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1.
Highly oriented VO2(B), VO2(B) + V6O13 films were grown on indium tin oxide glass by radio-frequency magnetron sputtering. Single phase V6O13 films were obtained from VO2(B) +V6O13 films by annealing at 480℃ in vacuum. The vanadium oxide films were characterized by x-ray diffraction and x-ray photoelectron spectra (XPS). It was found that the formation of vanadium oxide films was affected by substrate temperature and annealing time, because high substrate temperature and annealing were favourable to further oxidation. Therefore, the formation of high valance vanadium oxide films was realized. The V6O13 crystalline sizes become smaller with the increase of annealing time. XPS analysis revealed that the energy position for all the samples was almost constant, but the broadening of the V2p3/2 line of the annealed sample was due to the smaller crystal size of V6O13.  相似文献   

2.
本文揭示了SrVO3和Sr2V2O7薄膜通过氧气或真空气氛中热处理来相互转化的现象. 基于该现象,高质量的Sr2V2O7外延薄膜被间接合成. 性能表征结果显示半透明金属性的SrVO3与透明绝缘的Sr2V2O7可以实现可逆转换,该现象在可控的电学、光学器件中具有潜在应用价值.  相似文献   

3.
通过V2O5的碳热还原反应制备了具有优异倍率性能和循环稳定性的V2O3-C双层包覆的磷酸铁锂正极材料. 粉末X射线衍射、元素分析、高分辨投射电镜和拉曼光谱研究表明V2O3相与碳层共包覆于磷酸铁锂颗粒表面. 在V2O5的碳热还原反应后,碳含量明显降低,但石墨化程度未发生明显改变. 电化学测试结果表明少量V2O3显著改善了磷酸铁锂正极材料的倍率性能和高温循环性能,包含1%氧化钒的复合正极材料在0.2 C放电容量为167 mAh/g,5 C时放电容量为129 mAh/g,并且循环稳定性优异;在55 oC和1 C时放电容量为151 mAh/g,循环100次后无明显容量衰减.  相似文献   

4.
采用射频磁控溅射和N2气氛退火处理制备了多晶Ga2O3薄膜和Cu掺杂Ga2O3薄膜.用X射线衍射仪、紫外-可见分光光度计、荧光光谱仪对Ga2O3薄膜和Cu掺杂Ga2O3薄膜的结构和光学性能进行了表征.结果表明,Cu掺杂后Ga2O3薄膜的结晶质量变差,透过率明显降低,吸收率增加,光学带隙减小.本征Ga2O3薄膜在紫外、蓝光和绿光出现了发光带,Cu掺杂后紫外和蓝光发射增强,且在475 nm 处出现了一个新的发光峰.  相似文献   

5.
针对稀土Er掺杂Si光源中Er离子掺杂浓度低的问题,采用溶胶-凝胶(Sol-gel)法在Si(100)和SiO2/Si(100)基片上旋涂法制备Er2O3光学薄膜,Er离子浓度与以前掺杂方法相比提高了2个数量级.900 ℃热处理获得单一立方结构的Er2O3薄膜材料.光致发光(PL)特性研究表明在654 nm波长的激光泵浦下,Er2O3薄膜材料获得了1.535 μm的发光峰,并具有较小的温度猝灭1/5.在SiO2/Si(100)基体上制备的Er2O3薄膜材料的光致发光强度比Si(100)基体上制备的薄膜提高2-3倍.研究结果表明具有强光致发光特性的Er2O3薄膜是一种有前景的硅基光源和放大器材料.  相似文献   

6.
赵银女 《光子学报》2014,41(10):1242-1246
β-Ga2O3是一种宽带隙半导体材料,能带宽度Eg≈5.0eV,在光学和光电子学领域有广泛的应用。用射频磁控溅射方法在Si衬底和远紫外光学石英玻璃衬底制备了本征β-Ga2O3薄膜及Zn掺杂β-Ga2O3薄膜,用紫外 可见分光光度计、X射线衍射仪、荧光分光光度计对本征β-Ga2O3薄膜及Zn掺杂β-Ga2O3薄膜的光学透过、光学吸收、结构和光致发光进行了测量,研究了Zn掺杂和热退火对薄膜结构和光学性质的影响。退火后的β-Ga2O3薄膜为多晶结构,与本征β-Ga2O3薄膜相比,Zn掺杂β-Ga2O3薄膜的β-Ga2O3(111)衍射峰强度变小,结晶性变差,衍射峰位从35.69°减小至35.66°。退火后的Zn掺杂β-Ga2O3薄膜的光学带隙变窄,光学透过降低,光学吸收增强,出现了近边吸收,薄膜的紫外、蓝光及绿光发射增强。表明退火后Zn掺杂β-Ga2O3薄膜中的Zn原子被激活充当受主。  相似文献   

