半金属磁性材料

半金属材料的一个重要特征为具有高达100%的传导电子自旋极化率。半金属磁性材料是一种具有极大的应用潜能的自旋电子学材料。本文从半金属性的来源、材料的晶体结构、半金属的电子态和电磁特性等不同角度对半金属材料进行了系统分类。对现已发现的几种半金属材料的基本性质和原子结构特征进行了综述。分别对5种传导电子自旋极化率的测量方法进行了分析和讨论。     

半金属磁体

半金属磁体是近些年来日益受到关注的一种新材料，也是物质具有一种新形态，在半金属磁体的能带结构中，两个自旋子能带分别具有金属性与绝缘性，从而产生自旋完全极化的传导电子，这一特性使它有可能在新一代微电子设备中发挥重要作用，并为极化输运理论及自旋电子学的研究开辟崭新的领域，文章主要介绍了半金属磁体的命名、特征和几种典型的材料，回顾了在寻找半金属磁体过程中的理论计算和实验研究的发展历程，并对巳在半金属磁体材料中发现的一些具有应用价值的磁输运现象作了阐述。     

第五讲 自旋极化输运及隧道巨磁电阻效应

简要回顾了利用量子隧道效应测定铁磁金属传导电子自旋极化率的研究历史，综述了自旋极化电子隧穿产应导致的“铁磁金属／非磁绝缘体／铁磁金属”三层平面型隧道结中的巨磁电阻效应以及“铁磁金属／非磁绝缘体”颗粒膜系统中的隧穿类型巨磁电阻效应的研究进展。     

三元化合物ZnVSe2半金属铁磁性的第一性原理计算

采用基于密度泛函理论(DFT)框架下的第一性原理平面波赝势(PWP)方法,结合广义梯度近似(GGA),对三元化合物ZnVSe₂晶体的电子结构进行了计算,分析了ZnVSe₂晶体自旋极化的能带结构、电子态密度、电荷布居、磁矩等.计算结果表明,三元化合物ZnVSe₂会产生自旋极化状态,能带结构和态密度显示为半金属特征,表现出显著的铁磁性行为,具有高达近100%的传导电子自旋极化率,其半金属能隙为0.443eV,理论预测其可能是一种具有一定应用潜能 关键词： 2')" href="#">ZnVSe₂ 平面波赝势方法 半金属铁磁性 第一性原理     

磁电子学讲座 第五讲 自旋极化输运及隧道巨磁电阻效应

简要回顾了利用量子隧道效应测定铁磁金属传导电子自旋极化率的研究历史．综述了自旋极化电子隧穿效应导致的“铁磁金属／非磁绝缘体／铁磁金属”三层平面型隧道结（简称ＦＭ／Ｉ／ＦＭ隧道结）中的巨磁电阻效应以及“铁磁金属／非磁绝缘体”颗粒膜系统中的隧穿类型巨磁电阻效应的研究进展．     

半金属磁性材料研究进展

半金属材料是一种新型的功能自旋电子学材料，是一种具有特殊能带结构的物质，近年来13益受到人们的关注。半金属材料从微观上具有导体和绝缘体双重性质：对一种自旋取向的电子其能带结构呈现金属性，而另一自旋取向的电子其能带结构呈现绝缘体性．文章着重对Half—Heusler结构半金属材料、CrO2铁磁半金属、Fe3O4亚铁磁材料半金属、反铁磁材料半金属和钙钛矿及双钙钛矿半金属的结构特性进行分析和综述，并对半金属材料的应用原理和应用前景作了阐述。     

铁磁、肖特基金属和半导体纳米自旋过滤器中的量子尺寸效应

采用转移矩阵法,研究了结构尺度对自旋过滤器中电子自旋极化特性的影响．该自旋过滤器可以通过在半导体异质结上沉积纳米尺度的铁磁条带和肖特基金属条带来实现．计算结果表明,电子的自旋极化特性强烈依赖于铁磁条带和肖特基金属条带的结构尺度和位置,即该器件中存在量子尺寸效应．此外,我们的计算结果还表明,电子的自旋极化特性还与施加在肖特基金属条上的电压所诱发的电垒高度密切相关．因此,我们可以通过改变施加在肖特基金属条上的电压来调控该器件中电子的自旋极化特性,制造一个电压可调的电子自旋过滤器．     

