B掺入Cu∑5晶界间隙位性质的第一性原理研究

本文采用第一性原理方法对清洁Cu∑5晶界与有B掺杂 到间隙位的Cu∑5晶界进 行了拉伸和压缩的模拟研究. 结果分析表明, Cu∑ 5晶界结合因B的掺入得到加强. 清洁Cu∑5晶界处因有较大空隙而存在电子密度低的区域, 晶界结合相对较弱, 在拉伸过程中晶界从其界面处开始断裂. 有B掺杂在间隙位的Cu∑5晶界电子由Cu向Cu-B间积聚, 晶界结合相对较强, 拉伸时晶界从其近邻原子层开始断裂. 在形变小于20%的压缩过程中, B的掺入未对晶界产生明显影响. 关键词： 第一性原理 Cu晶界 B掺杂 拉伸压缩     

Al晶界的第一性原理拉伸试验

基于密度泛函理论和局域密度近似的第一性原理方法，进行了Al晶界的第一性原理拉伸试验.得到Al晶界的理论拉伸强度为9.5 GPa，对应的应变为16%.根据价电荷密度、键长和原子构型随应变的变化，我们证实断裂发生在晶界面，其特征是所有界面键的断裂.同时还发现在周围原子键的数目减少的情况下，界面重构的Al-Al原子键具有共价键的性质.因此Al晶界依然保持着较高的界面强度. 关键词： Al晶界 第一性原理拉伸试验 理论拉伸强度     

Sr偏析Al晶界结构的第一性原理计算

采用基于密度泛函理论和局域密度近似的第一性原理赝势方法,计算了纯Al晶界和杂质Sr偏析Al晶界的原子结构和电子结构.结果表明Sr偏析引起了晶界膨胀和晶界处电子密度的大幅度降低,从而导致晶界结合力的减弱.这应为Sr杂质偏析引起的Al晶界脆化的主要根源所在. 关键词： Al晶界 Sr 杂质偏析 第一性原理计算     

含扭转晶界位错Al金属拉伸强度第一性原理预测

本文基于密度泛函理论第一原理方法,从影响力学性能本质的电子结构计算上,对含Σ 5{001}扭转晶界位错Al金属拉伸强度进行了预测,发现其理论拉伸强度达到8.73 GPa,临界应变为 24%.拉伸强度低于文献报道(Phys. Rev. B 75, 174101 (2007))的倾斜晶界位错Al金属的理论拉伸强度9.5 GPa,但其临界应变却远大于倾斜晶界的16%.本研究结果表明,通过工艺参数控制,改变缺陷形态,可极大地改变其力学性能.进一步地,从电子结构层次上, 分析了含晶界位错Al金属拉伸断裂行为的实质,通过分析电荷密度分布、键长变化等,发现其断裂处发生在晶界处;理论计算结果将对Al金属结构设计及力学性能改善具有重要的指导作用.     

金属有机化学气相淀积技术制备GaMnN薄膜材料光学性质研究

研究由MOCVD 技术制备的 GaMnN 外延薄膜光吸收谱.实验发现Mn掺杂后较未掺杂GaN吸收系数在近紫外区增加,在吸收谱低能区144 eV附近观察到吸收峰,吸收系数随Mn浓度的增加而增大.实验结果与基于密度泛函理论的第一性原理计算结果一致,结合理论计算分析认为144 eV附近的吸收峰源于Mn³⁺离子e态与t₂态间的带内跃迁⁵T₂→⁵E. 关键词： GaMnN MOCVD 密度泛函理论 光学性质     

Fe的结构与物性及其压力效应的第一性原理计算

采用基于密度泛函理论的平面波赝势方法，计算了Fe的几种不同晶体结构的总能量曲线，对HCP结构下晶体结构参数c/a随压强的变化关系做计算分析. 能量计算精度取为0.01 eV/atom. 计算得出： 1) 零温下Fe从bcc到hcp结构的相变压强约为15 GPa，与实验结果相一致； 2) 压强的升高会导致Fe的磁矩减小，最终破坏Fe的磁性； 3) 压强升高引起hcp晶体结构参数c/a缓慢增大，而在地核压强(135—360 GPa)范围内，c/a取常量约1.59能够满足计算精度的要求. 关键词： 第一性原理计算 压力效应 Fe的结构与物性     

