Theoretical investigation of Cu-containing materials with different valence structure types: BaCu2S2, Li2CuSb,and LiCuS

Optoelectronics research requires cheap materials with a broad spectrum of optical, electronic, and structural properties. The class of Heusler compounds and ternary structures provide many possibilities for finding alternative group IV and III–V semiconductor compounds. This study introduces wider band gap materials for use in solar cells as an alternative to cadmium sulfide buffer layers. The buffer layer is inserted between the absorber layer (p-type) and the transparent window layer (n-type) to enhance the maximum amount of light transmission. Reasonable calculations are reported for the band gaps of copper-containing materials: LiCuS, BaCu₂S₂, and Li₂CuSb. Previous optical analysis measurements of these films determined that the band gaps were 1.8 and 1.9 eV for BaCu₂S₂ and LiCuS, respectively. In general, semiconductor compounds have been studied theoretically, but there are major differences between the experimental and theoretically calculated band gaps. A suitable calculation method for semiconductor compounds is described in this study. For the first time, calculations based on the Engel and Vosko method are introduced for these semiconductor compounds. This method yields band gaps that are comparable to the experimental values, which facilitate the development of microscopic analyses of these compounds. Direct band gaps of 1.15 and 1.7 eV were obtained for BaCu₂S₂ and LiCuS, respectively, whereas the indirect band gap was 0.7 eV for Li₂CuSb.     

First-principles calculations of structural, electronic, optical and elastic properties of magnesite MgCO3 and calcite CaCO3

Detailed ab initio calculations of the structural, electronic, optical and elastic properties of two crystals - magnesite (MgCO₃) and calcite (CaCO₃) - are reported in the present paper. Both compounds are important natural minerals, playing an important role in the carbon dioxide cycling. The optimized crystal structures, band gaps, density of states diagrams, elastic constants, optical absorption spectra and refractive indexes dependence on the wavelength all have been calculated and compared, when available, with literature data. Both crystals are indirect band compounds, with calculated band gaps of 5.08 eV for MgCO₃ and 5.023 eV for CaCO₃. Both values are underestimated by approximately 1.0 eV with respect to the experimental data. Although both crystals have the same structure, substitution of Mg by Ca ions leads to certain differences, which manifest themselves in noticeable change in the electronic bands profiles and widths, shape of the calculated absorption spectra, and values of the elastic constants. Response of both crystals to the applied hydrostatic pressure was analyzed in the pressure range of phase stability, variations of the lattice parameters and characteristic interionic distances were considered. The obtained dependencies of lattice constants and calculated band gap on pressure can be used for prediction of properties of these two hosts at elevated pressures that occur in the Earth's mantle.     

β-C3N4,β-Si3N4和β-Ge3N4的能带结构

采用基于密度泛函理论的线性丸盒轨道原子球近似(LMTO-ASA)从头计算方法,研究了β-C₃N₄,β-Si₃N₄和β-Ge₃N₄的能带结构,得到了它们的能隙分别为:4.1751,5.1788和4.0279eV。对于β-C₃N₄,由于N的部分2p电子占据了非键轨道,禁带宽度较窄;对于β-Si₃N_{4关键词：}     

Valence band photoemission spectroscopy of a ternary layered semiconductor: ZnIn2S4

UV photoemission spectroscopy (UPS) experiments have been carried out on the layer compound ZnIn₂S₄ employing several different photon energies in the range $\text{h}\text{?}{}_{\mathrm{\omega }}\text{= 9.5?21.2}\text{eV}$. The energy distribution curves (EDC's) exhibit four valence band density of states structures besides the Zn 3d peak. These five peaks appear 0.90 eV, 1.6 eV, 4.3 eV, 5.8 eV and 8.7 eV respectively below the top of the valence band, E_v. The atomic orbital character of the shallowest peak A appears different from that of the three deeper valence band peaks B, C and D and this is discussed in terms of the more or less pronounced ionic character of the intralayer chemical bonds. These results demonstrate that an overall understanding of the electronic states in complex structures can be achieved by an approach based on photoemission experiments and chemical bonding considerations which has been widely used in the past to study simple binary layer compounds.     