铁磁、肖特基金属和半导体纳米自旋过滤器中的量子尺寸效应

采用转移矩阵法,研究了结构尺度对自旋过滤器中电子自旋极化特性的影响.该自旋过滤器可以通过在半导体异质结上沉积纳米足度的铁磁条带和肖特基金属条带来实现.计算结果表明,电子的自旋极化特性强烈依赖于铁磁条带和肖特基金属条带的结构尺度和位置,即该器件中存在量子足寸效应.此外,我们的计算结果还表明,电子的自旋极化特性还与施加在肖特基金属条上的电压所诱发的电垒高度密切相关.因此,我们可以通过改变施加在肖特基金属条上的电压来调控该器件中电子的自旋极化特性,制造一个电压可调的电子自旋过滤器.     

Heusler合金中近半金属性质的讨论:一种近半金属性质评估标准

如今在Heusler合金中发现了众多适用于自旋电子学领域的半金属材料及自旋无隙半导体,与此同时也伴随发现了一系列不能简单归类为半金属或金属的材料.为了促进这些化合物在自旋电子学领域的应用,本文提出了一种关于Heusler合金中近半金属性质的评估标准,即当一种材料的带隙在费米能级附近0.30 eV或0.2个电子态以内,具有一定的磁矩且没有高的电导时,可以判定其为近半金属材料.这项标准能够帮助Heusler合金在自旋电子学领域得到更全面地应用,并举一些示例加以说明.     

硅团簇自旋电子器件的理论研究

利用过渡金属掺杂的硅基团簇, 构建了一种自旋分子结; 并利用第一性原理方法, 对其电子自旋极化输运性质进行了研究. 计算表明, 通过过渡金属掺杂可以有效地产生自旋极化电流, 磁性金属Fe和非磁性金属Cr和Mn掺杂的体系呈现出较明显的自旋极化透射现象, 但分子结的自旋极化输运能力与团簇孤立状态下的磁矩无一致性.从Sc到Ni的掺杂, 体系的自旋极化透射能力先增大后迅速减小, 在Fe掺杂的Si₁₂团簇中出现最大值. 关键词： 硅团簇 自旋极化输运 密度泛函理论 非平衡格林函数     

Experimental study of polarization bremsstrahlung from small-grained polycrystals

The spectrum of polarization Bremsstrahlung is measured in backscattering geometry for 7-MeV electrons and a polycrystalline Ni foil without texture. The average size of grains in the foil is 300 nm. The results show the possibility of using a new method in the diagnostics of the atomic structure of polycrystalline materials with nanosized grains. The method is based on measuring the coherent component of polarization Bremsstrahlung.     

Theoretical study on spin-polarized injection of electrical currents into polymer semiconductors

Different from electrons and holes in traditional inorganic semiconductors, the charge carriers in polymer semiconductors are spin polarons and spinless bipolarons. In this paper, a theoretical model is presented to describe the spin-polarized injection of electrical currents from a ferromagnetic contact into a nonmagnetic polymer semiconductor. In this model, a new relation of conductivity to concentration polarization for polymer semiconductors is introduced based on a three-channel model to describe the spin-polarized injection of electrical currents under large electrical current densities. The calculated results of the model reveal the effects of the polaron ratio, the carrier concentration polarization, the interfacial conductance, the bulk conductivity of materials, and the electrical current density, etc. on the spin polarization of electrical currents. As conclusions, the large and matched bulk conductivity of materials, the small spin-dependent interfacial conductance, the thin polymer thickness and the large enough electrical current are critical factors for upgrading the spin polarization of electrical currents in polymer semiconductors. Particularly, when the polaron ratio in polymer semiconductors approaches the concentration polarization of the ferromagnetic contact, a modest concentration polarization is sufficient for achieving a nearly complete spin-polarized injection of electrical currents.     

