铜（001）扭转晶界能的原子级计算

采用改进分析型嵌入原子法（MAEAM）计算了铜（001）未松弛扭转晶界的晶界能。结果表明，除扭转角为（完整晶体）时的能量为零外，对应和扭转角为36.87°时的晶界能为最小，和实验结果一致；对于其它扭转角，包括很小的扭转角1.94°，晶界能几乎为一常数；均匀膨胀和垂直于晶界面的膨胀都会使晶界能明显降低，尤其是后者。     

合金元素对Ag/Al界面性质影响的第一性原理研究

采用基于密度泛函理论的第一性原理方法,计算和分析Ag(111)/Al(111)界面体系的能量与电子结构,讨论Ag中加入的Be、Mg、Al、Ca、Ni、Sn合金化元素对Ag/Al界面性质的影响.结果表明:Ni原子倾向于界面处的取代位置,而Be、Mg原子倾向于靠近界面处的取代位置,Al、Ca、Sn原子倾向于远离界面处的取代位置;合金元素Be、Mg、Al、Ca、Ni、Sn的加入均会使Ag/Al界面的稳定性降低,其中Ca元素的影响程度最大,分离功降低到0.923 J/m~2,界面能增至0.703 J/m~2;通过电子结构计算结果分析认为,导致界面稳定性下降的主要原因应是合金化元素的加入使界面间形成的Ag-Al共价键强度降低引起.     

用改进嵌入原子法计算Cu晶体的表面能

用改进嵌入原子法(MEAM)计算了Cu晶体12个晶面的表面能.结果表明，密排面(111)的表面能最小.其他晶面的表面能随其晶面与(111)晶面夹角的增加而增加，据此可以粗略地估计各晶面表面能的相对大小.给出的几何结构因子的确定方法及结果可以直接用于计算其他面心立方晶体的表面能及其他特性.在Cu,Ag等面心立方薄膜中出现(111)择优取向或织构的机理是表面能的最小化. 关键词： 改进嵌入原子法 铜 表面能 计算     

载能Ni原子斜入射Pt(111)表面的分子动力学模拟

采用嵌入原子方法的原子间相互作用势,利用分子动力学模拟,详细研究不同角度入射的载能Ni原子在Pt(111)基体表面的沉积过程.结果表明,随着入射角度θ从0°增加到80°,溅射产额、表面吸附原子产额、空位产额的变化情况均可按入射角度近似地分为θ≤20°,20°＜θ＜60°和θ≥60°三个区域.当θ≤20°时,载能沉积对基...     

NH3在Ni/Pt(111)和Ni/WC(001)表面上分解的第一性原理研究

采用密度泛函理论和slab模型,研究NH₃在Ni单原子层覆盖的Pt（111）和WC（001）表面上的物理与化学行为,计算了Ni单原子覆盖表面的电子结构以及NH₃的吸附与分解.表面覆盖的单原子层中,Ni原子的性质与Ni（111）面上的Ni原子明显不同.与Ni（111）相比,Ni/Pt（111）和Ni/WC（001）表面上Ni原子dz²轨道上的电子更多地转移到了其它位置,该轨道上电荷密度降低有利于NH₃吸附.在Ni/Pt（111）和Ni/WC（001）面上NH₃吸附能均大于Ni（111）,NH₃分子第一个N-H键断裂的活化能则明显比Ni（111）面上低,有利于NH₃的分解,吸附能增大使NH₃在Ni/Pt（111）和Ni/WC（001）面上更倾向于分解,而不是脱附.N₂分子的生成是NH₃分解的速控步骤,该反应能垒较高,说明N₂分子只有在较高温度下才能生成.WC与Pt性质相似,但Ni/Pt（111）和Ni/WC（001）的电子结构还是有差异的,与Ni（111）表面相比,NH₃在Ni/Pt（111）表面上分解速控步骤的能垒降低,而在Ni/WC（001）上却升高.要获得活性好且便宜的催化剂,需要对Ni/WC（001）表面做进一步改进,降低N₂分子生成步骤的活化能.     