Full potential calculation of electronic properties of rutile RO2 (R=Si, Ge, Sn and Pb) compounds via modified Becke Johnson potential

The electronic properties of RO₂ (R=Si, Ge, Sn and Pb; a group IVA element) compounds in rutile structure have been calculated using WIEN2k implementation of full potential linearized augmented plane wave (FPLAPW) method. The exchange and correlation (XC) effects are taken into account by an orbital independent modified Becke Johnson (MBJ) potential as coupled with Local Density Approximation (LDA) for all the compounds except for PbO₂ where only Generalized Gradient Approximation (GGA) is considered for the same. We predict a direct band gap in all these compounds with continuous decrease as the atomic size of IVA element increases such that there is an appearance of semimetallic band structure for the last compound, PbO₂. The largest band gap (7.66 eV) has been found for SiO₂, which governs its insulating nature. We observe that MBJLDA results for band gaps of these compounds are far better than those obtained using GGA and Engel-Vosko's GGA (EV-GGA). A very good agreement is observed between MBJLDA band gaps with corresponding experimental values as compared to other calculations. The electronic band structures are also analyzed in terms of contributions from various electrons.     

Cs2XF6 (X=Si,Ge) compounds: Common and different features as uncovered by the first-principles calculations

Results of ab initio calculations of the electronic, optical and elastic constants for Cs₂GeF₆ and Cs₂SiF₆ are reported for the first time. Both compounds are the direct band gap dielectrics, with the calculated band gaps 6.926 eV (Cs₂SiF₆) and 6.417 eV (Cs₂GeF₆). Analysis of the calculated elastic constants and Cauchy condition shows both crystals as slightly covalent compounds. However, with increased pressure chemical bonds in Cs₂GeF₆ turn to be more ionic, whereas in Cs₂SiF₆ the covalent character of chemical bonds is enhanced. Pressure dependence of the chemical bond lengths and lattice constants was determined and represented as the second power functions of external pressure. Different trends in the values of the Mulliken charges for both compounds were found. The obtained results are applicable to the analysis of the luminescence properties of impurity ions at varying pressure or to the microscopic studies of crystal field effects in these crystals.     

Structural,electronic, optical and elastic properties of the complex K2PtCl6-structure hydrides ARuH6 (A = Mg,Ca, Sr and Ba): first-principles study

We report a systematic study of the structural, electronic, optical and elastic properties of the ternary ruthenium-based hydrides A₂RuH₆ (A = Mg, Ca, Sr and Ba) within two complementary first-principles approaches. We describe the properties of the A₂RuH₆ systems looking for trends on different properties as a function of the A sublattice. Our results are in agreement with experimental ones when the latter are available. In particular, our theoretical lattice parameters obtained using the GGA-PBEsol to include the exchange-correlation functional are in good agreement with experiment. Analysis of the calculated electronic band structure diagrams suggests that these hydrides are wide nearly direct band semiconductors, with a very slight deviation from the ideal direct-band gap behaviour and they are expected to have a poor hole-type electrical conductivity. The TB-mBJ potential has been used to correct the deficiency of the standard GGA for predicting the optoelectronic properties. The calculated TB-mBJ fundamental band gaps are about 3.53, 3.11, 2.99 and 2.68 eV for Mg₂RuH₆, Ca₂RuH₆, Sr₂RuH₆ and Ba₂RuH₆, respectively. Calculated density of states spectra demonstrates that the topmost valence bands consist of d orbitals of the Ru atoms, classifying these materials as d-type hydrides. Analysis of charge density maps tells that these systems can be classified as mixed ionic-covalent bonding materials. Optical spectra in a wide energy range from 0 to 30 eV have been provided and the origin of the observed peaks and structures has been assigned. Optical spectra in the visible range of solar spectrum suggest these hydrides for use as antireflection coatings. The single-crystal and polycrystalline elastic moduli and their related properties have been numerically estimated and analysed for the first time.     

