Specific heat of NaNO2 near its transition points

Using an a.c. technique, the specific heat of NaNO₂ was measured as a function of temperature near its antiferroelectric-to-paraelectric phase transition point (T_N). The transition was found to be of the second order. The critical exponents are; α = 0·38 for ? = 2 × 10^?4 ～ 1 × 10^?1, and α′ = 0·18 for ? = ?2 × 10^?4 ～ ?3 × 10^?3. The critical exponents deduced from the scaling-law relations are roughly close to the values obtained from a random phase approximation for a system with an isotropic interaction. However, a difference was recognized between the observed exponent for the specific heat and the values theoretically given for T > T_N by the random phase approximation for a system with a short-range interaction or for a system with a long-range dipolar interaction. A thermodynamical analysis was made by using the generalized Pippard relation, and the present result was found to be consistent with the pressure dependence of the antiferroelectric transition point.     

Magnetic-field-induced slowing-down of molecular rotation in C<Subscript>60</Subscript> crystals

The molecular dynamics of C₆₀ crystals was studied by inelastic neutron scattering at T=290 K, i.e., above the first-order phase transition temperature (T_C≈260 K), in the region of free C₆₀-spheroid rotation in the lattice. The energy broadening of the original neutron spectrum 2Γ₀≈0.1 meV for a momentum transfer q=2 Å^?1 is in agreement with NMR data on the rotational relaxation time of the molecule τ～10^?11 s～ ?Γ₀. This effect was observed to decrease in magnetic fields H=2.5–4.5 kOe applied along the scattering vector: Γ_H=0.7Γ₀. The slowing-down of the molecular rotation is discussed in connection with the interaction of a magnetic field with the molecular currents, which fluctuate when the C₆₀ cage rotates.     

Hopping conductivity of carbynes modified under high pressures and temperatures: Galvanomagnetic and thermoelectric properties

The conductivity, thermopower, and magnetoresistance of carbynes structurally modified by heating under a high pressure are investigated in the temperature range 1.8–300 K in a magnetic field up to 70 kOe. It is shown that an increase in the synthesis temperature under pressure leads to a transition from 1D hopping conductivity to 2D and then to 3D hopping conductivity. An analysis of transport data at T ≤ 40 K makes it possible to determine the localization radius a ～ (56?140) Å of the wave function and to estimate the density of localized states _g(E _F) for various dimensions d of space: _g(E _F) ≈ 5.8 × 10⁷ eV^?1 cm^?1 (d=1), _g(E _F) ≈5×10¹⁴ eV^?1 cm ^?2 (d=2), and _g(E _F)≈1.1×10²¹ eV^?1 cm_?3 (d=3). A model for hopping conductivity and structure of carbynes is proposed on the basis of clusterization of sp ² bonds in the carbyne matrix on the nanometer scale.     

Structure-mediated transition in the behavior of elastic and inelastic properties of beach tree bio-carbon

Microstructural characteristics and amplitude dependences of the Young modulus E and of internal friction (logarithmic decrement δ) of bio-carbon matrices prepared from beech tree wood at different carbonization temperatures T _carb ranging from 600 to 1600°C have been studied. The dependences E(T _carb) and δ(T _carb) thus obtained revealed two linear regions of increase of the Young modulus and of decrease of the decrement with increasing carbonization temperature, namely, ΔE ～ AΔT _carb and Δδ ～ BΔT _carb, with A ≈ 13.4 MPa/K and B ≈ ?2.2 × 10^?6 K^?1 for T _carb < 1000°C and A ≈ 2.5 MPa/K and B ≈ ?3.0 × 10^?7 K^?1 for T _carb > 1000°C. The transition observed in the behavior of E(T _carb) and δ(T _carb) at T _carb = 900–1000°C can be assigned to a change of sample microstructure, more specifically, a change in the ratio of the fractions of the amorphous matrix and of the nanocrystalline phase. For T _carb < 1000°C, the elastic properties are governed primarily by the amorphous matrix, whereas for T _carb > 1000°C the nanocrystalline phase plays the dominant part. The structurally induced transition in the behavior of the elastic and microplastic characteristics at a temperature close to 1000°C correlates with the variation of the physical properties, such as electrical conductivity, thermal conductivity, and thermopower, reported in the literature.     

