InAs自组装量子点GaAs肖特基二极管中的电流输运特性

设计了含有InAs自组装量子点(SAQDs)的新型金属半导体金属隧穿结构,研究了其直流输运特性,观察到了电流迟滞回路现象.这种回路现象是由于紧邻金属肖特基接触的量子点充电和放电引起的,也可以说是由外加电压控制的量子点的单电子过程引起的.分析了量子点总体的充放电特性,量子点中电子在高电场下隧穿出量子点的概率变化决定了量子点的放电过程,而充电过程是由流过量子点层的二极管正向电流决定.理论拟合结果显示充电过程主要由于量子点基态能级俘获电子照成的,激发态对量子点充放电过程只有微弱影响. 关键词： 迟滞现象 自组装量子点 单电子过程     

含多层InAs量子点的双肖特基势垒二极管输运特性研究

研究了含多层InAs量子点结构的双肖特基势垒的电流输运特性,观察到了量子点的电子存储效应及其对电流的调制现象、电流多稳态现象和零点电压漂移现象.因为多量子点之间存在耦合作用,造成器件中的很多亚稳态.通过器件的输运特性显示出比含单层量子点器件更复杂的结果.随着外加电压的变化,器件经历很多弛豫过程.这些弛豫过程在电流电压曲线中造成很多电流跳跃结构和各种噪声结构 关键词： 多量子点 迟滞现象 单电子过程     

InAs自组装量子点GaAs肖特基二级管的电学特性研究

分析研究了GaAsInAs自组装量子点的电输运性质,通过对实验数据的分析,讨论了Schottky势垒对InAs量子点器件的影响和IV曲线中迟滞回路以及电导曲线中台阶结构产生的原因.迟滞回路和台阶的出现与电场中量子点的充放电过程相关:迟滞回路反映了量子点充电后对载流子的库仑作用,而电导台阶则反映了量子点因共振隧穿的放电现象 关键词： 迟滞现象 自组装量子点 共振隧穿     

微波调制的里德堡原子集体量子跳跃

对于一个三能级原子体系,原子的两个基态能级通过微波耦合起来,其中一个基态能级可被激发到里德堡态,从而可观察量子跳跃现象.本文采用量子轨线方法研究了微波调制的里德堡原子集体量子跳跃.研究结果表明,微波耦合基态能级可以提高光子关联,增强光子聚束效应,即使较少的原子中也可以观察到系统在高里德堡占据数态和低里德堡占据数态之间的切换.这一结果为将来进一步研究里德堡自旋晶格中的多体动力学提供了新思路.     

微波调制的里德堡原子集体量子跳跃

对于一个三能级原子体系,原子的两个基态能级通过微波耦合起来,其中一个基态能级可被激发到里德堡态,从而可观察量子跳跃现象.本文采用量子轨线方法研究了微波调制的里德堡原子集体量子跳跃.研究结果表明,微波耦合基态能级可以提高光子关联,增强光子聚束效应,即使较少的原子中也可以观察到系统在高里德堡占据数态和低里德堡占据数态之间的切换.这一结果为将来进一步研究里德堡自旋晶格中的多体动力学提供了新思路.     

InAs量子点在肖特基势垒二极管输运特性中的影响

在77到292K的范围内,系统研究了含InAs自组装量子点的金属-半导体-金属双肖特基势垒二极管的输运特性.随着温度上升,量子点的存储效应引起的电流回路逐渐减小.在测试温度范围内,通过量子点的共振隧穿过程在电流电压(I-V)曲线中造成台阶结构,且使电流回路随温度的上升急剧减小.根据肖特基势垒的反向I-V曲线,计算了势垒的反向饱和电流密度和平均理想因子.发现共振随穿效应使肖特基势垒在更大的程度上偏离了理想情况,而量子点的电子存储效应主要改变了肖特基势垒的有效势垒高度,从而影响了势垒的反向饱和电流密度 关键词： 自组装量子点 肖特基势垒 电流-电压特性     

关于单模最小关联混态的量子隐性传态及其保真度的研究

基于Braunstein和Kimble方案以双模压缩真空态作为量子信道实施对单模最小关联混态量子隐性传态的可行性进行了研究.我们发现,单模最小关联混态在一定参数范围内呈现出压缩效应这种非经典性质,利用双模压缩真空态作为量子通道可以高保真的传递没有压缩效应的单模最小关联混态,但对呈现压缩效应的单模最小关联混态进行量子隐性传送时得到输出态的保真度较低.而且发现通过调节输出端位移因子的方法不能实现对单模最小关联混态保真度的优化.     

