B12-nAlnN12 (n=0, 6, 12) 的稳定性和电子结构研究

通过Al取代B在B12N12中掺杂,基于密度泛函理论对B6Al6N12的稳定性进行了系统研究．表明在B6Al6N12中,Al和B倾向于相对分开．在最稳定结构中,B原子和Al原子分别处在笼的两半．我们还分析了B12-nAlnN12 (n=0, 6, 12)的电子结构,B12N12的能隙为6.84eV,掺Al后其能隙明显变窄,Al12N12和B6Al6N12的能隙分别为3.91eV和4.08eV．NBO分析表明,B12N12中B/N原子的电荷分别为±1.17,Al12N12中Al/N 原子的电荷分别为±1.85．在B6Al6N12中,B/Al原子上的电荷分别为1.06~1.12和1.86~1.91,N原子上的电荷为-1.18~-1.83．     

B12-nAlnN12 (n=0, 6, 12) 的稳定性和电子结构研究

通过Al取代B在B12N12中掺杂,基于密度泛函理论对B6Al6N12的稳定性进行了系统研究．表明在B6Al6N12中,Al和B倾向于相对分开．在最稳定结构中,B原子和Al原子分别处在笼的两半．我们还分析了B12-nAlnN12 (n=0, 6, 12)的电子结构,B12N12的能隙为6.84eV,掺Al后其能隙明显变窄,Al12N12和B6Al6N12的能隙分别为3.91eV和4.08eV．NBO分析表明,B12N12中B/N原子的电荷分别为±1.17,Al12N12中Al/N 原子的电荷分别为±1.85．在B6Al6N12中,B/Al原子上的电荷分别为1.06~1.12和1.86~1.91,N原子上的电荷为-1.18~-1.83．     

YnN(n=2-12)团簇的结构与性质研究

在密度泛函理论框架下,用广义梯度近似（GGA）的方法研究YnN（n=2-12）团簇的电子结构,系统计算了它们的基态束缚能Be（eV）、最高占据轨道（HOMO）与最低未占据轨道（LUMO）之间的能隙、二阶能量差分 (au)、离解能 (au)、团簇的总磁矩Mt（ ）,最近邻N原子的Y原子所带的局域电荷QY（C）和磁矩MY（ ）、掺杂原子N所带的局域电荷QN（C）和磁矩MN（ ）。研究表明,Y6N、Y8N、Y10N的基态具有较高稳定性;对于YnN（n=2-12）的所有团簇,电荷总是由Y原子转移到N原子,YnN（n=2-12）团簇中Y—N表现为离子键的性质;当n=3,4,5,9,10,11,12时,团簇的磁矩为零,团簇的磁性消失,当n=2,6,7,8时,团簇具有磁性,其中n=6时,团簇的磁性最强。     

YnN(n=2-12)团簇的结构与性质研究

在密度泛函理论框架下，用广义梯度近似（GGA）的方法研究YnN（n=2-12）团簇的电子结构，系统计算了它们的基态束缚能Be（eV）、最高占据轨道（HOMO）与最低未占据轨道（LUMO）之间的能隙、二阶能量差分 (au)、离解能 (au)、团簇的总磁矩Mt（ ），最近邻N原子的Y原子所带的局域电荷QY（C）和磁矩MY（ ）、掺杂原子N所带的局域电荷QN（C）和磁矩MN（ ）。研究表明，Y6N、Y8N、Y10N的基态具有较高稳定性；对于YnN（n=2-12）的所有团簇，电荷总是由Y原子转移到N原子，YnN（n=2-12）团簇中Y—N表现为离子键的性质；当n=3，4，5，9，10，11，12时，团簇的磁矩为零，团簇的磁性消失，当n=2，6，7，8时，团簇具有磁性，其中n=6时，团簇的磁性最强。     