7.
通过激光溅射法产生了V2On+ (n=1, 2), V3On+ (n=1, 2, 3)和V4O3+等缺氧的钒氧团簇,并采用532和266 nm波长的激光对它们进行了光解研究. 利用密度泛函理论计算与激光光解实验相结合确定了这些团簇的几何结构和可能的光解通道. 激光光解实验表明V相似文献   

8.
用慢正电子技术研究了在溅射时不加偏压,衬底加热300℃,纯Ar气氛下制备的用Y2O3稳定的ZrO2薄膜材料(简称YSZ薄膜),发现了YSZ薄膜在不同 深度处的缺陷分布情况,退火温度对YSZ薄膜缺陷有影响.简要讨论了致密、优质YSZ薄膜的 制备方法.  相似文献   

9.
氧化物激光薄膜的离子束溅射制备技术   总被引:3,自引:1,他引:2       下载免费PDF全文
 研究了由Ta2O5和SiO2组成的多层氧化物激光薄膜的双离子束溅射制备工艺。简要介绍了离子束溅射技术的基本工作原理和应用,着重分析了薄膜厚度均匀性的调控方法。先后得到了Ta2O5和SiO2单层薄膜厚度均匀性调控结果以及不同波长处薄膜折射率,并定性地分析比较了离子束溅射和电子束蒸发制备的薄膜结构;制备并测试了633nm,1 315nm反射薄膜以及增透膜。结果表明:采用离子束溅射技术能够制备出优良的、满足需要的激光高反射薄膜元件。  相似文献   

10.
连续激光辐照下二氧化钒薄膜热致相变实验研究   总被引:5,自引:1,他引:5       下载免费PDF全文
 介绍了VO2薄膜的相变原理,用磁控离子溅射法制备了VO2薄膜,并进行了X射线衍射和不同温度下的光谱透过率测量。在1.319 μm 连续波激光辐照下,实时测量了VO2薄膜的温度变化,以及由于温度变化引起相变后对激光透过率的变化。结果表明,入射到薄膜表面的平均功率为8.9 W、光斑直径2 mm时,激光出光480 ms后,VO2的温度从室温上升到约100 ℃,薄膜发生了相变,其对1.319 μm激光的透过率从相变前的48%降为相变后的28%。  相似文献   

11.
The formation and optical response of VOx nanoparticles embedded in amorphous aluminium oxide (Al2O3) thin films by pulsed laser deposition is studied. The thin films have been grown by alternate laser ablation of V and Al2O3 targets, which has resulted in a multilayer structure with embedded nanoparticles. The V content has been varied by changing the number of pulses on the V target. It is found that VOx nanoparticles with dimensions around 5 nm have been formed. The structural analysis shows that the vanadium nanoparticles are oxidized, although probably there is not a unique oxide phase for each sample. The films show a different optical response depending on their vanadium content. Optical switching as a function of temperature has been observed for the two films with the highest vanadium content, at transition temperatures of about −20 °C and 315 °C thus suggesting the presence of nanoparticles with compositions V4O7 and V2O5, respectively.  相似文献   

12.
《Current Applied Physics》2015,15(5):622-631
Lithium (Li) (0–5 wt%) doped V2O5 thin films were spray deposited at 450 °C onto ITO substrates. Structural analysis using X-ray diffraction and Raman spectroscopy revealed orthorhombic phase of the films. In addition to the V2O5 phase, presence of VO2 peaks due to high deposition temperature is also evident from structural and optical characterization. The non-stoichiometric nature of the films due to loss of the terminal O atom was confirmed from Raman spectroscopy. The direct band gap, indirect bandgap, and phonon energies were also calculated from optical studies. Different charge states of vanadium ions present in the film were identified from X-ray photoelectron spectroscopy study. Results from cyclic voltammetry experiments reflected significant differences between the undoped and Li doped V2O5 samples. Transport properties by Hall-effect measured at room temperature indicated significant increase in conductivity, carrier concentration and mobility of V2O5 thin films on doping with Li. A Dye Sensitized Solar Cell (DSSC) was fabricated using mobility enhanced 5 wt% Li doped V2O5 film as photoanode and its efficiency was found to be 2.7%. A simple electrochromic cell is fabricated using undoped V2O5 thin film to demonstrate the colour change.  相似文献   

