CdS:Mn/SiO2复合纳米颗粒的反常的磁学特性

采用反胶束法,合成了硅土包裹的Mn2+掺杂的CdS纳米颗粒。利用高分辨透射电镜(HRTEM)和电子自旋共振谱 (EPR) 对这些纳米颗粒的结构进行了表征。利用超导量子干涉磁力计（SQUID）测量了这些纳米颗粒在低温下的磁学特性。研究结果表明：扩散在硅土基质中的CdS:Mn纳米颗粒的磁滞回线相对于磁场轴有明显的偏移,而有致密包裹层SiO2的CdS:Mn纳米颗粒却使磁滞回线的偏移消失,对于磁性纳米颗粒在磁化过程中出现的这一奇特的现象进行了合理的解释。     

CdS:Mn/SiO2复合纳米颗粒的反常的磁学特性

采用反胶束法,合成了硅土包裹的Mn2+掺杂的CdS纳米颗粒。利用高分辨透射电镜(HRTEM)和电子自旋共振谱 (EPR) 对这些纳米颗粒的结构进行了表征。利用超导量子干涉磁力计（SQUID）测量了这些纳米颗粒在低温下的磁学特性。研究结果表明：扩散在硅土基质中的CdS:Mn纳米颗粒的磁滞回线相对于磁场轴有明显的偏移,而有致密包裹层SiO2的CdS:Mn纳米颗粒却使磁滞回线的偏移消失,对于磁性纳米颗粒在磁化过程中出现的这一奇特的现象进行了合理的解释。     

溶剂热再结晶合成由纳米颗粒自组装成的一维CdS纳米棒

采用两种不同的溶剂热路径合成出了不同形貌和尺寸的CdS纳米晶, 一种是以无水乙二胺(en) 为溶剂, CdCl₂·2.5H₂O和硫脲(H₂NCSH₂N) 为镉源和硫源, 在不同反应温度(160 ℃-220 ℃ 下制备出了CdS纳米晶, 讨论温度对CdS纳米晶生长的影响; 另一种是以en为溶剂, 将在160 ℃下合成的产物在200 ℃下原位再结晶生长2-8 h, 分析原位生长时间对CdS纳米晶生长的影响. 通过X射线衍射(XRD)、 扫描电子电镜(SEM) 和透射电子电镜(TEM) 等表征产物的物相、 形貌和微结构, 分析可知: 两种路线合成的产物均为六方相CdS; 当温度为160 ℃时, 产物形貌为纳米颗粒状, 当温度高于160 ℃时, 产物为CdS纳米棒状; 同时, 在200 ℃下原位再结晶生长不同时间后发现产物形貌由纳米颗粒转变为纳米棒, 通过场发射扫描电镜(HRTEM) 分析可知: 纳米棒是由零维纳米颗粒自组装而成. 最后, 讨论了影响产物CdS纳米晶形貌转变的因素和纳米棒的生长机理.     

掺杂Mn2+的浓度对CdS纳米颗粒光致发光的影响

采用反胶束法,合成了硅土包裹的掺有不同浓度的Mn2 的CdS纳米颗粒.高分辨电镜表明这些颗粒的直径小于5 nm.仅仅改变Mn2 的掺杂浓度,研究了这些颗粒的光致发光谱和光致发光激发谱,结果表明:Mn2 浓度的大小对掺杂CdS纳米颗粒的发光产生了重要的影响.通过电子顺磁共振谱的测量和分析揭露了Mn2 浓度影响这些掺杂颗粒发光效率的原因.     

CdS/ZnO纳米复合结构的制备、表征及其光催化活性的改善

利用简单的水热法在ZnO纳米棒表面合成CdS纳米粒子.用扫描电镜(SEM)和X射线衍射(XRD)对CdS/ZnO异质结构进行表征.实验结果表明,在生长CdS的过程中ZnO被逐渐地腐蚀.选择CdS/ZnO纳米复合材料作为光催化剂在紫外光和绿光照射的条件下降解甲基橙(MO).CdS/ZnO纳米复合材料纳米棒作为光催化剂降解...     

