. In the system, a high-sensitivity CCD device connected to a spectrometer is used as the detection unit of the Raman system. A near-confocal cavity is used for improving the detection sensitivity of the system. In the effective spectral range of about 570–710 nm, Raman spectra of eight typical gases are achieved by using this Raman system. The detection limits for different gases have been obtained: 126 ppm for CO₂, 21 ppm for CH₄, 63 ppm for C₂H₄, 42 ppm for C₂H₂, 96.6 ppm for H₂. The detectability of the system satisfies the requirements of gas diagnosis in power transformer.     

Laser-induced etching and deposition of W using a-SiO<Subscript>2</Subscript> microspheres

A regular lattice of a-SiO₂ microspheres on a quartz support is used as a microlens array for laser-induced surface patterning by etching and deposition of W in atmospheres of WF₆ and WF₆+H₂, respectively. Received: 22 July 2002 / Accepted: 30 July 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +43-732/2468-9242, Email: dieter.baeuerle@jku.at     

UPS measurements of molecular energy level of condensed gases

There have been numerous attempts to use ultraviolet photoemission spcctroscopy (UPS) to monitor the chemical states of adsorbed gas molecules on metal surfaces. To interpret the data correctly, one has to determine the effect of photoemission on the measured energy levels of the molecule. We have measured the UPS spectra of seven gases (C₆H₆, C₅H₅N, CH₃OH, C₂H₅OH, H₂CO, H₂O, NH₃) condensed on a LN₂ cooled MoS₂ substrate at hv = 21.2 eV. The inertness of the MoS₂ substrate assures that no strong chemical bonding exists between the substrate and adsorbed molecules. For each gas, the spectrum of the condensed phase is similar to the corresponding spectrum of the gas phase except all the energy levels are shifted up by the same amount. This shift ranges from 1 to 1.65 eV for the gases studied. The energy shift is attributed to the dielectric screening of the hole produced during the optical excitation.     

Heteroepitaxial growth of oxides on sapphire induced by laser radiation in the solid–liquid interface

2 O₃, Fe₂O₃ and MnO₂ on sapphire from an aqueous solutions of either CrO₃, FeCl₃, or KMnO₄, respectively, under laser irradiation of the interface sapphire/liquid. The interface is exposed through the sapphire substrate to the radiation of a copper vapor laser (wavelength of 510 nm). The etching of sapphire is accompanied by the deposition of oxide films, which are shown to grow epitaxially on the sapphire substrate, while the deposition of the polycrystalline oxide film occurs on a glass substrate under the same experimental conditions. Similarly, the epitaxial growth of cubic Fe₂O₃ and orthorhombic MnO₂ is observed, though their crystallographic structure is different from the hexagonal structure of sapphire. Received: 26 June 1997/Accepted: 7 July 1997     

Investigation of etch characteristics of non-polar GaN by wet chemical etching

We characterized the surface defects in a-plane GaN, grown onto r-plane sapphire using a defect-selective etching (DSE) method. The surface morphology of etching pits in a-plane GaN was investigated by using different combination ratios of H₃PO₄ and H₂SO₄ etching media. Different local etching rates between smooth and defect-related surfaces caused variation of the etch pits made by a 1:3 ratio of H₃PO₄/H₂SO₄ etching solution. Analysis results of surface morphology and composition after etching by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) demonstrated that wet chemical etching conditions could show the differences in surface morphology and chemical bonding on the a-plane GaN surface. The etch pits density (EPD) was determined as 3.1 × 10⁸ cm⁻² by atom force microscopy (AFM).     

Defect-free growth of epitaxial silicon at low temperatures (500–800 °C) by atmospheric pressure plasma chemical vapor deposition

Epitaxial Si growth at low temperatures (500–800 °C) by atmospheric pressure plasma chemical vapor deposition has been investigated. Silicon films are deposited on (001) Si wafers using gas mixtures containing He, H₂, and SiH₄. The effects of deposition parameters (composition of reactive gases, very high frequency (VHF) power, and substrate temperature) on film properties are investigated by reflection high-energy electron diffraction, atomic force microscopy, cross-sectional transmission electron microscopy, and plasma emission spectroscopy. It is found that epitaxial temperature can be reduced by increasing VHF power, and that an optimum range of VHF power exists for Si epitaxy, depending on the substrate temperature and the composition of the reactive gases. The result of the H₂ concentration dependence of H_α emission intensity, shows that hydrogen atoms generated in the atmospheric pressure plasma play an important role in Si epitaxial growth. Under the optimized growth conditions, defect-free epitaxial Si films (as observed by transmission electron microscopy) with excellent surface flatness are grown at 500 °C with an average growth rate of approximately 0.25 μm/min. PACS 81.05.Cy; 81.15.Gh; 68.55.Jk