阻变存储器复合材料界面及电极性质研究

采用基于密度泛函理论的第一性原理对比研究了Cu（111）/HfO₂（001）,Cu（111）/HfO₂（010）,Cu（111）/HfO₂（100）三种复合材料界面模型的失配率、界面束缚能、电荷密度、电子局域函数以及差分电荷密度. 计算结果表明：Cu（111）/HfO₂（010）失配率最小,界面束缚能最大,界面体系相对最稳定;对比电荷密度及电子局域函数图显示,只有HfO₂（010）方向形成的复合材料体系出现了垂直Cu电极方向完整连通的电子通道,表明电子在此方向上具有局域性、连通性,与阻变存储器（RRAM）器件导通方向一致;差分电荷密度图显示,Cu（111）/HfO₂（010）复合材料体系界面处存在电荷密度分布重叠的现象,界面处有电子的相互转移、成键的存在;进一步计算了Cu（111）/HfO₂（010）体系距离界面不同位置的间隙Cu原子形成能,表明越靠近界面Cu原子越容易进入HfO₂ 体内,在外加电压下易发生电化学反应,从而导致Cu导电细丝的形成与断裂. 研究结果可为RRAM存储器的制备及性能的提高提供理论指导和设计工具. 关键词： 阻变存储器 复合材料 界面 电子通道     

MnSb/GaSb(001)界面半金属特性的第一性原理研究

利用密度泛函理论计算六角NiAs型和立方闪锌矿型MnSb的电子和电磁特性,研究闪锌矿MnSb与GaSb(001)界面,并采用广义渐变近似计算了交换-相关项．闪锌矿结构的MnSb具有半金属铁磁特性,单分子磁矩4μB,MnSb/GaSb(001)界面同样具有半金属特性．界面中Mn原子的磁矩减小,界面中Sb原子磁矩等于两个相应界面磁矩的平均值．另外计算了能带排列在异质结中价带偏移大约1.25 eV.     

用低能电子衍射计算Ni(001)Ni(110)和Ni(111)表面化学吸附硫的表面原子层间距

在本文里,我们用一维的能带理论计算了Ni(001)、Ni(110)和Ni(111)表面化学吸附硫的表面原子层间距d_s。我们发现,当Ni(001)C(2×2)-S、Ni(110)C(2×2)-S和Ni(111)P×(2×2)-S表面的d_s分别等于1.291±0.01(?),0.929±0.01(?)和1.390±0.01(?)时。显示出,理论计算的LEED谱与实验非常一致.     

Ag/Cu(111)与Au/Cu(111)体系异质外延岛演化过程中的应变释放及其对Moiré结构形成的影响

采用嵌入原子方法的原子间相互作用势，利用分子动力学模拟方法研究了Au/Cu(111)和Ag/Cu (111)体系的异质外延结构特征以及外延岛形貌和应变释放的演化过程. 通过对比Au/Cu(111)和Ag/Cu (111)体系的异质外延结构及外延岛演化行为，揭示了导致Ag/Cu (111)体系中异质外延层形成Moiré结构的微观物理机理及其与外延体系的宏观物理特性之间的关系. 研究结果显示，外延岛原子与基体表面原子之间的界面结合强度是形成Moiré结构的重要因素，异质外延体系的界面结合强度取决于二者的合金熔解热. 当异质外延体系的合金熔解热为正值时，界面结合强度较弱，有利于Moiré结构的形成. 同时，外延岛原子之间的相互作用决定着外延岛的面内弛豫行为，对Moiré结构的形成有一定的影响. 外延岛的面内弛豫行为与外延层和基体之间的相对刚度有关，弹性模量较大的外延层具有较强的延展能力，对Moiré结构的形成有利. 此外，Moiré结构的形成与外延岛的尺度有关，主要是外延岛边界原子的钉扎作用对外延岛内原子弛豫行为的约束作用的影响.     

半导体异质结(111)面的界面偶极子及其对能带偏移的影响

本文采用紧束缚的界面键极性模型(interface-bond-polarity-model),计算了匹配的半导体异质结(111)面的界面偶极子,并将计算结果与(110)和(001)面的结果进行了比较,讨论了界面取向和界面成分对偶极子的影响。结果表明,对于两边同是Ⅲ-V族半导体或同是Ⅱ-Ⅵ族半导体的异质结,界面偶极子几乎不依赖于界面的取向和界面的组成,因此,能带偏移也基本上是各向同性的。对于两边由不同类型半导体组成的异质结,如Ⅱ-Ⅵ/Ⅲ-Ⅴ体系、Ⅲ-Ⅴ/Ⅳ和Ⅱ-Ⅵ/Ⅳ体系,混和的阴离子(111)界面给出的偶极子小于零,而混和的阳离子(111)界面给出的偶极子大于零,二者的平均值等于中性的(110)界面的偶极子。 关键词：     

