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1.
将V2O5粉体与WO3粉体均匀混合并压制成靶,用离子束增强沉积加后退火技术在SiO2衬底上制备掺钨VO2多晶薄膜.X射线衍射表明,薄膜取向单一,为VO2结构的[002]相,晶格参数d比VO2粉晶增大约0.34%;薄膜从半导体相向金属相转变的相变温度约28;室温(300 K)时的电阻-温度系数(TCR)可大于10%/K,是目前红外热成像薄膜TCR的四倍.W离子的半径大于V离子的半径,W的掺入在薄膜中引入了张应力,使薄膜相变温度降低到室温附近,是IBED V0.97W0.03O2薄膜的室温电阻温度系数提高的原因. 关键词: 二氧化钒薄膜 薄膜掺杂 离子束增强沉积  相似文献   

2.
磁控溅射法制备的CaCu3Ti4O12薄膜   总被引:2,自引:0,他引:2       下载免费PDF全文
周小莉  杜丕一 《物理学报》2005,54(4):1809-1813
采用溅射方法成功地制备了CaCu33Ti44O1212薄膜, 用原子力显微镜、x射线衍射(XRD)仪和LCR分析仪对样品进行形貌、物相结构和介电性质的研究.XRD表明,薄膜比块体的晶 格常数小但晶格畸变较大;LCR测量结果显示,在相同温度下薄膜比块体的相对介电常数低 ,薄膜相对介电常数由低到高转变时对应的温度较高且激活能较大.分析表明:薄膜的相对 介电常数较低是样品中晶相含量较低、缺陷较多使内部阻挡层电容大量减小、致密度不高引 起的;薄膜中 关键词: 磁控溅射 3Ti44O1212')" href="#">CaCu33Ti44O1212 介电常 数 激活能  相似文献   

3.
ECR-PECVD制备Si3N4薄膜沉积工艺的研究   总被引:4,自引:0,他引:4       下载免费PDF全文
由偏心静电单探针诊断了电子回旋共振等离子体增强化学汽相沉积(ECR-PECVD)反应室内等离子体密度的空间分布规律.结果表明在轴向位置Z=50cm处,直径Φ12cm范围内等离子体密度分布非常均匀.分析了等离子体密度径向均匀性对沉积速率均匀性和薄膜厚度均匀性的影响.讨论了沉积制备一定薄膜厚度的Si3N4薄膜的工艺重复性.研究了各种沉积工艺参数与Si3N4薄膜沉积速率的相互关系.得到了ECR-PECVD技术在沉积薄膜时的工 关键词:  相似文献   

4.
用化学溶液方法在宝石衬底及有LaNiO3缓冲层的Pt/TiO2/SiO2/Si衬底上制备了92%Pb(Mg1/3Nb2/3)O3-8%PbTiO3(PMNT)薄膜,X射线衍射测试结果表明:在有LaNiO3缓冲层的Pt/TiO2/SiO2/Si衬底上制备的PMNT薄膜几乎是纯钙钛矿相,且薄膜 关键词: PMNT薄膜 光学性能 化学溶液法  相似文献   

5.
王合英  姜恩永  马振伟  何元金 《物理学报》1998,47(11):1912-1916
研究了掺杂Ti对α″-Fe16N2相稳定性的影响,发现适量Ti掺杂有利于α″-Fe16N2相的形成.理论分析表明,掺杂适量Ti元素后含Ti的α″-(Fe,Ti)16N2相的生成焓降低,使α″相的稳定性提高,也使α″相更易制备.Ti浓度为3—15at%的(FeTi)-N薄膜具有高饱和磁化强度,μ0Ms=2.3—2.5T. 关键词:  相似文献   

6.
敖琪  张瓦利  张熠  吴建生 《物理学报》2005,54(10):4889-4893
利用磁控溅射法制备了Nd28Fe66B6/Fe50Co50 双层纳米复合磁性薄膜,研究了其结构和磁性.经873K退火处理15min 后,利用x射线衍射仪测定薄膜晶体结构,采用俄歇电子能谱仪估算薄膜厚度和超导量子干 涉仪测量其磁性.磁性测量表明,1)该系列薄膜具有垂直于膜面的磁各向异性.从起始磁化曲 线和小回线的形状特征可知,矫顽力机制主要是由畴壁钉扎控制.2)对于固定厚度(10nm) 层的硬磁相Nd-Fe-B和不同厚度(dFeCo=1—100nm)层软磁相FeCo双层纳米复合 膜,剩磁随软磁相FeCo 厚度的增加快速增加,而矫顽力则减少.当dFeCo=5nm 时 ,最大磁能积达到160×10A/m.磁滞回线的单一硬磁相特征说明,硬磁相Nd -Fe-B层和软磁相FeCo层之间的相互作用使两相很好地耦合在一起.剩磁和磁能积的提高是由 于两相磁性交换耦合所致. 关键词: Nd-Fe-B/FeCo双层纳米复合膜 交换耦合 磁性增强  相似文献   