CdS纳米颗粒填充的自支撑多孔硅光致发光特性

为了研究CdS纳米颗粒填充的自支撑多孔硅的光致发光特性,选用电阻率为0.01~0.02Ω·cm的P型硅片,先采用二步阳极氧化法制备自支撑多孔硅,再利用电泳法将CdS纳米颗粒填充入该自支撑多孔硅中.采用扫描电子显微镜、X射线能谱分析、X射线衍射分析、光致发光谱分析对所制备样品的形貌、相结构、组份及发光性能进行研究.实验结果表明:自支撑多孔硅内部成功填充了CdS纳米颗粒,该CdS纳米颗粒衍射峰为(210);CdS纳米颗粒填充的自支撑多孔硅光致发光峰峰位发生红移,且从570nm转移到740nm;电泳时间直接影响CdS纳米颗粒的填充量,导致相关的发光峰强度及发光峰位明显不同.     

尺寸相关的CdS纳米颗粒的拉曼散射特性

采用反胶束法,合成了具有不同尺寸的CdS纳米颗粒。利用透射电镜(TEM)和高分辨透射电镜(HR-TEM)以及紫外-可见光吸收谱(UV/vis)对这些纳米颗粒的结构特性进行了表征和分析。利用拉曼光谱仪测量了这些具有不同尺寸的CdS纳米颗粒的拉曼特性。研究结果表明：当纳米颗粒尺寸小于一定值时,拉曼峰出现了蓝移,大于一定值时出现了红移,这些不同的结果是与纳米颗粒的尺寸效应以及纳米颗粒结构中具有各向异性的电子－声子耦合作用有关。     

CdS纳米粒子的微波法制备及其光谱特性研究

用微波法以硫代乙酰胺为硫源,成功合成了CdS纳米粒子。透射电子显微镜(TEM）对合成的CdS纳米粒子的表征结果为粒径约12 nm, 粒径分布较为均匀,分散性较好。研究了微波功率、pH值、反应时间等因素对其吸收光谱,荧光光谱和粒径的影响。结果表明,在微波功率为30％、初始反应pH 9.0、微波反应时间为25 min时,可合成质量较高的CdS纳米粒子。比较了以硫代乙酰胺、硫脲和硫化钠为硫源合成的CdS纳米粒子,结果表明,以硫代乙酰胺为硫源合成的CdS纳米粒子荧光带边发射强,缺陷发射弱,荧光性质较好;而以硫脲为硫源合成的CdS纳米粒子荧光边带发射弱;以硫化钠为硫源合成的CdS纳米粒子荧光以缺陷发射为主。铜离子在6.4～512 μg·L-1范围内对该纳米粒子荧光的猝灭呈现良好线性, 可用于痕量铜离子的测定。     

g-C3N4/CdS异质结紫外-可见光电探测器的制备及其性能研究

通过热聚法以三聚氰胺为原料制备g-C_3N_4纳米片,然后采用化学水浴法生长CdS纳米颗粒,进而成功构筑g-C_3N_4/CdS异质结构。采用扫描电子显微镜,X射线衍射仪和X射线光电子能谱仪对样品的微观形貌、晶体结构和化学成分进行表征。结果表明,CdS纳米颗粒为六方纤锌矿结构,且均匀致密地附着在g-C_3N_4纳米片表面;g-C_3N_4/CdS探测器能够在零偏压工作条件下对紫外光有较好的光响应,且光电流值较g-C_3N_4纳米片探测器提高了约8倍。此外,g-C_3N_4/CdS探测器在可见光区也表现出良好的光响应,对蓝光和绿光多个周期探测的结果也表明其具有稳定性和循环性。     