应变和C掺杂对单层BN纳米片的电子结构和磁学性质的影响

利用基于密度泛函理论的第一性原理计算方法, 研究了应变和C原子掺杂对单层BN纳米片的电子结构和磁学性质的影响. 计算结果表明未掺杂的单层BN纳米片具有宽的直接带隙, 在压缩和拉伸应变的作用下, 带隙会分别增大和减小, 但应变对带隙的调制整体效果不太明显. 单个C原子掺入BN纳米片的态密度揭示体系呈现出半金属性(Half-metallicity), 磁矩主要源于C 2p态, 而B 2p和N 2p态在极化作用下也能提供部分磁矩. 两个C原子掺入BN纳米片时, 磁性基态会随着C原子的间距发生变化: 当两C原子为最近邻(nn)和次近邻(nnn)时, 反铁磁态为磁性基态; 而当两C原子为次次近邻(nnnn)时, 铁磁态为基态, 并且其态密度也显示出半金属性.     

NiMgn(n=1-12)团簇的第一性原理研究

采用基于密度泛函理论(DFT)中的广义梯度近似(GGA),在考虑自旋多重度的情况下,对NiMgn(n=1-12)团簇进行了构型优化,频率分析和电子性质计算.结果表明:n=1,2时,体系的基态为自旋三重态,n≥3时.为单重态;Ni原子掺杂使主团簇结构发生了明显变化.n≤8时,三角双锥,四角双锥结构主导着NiMgn基态团簇的生长行为;n在9-12之间时,主团簇Mgn 1(n=1-12)的基于三棱柱构型的基态演化行为发生了一定程度的改变;n≥6时,Ni原子陷入了主团簇内部;掺杂使体系的平均结介能增大,能隙减小;n=4,6,10是团簇的幻数;不同尺寸团簇的s,p,d轨道杂化中,Ni原子3d,4p成分所起作用不同;NiMg6基态结构具有很高的对称性(Oh),很好的稳定性和化学活性,能隙仪为0.25 eV.     

纳米晶硅的掺杂及表面改性研究(英文)

采用基于密度泛函理论的第一性原理方法(DMOL3程序),在广义梯度近似(GGA)下,计算了硅纳米晶(Si75H76)在B和P掺杂和乙基(—CH2CH3)、异丙基(—CH(CH3)2)表面改性等情形下态密度、结合能及能隙的变化。结果表明:掺杂对体系的禁带宽度(约3.12eV)几乎没有影响,但会引入带隙态;三配位的B掺杂,在禁带中靠近导带约0.8eV位置引入带隙态,三配位的P掺杂在禁带中靠近价带0.2eV位置引入带隙态;四配位的B掺杂,在禁带中靠近价带约0.4eV位置引入带隙态,四配位的P掺杂在禁带中靠近导带约1.1eV位置引入带隙态;且同等掺杂四配位时体系能量要低于三配位;适当的乙基或异丙基表面覆盖可以降低体系的总能量,且表面覆盖程度越高体系能量越低,但在表面嫁接有机基团过多将导致过高位阻,计算时系统不能收敛。     

Cr掺杂ZnS纳米管结构和磁性质

采用第一性原理密度泛函理论系统研究Cr原子单掺杂和双掺杂单壁ZnS纳米管的结构和磁性质.研究发现掺杂纳米管的形成能比纯纳米管的形成能低,说明掺杂过程是放热的.单掺杂纳米管的总磁矩主要来自Cr原子3d态的贡献.结果表明Cr原子掺杂单壁ZnS纳米管趋向于铁磁态.但铁磁态和反铁磁态的能量差仅为0036eV.为获得室温铁磁性,我们用一个C原子替代掺杂体系中的一个S原子.计算发现铁磁态的能量比反铁磁态低0497eV.表明此掺杂体系可能获得室温铁磁性.     

PbnSn(n=1～19)合金团簇的结构稳定性及其半导体-金属性转变

基于密度泛函理论(DFT),采用广义梯度近似(GGA)计算了PbxSn(n=1～19)合金团簇的结构演化、结合能和电子结构.结果表明Sn原子的掺杂增强了Pbn团簇的稳定性,其碎裂行为也很好地符合了已有的实验结果.随着PbnSn合金团簇尺寸的增加,其几何结构由类似于密堆积构型向松散构型演化,具体的转变尺寸为总原子数N=14.PbnSn团簇的HOMO-LUMO能隙呈现出先增加后降低的趋势,在6原子时达到最大值1.6 eV,表现出显著的半导体性质和尺寸依赖.当N≥7时,能隙振荡减小,呈现出微弱的半导体性向金属性的转变行为.     