Der Faraday-Effekt an amorphen Selenschichten

Cl^38m was produced by neutron activation of chlorine containing samples in a pneumatic irradiation facility. The decay of the Cl³⁸-isomer was investigated by various scintillation spectrometer technics. The half-life and the internal conversion coefficient α of the 0.66 MeV isomeric transition was found to beT _1/2=0.74±0.03 sec and α=(5.0±1.2)×10^?4. These data suggest aM-3 transition between an isomeric state with the spinI=5^? and the ground-state of Cl-38 (I=2^?).     

Pressure dependence of the absorption edge for Cd1-xMnxTe

The effect of pressure on the optical absorption edge of mixed crystals Cd_1-xMn_xTe with different manganese concentrations is reported. The observed absorption edge shifts to higher energy with increasing pressure at a rate of α=7?8×10^?3 eV/kbar and a second order coefficient of β=-4×10^?5 eV/kbar² for x<0.5, to lower energy with increasing pressure at a rate of α=-5.0 ×10^?3 eV/kbar for x?0.5. A phase transition occurs for all the samples studied. The absorption edge of the new phase is outside the wavenumber range of the instrument. The physical origins of different pressure coefficients are discussed in the light of the deformation potentials of energy band states and the hybridization of the Mn²⁺ 3d levels with the p-like states in the valence band.     

Effect of electron irradiation on the structure and properties of the MgB2 superconductor

This paper reports on the results of an investigation into the effect of irradiation of the Bardeen-Cooper-Schriefer superconductor MgB₂ by electrons with a mean energy ē ～ 10 MeV at low doses (0 ≤ Φt ≤ ～5 × 10¹⁶ cm^?2) on the lattice parameters, the intensity and width of diffraction lines, the superconducting transition temperature T _c , and the temperature dependence of the resistivity ρ(T) in the normal state. The results of structural investigations have revealed regularities in the defect formation in the magnesium and boron sublattices of the MgB₂ compound as a function of the electron fluence. At the initial stage, irradiation leads to the formation of vacancies, originally in the magnesium sublattice and then in the boron sublattice. For fluences Φt ≥ ～1 × 10¹⁶ cm^?2, vacancies are formed in both sublattices. The evolution of the electrical and physical properties [T _c , ρ_{273 K}, residual resistivity ratio RRR = ρ_{273 K}/ρ_{50 K}, parameters of the dependence ρ(T)] under electron irradiation is in agreement with the regularities revealed in the formation of radiation-induced defects in the crystal lattice of the MgB₂ compound.     

Transport and magnetic properties of multiwall carbon nanotubes before and after bromination

Bulk samples of oriented carbon nanotubes were prepared by electric arc evaporation of graphite in a helium environment. The temperature dependence of the conductivity σ(T), as well as the temperature and field dependences of the magnetic susceptibility χ(T, B) and magnetoresistance ρ(B, T), was measured for both the pristine and brominated samples. The pristine samples exhibit an anisotropy in the conductivity σ_∥(T)/σ_⊥>50, which disappears in the brominated samples. The χ(T, B) data were used to estimate the carrier concentration n ₀ in the samples: n _0ini ～3×10¹⁰ cm^?2 for the pristine sample, and n _0Br～10¹¹ cm^\t—2 for the brominated sample. Estimation of the total carrier concentration n=n _e+n _p from the data on ρ(B, T) yields n _ini=4×10¹⁷ cm^?3 (or 1.3×10¹⁰ cm^?2) and n _Br=2×10¹⁸ cm^?3 (or 6.7×10¹⁰ cm^?2). These estimates are in good agreement with one another and indicate an approximately fourfold increase in carrier concentration in samples after bromination.     

