High superconducting transition temperatures in the palladium-noble metal-hydrogen system

High superconducting transition temperatures, T_c, of 16.6, 15.6 and 13.6 K have been observed in Pd-(Cu, Ag and Au) alloys, charged with large amounts of H by means of ion implantation at liquid Helium-temperatures. A peculiar phase-transition indicates that weak phonon modes might be responsible for the high T_c-values. The difference between the maximum T_c-values can be described as a type of isotope effect T_c∞M ^?1/2.     

The thermal conductivity of disordered and amorphous metal films

The thermal conductivity of quenched condensed polycrystalline and amorphous Pb and Pb_0.9Cu_0.1 films has been measured between 0.5 and 11 K, i.e. in the superconducting (T7 K) and in the normal state (T7 K). Whereas, in agreement with previous results, phonon heat transport is very small for crystalline films, a considerable portion of heat is carried by phonons in amorphous films, owing to the absence of extended lattice defects. Phonon scattering in these latter films is analyzed in terms of scattering from conduction electrons aboveT _c, whereas well belowT _c it is very likely due to low energy excitations inherent in the amorphous structure.Work performed within the research program of the Sonderforschungsbereich 125 — Aachen/Jülich/Köln     

Thin film synthesis and the influence of irradiation-induced defects on the superconductivity of La1.8Sr0.2CuO4

Thin superconducting films of La_1.8Sr_0.2CuO₄ have been prepared by magnetron sputter deposition and subsequent temperature treatment. The composition of the films has been determined by Rutherford backscattering and the structure by thin film X-ray diffraction. The onset of superconductivity was about 32 K and the midpoint near 28 K. Defect production in the films by He ion bombardment revealed a drasticT _c reduction with a sensitivity similar to that observed in the Chevrel phases. Oxygen implantation and subsequent annealing led to an enhancement of theT _c onset.     

Superconducting properties and structure of ion bombarded Nb layers

The influence of ion bombardment on the superconducting transition temperature T_c and the structure of thin evaporated niobium layers has been investigated as a function of ion species and layer purity. Irradiation through pure layers with neon ions and fluences of typically 1016 ions/cm² leads to relatively small T_c decreases (δT_c × 0.5 K), while in oxygen contaminated layers larger effects depending on oxygen concentration are observed. Homogeneous implantation of chemically active impurities (nitrogen, oxygen) also drastically depresses T_c reaching the detection limit of 1.2K at a concentration of 15 at. %N. The T_c depressions correlate with a lattice parameter expansion of the Nb bcc structure at a rate of about 0.1 %per 1 at. % impurity.     

μ +SR study of some magnetic superconductors

The relaxation of the ⁺SR signal has been investigated for the three compounds YRh₄B₄, ErRh₄B₄ and SmRh₄B₄. In the non-magnetic superconducting (T _c 11 K) YRh₄B₄, the data display a Kubo-Toyabe (gaussian) shape for zero (transverse) magnetic fields. ErRh₄B₄ (superconducting below 8.7 K and ferromagnetic below 1 K) shows a dominant signal with very slow relaxation. In contrast SmRh₄B₄ (superconducting below 2.7 K and antiferromagnetic-superconducting below 0.87 K) shows a change in relaxation from gaussian above 60 K to exponential between 1 K and 4 K to two exponential signals (fast and slow) belowT _N=0.9 K. In the region 0.9 K <T < 4.5 K, the relaxation time and the asymmetry both increase withT.supported by the U.S. Department of Energy.Supported by NSERC of Canada.supported by the U.S. Department of Energy.We are grateful to Drs. H. Umezawa and H. Matsumoto for interesting discussions regarding the persistent current screening and the results of self-consistent calculations.     

