基于静态电滞回线的铁电电容模型

根据铁电体的特征电滞回线和微观结构特点，将构成铁电体的晶胞等效为偶极子. 通过分析偶极子在电场作用下的极化反转机理，运用统计物理学基本原理建立了新的铁电电容模型. 该模型不仅适用于饱和极化的情况，对非饱和、电滞回线不对称以及输入电压中途转向等各种情况也都适用. 模型数学表达简洁，易于结合到实际的电路仿真软件中去，仿真结果与试验结果符合非常好. 关键词： 铁电电容 建模 电滞回线 偶极子     

PbLa(Zr,Sn,Ti)O_3反铁电陶瓷在脉冲电场下的极化与相变行为

在实际应用中,反铁电陶瓷常处于快速变化的脉冲电场下,而传统电滞回线测量时所施加的电场变化速率较慢,并不能真实反映反铁电陶瓷实际应用时的极化和相变行为.本研究建立了反铁电陶瓷脉冲电滞回线测试平台,研究了Pb_(0.94)La_(0.04)[(Zr_(0.52)Sn_(0.48))_(0.84)Ti_(0.16)]O_3反铁电陶瓷在微秒级脉冲电场下的极化和相变行为.研究结果表明,反铁电陶瓷在微秒级脉冲电场下可以发生相变,但其极化强度降低,正向相变电场变高,反向相变电场变低,从而导致其储能特性发生了显著的变化.因此,低频电滞回线并不能真实反映反铁电陶瓷在脉冲电场下的性能,脉冲电滞回线对其应用具有更重要的参考价值.     

Si掺杂HfO_2薄膜的铁电和反铁电性质

通过改变Si掺杂量制备出了具有显著铁电和反铁电特征的HfO2纳米薄膜,对其电滞回线、电容-电压和漏电流-电压特性以及物相温度稳定性进行了对比研究.反铁电薄膜的介电系数大于铁电薄膜,在电场加载和减载过程中发生的可逆反铁电-铁电相变导致了双电滞回线的出现,在室温至185℃的测试温度范围内未出现反铁电→顺电相变.在电流-电压特性测量时观察到的负微分电阻效应归因于极化弛豫等慢响应机理的贡献.     

铌锰锆钛酸铅铁电陶瓷电滞回线的温度和频率响应

研究了Pb［(Zr052Ti048)095(Mn1/3Nb2/3)005］O3 (PMnN_PZT) 铁电陶瓷电滞回线的温度和频率响应,结果显示在高频和室温条件下测试铁电特性时,电滞回线呈现“束腰”形状,而不是通常所看到的方形回线 . 在低频和高温条件下测试时才能观察到正常的方形回线,同时,诸如矫顽场、极化强度、 内偏场这些重要的铁电参数也会随频率和温度发生显著的变化. 剩余极化强度随频率和温度 的大幅增长表明“束腰” 电滞回线有可能是由于缺陷偶极子引起的. 电滞回线形状与温度 和频率存在较强的相关性说明缺陷偶极子存在一特征弛豫时间,缺陷偶极子反转响应速度由 此弛豫时间决定. 关键词： 电滞回线 氧空位 频率响应 温度响应     

Tb0.3Dy0.7Fe2合金磁畴偏转的滞回特性研究

研究了不同载荷作用下Tb_0.3Dy_0.7Fe₂合金在压磁和磁弹性效应中磁畴偏转的滞回特性. 基于Stoner-Wolhfarth模型的能量极小原理, 采用绘制自由能-磁畴偏转角度关系曲线的求解方法, 研究了压磁和磁弹性效应中载荷作用下的磁畴角度偏转和磁化过程, 计算分析了不同载荷作用下磁畴偏转的滞回特性. 研究表明, 压磁和磁弹性效应中磁畴偏转均存在明显的滞回、跃迁效应, 其中磁化强度的滞回效应来源于磁畴偏转的角度跃迁; 压磁效应中预加磁场的施加将增大磁化强度的滞回, 同时使滞回曲线向大压应力方向偏移; 磁弹性效应中磁畴偏转的滞回存在两个临界磁场强度, 不同磁场强度下合金具有不同的磁畴偏转路径和磁化滞回曲线, 临界磁场强度的大小取决于预压应力的施加. 理论分析对类磁致伸缩材料磁畴偏转模型的完善和材料器件的设计应用非常有意义.     