Phase transition behavior and piezoelectric properties of low-Li and high-Sb modified KNN based piezoceramics

(Na_0.5K_0.5)_0.975Li_0.025Nb_0.82−xSb_xTa_0.18O₃ lead-free piezoceramics were prepared by the conventional solid-state sintering method. All samples possess a pure perovskite phase, and no secondary phase could be certified. The crystal structure changes from tetragonal to pseudo-cubic with increasing amount of Sb. The ferroelectric Curie temperature (T_c) shifts to lower temperature while the tetragonal to orthorhombic phase transition temperature (T_o-t) shows no obvious change with increasing Sb⁵⁺. Enhanced piezoelectric and electromechanical properties are obtained with x=0.06: d₃₃=352 pC/N, k_p=47% and k_t=38%, showing that they could be promising candidates as lead-free piezoelectric materials.     

The heat capacity of the layer compounds (CH3CH2CH2NH3)2MnCl4 and (CH3CH2CH2NH3)2CdCl4 from 10 K TO 300 K

The heat capacity of the layer compounds tetrachlorobis (n-propylammonium) manganese II and tetrachlorobis (n-propylammonium) cadmium II, (CH₃CH₂CH₂NH₃)₂MnCl₄ and (CH₃CH₂CH₂NH₃)₂CdCl₄ respectively, has been measured over the temperature range 10 K ?T ? 300 K.Two known structural phase transitions were observed for the Mn compound in this temperature region: at T = 112.8 ± 0.1 K (ΔH_t= 586 ± 2 J mol^?1; ΔS_t = 5.47 ± 0.02 J K^?1mol^?1) and at T =164.3 ± (ΔH_t = 496 ± 7 J mol^?1; ΔS_t =3.29 ± 0.05 J K^?1mol^?1). The lower transition is known to be from a monoclinic structure to a tetragonal structure, while the upper is from the tetragonal phase to an orthorhombic one. From comparison with the results for the corresponding methyl Mn compound it is deduced that the lower transition primarily involves changes in H-bonding while the upper transition involves motion in the propyl chain.A new structural phase transition was observed in the Cd compound at T= 105.5 ± 0.1 K (ΔH_t= 1472.3 ± 0.1 J mol^?1; ΔS_t = 13.956 ± 0.001 J K^?1mol^?1), in addition to two transitions that have been observed previously by other techniques. The higher of these transitions(T = 178.7 ± 0.3 K; ΔH_t = 982 ± 4 J mol^?1 ΔS_t = 6.16 ± 0.02 J K^? mol^?1) is known to be between two orthorhombic structures, while the structural changes at the lower transition (T= 156.8 ± 0.2 K; ΔH_t = 598 ± 5 J mol^?1, ΔS_t = 3.85 ± 0.03 J K^?1 mol^?1) and at the new transition are not known. It is proposed that these two transitions correspond respectively to the tetragonal to orthorhombic and monoclinic to tetragonal transitions in the propyl Mn compounds.In addition to the structural phase transitions (CH₃CH₂CH₂NH₃)₂MnCl₄ magnetically orders at t? 130 K. The magnetic contribution to the heat capacity is deduced from the heat capacity of the corresponding diamagnetic Cd compound and is of the form expected for a quasi 2-dimensional Heisenberg antiferromagnet.     

The metal-nonmetal transition in NiS studied by the Mössbauer effect of 57Fe

Mössbauer spectra of ⁵⁷Fe impurities in α NiS show an abrupt collapse of the hyperfine splitting at T_t = 260 K, the nonmetal-metal transition; the extrapolated Néel point is ～420 K. Below T_t, it appears that iron adjacent to a vacancy is low-spin. There us evidence of substantial d-electrons delocalisation above T_t. β NiS does not order magnetically down to 4 K.     