基于ZnS量子点与聚合物混合层的有机双稳态器件的记忆特性及其载流子传输机制

用ZnS量子点与poly-4-vinyl-phenol (PVP)复合,通过简单的旋涂法制备了结构为ITO/ZnS:PVP/Al的一次写入多次读取(WORM)的有机双稳态器件。器件起始状态为OFF态,通过正向电压的作用,器件由OFF态转变为ON态,并且在正向或反向电压的作用下,器件始终保持在ON态,表现出良好的一次写入多次读取的存储特性。与不含ZnS量子点的器件相比,含有ZnS量子点的器件表现出明显的双稳态特性,其电流开关比达到10⁴,这说明ZnS量子点在器件中起到存储介质的作用。通过对器件电流-电压(I-V)特性的测试,详细讨论了器件的双稳态特性以及载流子传输机制,并且用不同的传导理论模型分析了器件在ON态和OFF态的电流传导机制。器件I-t曲线表明器件在大气环境中具有良好的永久保持特性。     

倒置器件结构及局域等离子体效应对CdSe量子点LED发光性能的改进

研究了倒置器件结构以及CdSe量子点发光材料与金属纳米粒子之间的相互作用对量子点的电致发光性能的影响。利用TiO₂作为电子传输/注入层,成功地制备了倒置结构的量子点电致发光器件。通过对单载流子器件电压-电流特性的分析,证明了ITO作为阴极到TiO₂的电子注入特性与Al作为阴极时的效果几乎相同。观察到金属纳米粒子产生的局域等离子体效应提高了器件的效率,使得效率随电流增大而降低的速度明显减小。在电流密度为200 mA/cm²时,电致发光器件的效率大约提高了42%。     

单量子点的发光与应用EI北大核心CSCD

由于量子限制效应,自组装半导体单量子点具有类似于原子的分立能级,可实现高不可分辨、高亮度和高纯度的单光子发射,其多种激子态能够产生不同偏振模式的光子。而光学微纳结构是调控量子点发光性质的有效手段,当单个量子点与光学微腔发生弱耦合时,Purcell效应将大大提高量子点作为单光子源或纠缠光子对源的性能。同时,量子点与光学微腔的强耦合系统可以作为量子光学网络中的量子节点,以及用于研究单光子水平的光学非线性效应。利用量子点与光学波导的耦合可实现固态量子比特和飞行光子比特的相干转换,以及高效的信息处理与传输,由此构建可靠的片上光学网络。此外,单量子点还具有可操控的自旋态,可作为量子比特的载体。考虑到量子点器件的制备过程易与成熟的半导体技术相结合,基于量子点的器件设计具有良好的可扩展性和集成化潜力。     

Hysteresis in current transport in a GaAs diode containing self-assembled InAs quantum dots

We have observed hysteresis loops in current transport in a GaAs metal–semiconductor–metal diode containing InAs quantum dots. The dots in our structure are directly embedded under the GaAs–metal interface. The charging and discharging of electrons in the dots modulate the current and produce hysteresis. These processes are controlled by the applied voltages. The dots are charged by forward current flowing through the structure. The discharging of the electrons is dominated by the tunneling process under high reverse bias. The modulated currents are well fitted with an electron-trapping model considering both the ground states and the excited states of the quantum dots. Received: 5 October 2000 / Accepted: 12 December 2000 / Published online: 23 May 2001     

Pairing of spin excitations in lateral quantum dots

We demonstrate the existence of correlated electronic states as paired spin excitations of lateral quantum dots in the integer quantum Hall regime. Starting from the spin-singlet filling-factor nu=2 droplet, by increasing the magnetic field we force the electrons to flip spins and increase the spin polarization. We identify the second spin-flip process as one accompanied by correlated, spin depolarized phases, interpreted as pairs of spin excitons. The correlated states are identified experimentally in few-electron lateral quantum dots using high source-drain voltage spectroscopy.     