Ge(SiO2)n团簇结构和电子性质的密度泛函理论研究

采用密度泛函理论中的广义梯度近似(GGA)对Ge(SiO2)n (n = 1—7)团簇的几何构型进行优化,并对能量、频率和电子性质进行了计算。 结果表明,Ge(SiO2)n的最低能量结构是在(SiO2)n端位O原子以及近邻端位O原子的Si原子上吸附一个Ge原子优化得到;随着锗原子数的增加,增加的锗原子易与原来的锗原子形成锗团簇。掺杂锗原子后团簇的能隙比(SiO2)n团簇的能隙小,当多个Ge原子掺杂到(SiO2)3团簇时,其能隙随着Ge原子个数的增加出现了振荡,Gem(SiO2)3的能隙从可见光区到近红外光区变化。二阶能量差分、分裂能表明Ge(SiO2)2和Ge(SiO2)5团簇是稳定的。     

Geometric structure and electronic properties of planar and nanotubular BN structures of the Haeckelite type

Planar and nanotubular structures that are based on boron and nitrogen and consist of tetragons, hexagons, and octagons are considered. By analogy with carbon nanoobjects of the same topology, these structures are referred to as Haeckelites. The geometric, electronic, and energy properties are thoroughly investigated for two variants of the regular mutual arrangement of the polygons. It is established that planar and nanotubular BN structures of the Haeckelite type are dielectrics with a band gap E _g ∼ 3.2–4.2 eV, which is less than the band gap E _g for BN nanotubes consisting only of hexagons. The cohesive energy of the BN nanotubes under investigation exceeds the cohesive energy of BN hexagonal nanotubes by 0.3 eV/atom.     

Electronic structure of collapsed C,BN, and BC3 nanotubes

The electrical properties of single-wall C, BN, and BC₃ nanotubes in ideally rolled-up forms show a wide spectrum from truly metals to large band gap semiconductors. In the presence of radial deformations that collapse tubes, the electrical properties are severely modified such that metals turn into semiconductors and vice versa. Based on first-principles pseudopotential calculations, we find that metallic C nanotubes have a finite band gap if radial deformations break all mirror symmetries of the tubes, and that original finite gaps (∼0.5 eV) of semiconducting C and BC₃ tubes are closed by collapsing deformations. In BN tubes, band gaps can be tuned in the range 2–5 eV. On the other hand, the band gaps of armchair BN and zigzag BC₃ nanotubes are found to be insensitive to radial deformations. These new findings can be applied to design new types of nanotube-based functional devices using radial deformations.     

超长(n,n)型碳纳米管的密度泛函理论研究

用密度泛函B3LYP/3-21G(d)方法,并利用周期边界条件,研究了n=2—20不同管径的超长(n, n)型单壁碳纳米管的结构、能量、能带结构和能隙.结果表明,管径和能量(或生成焓)都随n有很好的变化规律,并可拟合成很好的解析函数.当n为2和3时,碳纳米管的能隙分别为1.836eV和0.228eV,呈半导体特征,且具有间接带隙;当n=4—20时,能隙介于0.027 eV和0.079 eV之间,呈较强的金属性,且具有直接带 关键词： 扶手椅型碳纳米管 周期边界条件(PBC) 超长模型 能带     

Electronic structure of BN nanotubes with intrinsic defects NB and BN and isoelectronic substitutional impurities PN, AsN, SbN, InB, GaB, and AlB