第一性原理研究Mg，Si和Mn共掺GaN

采用基于密度泛函理论(DFT)的第一性原理平面波赝势法(PWP)计算Mg,Si和Mn共掺GaN电子结构和光学性质,分析比较计算结果.计算表明：掺杂后体系均在能隙深处产生自旋极化杂质带,具有半金属性,能产生自旋注入.与Mn掺杂GaN比较,Mg共掺后能使居里温度(T_C)升高,并在1.0eV出现源于Mn⁴⁺离子基态⁴T₁(F)到⁴T_{2关键词： Mg Si和Mn共掺GaN 电子结构 TC)')" href="#">居里温度(TC) 光学性质}     

稀土La在α-Fe中占位倾向及对晶界影响的第一性原理研究

本文采用重合位置点阵理论构建了α-Fe的Σ3[110](112)对称倾转晶界模型,通过基于密度泛函理论的平面波超软赝势方法研究了稀土La元素在α-Fe中的占位倾向.结果表明,La在α-Fe晶界的杂质形成能最低,因而La原子倾向于占据晶界区;掺杂La前后的α-Fe晶界电子结构计算结果显示,La占位于α-Fe晶界会使体系中的电荷发生重新分配,将提供更多电子用于晶界区成键,使得Fe原子得到更多的电子,这将导致掺杂区原子间结合有离子化趋势,从而使La与晶界区相邻Fe原子之间的相互作用加强,也使晶界原子与晶界两侧Fe原子的键合加强,从能量角度解释了材料宏观力学性能变化的原因;计算同时发现,La加入后,也使晶界上的原子成键区态密度左移,降低了体系的总能量,使晶界结构更为稳定.     

碳纳米管增强铝基复合材料电子理论研究

采用自行开发计算机软件，建立了铝晶粒大角度重位点阵晶界模型及碳纳米管与铝金属的界面结构，利用递归法计算了纳米碳管增强铝基复合材料的电子结构参数(铝晶界、铝与纳米管界面及纳米管的结构能，体系费米能级等). 计算结果表明：Σ为5的晶界结构能最低，比较稳定；纳米碳管在铝晶粒的晶界处与铝形成的界面结构能较低，复合材料中纳米碳管主要分布在铝晶粒的晶界处；铝提高纳米碳管的结构能，降低纳米碳管的稳定性，增强碳管的物理化学活性，且管口处的碳原子稳定性较差，易与周围环境中的原子结合生成稳定结构. 关键词： 电子结构 晶界 铝复合材料 纳米管     

H掺杂α-Fe2O3的第一性原理研究

α-Fe₂O₃是一种重要的磁性半导体材料, 在电子器件中应用广泛, 具有重要的研究意义. 本文基于密度泛函理论, 采用GGA+U方法, 应用第一性原理对间隙H掺杂前后的六方相α-Fe₂O₃的晶格常数、态密度、Bader 电荷分布进行了计算分析. 研究了U值对结果的影响, 发现U=6 eV时, 体相α-Fe₂O₃的晶胞平衡体积、Fe原子磁矩、带隙值与实验值最符合. 在选取合适U值后, 第一性原理计算结果表明, H掺杂后, 间隙H部分被氧化, 其最近邻的Fe 和O部分被还原, H和O有一定程度的成键. 在费米面附近, 出现了新的杂化能级, 杂化能级扩展了价带顶的宽度, 同时导带底下移, 引起带隙减小, 表明H掺杂是一种有效的能带结构调控方法.     