无铅陶瓷中的电致伸缩效应

电致伸缩是一个二次方效应,应变正比于极化强度的平方,比例系数称为电致伸缩系数[Qij].一般固体电介质都能产生电致伸缩效应.对立方晶系的材料来说,电致伸缩系数张量为 当外加电场沿方向1时,E2=E3=0,纵向应变为通过测量材料的应变与外加电压的关系Xi～Vi,和极化强度与外电场的关系P1～Ei,就可以求得电致伸缩系数 电致伸缩效应在天文学、光学通信、激光调制等方面有着广泛的应用.与压电效应相比,它具有重复性好,不需极化,无老化问题等优点.电致伸缩是一个二次方效应,一般较小,不易观察到.已经发现,在具有扩散相转变特征的铁电固溶体中,当…     

电致伸缩效应及其应用

一、电致伸缩效应 电致伸缩(electrostriction)效应是一种机电耦合效应.它是指当外电场作用于电介质上时,所产生的应变正比于电场强度(或极化强度)的平方的现象.由于电致伸缩效应引起的应变与外加电场的方向无关,所以一般固体电介质都能产生电致伸缩效应. 由热力学唯象理论可知,对于晶格点群属于具有对称中心的材料,其应变x与极化强度P的关系为(无外应力时)即应变与极化强度的平方成正比.将x的两个脚标按惯例简化成一个,(1)式改写成 再规定 其中μ=4,5,6,分别对应于k,l的组合为23,13,12.这样,电致伸缩系数山山本来是sl个分量的四阶张量,简…     

铁电体中偶极子的滞后对剩余极化的影响

铁电体的剩余极化强度随温度降低而下降的特性引起了人们对铁电体存储数据失效的担心.运用铁电体的唯象理论和偶极子对交变电场的响应,提出了在电滞回线测量中偶极子的滞后冷冻效应模型,对极化的低温退化现象做了合理解释:温度下降导致吉布斯自由能势垒增大,致使偶极子对交变电场的响应时间延长.引入响应的滞后因子发现,极化强度随温度降低会出现峰值,在低温下降直至为零,可用偶极子的滞后与冻结效应描述.详细研究结果表明:因材料组份变化导致热力学参量的变化是重要因素:铁电-顺电相变中软模系数的增大会导致剩余极化峰移向高温;铁电性的增强,温度极化系数的增大和耐压强度或饱和电场的增强均会抑制滞后效应,从而使低温滞后效应移向低温.运用导出的公式数值模拟Ba Ti O_3/Bi Sc O_3复合陶瓷剩余极化强度的实验结果发现,Bi Sc O3含量的增加,使居里温度略有减小,但导致了软模系数较大幅度的增加,其结果是使偶极子的滞后效应发生在较高的温度.软模系数与铁电体的极化特性、铁电性、介电性和力学性均密切相关.研究结论表明:在低温下铁电体的铁电性没有失效,偶极子的低温冻结效应更有利于铁电体长久地保存数据.     