The effect of intrinsic defects and isoelectronic substitutional impurities on the electronic structure of boron-nitride (BN) nanotubes is investigated using a linearized augmented cylindrical wave method and the local density functional and muffin-tin approximations for the electron potential. In this method, the electronic spectrum of a system is governed by a free movement of electrons in the interatomic space between cylindrical barriers and by a scattering of electrons from the atomic centers. Nanotubes with extended defects of substitution N_B of a boron atom by a nitrogen atom and, vice versa, nitrogen by boron B_N with one defect per one, two, and three unit cells are considered. It is shown that the presence of such defects significantly affects the band structure of the BN nanotubes. A defect band π(B, N) is formed in the optical gap, which reduces the width of the gap. The presence of impurities also affects the valence band: the widths of s, sp, and p_π bands change and the gap between s and sp bands is partially filled. A partial substitution of the N by P atoms leads to a decrease in the energy gap, to a separation of the Ds(P) band from the high-energy region of the s(B, N) band, as well as to the formation of the impurity Dπ(P) and Dπ*(P) bands, which form the valence-band top and conduction-band bottom in the doped system. The influence of partial substitution of N atoms by the As atom on the electronic structure of BN nanotubes is qualitatively similar to the case of phosphorus, but the optical gap becomes smaller. The optical gap of the BN tubule is virtually closed due to the effect of one Sb atom impurity per translational unit cell, in contrast to the weak indium-induced perturbation of the band structure of the BN nanotube. Introduction of the one In, Ga or Al atom per three unit cells of the (5, 5) BN nanotube results in 0.6 eV increase of the optical gap. The above effects can be detected by optical and photoelectron spectroscopy methods, as well as by measuring electrical properties of the pure and doped BN nanotubes. They can be used to design electronic devices based on BN nanotubes.     

N-doping and coalescence of carbon nanotubes: synthesis and electronic properties

Self-assembly pyrolytic routes to large arrays (<2.5 cm²) of aligned CN_x nanotubes (15–80 nm OD and <100 μm in length) are presented. The method involves the thermolysis of ferrocene/melamine mixtures (5:95) at 900–1000 °C in the presence of Ar. Electron energy loss spectroscopy (EELS) reveals that the N content varies from 2–10%, and can be bonded to C in two different fashions (double-bonded and triple-bonded nitrogen). The electronic densities of states (DOS) of these CN_x nanotubes, using scanning tunneling spectroscopy (STS), are presented. The doped nanotubes exhibit strong features in the conduction band close to the Fermi level (0.18 eV). Using tight-binding and ab initio calculations, we confirm that pyridine-like (double-bonded) N is responsible for introducing donor states close to the Fermi Level. These electron-rich structures are the first example of n-type nanotubes. Finally, it will be shown that moderate electron irradiation at 700–800 °C is capable of coalescing single-walled nanotubes (SWNTs). The process has also been studied using tight-binding molecular dynamics (TBMD). Vacancies induce the coalescence via a zipper-like mechanism, which has also been observed experimentally. These vacancies trigger the organization of atoms on the tube lattices within adjacent tubes. These results pave the way to the fabrication of nanotube heterojunctions, robust composites, contacts, nanocircuits and strong 3D composites using N-doped tubes as well as SWNTs. Received: 10 October 2001 / Accepted: 3 December 2001 / Published online: 4 March 2002     

On the existence and stability of double-walled armchair silicon carbide nanotubes

A systematic study of type 1 armchair double-walled SiC nanotubes (DWNTs) (n,n)@(m,m) (3≤n≤6;7≤m≤12) using the finite cluster approximation is presented. The geometries of the tubes have been spin optimized using the hybrid functional B3LYP (Becke’s three-parameter exchange functional and the Lee-Yang-Parr correlation functional) and the all-electron 3-21G* basis set. The study indicates that the stabilities of the double-walled SiC nanotubes are of the same order as those of single-walled SiC nanotubes suggesting the possibilities of experimental synthesis of both single-walled and double-walled SiC nanotubes. The binding energy per atom or the cohesive energy of the double-walled nanotubes depends not only on the number of atoms but also on the coupling of the constituent single-walled nanotubes. The formation energy of the DWNTs is found to be maximum when the interlayer separation is about 3.5 Å. The DWNTs (n,n)@(n+4,n+4) are found to have large formation energies. In particular, (5,5)@(9,9) DWNT is the most stable tube in our study with a binding energy per atom of 5.07 eV, the largest formation energy of 12.39 eV, an interlayer separation of 3.58 Å and a “band gap” of 1.97 eV. All double-walled SiC nanotubes are found to be semiconductors, with the band gaps decreasing from single-walled nanotubes to double-walled nanotubes.     