有机溶剂热生长技术制备纳米CdS及其与聚苯胺复合膜的光学性能

以溶剂热生长技术(solvothermal technique)制备了半导体CdS的纳米微粒,并采用XRD、TEM、ED对其结构进行表征。在ITO导电玻璃上,采用电化学方法合成聚苯胺薄膜,以提拉的方法将CdS的纳米颗粒涂布其上,自组装得纳米CdS／PANI膜,并以荧光光谱(PL)及非线性Z-扫描法研究其光学特性。实验结果显示：经CdS修饰后,CdS／PANI膜的荧光发射峰强度增强,位置较单一PANI膜移至420nm处,同时经修饰后的复合物膜的非线性光学特性也有显著的提高。     

Strong enhancement of band-edge photoluminescence in CdS nanocrystals prepared by one-step aqueous synthesis method

CdS nanocrystals were prepared by a simple one-step aqueous synthesis method using thioglycolic acid (TGA) as the capping molecule. The effects of Cd precursor concentration and the TGA/Cd molar ratio on the photoluminescence properties of the CdS nanocrystals were investigated. It was found that both the remained free cadmium monomers and Cd-(SR)_x complexes played an important role in the nanocrystal nucleation growth and surface reconstruction. CdS nanocrystals with desired surface state could be obtained at high Cd precursor concentration and low TGA/Cd molar ratio.     

CdSe/CdS核壳纳米晶微波水热法一步合成与发光光谱分析

采用微波水热法一步合成了核壳结构的CdSe/CdS纳米晶,讨论了巯基丙酸中S^2-的释放过程对纳米晶生长的影响。XRD和Raman光谱结果表明,140℃合成温度下获得了CdSe/CdS核壳结构的纳米晶。FTIR光谱结果表明,巯基丙酸随时间的分解有助于CdS壳层的形成。PL光谱呈现出CdSe纳米晶的带间发射和缺陷发射,随着核壳结构的形成,CdSe纳米晶的表面缺陷被抑制,相关的荧光发射减弱。     

SELF-ASSEMBLY AND POLARIZABILITY OF CAPPED CdS NANOCRYSTALS ON SILICON SURFACES

The zinc-blende CdS nanocrystals with particle size less than 10nm were prepared in solution with a molecular surfactant. The particle surface was modified with capping molecules, bis(2-ethylhexyl) sulfosuccinate disodium salt (AOT) or hexametaphosphate (HMP). The colloid solution was deposited on silicon wafer and the assembly of these nanocrystals was studied by atomic force microscopy. It was found that the CdS/AOT formed a monolayer by simply dropping the colloid solution on silicon surface, while CdS/HMP exhibited 3D structure with prefered orientation in the similar deposition process. A dynamic electric force microscopy was performed and the polarizability was measured from the resonance of cantilever under applied alternating voltage between tip and substrate. The dielectric constant of CdS nanocrystal was estimated by comparing the different electric capacitance of Au and CdS nanocrystals.     

Surface-defect-states photoluminescence in CdS nanocrystals prepared by one-step aqueous synthesis method

CdS nanocrystals were prepared by a simple one-step aqueous synthesis method using thioglycolic acid (TGA) as the capping molecule, and characterized by X-ray powder diffraction (XRD), UV-vis absorption spectra and photoluminescence (PL) emission spectroscopy. The effects of both TGA/Cd and Cd/S molar ratio on the surface-defect-state PL intensity of CdS nanocrystals have been investigated. It was found that all of the as-prepared CdS nanocrystals showed a strong broad emission in the range of 450-700 nm centered at 560 nm, which was attributed to the recombination of an electron trapped in a sulfur vacancy with a hole in the valance band of CdS. The surface-defect-states emission intensity of CdS nanocrystals significantly increased with the increase of Cd/S molar ratio, and showed a maximum when Cd/S molar ratio was 2.0. If Cd/S molar ratio continued to increase, namely more than 2.0, the surface-defect-states emission intensity would decrease. It was found that the surface-defect-states emission intensity increased with the increase the TGA/Cd molar ratio, and showed a maximum when the TGA/Cd molar ratio was equal to 1.8, and a further increase of the TGA/Cd molar ratio would lead to the decrease of the surface-defect-states emission intensity.     