Scattering of low energy Na+ ions from a clean polycrystalline Ag surface

The energy distributions of low energy (E₀ = 0.4–3.2 keV) Na⁺ ions scattered from a clean polycrystalline Ag surface were measured. The angle between the incident beam and the surface was fixed at ψ = 45° while the scattering angle (θ) ranged from 50 to 130°. The cleanliness of the surface during the measurement was maintained by simultaneous deposition of Ag atoms from an effusion source. The obtained distributions considerably differ from the corresponding distributions of noble ions. Firstly, for all measured values of E₀ and θ, an intensive hump is observed in the high energy part of the distribution. In certain cases this hump is transformed into a peak. Secondly, the low energy part of the distribution is very pronounced, especially for higher values of E₀ and θ.     

Energy calculation of (0 1 1) twist grain boundary in noble metals

With modified analytical embedded atom method (MAEAM), the energy of (0 1 1) twist grain boundary (GB) has been calculated for three noble metals Cu, Ag and Au. The results show that the unrelaxed energy keeps almost constant with twist angle θ except several cusps at low Σ boundaries. The GB energies drop significantly after expansion perpendicular to the boundary. In-boundary translation results in a periodic energy variation and the rectangular period is 1/Σ of their own CSL smallest unit cell. Three specific positions, the corners or centre of the periodic rectangle, or the midpoints of the sides, are preferable in GB translation.     

Regularity of self-organization of the atomic structure of the interphase boundary in a crystal-nanoparticle heterosystem

The structure of the (001) fcc/(001) fcc interphase boundary of a system consisting of a hemispherical Ni (or Cu) crystal nanoparticle and a Pd crystal substrate was studied depending on the nanoparticle rotation angle θ = 15°, 20°, 25°, and 30°. A molecular dynamics simulation including multiparticle potentials calculated in the framework of the embedded atom method was used in this study. It was shown that, under given annealing conditions, the nanoparticle rotation depends on the size; namely, the annealing of small nanoparticles leads to their rotation to the position corresponding to the coincidence orientation at the interphase boundary, while the position of large islands remains practically unchanged. It was established that the atomic rearrangement at the interphase boundary affects only lattices with a larger parameter.     

Point-defect properties of,and sputtering events in,the {001} surfaces of Ni3Al. II. Sputtering events at and near surfaces

Atomic recoil events at and near {001} surfaces of Ni₃Al due to elastic collisions between electrons and atoms have been simulated by molecular dynamics to obtain the sputtering threshold energy as a function of atomic species, recoil direction and atomic layer of the primary recoil atom. The minimum sputtering energy occurs for adatoms and is 3.5 and 4.5?eV for Al and Ni adatoms on the Ni–Al surface (denoted ‘M’), respectively, and 4.5?eV for both species on the pure Ni surface (denoted ‘N’). For atoms within the surface plane, the minimum sputtering energy is 6.0?eV for Al and Ni atoms in the M plane and for Ni atoms in the N surface. The sputtering threshold energy increases with increasing angle, θ, between the recoil direction and surface normal, and is almost independent of azimuthal angle, ?, if θ<60°; it varies strongly with ? when θ>60°, with a maximum at ??=?45° due to ?{110}? close-packed atomic chains in the surface. The sputtering threshold energy increases significantly for subsurface recoils, except for those that generate efficient energy transfer to a surface atom by a replacement collision sequence. The implications of the results for the prediction of the mass loss due to sputtering during microanalysis in a FEG STEM are discussed.     

Strong interaction of an Al2Cu intermetallic precipitate with its boundary

NMR, X-ray diffraction (XRD) and transmission electron microscopy (TEM) experiments have been undertaken to establish the nature of Ω-platelets which form during heat treatment of aluminium alloys containing Cu, Mg (Mg lean) and Ag of the order of 0.1 at. % [1]. The platelets lie on (111) planes of the Al host lattice, separated from the Al on either face by a thin layer, one or two atoms thick, of Mg and Ag atoms. At temperatures between 185°C and 250°C the platelets have been previously shown to coarsen (thicken) slowly with time but more rapidly at 300°C [2,3]. TEM observations are described which confirm that the platelets remain on (111)_α for heat treatments up until at least 5?h at 300°C. The NMR and XRD results indicate that for thick platelets the bulk of the platelet material, sufficiently distant from the two bounding interfaces, is exactly tetragonal Al₂Cu θ-phase, but that platelets of the order of 2–4?nm thick (e.g. 100?h at 185°C) have a structure strongly influenced by interaction with the platelet boundary, which removes the axial symmetry of the Cu atom. Both NMR and XRD observations have shown a gradual transition between these two limits.     