Deep levels in gallium arsenide by capacitance methods

The three capacitance methods, i.e., TSCAP, PHCAP, and transient capacitance measurements, are applied to determine electronic properties of deep levels inn-GaAs. In the boat-grown wafer detected are the 0.30 eV electron trap withN _T =3.6×10¹⁶ cm^?3 andS _n =2.4×10^?15 cm², and the 0.75 eV electron trap withN _T =2.0×10¹⁶ cm^?3 andS _n =1.2×10^?14 cm². In the epitaxial wafer, the 0.45 eV hole trap is detected withN _T >1.5×10¹³ cm^?3 andS _p =1.4×10^?14 cm² as well as the 0.75 eV electron trap withN _T =2.4×10¹³ cm^?3.     

Measurement of the pressure dependence of Tc for superconducting spinel compounds

The superconducting transition temperatures (T_c) of CuRh₂Se₄, CuRh₂S₄ and LiTi₂O₄ were all found to increase linearly under hydrostatic pressure up to 22 kbar, at a rate of 1–5 × 10^-5 Kbar^-1. These results are discussed in terms of the dependence of T_c on Debye temperature previously found for this set of compounds from heat capacity measurements at zero pressure.     

Equation of state and thermal expansivity of LiF and NaF

The high-pressure and high-temperature behaviors of LiF and NaF have been studied up to 37 GPa and 1000 K. No phase transformations have been observed for LiF up to the maximum pressure reached. The B1 to B2 transition of NaF at room temperature was observed at ～28 GPa, this transition pressure decreases with temperature. Unit-cell volumes of LiF and NaF B1 phase measured at various pressures and temperatures were fitted using a P–V–T Birch–Murnaghan equation of state. For LiF, the determined parameters are: α₀ = 1.05 (3)×10^?4 K^?1, dK/dT = ?0.025 (2) GPa/K, V ₀ = 65.7 (1) Å³, K ₀ = 73 (2) GPa, and K′ = 3.9 (2). For NaF, α₀ = 1.34 (4)×10^?4 K^?1, dK/dT = ?0.020 (1) GPa/K, V ₀ = 100.2 (2) Å³, K ₀ = 46 (1) GPa, and K′ = 4.5 (1).     

Measurement of Ar(I) and Ar(II) transition probabilities in LTE ARC plasmas

The transition probabilities of two Ar(I) lines and one Ar(II) line have been measured in emission on wall-stabilized argon arc plasmas (0·5×10⁵?p, Nm^-2?3×10⁵; 10,000?T, K?20,000; 10²²?N_e, m^-3?5×10²³) using the “method of best fit (MBF)”. The results (without line-wing correction) are for Ar(I) at 714·7 nm, A_nm=5·66×10⁵ s^-1±5%; for Ar(I) at 430·0 nm, A_nm=3·40×10⁵ s^-1±5%; for Ar(II) at 480·6 nm, A_nm=8·82×10⁷ s^-1±7%. These values were not influenced by deviations from LTE, which have been observed at electron number densities n_e?10²³ m^-3. The small uncertainties were achieved after careful corrections of different sources of error.     

Magnetic moment relaxation of a shallow acceptor center in heavily doped silicon

Results of studying the temperature dependence of the residual polarization of negative muons in crystalline silicon with germanium (9×10 ¹⁹ cm ^?3 ) and boron (4.1×10 ¹⁸ , 1.34×10 ¹⁹ , and 4.9×10 ¹⁹ cm ^?3 ) impurities are presented. It is found that, similarly to n-and p-type silicon samples with impurity concentrations up to ～10 ¹⁷ cm ^?3 , the relaxation rate ν of the magnetic moment of a _μ Al acceptor in silicon with a high impurity concentration of germanium (9×10 ¹⁹ cm ^?3 ) depends on temperature as ν～T ^q , q≈3 at T=(5–30) K. An increase in the absolute value of the relaxation rate and a weakening of its temperature dependence are observed in samples of degenerate silicon in the given temperature range. Based on the experimental data obtained, the conclusion is made that the spin-exchange scattering of free charge carriers makes a significant contribution to the magnetic moment relaxation of a shallow acceptor center in degenerate silicon at T?30 K. Estimates are obtained for the effective cross section of the spin-exchange scattering of holes (σ _h ) and electrons (σ _e ) from an Al acceptor center in Si: σ _h ～10^?13 cm² and σ _e ～8×10^?15 cm² at the acceptor (donor) impurity concentration n _a (n _d )～4×10¹⁸ cm^?3.     