Boron/nitrogen pairs Co-doping in metallic carbon nanotubes: a first-principle study

By using the first-principles calculations,the electronic structure and quantum transport properties of metallic carbon nanotubes with B/N pairs co-doping have been investigated.It is shown that the total energies of metallic carbon nanotubes are sensitive to the doping sites of the B/N pairs.The energy gaps of the doped metallic carbon nanotubes decrease with decreasing the concentration of the B/N pair not only along the tube axis but also around the tube.Moreover,the I-V characteristics and transmissions of the doped tubes are studied.Our results reveal that the conducting ability of the doped tube decreases with increasing the concentrations of the B/N pairs due to symmetry breaking of the system.This fact opens a new way to modulate band structures of metallic carbon nanotubes by doping B/N pair with suitable concentration and the novel characteristics are potentially useful in future applications.     

Influence of isoelectronic impurities on the electronic structure of BN nanotubes

Via the example of a (5, 5) boron-nitrogen armchair nanotube, the influence of isoelectronic substitutional impurities on the electronic structure of BN nanotubes has been investigated with the use of linear augmented cylindrical waves. The treatment is based on the local density approximation and the muffin-tin approximation for the electron potential. In this method, the electronic spectrum of a system is governed by the free motion of electrons in the interatomic space between cylindrical barriers and the electron scattering on atomic centers. It has been found that the substitution of one atom of N by P leads to the splitting of all twofold degenerate bands by 0.2 eV on average, a decrease in the energy gap from 3.5 to 2.8 eV, the separation of the s(P) band from the high-energy region of the s(B, N) band, as well as to the formation of the impurity π(P) and π*(P) bands, which form the valence-band top and conduction-band bottom in the doped system. The influence of an As atom on the electronic structure of (5, 5) BN nanotubes is qualitatively similar to the case of phosphorus, but the energy gap is smaller by 0.5 eV. The optical gap in the nanotubes is closed due to the effect of the Sb atom impurity. A substitution of one B atom by an Al atom results in the strong perturbation of the band structure and the energy gap in this case is only 1.6 eV in contrast to the weak indium-induced perturbation of the band structure of the BN nanotube. In the latter case, the energy gap is 2.9 eV. The above effects can be detected by the optical and photoelectron spectroscopy methods, as well as by measuring the electrical properties of the nanotubes. They can be used to create electronic devices based on boron-nitrogen nanotubes.     

Electronic structures of deformed B2C nanotubes under tensile strain

The vibrational properties and the band gaps of new B₂C nanotubes have been studied by the first principles calculations. It is found that (1) there is a typical Raman-active radial-breathing vibrational mode (RBM), which is similar to that of carbon nanotubes. The RBM frequency decreases in a linear proportion to the inverse diameter, whose variation slope depends on the types of B₂C nanotubes. (2) Under an applied tensile strain, the band gap of B₂C tubes is found to change greatly. For example, their band gaps can decrease to zero with increasing tensile strain for the (n, 0) B₂C tubes with odd n, showing clearly a metal–insulator transition, which cannot happen for the (n, 0) B₂C tubes with even n and the (0, n) B₂C tubes.     

Structural and electronic properties of composite BxCyNz nanotubes and heterojunctions

x C_yN_z nanotubes and related heterojunctions have been studied using both ab initio and semi-empirical approaches. Pure BN nanotubes present a very stable quasiparticle band gap around 5.5–6.0 eV independent of the tube radius and helicity. The bottom of the conduction bands is controlled by a nearly-free-electronn state localized inside the nanotube, suggesting interesting properties under doping. In the case of nanotubes with BC₂N stoichiometry, we show that in the thermodynamic limit the system is driven towards segregation of pure C and BN sections. This demixing significantly affects the electronic properties of such materials. The same process of segregation into BC₃ islands is evidenced in the case of B-doped carbon nanotubes. These spontaneous segregation processes lead to the formation of quantum dots or nanotube heterojunctions. In particular, C/BN superlattices or isolated junctions have been investigated as specific examples of the wide variety of electronic devices that can be realized using such nanotubes. Received: 27 November 1998 / Accepted: 14 December 1998