Half-metallic magnetism of Co2CrX (X=As, Sb) Heusler compounds: An ab initio study

In this study, we present the electronic, magnetic, and structural properties of two novel half-metallic full-Heusler compounds, Co₂CrAs and Co₂CrSb, in cubic L2₁ geometry. The calculations are based on the density functional theory within plane-wave pseudopotential method and spin-polarized generalized gradient approximation of the exchange-correlation functional. The electronic band structures and density of states of the systems indicate half-metallic behavior with vanishing electronic density of states of minority spins at Fermi level, which yields perfect spin polarization. The calculated magnetic moments of both systems in L2₁ structure are 5.00 μ_B, which are largely localized on the chromium site. The energy gaps in minority spin states are restricted by the 3d-states of cobalt atoms on two different sublattices. The formation enthalpies for both structures are negative indicating stability of these systems against decomposition into stable solid compounds.     

An ab initio study of PuO<Subscript>2±0.25</Subscript>, UO<Subscript>2±0.25</Subscript>, and U<Subscript>0.5</Subscript>Pu<Subscript>0.5</Subscript>O<Subscript>2±0.25</Subscript>

Hybrid density functional theory has been used to systematically study the electronic, geometric, and magnetic properties of strongly correlated materials PuO_2±x , UO_2±x , and U_0.5Pu_0.5O_2±x with x = 0.25. The calculations have been performed using the all-electron full- potential linearized augmented plane wave plus local orbitals basis (FP-L/APW+lo) method. Each compound has been studied at the ferromagnetic (FM) and anti-ferromagnetic (AFM) configurations with and without spin-orbit coupling (SOC) and full geometry optimizations. The optimized lattice constants, bulk moduli, and band gaps are reported. Total energy calculations indicate that the ground states are AFM for all compounds studied here and the band gaps are typically higher than 1.0 eV, characteristic of semiconductors. The total energy is lowered significantly and the band gaps increase with the inclusion of SOC. The chemical bonds between the actinide metals and oxygen atoms are primarily ionic in character.     

Half-metallicity and onsite Hubbard interaction on d-electronic states: a case study of Fe2NiZ (Z = Al,Ga, Si,Ge) Heusler systems

DFT-based structural optimisations of Fe₂NiZ (Z?=?Al, Ga, Si, Ge) Heusler compounds confirm the stability of these alloys in F-43m phase. While defining the electronic structure, onsite Hubbard approximation scheme for exchange correlations predicted better results than the generalised gradient approximation. Calculated band structure and densities of states together with spin magnetic moments designate the half-metallic character of these alloys. Indirect band gaps, 1.2?eV for Fe₂NiAl, 0.98?eV for Fe₂NiGa, 1.3?eV for Fe₂NiSi and 1.1?eV for Fe₂NiGe in spin-down states are observed. The ferromagnetic spin moments amount to an integral value of 5μB for (Al, Ga) and 6μB for (Si, Ge) systems with a maximum contribution from transition metal atom (Fe). To forecast the possible turnout of the thermopower, Seebeck coefficients, electrical and thermal conductivities are calculated, which directly hints the thermoelectric response of these materials. This study creates a possibility of these alloys in thermoelectrics and spintronics.     

Scanning tunneling microscope light emission spectra of polycrystalline Ge2Sb2Te5 and Sb2Te3

We have observed scanning tunneling microscope light emission (STM-LE) spectra of Ge₂Sb₂Te₅ and Sb₂Te₃. Although these chalcogenide alloys exhibit band gaps less than 0.5 eV, the STM-LE was observed with a narrow spectral width at a photon energy of 1.5 eV for both materials. By analyzing its bias voltage, polarity, and temperature dependencies combined with recently reported theoretical electronic structures, we concluded that the STM-LE is excited by electronic transitions taking place in the local electronic structure having a direct gap-like shape with a band gap of 1.5 eV, commonly found in the electronic structures of both materials.     

