Thermal conductance in a quantum waveguide modulated with quantum dots

We investigate the thermal conductance in a quantum waveguide modulated with quantum dots at low temperatures. It is found that the thermal conductance sensitively depends on the geometrical parameters of the structure and boundary conditions. When the stress-free boundary conditions are applied in the structure, the universal quantum of thermal conductance can be found regardless of the geometry details in the limit T→0. For an uniform quantum waveguide, a thermal conductance plateau can be observed at very low temperatures; while for the quantum waveguide modulated with quantum dots, the plateau disappears, instead a decrease of the thermal conductance can be observed as the temperature goes up in the low temperature region, and its magnitude can be adjusted by the radius of the quantum dot. Moreover, it is found that the quantum waveguide with two coupling quantum dots exhibits oscillatory decaying thermal conductance behavior with the distance between two quantum dots. However, when the hard-wall boundary conditions are applied, the thermal conductance displays different behaviors.     

Co-tunneling of the charge through a 2-D electron island

A double barrier Single Electron Transistor is realized in two dimensions by confining the 2-D electron gas of a GaAs/GaAlAs heterojunction to a small island by means of Schottky gates. Two gates provide adjustable tunnel barriers and a central gate controls the electron number in the island. The island has small single-particle energy level spacing and forms a metallic island. Periodic conductance oscillations characteristic of Coulomb blockade are observed when the central gate voltage is varied. The ability to vary the tunnel conductance allows us to study the basic physics of the Coulomb blockade: our results show that the quantum charge fluctuation mechanism which limits the tunneling blockade at low temperature is of second order in tunnel barrier transparencies in agreement with the charge Macroscopic Quantum Tunneling (q-MQT) or co-tunneling model.     

Spatially modulated tunnel magnetoresistance on the nanoscale

We investigate the local tunnel magnetoresistance (TMR) effect within a single Co nanoisland using spin-polarized scanning tunneling microscopy. We observe a clear spatial modulation of the TMR ratio with an amplitude of ~20% and a spacing of ~1.3 nm between maxima and minima around the Fermi level. This result can be ascribed to a spatially modulated spin polarization within the Co island due to spin-dependent quantum interference. Our combined experimental and theoretical study reveals that spin-dependent electron confinement affects all transport properties such as differential conductance, conductance, and TMR. We demonstrate that the TMR within a nanostructured magnetic tunnel junction can be controlled on a length scale of 1 nm through spin-dependent quantum interference.     

Effect of electron interaction on statistics of conductance oscillations in open quantum dots: does the dephasing time saturate?

We perform self-consistent quantum transport calculations in open quantum dots taking into account the effect of electron interaction. We demonstrate that, in the regime of the ultralow temperatures 2 pi kappa BT < or = delta (delta being the mean-level spacing), the electron interaction strongly smears the conductance oscillations and thus significantly affects their statistics. Our calculations are in good quantitative agreement with the observed ultralow temperature statistics of Huibers et al. [Phys. Rev. Lett. 81, 1917 (1998)]. Our findings question a conventional interpretation of the ultralow temperature saturation of the coherence time in open dots which is based on the noninteracting theories, where the agreement with the experiment is achieved by introducing additional phenomenological channels of dephasing.     

含半圆弧形腔的量子波导中声学声子输运和热导特性

采用散射矩阵方法,研究了在应力自由和硬壁两种典型的边界条件下含半圆弧形腔的量子波导中声学声子输运和热导性质.结果表明在两种边界条件下声子透射谱和热导有着不同的特征.在应力自由边界条件下,能观察到普适的量子化热导现象,当结构为一理想的量子线时,在低温区域有一个量子化平台出现,而当半圆弧形结构存在时,非均匀横向宽度引发的弹性散射使得量子化平台被破坏;在硬壁边界条件下,不可能观察到量子化热导现象,热导随温度的增加单调上升;计算结果表明还可以通过调节半圆弧形结构的半径来调控声子的输运概率和热导. 关键词： 声学声子输运 热导 量子体系     

Rashba effect in Ga<Subscript>x</Subscript>In<Subscript>1-x</Subscript>As/InP quantum wire structures

An overview is given on the Rashba effect in Ga_xIn_1-xAs/InP quantum wires. First, the effect of Rashba spin–orbit coupling on the energy level spectrum of quantum wires with different shapes of the confining potential is theoretically investigated. The wave functions as well as the spin densities in the quantum wire are analyzed for different magnetic fields. It is found that, owing to the additional geometrical confinement, a modification of the characteristic beating pattern in the magnetoresistance can be expected. The theoretical findings are compared to measurements on two different types of wires: First, single wires and, second, sets of parallel wires. A characteristic beating pattern in the Shubnikov–de Haas oscillations is observed for wires with an effective width down to approximately 400 nm. The beating pattern is significantly better resolved for the samples with sets of parallel wires, owing to the effective suppression of conductance fluctuations. A comparison with theoretical simulations confirms that the strength of the Rashba effect is basically not affected by the geometrical confinement of the wires. However, for wires with a very small effective width the strong carrier confinement leads to a suppression of the characteristic beating pattern in the Shubnikov–de Haas oscillations. PACS 71.70.Ej; 73.63.-b; 71.70.Di     