7.
邱东江  王俊  丁扣宝  施红军  郏寅 《物理学报》2008,57(8):5249-5255
以NH3为掺N源,采用电子束反应蒸发技术生长了Mn和N共掺杂的Zn1-xMnxO:N薄膜,生长温度为300℃,然后在O2气氛中400℃退火0.5 h.X射线衍射测量表明,Zn0.88Mn0.12O(Mn掺杂)薄膜或Zn0.88Mn0.12O:N(Mn和N共掺杂)薄膜仍具有单一晶相纤锌矿结构,未检测到杂质相 关键词: ZnO薄膜 Mn和N共掺杂 电学特性 磁特性  相似文献   

8.
采用脉冲激光沉积(PLD)技术,利用LSCO/CeO2/YSZ多异质缓冲层,在Si(100)基 片上成功地制备了c轴一致取向的Bi3.15Nd0.85Ti3O12(BNT)铁电薄膜.利用X射线衍射(XRD)和扫描电镜(SEM)分析测定了薄膜的相结构 、取向和形貌特征,考察了沉积温度和氧分压对BNT薄膜微结构、取向和形貌的影响,确定 了BNT薄膜的最佳沉积条件.对在优化的条件下制备得到的BNT薄膜的C-V曲线测试得到了典型 的蝴蝶形曲线,表明该薄膜具有较好的电极化反转存储特性.最后讨论了BNT薄膜铁电性能与 薄膜取向的相关性. 关键词: 3.15Nd0.85Ti3O12')" href="#">Bi3.15Nd0.85Ti3O12 铁电薄 膜 多层异质结 脉冲激光沉积  相似文献   

9.
利用磁控溅射和快速热处理的方法制备了Mn,B共掺的多晶硅薄膜(Si0.9654Mn0.0346:B).磁性和结构研究发现薄膜有两个铁磁相.低温铁磁相来源于杂相Mn4Si7,高温铁磁相(居里温度TC~250K)是由Mn原子掺杂进入Si晶格导致.晶化后的薄膜利用射频等离子体增强化学气相沉积系统(PECVD)进行短暂(4min)的氢化处理后发现,薄膜的微结构没有发生变化而饱和磁化强度却随着 关键词: 磁性半导体 硅 氢化  相似文献   

10.
在低温Pt/Ti/SiO2/Si衬底上用脉冲准分子激光沉积技术结合氧气氛下700℃退火获得高质量的SBT薄膜,其择优取向为(008)和(115).薄膜厚度约为200nm.铁电性能测试显示较饱和的、方形的电滞回线,其剩余极化和矫顽电场分别为10μC/cm2和57kV/cm,在1010次开关极化后没有显示任何疲劳,在5V直流电压下的漏电流密度约为4×10-8A/cm2,直流击穿电场约为250kV/cm 关键词:  相似文献   

11.
Nitrogen-doped TiO2 (N-TiO2) films were prepared by low-energy implantation of nitrogen ions into pulsed laser deposited anatase TiO2 films. The anatase phase of the films was not changed by the implantation with very low energy of 200 eV. XPS measurements revealed that the implanted nitrogen species were mainly interstitial ones. The nitrogen concentration was increased with increasing ion flux which could be controlled by adjusting the gas flow rate of the ion source. All the produced N-TiO2 films exhibited visible-light photocatalytic activities in degradation of methylene blue in aqueous solutions, indicating that interstitial nitrogen could also be responsible for the photocatalysis in visible region. Higher visible-light photocatalytic efficiency was achieved with higher implanted nitrogen concentration.  相似文献   

12.
采用脉冲激光沉积法分别在(100)LaAlO3和(100)SrTiO3基片上生长了La0.33Pr0.34Ca0.33MnO3薄膜,并通过磁测量和电输运测量对生长在不同基片上的La0.33Pr0.34Ca0.33MnO3薄膜的物性进行了研究.结果表明,基片和薄膜之间的压应力导致La关键词: 钙钛矿锰氧化物 相分离 电荷有序  相似文献   

13.
Anatase phase TiO2 and nitrogen (N) doped TiO2 thin films were synthesized by an ultrasonic spray pyrolysis technique on c-Si (100) substrates in the temperature range 300-550 °C. The former used a precursor solution of titanium oxy acetylacetonate in methanol whereas the later used a titanium oxy acetylacetonate hexamine mixture in methanol. Homogeneity across the film’s thickness and the nature of the film-substrate interface were studied by dynamic depth profiling acquired using secondary ion mass spectrometry SIMS. The stoichiometry and bonding state of various species present in the films were studied using X-ray photoelectron spectroscopy (XPS). N-doping was confirmed by both SIMS and XPS. XPS studies revealed that the nitrogen content of the films synthesized at 300 °C (3.2%) is high compared to that of films made at 350 °C (1.3%).  相似文献   