Electronic phase separation in La-Cuprates

The mechanisms driving the phase separation in high-T _c La cuprates is studied by magnetic susceptibility and electrical resistivity measurements. The experiments are performed under different thermal treatment. Three temperature ranges can be resolved characteristic for different physical processes: At 150T170K a space limited diffusion of superparamagnetic clusters (single hole clusters) occurs leading to the formation of a small but rather tight percolative subphase which at highT _c values becomes superconducting. Above 180 K the cluster motion becomes unrestricted in space and a more extended subphase is built up, however, with lowerT _c values. Above 230 K oxygen diffusion starts leading to an unexpected destruction of the conducting/superconducting phase.     

Superconductivity of niobium nitride single crystals after implantation of carbon and nitrogen

Single crystals of δ-NbN_0.85 with a superconducting transition temperature T_c of 14.3 K were implanted with nitrogen and carbon ions at room temperature and subsequently annealed at high temperatures. Implantation was also performed at high substrate temperatures. After implantation at about 920°C maximum T_c-values of 16.5 and 17.8 K were obtained with N- and C-ions respectively. Disorder observed after room temperature implantation consisted of displaced Nb-atoms which could not be completely annealed in an isochromous annealing process up to 1000°C. For annealing temperatures above 1100°C nitrogen diffusion out of the implanted layers resulted in a reduction of T_c.     

The superconducting transition temperature of bulk samples of the niobium-germanium A15-phase after implantation of Ge,Si, O and Ar ions

Bulk material of Nb₃ (Ge_0.8Nb_0.2) with A15 structure and a superconducting transition temperature T_c of 6.5 K has been implanted with Ge, Si, Ar and O ions and subsequently annealed at high temperatures. After annealing between 700 and 750°C the Ge implanted samples showed a strong increase in T_c up to 16.2 K. With Si ions only a T_c of 13 K was obtained, with Ar and O ions T_c remained below 9 K. From X-ray measurements carried out on high T_c Ge implanted samples it could be concluded that the implanted surface layer grows up to a high degree epitaxially on the single crystallites of the bulk material. The lattice constant $\text{a}$₀ of the implanted film was reduced by 0.02 Å with respect to the bulk material. This reduction in $\text{a}$₀ is stronger than expected from the transition temperature of the implanted surface layer.     

Effective interactions and the nature of Cooper instability of spin polarons in the 2D Kondo lattice

It has been shown that two-and three-center interactions arise in the strong-coupling regime for the 2D Kondo lattice; these interactions both induce and suppress the Cooper instability. It is important that, in contrast to the t-J* model, the three-center interactions promote the Cooper pairing and ensure the appearance of the superconducting phase with a high critical temperature T _c. The calculated concentration dependences of T _c agree well with the experimental data for the cuprate superconductors.     

Unusual behaviour of conductivity and superconductivity in solid Sn−Xe mixtures

We have measured the normal statedc conductivity , the superconducting transition temperatureT _c and the critical superconducting currentI _c0 of frozen Sn–Xe mixtures in dependence of the Sn atomic fractionc. A new, high-T _c phase is observed forc between 0.58±0.02 and 0.74±0.02. This phase has aT _c-value of about 5.7 K, it shows a strong decrease in and inI _c0 and transforms into disordered Sn during annealing between 15 K and 50 K.It is a pleasure for us to dedicate this paper to Prof. Dr. S. Methfessel on the occasion of his 60^th birthday.This work was supported by the Deutsche Forschungs-gemeinschaft     

Specific heat of the superconducting high pressure phase Ga II

The high pressure modification gallium II, which becomes superconducting near 6.4 K, has for the first time been investigated calorimetrically at about 35 kbar in the temperature range of liquid helium. From the data a Debye temperature _D = 178K and an electronic specific-heat coefficient =1.75 mJ/mole K² are obtained. These values are in good qualitative accord with the increased superconductingT _c with respect to that of Ga I.Work supported by the Deutsche Forschungsgemeinschaft.Dedicated to Prof. Dr. W. Buckel on the occasion of his 60th birthday.     