Investigation of structural,electronic, elastic and phonon properties of cubic spinel ZnM2O4(M = Co,Rh and Ir) compounds

The results obtained from ab initio calculations on ZnM₂O₄ (M = Co, Rh and Ir) compounds have been reported. The elastic constants, Bulk, Shear and Young modulus, and Poisson's ratios of the compounds are presented. In addition, full phonon dispersion curves and projected density of states of the compounds have been computed using the direct method. The lattice parameters (a) and internal parameters (u) are found to be in a good agreement with experimental results. According to both the B/G values and the Poisson's ratio, these compounds have covalent bondings. The analysis of the band structure of these compounds have indicated indirect band gaps of 1.25 eV for ZnCo₂O₄ and 1.14 eV for ZnRh₂O₄ and 0.86 eV for ZnIr₂O₄. The full phonon spectra of these compounds show that they are dynamically stable in the cubic spinel structure.     

First principle study of cubic perovskites: AgTF3 (T=Mg, Zn)

The structural, electronic and optical properties of AgTF₃ (T=Mg, Zn) are calculated for the first time using the full-potential linearized augmented plane wave method within the generalized gradient approximation. Structural parameters of the compounds are found to be in reasonable agreement with the available literature. Both compounds are found to have narrow and indirect band-gaps. The calculated band gap for AgMgF₃ is 0.78 eV and 0.75 eV for AgZnF₃. It is observed that Ag-4d, Zn-3d and Ag-5s states controls the electronic properties of AgMgF₃ and AgZnF₃. The nature of chemical bonding in these compounds is discussed by the electron density plots. The results of complex dielectric constant, refractive index, normal-incidence reflectivity and optical conductivity are also presented in the incident photon energy range of 0-35 eV. The wide absorption energy range makes these materials suitable for different devices applications.     

Theoretical investigations of the structural,electronic and optical properties of Hg1−xCdxTe alloys

The structural, electronic and optical properties of mercury cadmium telluride (Hg_1?xCd_xTe; x = 0.0, 0.25, 0.5, 0.75) alloys are studied using density functional theory within full-potential linearized augmented plane wave method. We used the local density approximation (LDA), generalized gradient approximation (GGA), hybrid potentials, the modified Becke–Johnson (LDA/GGA)-mjb and Hubbard-corrected functionals (GGA/LDA + U), for the exchange-correlation potential (E_ex). We found that LDA functional predicts better lattice constants than GGA functional, whereas, both functionals fail to predict the correct electronic structure. However, the hybrid functionals were more successful. For the case of HgTe binary alloy, the GGA + U functional predicted a semi-metallic behaviour with an inverted band gap of ?0.539 eV, which is closest to the experimental value (?0.30 eV). Ternary alloys, however, are found to be semiconductors with direct band gaps. For the x = 0.25 and 0.50, the best band gaps are found to be 0.39 and 0.81 eV using LDA-mbj functional, whereas, the GGA-mbj functional predicted the best band gap of 1.09 eV for Hg_0.25Cd_0.75Te alloy, which is in a very good agreement with the experimental value (1.061 eV). The optical properties of the alloys are obtained by calculating the dielectric function ?(ω). The peaks of the optical dielectric functions are consistent with the electronic gap energies of the alloys.     