14.
采用微波等离子体化学气相沉积法,用高纯氮气(99.999%)和甲烷(99.9%)作反应气体,在单晶Si(100)基片上沉积C3N4薄膜.利用扫描电子显微镜观察薄膜形貌,表明薄膜由密排的六棱晶棒组成.X射线衍射和透射电子显微镜结构分析说明该薄膜主要由β-C3N4和α-C3N4组成,并且这些结果与α-C3N4相符合较好.由虎克定律近似关 关键词: 3N4')" href="#">C3N4 微波等离子体化学气相沉积法 薄膜沉积  相似文献   

15.
We have shown that ultra-thin La0.65Ca0.35MnO3 films exhibit strong metastable behavior. The resistance can vary with time significantly, suggesting that a state of dynamic phase separation exists whereby one phase grows at the expense of another. Physical properties associated with the metastable behavior have been investigated on the films grown on different substrates. We have found that ultra-thin films age much faster than the thicker counterparts and more interestingly the metastability in the resistance of these films enhanced when aged.  相似文献   

16.
As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb2S3 thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (Eg) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb2S3 thin films decreased from 108 to 106 Ω-cm after plasma treatments.  相似文献   

17.
Ca-doped YBa2Cu4O8 (124) thin films are prepared on (100) SrTiO3 substrates by annealing the amorphous films deposited using a pulsed laser deposition technique. The X-ray diffraction measurements show that the Ca-doped YBa2Cu4O8 phase is formed by annealing below 800°C at a oxygen pressure of 1 atm. The 124 films have c-axis orientation normal to the substrates. As the Ca content increases, the proportion of the 123 impurity phase in the samples increases. The onset temperature of superconductivity of the Y(Ca)Ba2Cu4O8 films increases from 79 K to 88 K with an increase Ca-substitution for 5 to 10% of Y.  相似文献   

18.
Pure TiO2 and nitrogen doped titanium dioxide (N-TiO2) thin films were prepared by sol-gel method through spin coating on soda lime glass substrates. TiCl4 and urea were used as Ti and N sources in the sol. XRD results showed nitrogen doping has retarded anatase to rutile phase transformation. The doping also leads to a decrease in roughness of the samples from 4 nm (TiO2) to 1 nm (N-TiO2). However, surface analysis by statistical methods reveals that both surfaces have self-affine structure. Optical band gap of thin films was shifted from 3.65 eV (TiO2) to 3.47 eV (N-TiO2). Hydrophilic conversion and photocatalytic degradation properties of thin films were investigated and exhibited that N-TiO2 thin film has more preferable hydrophilicity and photocatalytic properties under UV illumination.  相似文献   

19.
Nanocrystalline diamond (NCD) films were grown on silicon substrates by hot filament chemical vapor deposition in Ar/N2/CH4 gas mixtures. The effects of seeding process prior to deposition, the total gas pressure, and concentration of nitrogen on the grain size, morphology and bonding nature in HFCVD technique were investigated. The results indicated that a low total gas pressure is favorable for nanosized diamond crystallites. Films micrograph obtained from scanning electron microscopy showed diamond nanograins elongated with the addition of nitrogen in the plasma. Crystal structure investigations were carried out by X-ray diffraction measurements for deposited films. An increase in the size of crystallite is also observed from XRD measurements in NCD film when nitrogen was added in plasma. From Raman spectra, it was observed that the relative intensity of G peak increases indicating more graphite content after nitrogen added in the plasma. The effects of the nitrogen incorporation in nanocrystalline films in HFCVD are discussed.  相似文献   

20.
We have grown lead iron niobate thin films with composition Pb(Fe1/2Nb1/2)O3 (PFN) on (0 0 1) SrTiO3 substrates by pulsed laser deposition. The influence of the deposition conditions on the phase purity was studied. Due to similar thermodynamic stability spaces, a pyrochlore phase often coexists with the PFN perovskite phase. By optimizing the kinetic parameters, we succeeded in identifying a deposition window which resulted in epitaxial perovskite-phase PFN thin films with no identifiable trace of impurity phases appearing in the X-ray diffractograms. PFN films having thicknesses between 20 and 200 nm were smooth and epitaxially oriented with the substrate and as demonstrated by RHEED streaks which were aligned with the substrate axes. X-ray diffraction showed that the films were completely c-axis oriented and of excellent crystalline quality with low mosaicity (X-ray rocking curve FWHM?0.09°). The surface roughness of thin films was also investigated by atomic force microscopy. The root-mean-square roughness varies between 0.9 nm for 50-nm-thick films to 16 nm for 100-nm-thick films. We also observe a correlation between grain size, surface roughness and film thickness.  相似文献   

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