Superconductivity above 100 K in multi-phase Y−Ba−Cu−O

We report the synthesis, characterization and superconducting temperature of high-temperature superconducting Y_0.3Ba_0.7CuO₃, Y_0.4Ba_0.6CuO₃ and Y_1.2Ba_0.8CuO₄. The volume fraction of the superconducting phase is estimated to be of the order of 10%.HighT _c superconductivity withT _c -onsets up to 125 K (midpoint 102 K, zero resistance: 90 K) is observed in multi-phase Y–Ba–Cu–O oxygen defect compounds with the nominal composition of Y_1.2Ba_0.8CuO_4–y (0y0.4).     

Magnetic susceptibility and superconductivity of (Pb<Subscript>0.2</Subscript>Sn<Subscript>0.8</Subscript>)<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>In<Subscript>x</Subscript>Te alloys as a function of in content

Experimental data on the superconductivity of In-doped Pb_zSn_1?zTe alloys (z=0.2) are discussed. The superconducting transition was detected from simultaneous measurements of the resistivity and magnetic susceptibility of a series of samples with different indium contents (2–12 mol % InTe). The superconducting transition detected by the magnetic susceptibility was observed at a temperature which was, on the average, 0.1 K below that determined from the resistivity. The increase in the superconducting transition temperature T _c with increasing indium content is of a threshold character, with T _c being proportional to the inverse electronic density of states at the Fermi level. The observed features in the experimental data are accounted for in terms of indium impurity resonance states in the material.     

Pressure effect onT c and resistivity: Localization in YBa2Cu3O x oxides

We have studied the effect of hydrostatic pressures up to 20 Kbar on the temperature dependence of the resistivity (T) and the effect of quasihydrostatic pressure up to 200 Kbar on the lattice parameters of YBa₂Cu₃O _x for different oxygen concentrations (x=6.95–6.2). Pressure produces a decrease of resistivity in normal state, an increase ofT _c , and a suppression of semiconducting-like resistivity (T) at lowx. The dependence of dT _c (x)/dP onx is nonmonotonic; the record values of dT _c /dP=(1.0±0.1) K/Kbar are observed forx=6.7 and 6.8. The derivative dln/dP atT=293 K differs by the factor 1.8 between superconducting and nonsuperconducting compounds. The compressibility and its pressure derivative alonga, b andc-directions in YBa₂Cu₃O _x have been determined. The most remarkable variation is alongc-direction. A nonmonotonic dependence of dk _c (x)/dP onx has been observed.The results are discussed in the context of localized effects in disordered oxygen-deficient YBa₂Cu₃O _x .     

Low temperature self-ion irradiation of pure and granular aluminium-films

Al-films, evaporated at room temperature under different oxygen partial pressures, were irradiated with self-ions (500 keV, Al⁺⁺) at low temperature (<7 K). The observed increase of the resistivity and of the superconducting transition temperatureT _c depends strongly on the oxygen contentc ₀ present in the layers. A qualitative different behaviour of the above quantities was found for different fluence ranges of the bombarding ions. For high fluences in all cases an oxygen stabilized disorder state was obtained with correspondingT _c-increases betweenT _c=0.2 K for the purest films (c ₀0.5 at %) andT _c =1.2 K for films with c ₀=40 at %. The annealing behaviour of the irradiated films is also dependent on the oxygen contentc ₀.     

Variation of electronic properties and evidence for a reversible defect induced metal to semiconductor transition in PbMo6S8 observed by ion irradiation and subsequent annealing of thin films