Frozen photoconductivity in PbTe films

We have studied PbTe films of thicknessd=200/10000 A made with telluride vapour deposition on glass substrate at room temperature. The estimate of the donor concentration ～10¹⁹ cm^?3 of the fresh-deposited film compared with the impurity content in the bulk raw material ～10¹⁷ cm^?3 shows that the donors were mainly film defects or nonstoichiometric Pb atoms. Electrical conductivity of the freshly deposited film increased with lowering of the temperature. After deposition the donors were compensated with an oxidation in the laboratory air. Transition to the thermally activated conductivity resulted from oxidation. At temperatures belowT≈100 K the resistance of the compensated films followed Mott’s ruleR=R ₀ exp(T ₀/T)^1/3. The square film value 1 Mohm andT ₀≈100 K ford=1000 A. At low temperatures an exposure to light resulted in sharp decrease of the film resistance. At liquid helium temperatures the resistance dropped 10³–10⁶ times and stayed at the low value for an indeterminate time. The heating of the film aboveT=100 K gave rise to an initial high resistive state. The critical temperatureT _c, when the frozen photoconductivity became negligible, varied with samples in the temperature region 90–120 K. Near the critical temperature we could measure the time dependence of the film resistance after the light exposure, which followed the equationR=A+B.lnt fort>1 sec with the empirical constantsA andB. After a time intervalτ the resistance gained the initial “dark” value and remained stationary. The value lnτ≈α.(T _c?T), where the factorα approximately wasα≈0.5 K^?1. Some results of these experiments were published earlier (Krylov and Nadgorny 1982; Krylov and Pojarkov 1984).     

A retarded intramultipletM1 transition in214Bi

The half-life of the 53.2 keV level in²¹⁴Bi has been measured asT _1/2=0.52±0.15 ns, furtherT _1/2(295.2 keV and 351.9 keV levels)≦0.10 ns was estimated. TheB(M1,2^?→1^?) transition rates within theπh _9/2 vg _9/2 multiplet in^210,212,214Bi are found to decrease rapidly with increasing neutron number, reaching in²¹⁴Bi a value as low as those typical for intraband M1 transitions in deformed odd-odd nuclei.     

Relaxation phenomena in TlGa<Subscript>0.99</Subscript>Fe<Subscript>0.01</Subscript>Se<Subscript>2</Subscript> single crystals

The relaxation electronic phenomena occurring in TlGa_0.99Fe_0.01Se₂ single crystals in an external dc electric field are investigated. It is established that these phenomena are caused by electric charges accumulated in the single crystals. The charge relaxation at different electric field strengths and temperatures, the hysteresis of the current-voltage characteristic, and the electric charge accumulated in the TlGa_0.99Fe_0.01Se₂ single crystals are consistent with the relay-race mechanism of transfer of a charge generated at deep-lying energy levels in the band gap due to the injection of charge carriers from the electric contact into the crystal. The parameters characterizing the electronic phenomena observed in the TlGa_0.99Fe_0.01Se₂ single crystals are determined to be as follows: the effective mobility of charge carriers transferred by deep-lying centers μ_f=5.6×10^?2 cm²/(V s) at 300 K and the activation energy of charge transfer ΔE=0.54 eV, the contact capacitance of the sample C _c =5×10^?8 F, the localization length of charge carriers in the crystal d _c =1.17×10^?6 cm, the electric charge time constant of the contact τ=15 s, the time a charge carrier takes to travel through the sample t _t =1.8×10^?3 s, and the activation energy of traps responsible for charge relaxation ΔE _σ = ΔE _Q = 0.58 eV.