The rapid preparation of large-scale CdS opal photonic crystals and study of the optical properties

Monodispersed silica microspheres of 270 nm are synthesized by a colloidal solution method. Larger scale perfect three-dimensional photonic crystals (PCs) are rapidly prepared using the evaporation of acetone to self-assemble the microspheres on quartz substrates by vertical deposition methods. We find that the pseudo-photonic band gap (PBG) of the PC structure changes with increasing annealing temperature; it drastically shifts from 450 nm for as-grown crystals to 409 nm for annealing at 800 °C. CdS photonic crystals are formed by infiltrating CdS nanocrystals of 6 nm into the SiO₂ PC structure. The transmission and spontaneous emission characteristics of CdS PCs have been investigated. The clear dip in the spontaneous emission spectrum relates to the photonic band gap of CdS PCs, indicating that the spontaneous emission is inhibited in the region of the PBG. The emission band of CdS PCs becomes narrower and sharper than that of CdS nanocrystals; this demonstrates that the emission band and intensity of the luminescent devices will be tuned by controlling the position of the PBG. PACS 42.70.Qs; 42.25.Bs; 78.20.-e; 78.55.Et     

CdTe,核 壳型CdTe/CdS及CdTe/ZnS量子点的合成及表征

在水相中制备了半导体CdTe纳米晶,核 壳型CdTe/CdS和CdTe/ZnS纳米晶（即量子点;QDs）.利用扫描隧道显微镜（STM）和荧光光谱(FS)对合成的纳米晶量子点进行了研究,并且根据FS的数据进行了量子效率的计算.STM的结果表明合成的量子点直径约为3 nm并且分布良好.为了提高量子效率,对Cd2+浓度和Cd2+∶S2－比例等反应条件进行了研究,结果表明随着回流时间的增加,核 壳型量子点CdTe/CdS的量子效率总体上呈下降趋势.CdTe/CdS在pH8.5,Cd2+∶S2－=10∶1（摩尔比）时可获得80.0%的最大量子效率.同时制备了核 壳型量子点CdTe/ZnS,其最大发射波长由551 nm（CdTe）红移到635 nm（CdTe/ZnS）表明量子点的尺寸在增长,但是量子效率下降到14.4%. 当前研究的量子点可适用于生物标记,生物成像,以及基于共振能量转移的生物传感研究.     

A steady blue-emitting CdS nanocrystals-polystyrene composites

CdS nanocrystals with narrow size distribution were synthesized in an organic solution and transparent CdS nanocrystals/polystyrene composite films were fabricated. Transmission electron microscopy, energy dispersive X-ray spectroscopy, photoluminescence and Raman spectra were adopted to investigate these samples. The result of photoluminescence measurement shows that the composite films exhibit distinct luminescence properties of more stable emission and a narrower full-width at half-maximum than that of CdS nanocrystals in solution. Detailed analysis of the Raman spectra has enabled us to identify the origin of the optimized optoelectronic properties of the CdS nanocrystals-polystyrene composites films.     

Microemulsion-mediated synthesis of cadmium zinc sulfide nanocrystals with composition-modulated optical properties

Cadmium zinc sulfide nanocrystals were synthesized by a microemulsion-mediated process, which involving two steps: the preparation of CdS (or ZnS) seeds and the succedent hydrothermal growth of ZnS (or CdS) component. The XRD results show that the cadmium zinc sulfide nanocrystals with CdS seeds present a hexagonally homogeneous alloyed structure, while the ones with ZnS seeds mainly take on the characteristic of hexagonal CdS nanocrystals. The intrinsic factors influencing the crystal structures were discussed. The UV-vis and photoluminescence (PL) spectra indicate that the optical properties of the obtained nanocrystals with CdS seeds can be continuously modulated by tuning their compositions, although their sizes and size distributions are not under a strict control. The composition-modulated strategy, along with the hydrothermal microemulsion process, will be an effective route to achieve semiconductor nanocrystals with tunable optical properties under more manageable conditions.