1-3型纳米多铁复合薄膜中电场诱导的磁化研究

运用Landau-Devonshire热力学唯像理论,考虑铁电相和铁磁相的电致伸缩、磁致伸缩效应以及产生于铁电/铁磁和薄膜/基底界面的弹性应力作用,两次重整介电和磁作用系数得到了这种多铁系统在Landau自由能函数下的本征二次方磁电耦合形式,从而研究了外延1-3型纳米多铁复合薄膜中极化、磁化随薄膜厚度、温度的变化以及该薄膜中外加电场诱导的磁化变化.结果表明薄膜平面内的应压力的弛豫使得磁化强度和极化强度随薄膜厚度的增加而减少,外加电场不仅能诱导铁电相极化场翻转,而且由于铁电和铁磁相界面竖直方向的弹性耦合导致 关键词： 多铁 磁电效应 磁致伸缩 薄膜     

相场模拟应变调控PbZr_((1–x))Ti_xO_3薄膜微观畴结构和宏观铁电性能

外延生长铁电薄膜中基底失配应变能够调控微观铁电畴结构和宏观铁电性能.本文选择了三种相结构(四方相、四方和菱方混合相、菱方相) PbZr_((1–x))Ti_xO_3 (x=0.8, 0.48, 0.2)铁电薄膜,利用相场模拟研究了在不同基底失配应变(esub)作用下,三种成分铁电薄膜中微观畴结构的演化以及宏观极化-电场回线.随着应变从–1.0%变化到1.0%,三种相结构铁电薄膜的矫顽场、饱和极化值以及剩余极化值全都降低,其中PbZr_(0.52)Ti_(0.48)O_3薄膜的饱和极化值和剩余极化值比另外两种薄膜降低更快.模拟结果表明拉应变能提高铁电薄膜储能效率,其中准同型相界处应变提升储能效率最快.本工作揭示了应变对PbZr_((1–x))Ti_xO_3铁电薄膜中畴结构、电滞回线以及储能等方面的影响,为铁电功能薄膜材料的实验设计提供了理论基础.     

Potts-Ising model for simulation of polarization switching in polycrystalline ferroelectrics

This paper proposes a scheme based on the Potts and Ising models for simulating polarization switching of polycrystalline ferroelectrics using the Monte Carlo method. The polycrystalline texture with different average grain size is produced from the Potts model. Then Ising model is implemented in the polycrystalline texture to produce the domain pattern and hysteresis loop. The domain patterns and hysteresis loops have been obtained for polycrystalline texture with different average grain size. From the results of domain pattern evolution process under an applied electric field using this scheme, an extended domain, which covers more than one grain with polarization aligned roughly in the same direction, has been observed during the polarization reversal. This scheme can well reproduce the basic properties of polycrystalline ferroelectrics and is a valuable tool for exploring the physical properties of polycrystalline ferroelectrics.     

Simulation of flexoelectricity effect on imprint behavior of ferroelectric thin films

The impact of flexoelectricity on the imprint behavior in ferroelectric thin films has been investigated within the framework of Landau-Khalatnikov theory, by incorporating the coupling effect between the stress gradient and polarization. It is found that the imprint phenomenon can be in part induced by flexoelectricity. In the presence of flexoelectric coupling, the compressive stress shifts the hysteresis loop to the negative electric field axis, but the tensile stress shifts it to the opposite direction, which is in good agreement with experimental result. Besides, the characteristic length of stress distribution has a significant influence on the upper part of hysteresis loop. It highlights the pressing need to avoid the stress gradient in order to prevent degradation of device performance in ferroelectric thin films.     

Dynamic hysteresis for Potts spin system: a Monte Carlo simulation

A Monte Carlo approach based on the Q-state Potts model is developed to describe and simulate the dynamic hysteresis of Potts spin lattice against periodic time-varying external field E. The dynamic responses of the hysteresis loops against frequency P of applied field and domain size R are studied. It is revealed that the hysteresis loops for the system energy W, polarization P, and domain wall fraction @ depend considerably on the frequency and domain size. The remnant polarization P_r shows a single-peak pattern as a function of P. The P-E loop exhibits thin rhomb and fat rhomb patterns at low P, whereas a tip-smoothed rhomb and roughly elliptical pattern is observed at high P. The loop area can be scaled with Q,P^1/3 at low P. The frequency dependency of the dynamic hysteresis is explained in terms of a simplified phenomenological model. At very small domain size, the dynamic hysteresis is significantly compressed, predicting the polarization weakening effect at small domain size.     