First-principles study on the tensile strength and fracture of the Al-terminated stoichiometric α-Al2O3(0001)/Cu(111) interface

The first-principles tensile tests have been applied to the Al-terminated stoichiometric α-Al₂O₃(0001)/Cu(111) interface by using the ab initio pseudo-potential method based on the density-functional theory. Firstly, the Cu/Al and Cu/Cu interlayers have been examined by the rigid-type tensile test. The interlayer potential curves derived from the first-principles calculations are well fitted by the universal binding-energy relation (UBER) curves. The Cu–Al adhesion is weaker than the back Cu–Cu adhesion. Secondly, the relaxed-type tensile test has revealed the tensile strength and features of interfacial fracture. The ideal tensile strength is about 10?GPa, and the local Young's modulus is about 40?GPa, which means that the Cu/Al interface is quite weak and soft compared with the bulk regions and the O-terminated interface. The failure is initiated from the charge depletion region near the interfacial O atoms when the interlayer stretching exceeds about 30%, and the behaviour of electrons and ions indicates no strong Cu–O bond compared with substantial Cu–Al interactions. The present ab initio data are useful for the construction of effective interatomic potentials at the interface.     

Phase transformations in calcite from electrical impedance measurements

The phase transformation in calcite I-IV-V and calcite ? aragonite have been characterized by electrical impedance measurements at temperatures 600–1200°C and pressures 0.5–2.5?GPa in a piston cylinder apparatus. The bulk conductivity σ has been measured from Argand plots in the frequency range 10⁵–10^?2?Hz in an electric cell representing a coaxial cylindrical capacitor. The synthetic polycrystalline powder of CaCO₃ and natural crystals of calcite were used as starting materials. The transformation temperature T_c was identified from resistivity-temperature curves as a kink point of the activation energy. At pressure above 2?GPa in ordered phase calcite I, the activation energy E _σ is c. 1.05?eV, and in disordered phase calcite V E _σ is c. 0.75?eV. The pressure dependence of T_c for the rotational order–disorder transformation in calcite is positive for pressures <1?GPa and negative for pressures >1?GPa. The transformation boundary of calcite 1–IV is observed only during first heating in samples after a long annealing at low temperatures. The activation energy of calcite I???IV decreases gradually from 1.8 to 1.05?eV with the pressure increase from 0.5 to 2?GPa. The kinetics of calcite ? aragonite transformation has been monitored by measuring a time-variation of the electrical resistance of a calcite sample at 10³?Hz in the stability P-T field of aragonite. The variation of the impedance correlates with the degree of phase transformation, estimated from X-ray powder diffraction studies on quenched products of experiments. The kinetics of calcite ? aragonite transformation may be fitted to the Avrami kinetics with the exponent m???1–1.5.     

A new superhard carbon allotrope: Orthorhombic C20

A new superhard carbon orthorhombic allotrope oC20 is proposed, which exhibits distinct topologies including C4, C3 and two types of C6 carbon rings. The calculated elastic constants and phonon spectra reveal that oC20 is mechanically and dynamically stable at ambient pressure. The calculated electronic band structure of oC20 shows that it is an indirect band gap semiconductor with a band gap of 4.46 eV. The Vickers hardness of oC20 is 75 GPa. The calculated tensile and shear strength indicate that the weakest tensile strength is 64 GPa and the weakest shear strength is 48 GPa, which means oC20 is a potential superhard material.     

First-principles study on the mechanics,optical, and phonon properties of carbon chains

Besides graphite, diamond, graphene, carbon nanotubes, and fullerenes, there is another allotrope of carbon, carbyne,existing in the form of a one-dimensional chain of carbon atoms. It has been theoretically predicted that carbyne would be stronger, stiffer, and more exotic than other materials that have been synthesized before. In this article, two kinds of carbyne, i.e., cumulene and polyyne are investigated by the first principles, where the mechanical properties, electronic structure, optical and phonon properties of the carbynes are calculated. The results on the crystal binding energy and the formation energy show that though both are difficult to be synthesized from diamond or graphite, polyyne is more stable and harder than cummulene. The tensile stiffness, bond stiffness, and Young's modulus of cumulene are 94.669 eV/?A,90.334 GPa, and 60.62 GPa, respectively, while the corresponding values of polyyne are 94.939 eV/?A, 101.42 GPa, and60.06 GPa. The supercell calculation shows that carbyne is most stable at N = 5, where N is the supercell number, which indicates that the carbon chain with 10 atoms is most stable. The calculation on the electronic band structure shows that cumulene is a conductor and polyyne is a semiconductor with a band gap of 0.37 eV. The dielectric function of carbynes varies along different directions, consistent with the one-dimensional nature of the carbon chains. In the phonon dispersion of cumulene, there are imaginary frequencies with the lowest value down to-3.817 THz, which indicates that cumulene could be unstable at room temperature and normal pressure.     