Effect of Electric Current on the Spin Polarization of Electrons in Materials with Nonuniform Magnetization

Journal of Experimental and Theoretical Physics - The nonequilibrium magnetization (spin polarization) of conducting electrons moving in materials with a nonuniform magnetization distribution is...     

Generation and propagation of hot electrons in laser-plasmas

Hot electrons are generated in the interaction between intense ultrashort laser pulses with targets. The process depends on the laser intensity, polarization, incident angle, scale length of plasmas and target materials. In this paper, the recent progress on generation and propagation of hot electrons in non-relativistic and relativistic laser-plasma interactions at the Institute of Physics, Chinese Academy of Sciences, are reviewed.     

Ultralow-noise near-infrared detection system with a Si p-i-n photodiode

Noises associated with materials and devices in the readout circuits for a Si p-i-n photodiode have been measured. The dielectric polarization noise of the materials and devices near the gate circuit of the junction field-effect transistor used for the preamplifier determined the photodetection limits of photodiodes with a diameter smaller than several millimeters. We fabricated an ultralow-noise photodetection system, minimizing the polarization noise as much as possible. The readout noises of the system were 10 and 18 electrons in a correlated double sample for 0.1- and 1-mm-diameter Si p-i-n photodiodes at 77 K, respectively.     

Note on RKKY interactions in nearly-free electron systems

The RKKY interaction between localized magnetic moments via polarization of conduction electrons is calculated for systems with spherical, but non-quadratic conduction electron dispersion. It is shown that even rather small changes in the electron dispersion may produce large modifications of the density of electronic states and therefore deviations from the common RKKY expression derived for free electrons. The results might be important for the discussion of interaction mechanisms in amorphous ferromagnetic materials.     

Hyperfine fields and the polarization of conduction electrons in semimetallic Heusler alloys

The distribution of hyperfine fields in half-metallic Heusler alloys is measured using the nuclear spin-echo method. The results from studying a great many series of samples of different composition reveal the enormous problems in obtaining materials with increased polarization of conduction electrons via the usual method of varying their composition. Other alternatives are proposed.     

Polycrystalline material diagnostics based on the peak of polarization bremsstrahlung radiation propagation against the velocity of emitting electrons

We discuss the possibility of using an anomalous peak of polarization bremsstrahlung radiation from relativistic electrons for the diagnostics of polycrystalline materials.     

The net charge at interfaces between insulators

The issue of the net charge at insulating oxide interfaces is briefly reviewed with the ambition of dispelling myths of such charges being affected by covalency and related charge density effects. For electrostatic analysis purposes, the net charge at such interfaces is defined by the counting of discrete electrons and core ion charges, and by the definition of the reference polarization of the separate, unperturbed bulk materials. The arguments are illustrated for the case of a thin film of LaAlO(3) over SrTiO(3) in the absence of free carriers, for which the net charge is exactly 0.5e per interface formula unit, if the polarization response in both materials is referred to zero bulk values. Further consequences of the argument are extracted for structural and chemical alterations of such interfaces, in which internal rearrangements are distinguished from extrinsic alterations (changes of stoichiometry, redox processes), only the latter affecting the interfacial net charge. The arguments are reviewed alongside the proposal of Stengel and Vanderbilt (2009 Phys. Rev. B 80 241103) of using formal polarization values instead of net interfacial charges, based on the interface theorem of Vanderbilt and King-Smith (1993 Phys. Rev. B 48 4442-55). Implications for non-centrosymmetric materials are discussed, as well as for interfaces for which the charge mismatch is an integer number of polarization quanta.     

基于散射实验极化靶的2.5T/1.3K的动态核极化(DNP)系统的开发

动态核极化法(Dynamic Nuclear Polarization, DNP)是利用热平衡下的电子在磁场中的高自旋极化率转移到原子核自旋的技术,从而极大的提高原子核自旋极化率。多种动态极化靶材料已广泛的用于自旋物理散射实验。本文介绍一种简单实用,共同开发的日本山形大学DNP系统,包括超导磁场,氦4蒸发恒冷器,微波系统以及NMR核磁共振检测系统,测得中子靶材料氘带丁醇(D-butanol)中氘核的极化率在2.5T/1.3K达到+6.5%。