Pulsed KrF laser deposited GaN/TiN/Si(111) heterostructures by sequential TiN and liquid Ga laser ablation

GaN/TiN heterostructures were deposited on 4° miscut Si(111) substrates by pulsed KrF laser ablation of TiN through vacuum, followed by reactive pulsed KrF laser ablation of liquid Ga through 70-75 mTorr of microwave-activated NH₃. Deposition temperatures of 950 °C and 1050 °C were employed for the TiN layer while 900 °C was employed for the GaN layer. The targets were positioned 5 cm from the substrate and ablated by using a reimaging beamline at a nominal energy density of 3-4 J/cm². X-ray diffraction (XRD) revealed a highly textured heterostructure with GaN(0001)//TiN(111)//Si(111) and with a rocking curve width for both GaN(0001) and TiN(111) equal to ~1.1°. The mosaic spread through the TiN(001) reflection was ~1.3°, whereas that of the GaN(101_1) was undetectable because of low S/N. Scanning electron microscopy revealed large oriented 10 7m-sized hexagonal crystallites decorating large depressions in the TiN film with many smaller pits also present. The effect of substrate processing and TiN film processing on pit formation was explored.     

The angular dependence of flux,mean energy and speed ratio for D2 molecules desorbing from a Ni(111) surface

Experimental data are presented for the angular dependence of the relative flux, the mean energy and the speed ratio of deuterium molecules desorbing from a Ni(111) crystal surface at a surface temperature of T_s = 1143 K and at sulphur coverages ranging between 30% and less than 2% of a monolayer.The angular flux distribution is sharply peaked in the forward direction (cos^dθwith 3 ? d ? 5) and the mean energy 〈E〉 of the desorbate depends strongly on the desorption angle θ. For normal desorption $\text{(θ = 0°)}\text{〈E〉}\text{2k}$ is about 700 K higher than T_s and for glancing angles (θ = 80°) it decreases to about 400 K below T_s The results obtained on sulphur free and sulphur covered Ni(111) surfaces are compared with our former data on polycrystalline nickel. The main differences in the kinetic features can be ascribed to the surface roughness. Accordingly, the angular distributions of flux, mean energy, and speed ratio, which deviate strongly from the Knudson and Maxwellian law, do not seem to depend considerably on sulphur coverage and surface structure. A qualitative explanation for these deviations is presented using the principle of detailed balancing.     

MD simulation of nanoindentation on (001) and (111) surfaces of Ag–Ni multilayers

We perform MD simulations of the nanoindentation on (001) and (111) surfaces of Ag–Ni multilayers with different modulation periods, and find that both the hardness and maximum force increase with the increase of modulation period, in agreement with the inverse Hall–Petch relation. A prismatic partial dislocation loop is observed in the Ni(111)/Ag(111) sample when the modulation period is relatively large. We also find that misfit dislocation network shows a square shape for the Ni(111)/Ag(111) interface, while a triangle shape for the Ni(001)/Ag(001) interface. The pyramidal defect zones are also observed in Ni(001)/Ag(001) sample, while the intersecting stacking faults are observed in Ni(111)/Ag(111) sample after dislocation traversing interface. The results offer insights into the nanoindentation behaviors in metallic multilayers, which should be important for clarifying strengthening mechanism in many other multilayers.     

Calculation of the surface energy of fcc metals with modified embedded-atom method

The surface energies for 38 surfaces of fcc metals Cu, Ag, Au, Ni, Pd, Pt, A1, Pb, Rh and Ir have been calculated by using the modified embedded-atom method. The results show that, for Cu, Ag, Ni, A1, Pb and Ir, the average values of the surface energies are very close to the polycrystalline experimental data. For all fcc metals, as predicted, the close-packed (111) surface has the lowest surface energy. The surface energies for the other surfaces increase linearly with increasing angle between the surfaces (hkl) and (111). This can be used to estimate the relative values of the surface energy.