The influence of lattice disorder varied by low temperature irradiation with 20 MeV³²S-ions and subsequent isochronal thermal annealing on Hall-effectR _H (T), resistivityp(T) and superconducting critical temperatureT _c of thin films of the Chevrel-phase PbMo₆S₈ is reported. It is found that the well known, unusual sensitivity ofT _c is correlated with drastic changes of normal state transport properties e.g.R _H (T) andp(T). In the low fluence regime (6·10¹³ cm^–2,T _c 2 K) annealing leads to a monotonous restoration of the initial properties with the main recovery occurring at temperatures as low as 500 K. Contrary to this, annealing of highly disordered samples (10¹⁵ cm^–2) creates semiconductor-like conduction behavior. This manifests itself by a strong increase of the electrical resistivity with decreasing temperature which becomes more pronounced at higher annealing temperaturesT _A . AfterT _A =800 K the resistivityp(15K) is enhanced by more than a factor of 1000 withp(15K)/p(280 K)=210 compared to as irradiated. Further annealing at 900 K and 1000K results in the reappearance of metallicp(T)-behavior and superconductivity (T _c >10K). The observed effects can be understood by systematic changes of the electronic density of states consistent with an earlier proposed defect model.     

Variation of electronic density in the superconducting phase transition in Nb<Subscript>3</Subscript>Al

The variation of electronic density in the superconducting phase transition in the classical superconductor Nb₃Al with critical temperature T_c=18.6 K was studied using ⁷³Ge emission Mössbauer spectroscopy. A comparison of the results obtained and the data available for the ⁶⁷Zn isotope in the lattices of high-temperature superconductors revealed a correlation between the electronic density variation at the Mössbauer probe nuclei sites and the value of T_c. This correlation is assumed to be related to the dependence of the electronic density variation on the standard correlation length.     

Tunneling experiments on amorphous and crystalline superconducting tantalum films

The energy gap and the transition temperature of amorphous and crystalline superconducting Ta films are measured by tunneling experiments. The following values are obtained: 2(0)=0,65 meV,T _c=2,11 K for the amorphous state after quenched condensation and 2(0)=1,24 meV,T _c=4,06 K for the crystalline state after annealing at room temperature. The reduced energy gap 2(0)/kT _c=3,58 demonstrates that amorphous Ta films are weak-coupling superconductors. The crystallization of the amorphous Ta films takes place at 250 K.     

Effect of elastic strain and stress on the superconducting transition temperature of quench-condensed films

The volume dependence of the superconducting transition temperatureT _c of amorphous and highly disordered films is investigated by bending the film substrate. The volume coefficientd InT _c /d InV of annealed Sn and Pb films agrees with the volume coefficient known from hydrostatic pressure experiments. This bending technique is applied to superconducting modifications which can be produced only by quench condensation onto a substrate at liquid helium temperature. Amorphous films such as Bi, Ga, Sn₉₀Cu₁₀ and Pb_xBi_1–x, as well as highly disordered Sn and Pb films, are investigated. The relations found between the volume coefficient, the electron-phonon coupling constant and the Grüneisen parameter _G are in reasonable agreement with the volume dependence ofT _c for non-transition metals, obtained on the basis of the McMillan equation. In particular, the results represent an expansion of this kind of investigation to very strong-coupling superconductors.Dedicated to Prof. Dr. W. Buckel on the occasion of his 60th birthdayPaper based in part on a Habilitationsschrift submitted to the Fakultät für Physik, Universität Karlsruhe (TH)     

Metastable phases in YBCO films created by short-term annealings

The effect of short-term low-temperature annealing in air and in vacuum on the properties of HTSC films of YBCO is studied. It is shown that, under certain conditions of preparation of initial samples, a transition from the HTSC phase with the superconducting transition temperature T_c=90 K to a phase with T_c=60 K occurs without a noticeable change in the oxygen content. It is found that, as a result of short-term annealings, a transition from the HTSC phase with T_c=60 K to the phase with T_c=90 K can occur only through the vacuum annealing stage, which converts the sample into the superconducting state. Short-term annealings lead to multiple reversible “switching” of the films from one phase to another. The obtained results are of practical interest, since the proposed method can be used to quickly obtain superconducting YBCO films in various phase states. It is shown, in addition, that the annealing procedure makes it possible not only to increase the oxygen concentration but also to produce a structural rearrangement of a YBCO film.