结构缺陷对量子波导腔中热导的调控

利用散射矩阵方法和标量模型,研究了低温下可调缺陷对量子波导腔的热导的影响. 改变缺陷的参数能控制热导,缺陷的尺寸和位置能导致热导的改变,而且不同种类的缺陷也能导致热导随温度的变化. 关键词： 声学声子输运 热导 量子结构     

Heat transport through a quantum dot with one-dimensional interacting leads under Coulomb blockade regime

The peculiarities of a low temperature heat transfer through a ballistic quantum dot (a double potential barrier) with interacting leads due to a long-range Coulomb interaction (in the geometrical capacitance approach) are considered. It is found that the thermal conductance K shows periodic peaks as a function of the electrostatic potential of a dot at low temperatures. At the peak maximum it is whereas near the minimum it is . Near the peak maximum the dependence K(T) is essentially nonmonotonic at the temperatures correspondent to the level spacing in the quantum dot. Received 20 October 1999 and Received in final form 20 January 2000     

Quantum conductance oscillations in metal/molecule/metal switches at room temperature

We apply pressure-modulated conductance microscopy to metal/molecule/metal switches. Apart from pressure-induced conductance peaks that indicate nanoscale conducting pathways, we also observe dips and oscillations for devices with conductance between 1 and 2 conductance quantum. The conductance oscillations arise from interfering electron waves along one or two quantum conductance channels between two partially transmitting electrode surfaces at room temperature, underscoring these devices' potential as coherent, atomic-scale switches.     

Shell structure of a circular quantum dot in weak magnetic fields

The conductance of a circular quantum dot in a two-dimensional electron gas of a GaAlAs/GaAs heterostructure has been measured. Conductance oscillations as functions both of the magnetic field B and of the size of a dot confining about 1000 electrons are related to the formation of electronic shell structure. Modeling the dot by a circular billiard, we interpret the results semiclassically in terms of periodic orbit theory, providing a simple explanation of the B-periodic oscillations. A comparison to a harmonic confinement suitable for smaller quantum dots is given.     

Two-dimensional electron systems in inversion layers of p-type Hg0.8Zn0.2Te metal-insulator-semiconductor structures

Strong oscillations on capacitance and conductance have been observed in p-type Hg0.8Zn0.2Te metal-insulator-semiconductor structures, made by using a recent process for the interface passivation. This behaviour is attributed to a two-dimensional electron gas in the n-inversion layer and the variation of the conductance maximums with temperature indicates that the dominant perpendicular transport mechanism for electrons is an incoherent two-step tunnelling through deep levels in the gap. Three models have been used to describe the quantum confinement: the simple variational method, the triangular potential approximation and the propagation matrix method. The later approach takes into account the non parabolicity of the conduction band structure and uses a finite height barrier at the insulator-semiconductor interface. A very good agreement between experimental and calculated values for the two lowest subband energy is obtained. Received 9 February 1999     

Conductance studies in a double-bend quantum structure

Transport phenomena in a double-bend quantum structure fabricated in the two-dimensional electron gas of a modulation doped GaAs/AlGaAs structure, are studied experimentally. The structure consists of an electrostatically defined quantum dot with two one-dimensional wires connected on opposite corners of the dot. The current–voltage characteristics of such devices exhibit quantized conductance breakdown (non-linear behavior), conductance variation with confinement, and non-linear and asymmetric behavior at high bias condition. Low temperature conductance of this structure shows evidence of resonant tunneling, while the peaks of the conductance vary with temperature.     

The distribution of equilibrium magnetization currents in systems with dimensional quantization in a finite magnetic field

The distribution of equilibrium magnetization currents in two-dimensional bounded systems placed in an external magnetic field is studied. A half-plane, a quantum disk, and a wide quantum ring are considered. The passage from classical to quantizing magnetic fields is investigated. The edge currents near the boundary of the half-plane are shown to experience damped (far from the boundaries) spatial oscillations related to the Fermi electron wavelength. The region occupied by currents was found to narrow with increasing field. Apart from these oscillations, the current contains a component that smoothly changes with distance but oscillationally depends on the position of the Fermi level relative to the Landau levels. The suppression of the oscillations by temperature is studied. The spatial distribution of the current in a circular disk and a ring is shown to significantly depend on the position of the Fermi level.     