Electronic Structure,Optical Properties,and Pressure Behavior of the CdB<Subscript>4</Subscript>O<Subscript>7</Subscript> and HgB<Subscript>4</Subscript>O<Subscript>7</Subscript> Compounds

Ab initio calculations of the structural, electronic, and optical properties of the CdB₄O₇ and HgB₄O₇ tetraborate compounds in three structural modifications with the Pbca, Cmcm, and Pmn2₁ symmetry have been performed in the framework of the density functional theory using the VASP package. The calculations of the electronic band structure showed that these compounds in all the investigated modifications are dielectrics with a band gap of 2–4 eV. The calculation of the structural properties of the tetraborates under pressure showed that the phase transition between the Pbca and Pmn2₁ structures in cadmium and mercury tetraborates occurs under pressures of 4.8 and 4.7 GPa, respectively.     

Dependence of electronic and optical properties of multilayer SiC and GeC on stacking sequence and external electric field

The electronic and optical properties of different stacked multilayer SiC and GeC are investigated with and without external electric field (EEF). The band gaps of multilayer SiC and GeC are found smaller than that of monolayer SiC and GeC due to the interlayer coupling effect. When EEF is applied, the direct band gaps (ΔK–M) of multilayer SiC and direct band gaps (ΔK–K) of multilayer GeC all turn to indirect band gaps (ΔK–G) as the band at the G point drops dramatically toward zero. The imaginary part ε₂(ω)s of multilayer SiC and GeC show that new absorption peaks between 2–5 eV appear when the polarized direction is perpendicular to the layer plane, and new absorption peaks in infrared region appear as the EEF is higher than a certain point when the polarized direction is parallel to the layer plane. Our calculations reveal that different stacking sequences and EEF can provide a wide tunable band structures and optical properties for multilayer SiC and GeC.     

Tunability of electronic and optical properties of the Ba–Zr–S system via dimensional reduction

Transition metal sulfide perovskites offer lower band gaps and greater tunability than oxides, along with other desirable properties for applications. Here, we explore dimensional reduction as a tuning strategy using the Ruddlesden–Popper phases in the Ba–Zr–S system as a model. The three-dimensional perovskite BaZrS₃ is a direct gap semiconductor, with a band gap of 1.5 eV suitable for solar photovoltaic application. However, the three known members of the Ruddlesden–Popper series, are all indirect gap materials, and additionally have lower fundamental band gaps. This is accompanied in the case of Ba₂ZrS₄ by a band structure that is more favorable for carrier transport for oriented samples. The layered Ruddlesden–Popper compounds show significantly anisotropic optical properties, as may be expected. The optical spectra show tails at low energy, which may complicate experimental characterization of these materials.     

A first-principles study of the electronic structure of the sulvanite compounds

We have investigated by means of first-principles total energy calculations the electronic structure of the sulvanite compounds: Cu₃VS₄, Cu₃NbS₄ and Cu₃TaS₄; the later is a possible candidate as a p-type transparent conductor with potential applications in solar cells and electrochromic devices. The calculated electronic structure shows that these compounds are indirect band gap semiconductors, with the valence band maximum located at the R-point and the conduction band minimum located at the X-point. The character of the valence band maximum is dominated by Cu d-states and the character of the conduction band minimum is due to the d-states of the group five elements. From the calculated charge density and electron localisation function we can conclude that the sulvanite compounds are polar covalent semiconductors.     

Comparison of the structural and magnetic properties of ground-state SrTcO3 and CaTcO3 from first principles

The generalized gradient approximation (GGA) plus on-site Coulomb interaction corrections (GGA+U) method is employed for the total energies and electronic structure calculations of SrTcO₃ and CaTcO₃. G-type antiferromagnetic (G-AFM) is found to be ground state for both compounds, in consistence with the previous experimental results. The mechanism of Neel temperature of SrTcO₃ being higher than that of CaTcO₃ is explored. The insulating band gaps of SrTcO₃ and CaTcO₃ are found to be 1.71 eV and 1.74 eV, respectively. The magnetic moment of Tc1 is found to be 2.237μ_B in SrTcO₃ unit cell and 2.266μ_B in CaTcO₃ unit cell. Structural parameters and electronic structure of the two compounds are examined to explore the origin of their different electrical and magnetic characters.