Total cross section measurements for charge exchange of He++ ions with He and Ar atoms

Total charge exchange cross sections were measured for He⁺⁺ in He and Ar gas in the energy range from 50 to 540 eV using a single beam apparatus. For He⁺⁺ in He the measured cross section is in agreement with calculations for symmetric resonant charge exchange. For He⁺⁺ in Ar the cross section for charge exchange decreases with decreasing energy below 300 eV. The measured cross section suggests the formation of Ar⁺ ions to be more important at lower energies and the production of Ar⁺⁺ to be dominant at higher energies.     

基于密度泛函理论探究拉伸应变对MoS2光电性能影响

本文用基于密度泛函理论的第一性原理方法研究了拉伸应变对MoS₂光电性能的影响.发现:稳定性最强的为本征MoS₂,最弱的为拉伸形变为30%的MoS₂模型.拉伸形变使Mo-S原子键长增大,周围电荷密度降低,键强减弱,并可以一定程度上改变Mo-S原子最外层电子的杂化强度及价带顶和导带底的电子移动.不同拉伸形变MoS₂模型对应的反射系数,随着拉伸应变的增加,反射峰值也逐渐增大.且频率范围在8.8 eV-9.15 eV区间内,紫外光处有较高的透光率,有望用于制备紫外光传感器等材料.     

Molecular dynamics simulations of point defects in plutonium grain boundaries

A modified analytic embedded atom method (MAEAM) potential is constructed for fcc updelta-Pu. Molecular dynamics (MD) simulations with the potential are performed to investigate the interactions between two symmetrical tilt grain boundaries (GBs) and point defects such as He atom, vacancy and self-interstitial atom (SIA) in Pu. The calculated results show that point defect formation energies are on average lower than those in the lattice but variations from site to site along the GBs are very remarkable. Both substitutional and interstitial He atoms are trapped at GBs. Interstitial He atom is more strongly bound at the GB core than the substitutional He atom. The binding energy of SIA at GB core is higher than those of He atom and vacancy. GB core can bind many He atoms and SIAs due mainly to the fact that it contains many vacancies. Compared with He atom and SIA, the vacancy far from GB core is difficult to diffuse into the core. The GBs can act as sinks and sources of He atoms and SIAs, which may be a reason for the swelling of Pu after a period of self-irradiation because of the higher concentration of vacancy in the bulk.     

Ab initio calculations of yttrium nitride: structural and electronic properties

Using first principles total energy calculations within the full-potential linearized augmented plane wave method, we have studied the structural and electronic properties of yttrium nitride (YN) in the three phases, namely wurtzite, caesium chloride and rocksalt structures. The calculations are performed at zero and under hydrostatic pressure. In agreement with previous findings, it is found that the favored phase for YN is the rocksalt-like structure. We predict that at zero pressure YN in the rocksalt structure is a semiconductor with an indirect bandgap of 0.8 eV. A phase transition from a rocksalt to a caesium chloride structure is found to occur at ∼134 GPa. Besides, a transition from an indirect (Γ−X) bandgap semiconductor to a direct (X−X) one is predicted at pressure of ∼84 GPa. For the electron effective mass of rocksalt YN, these are the first results, to our knowledge. The information derived from the present study may be useful for the use of YN as an active layer in electronic devices such as diodes and transistors.