Magnetoconductance of graphene nanoribbons

The electronic and transport properties of monolayer and AB-stacked bilayer zigzag graphene nanoribbons subject to the influences of a magnetic field are investigated theoretically. We demonstrate that the magnetic confinement and the size effect affect the electronic properties competitively. In the limit of a strong magnetic field, the magnetic length is much smaller than the ribbon width, and the bulk electrons are confined solely by the magnetic potential. Their properties are independent of the width, and the Landau levels appear. On the other hand, the size effect dominates in the case of narrow ribbons. In addition, the dispersion relations rely sensitively on the interlayer interactions. Such interactions will modify the subband curvature, create additional band-edge states, change the subband spacing or the energy gap, and separate the partial flat bands. The band structures are symmetric or asymmetric about the Fermi energy for monolayer or bilayer nanoribbons, respectively. The chemical-potential-dependent electrical and thermal conductance exhibits a stepwise increase behaviour. The competition between the magnetic confinement and the size effect will also be reflected in the transport properties. The features of the conductance are found to be strongly dependent on the field strength, number of layers, interlayer interactions, and temperature.     

Electron Transport Through Double-Dot Aharonov-Bohm Interferometer in the Kondo Regime

By applying the slave boson technique, we have studied the electron transport through double-dot Aharonov-Bohm interferometer in the Kondo regime. For the system with symmetric quantum dots, the linear conductance is shown to be enhanced by Kondo effect, but it is suppressed in the deep dot level regime in the presence of nonzero magnetic flux. The Aharonov-Bohm oscillations of the conductance are also investigated.     

Conductance oscillations and transport spectroscopy of a quantum dot

Results are reported for low temperature measurements of the conductance through small regions of a two-dimensional electron gas (2 DEG). An unconventional GaAs heterostructure is used to form a 2 DEG whose density can be tuned by the gate voltage applied to its conductive substrate. Electron beam lithography is used to pattern a narrow channel in the 2 DEG interrupted by two constrictions, defining a small 2 DEG island between them. The conductance is found to oscillate periodically with the gate voltage, namely with electron density. Calculations of the capacitance between the substrate and the island show that the period of oscillation corresponds to adding one electron to the island. The oscillatory behavior results primarily from the discreteness of charge and the Coulomb interaction between electrons. However, the observed temperature dependence of these oscillations requires a more sophisticated treatment which includes the quantized electron energy levels as well. The magnetic field dependence of the oscillations allows us to extract the discrete energy spectrum of the quantum dot in the quantum-Hall regime.     

Tunable quantum dot resonator embedded in a quantum wire

Combined quantum wire and quantum dot system is theoretically predicted to show unique conductance properties associated with Coulomb interactions. We use a split gate technique to fabricate a quantum wire containing a quantum dot with two tunable potential barriers in a two-dimensional electron gas. We observe the effects of the quantum dot cavity on the electron transport through the quantum wire, such as Coulomb oscillations near the pinch-off voltage and periodic conductance oscillations on the first conductance plateau.     

First and second sound in cylindrically trapped gases

We investigate the propagation of density and temperature waves in a cylindrically trapped gas with radial harmonic confinement. Starting from two-fluid hydrodynamic theory we derive effective 1D equations for the chemical potential and the temperature which explicitly account for the effects of viscosity and thermal conductivity. Differently from quantum fluids confined by rigid walls, the harmonic confinement allows for the propagation of both first and second sound in the long wavelength limit. We provide quantitative predictions for the two sound velocities of a superfluid Fermi gas at unitarity. For shorter wavelengths we discover a new surprising class of excitations continuously spread over a finite interval of frequencies. This results in a nondissipative damping in the response function which is analytically calculated in the limiting case of a classical ideal gas.     

Calculation of the quantum efficiency for the absorption on confinement levels in quantum dots

The quantum efficiency of the absorption on quantum confinement levels is investigated. This is achieved by modeling the electron confinement in a spherical quantum dot (QD). The confinement levels are calculated using both infinite and finite rectangular quantum wells. The spectral internal quantum efficiency is evaluated within both the models, by computing Einstein’s coefficients for the transitions between confinement levels. The size of QDs (1–3 nm radius) leads to negligible many body effects. The nature of the QD material and of the matrix embedding is taken into account in the finite rectangular quantum well approximation and introduces only a small correction. The temperature dependence of the efficiency is also taken into account. A numerical application is performed for a silicon QD of 2.5 nm radius, embedded in amorphous silica. It is proved that the absorption threshold shifts toward the far infrared limit and that the spectral internal quantum efficiency reaches 4–5% at the threshold.