Rochelle salt in an inhomogeneous electric field

The parameters of the hysteresis loop in the ferroelectric Rochelle salt were investigated using a sample with two pairs of electrodes: measurement electrodes and the side ones. It has been shown that the difference between the potentials of the measurement and the side electrodes (generating an inhomogeneous electric field) leads to gradual decay in time t of the remanent polarization P_r. The time required for the hysteresis loop to disappear in the inhomogeneous electric field (not parallel to the ferroelectric axis) decreases with temperature increase from 44±3 h at – 9°C to 2.3±0.1 h at 21.9 °C. On the other hand, the crystal placed for a sufficiently long time simultaneously in the measuring electric field and in the constant inhomogeneous one may finally exhibit a stationary hysteresis loop with a reduced remanent polarization and the unchanged coercive field. It has been shown that the crystal as a whole does not have to be polarized perpendicularly to the ferroelectric axis in order for its hysteresis loop to be reduced.     

Investigation into the special features of the dielectric and polarization properties of lithiumtitanium ferrite ceramics

Loop-shaped dependences of the electric polarization on the electric field strength (the dielectric hysteresis) are registered for the first time for polycrystalline Li–Ti ferrite. Temperature evolution of the hysteresis loop parameters is investigated for ferrite samples. The results obtained can be interpreted from the viewpoint of the Maxwell–Wagner relaxation polarization or induced ferroelectric-like state in the electric ferrite subsystem.     

The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

A wealth of studies have confirmed that the low‐field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro‐mechanism. Recently, HfO₂ thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub‐coercive polarization reversal properties were investigated for 10 nm thick Si‐doped HfO₂ thin films. The applicability of the Rayleigh law to ultra‐thin ferroelectric films was first confirmed, indicating the existence of a multi‐domain structure. Since the grain size is about 20–30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Investigation of domain structure of TGS single crystal after a transverse electric field by piezoresponse force microscopy

An investigation of the influence of electric field transverse to the ferroelectric axis b_HOP and parallel to c_HOP axis of triglycine sulfate (TGS) single crystal on ferroelectric domain structure was performed by piezoresponse force microscopy. To check if the applied electric field changed the dielectric properties and ferroelectric domain structure the hysteresis loop measurements were carried out as well as observations of domain structure by the liquid crystal technique. The investigation revealed existence of blocked domains in the crystal modified by the electric field TGS.     

原位Raman光谱技术应用于铁电陶瓷畴变与电疲劳研究

基于铁电陶瓷材料90°畴变导致Raman光谱变化的原理,自行设计并搭建了铁电材料原位测试分析和数据采集系统,通过与Raman光谱仪的联用,利用特制的样品旋转装置,从实验上证实在外加电场作用下铁电材料中的90°畴变使平均电畴的择优取向发生改变,从而导致Raman光谱强度的变化,利用铁电材料原位测试分析和数据采集系统,实现...     

Ferroelectric Properties of Polycrystalline Ceramics with Dipolar Defect Simulated from the Potts--Ising Model

Physical properties of polycrystailine ferroelectrics including the contributions of the fixed dipolar defects and the average grain size in the Potts-Ising model are simulated by using the Monte Carlo method. Domain pattern, hysteresis loop and switching current of the polarization reversal process are obtained. Two processes are considered in our simulation. In the first one, the grain texture of ferroelectric ceramics are produced from the Ports model, and then the Ising model is implemented in the obtained polycrystailine texture to produce the domain pattern, hysteresis loop and switching current. It is concluded that the defect has the ability to decrease the remnant polarization P~ as well as the coercive field E~. The back switching is obviously observed after the electric field is off, and it shows some variation after introducing the fixed dipolar defect. Meanwhile, the spike of the switching current is found to lower with the increasing defect concentration and the decreasing average grain size.