Probing collective modes of correlated states of few electrons in semiconductor quantum dots

Low-lying collective excitations above highly correlated ground states of few interacting electrons confined in GaAs semiconductor quantum dots are probed by resonant inelastic light scattering. We highlight that separate studies of the changes in the spin and charge degrees of freedom offer unique access to the fundamental interactions. The case of quantum dots with four electrons is found to be determined by a competition between triplet and singlet ground states that is uncovered in the rich light scattering spectra of spin excitations. These light scattering results are described within a configuration-interaction framework that captures the role of electron correlation with quantitative accuracy. Recent light scattering results that reveal the impact of anisotropic confining potentials in laterally coupled quantum dots are also reviewed. In these studies, inelastic light scattering methods emerge as powerful probes of collective phenomena and spin configurations in quantum dots with few electrons.     

Correlated electrons in coupled quantum dots and related phenomena

Three topics related to correlated electrons in coupled quantum dots are discussed. The first is quasi-resonance between multi-electron states, which causes hitherto unremarked types of resonant absorption in coupled quantum dots. The second is electron tunneling through a Hubbard gap, which is induced by an increase in the density of electrons in a quantum-dot chain under an overall confining potential. The third is Mott transition in a two-dimensional quantum-dot array induced by an external electric field. In this system, the metal-insulator transition goes through a heavy electron phase in which the density of correlated electrons fluctuates.     

Transport properties of quantum dots

Linear and nonlinear transport through a quantum dot that is weakly coupled to ideal quantum leads is investigated in the parameter regime where charging and geometrical quantization effects coexist. The exact eigenstates and spins of a finite number of correlated electrons confined within the dot are combined with a rate equation. The current is calculated in the regime of sequential tunneling. The analytic solution for an Anderson impurity is given. The phenomenological charging model is compared with the quantum mechanical model for interacting electrons. The current-voltage characteristics show Coulomb blockade. The excited states lead to additional fine-structure in the current voltage characteristics. Asymmetry in the coupling between the quantum dot and the leads causes asymmetry in the conductance peaks which is reversed with the bias voltage. The spin selection rules can cause a ‘spin blockade’ which decreases the current when certain excited states become involved in the transport. In two-dimensional dots, peaks in the linear conductance can be suppressed at low temperatures, when the total spins of the corresponding ground states differ by more than 1/2. In a magnetic field, an electron number parity effect due to the different spins of the many-electron ground states is predicted in addition to the vanishing of the spin blockade effect. All of the predicted features are consistent with recent experiments.     

Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state

Density of states is studied by a ballistic electron emission microscopy/spectroscopy on self-assembled InAs quantum dots embedded in GaAs/AlGaAs heterostructure prepared by metal–organic vapor phase epitaxy. An example of integral quantum dot density of states which is proportional to superposition of a derivative of ballistic current–voltage characteristics measured at every pixel (1.05 nm×1.05 nm) of quantum dot is presented. For the two lowest observed energy levels of quantum dot (the maxima in density of states) the density of states is mapped and correlated with the shape of quantum dot. It was found that prepared quantum dots have a few peaks on their flatter top and a split of the lowest energy level can be observed. This effect can be explained by inhomogeneous (nonuniform) stress distribution in the examined quantum dot.     

Hidden symmetry and correlated states of electrons and holes in quantum dots

We describe hidden symmetry and its application to the construction of exact correlated states of electrons and holes in quantum dots. The hidden symmetry is related to degenerate single particle energy shells and symmetric interactions. Both can be engineered in a quantum dot. We focus on hidden symmetry involving spin singlet pairing of electrons and spin singlet pairing of holes. Detailed calculations for a third shell are presented to illustrate the mechanism of pairing.     

Nonstationary effects in the system of coupled quantum dots influenced by Coulomb correlations

We investigate the time evolution of filling numbers of localized electrons in the system of two coupled single-level quantum dots (QDs) connected with the continuous-spectrum states in the presence of Coulomb interaction. We consider correlation functions of all orders for electrons in the QDs by decoupling higher-order correlations between localized and band electrons in the reservoir. We analyze different initial charge configurations and consider Coulomb correlations between localized electrons both within the dots and between the different dots. We reveal the presence of a dynamical charge trapping effect in the first QD in the situation where both dots are occupied at the initial instant. We also find an analytic solution for the time-dependent filling numbers of the localized electrons for a particular configuration of the dots.