13.
高旺  胡明  后顺保  吕志军  武斌 《物理学报》2013,62(1):18104-018104
采用磁控溅射法在单晶Si〈100〉基底上沉积金属钒(V)薄膜,在高纯氧环境下快速热处理制备具有相变特性的氧化钒(VOx)薄膜.利用X射线衍射仪、X射线光电子能谱和扫描电子显微镜对薄膜结晶结构、薄膜中V的价态与组分及表面微观形貌进行分析,应用四探针测试方法和太赫兹时域频谱技术对样品的电学和光学特性进行测试.结果表明:在一定范围的快速热处理保温温度和保温时间下,都可以制备出具有热致相变特性的氧化钒薄膜,相变前后薄膜的方块电阻变化超过两个数量级,薄膜成分主要由V2O5和VO2混合组成,薄膜中V整体价态不因热处理条件改变而不同.在快速热处理条件范围内,500℃ 25 s左右条件下(中温区)制备出的氧化钒薄膜相变特性最佳,并且对THz波有一定的调制作用.  相似文献   

14.
韦晓莹  胡明  张楷亮*  王芳  刘凯 《物理学报》2013,62(4):47201-047201
采用射频反应溅射法于室温下在Cu/Ti/SiO2/Si基底上制备了氧化钒薄膜. X-射线衍射、X射线光电子能谱分析仪及原子力显微镜结果表明, 室温下制备的氧化钒薄膜除微弱的V2O5 (101)和V2O3 (110)峰外, 没有明显的结晶取向, 是VO2, V2O5, V2O3及VO的混合相薄膜, 且薄膜表面颗粒大小均匀, 表面均方根粗糙度约为1 nm. 采用半导体参数分析仪对薄膜的电开关特性进行测试. 结果表明薄膜具有较低的开关电压(VSet<1 V, VReset<-0.5 V), 并且具有稳定的可逆开关特性. 薄膜从低阻态转变为高阻态的电流(IReset)随限流的增大而增大.通过高低阻态时I-V对数曲线的拟合(高阻态斜率>1, 低阻态斜率=1), 认为Cu离子在薄膜中扩散形成的导电细丝是该体系发生电阻转变的主要机制. 关键词: 氧化钒薄膜 电阻开关 电阻式非挥发存储器 导电细丝  相似文献   

15.
N. Alov  D. Kutsko  Z. Bastl 《Surface science》2006,600(8):1628-1631
Oxidation of vanadium metal surfaces at room temperature by low-energy oxygen ion beams is investigated by X-ray photoelectron spectroscopy (XPS). It is observed that ion-beam irradiation of clean V results in formation of thin oxide layer containing vanadium in oxidation states corresponding to VO, V2O3, VO2 and V2O5 oxides. The composition of the products of ion-beam oxidation depends markedly on oxygen ion fluence. The results of angle-resolved XPS measurements are consistent with a structure of oxide film with the outermost part enriched in V2O5 and VO2 oxides and with V2O3 and VO oxides located in the inner region of the oxide layer.  相似文献   

16.
Vanadium oxide thin films were grown by RF magnetron sputtering from a V2O5 target at room temperature, an alternative route of production of vanadium oxide thin films for infrared detector applications. The films were deposited on glass substrates, in an argon–oxygen atmosphere with an oxygen partial pressure from nominal 0% to 20% of the total pressure.X-ray diffraction (XRD) and X-ray photon spectroscopy (XPS) analyses showed that the films were a mixture of several vanadium oxides (V2O5, VO2, V5O9 and V2O3), which resulted in different colors, from yellow to black, depending on composition. The electrical resistivity varied from 1  cm to more than 500 Ω cm and the thermal coefficient of resistance (TCR), varied from −0.02 to −2.51% K−1.Computational thermodynamics was used to simulate the phase diagram of the vanadium–oxygen system. Even if plasma processes are far from equilibrium, this diagram provides the range of oxygen pressures that lead to the growth of different vanadium oxide phases. These conditions were used in the present work.  相似文献   

17.
We report the formation of homogeneous and stable V2O3 nanocrystals, directly from V2O5 thin films, at 600 °C, as observed by using in situ electron microscopy experiments. Thermally-induced reduction of V2O5 thin films in vacuum is remarkably different when compared to reduction of V2O5 single crystals and results in the formation of nanophase V2O3. Thermally grown V2O3 nanocrystals exhibit hexagon or square shape and are stable at higher temperature as well as room temperature. The formation of stable nanocrystals through the reduction process in a non-chemical environment (vacuum) could provide a basis for understanding the complex processes of vanadium oxide phase transitions and for controlling the chemical processes to produce oxide nanocrystals.  相似文献   

18.
We report for the first time the use of lithiated crystalline V2O5 thin films as positive electrode in all-solid-state microbatteries. Crystalline LixV2O5 films (x ≈ 0.8 and 1.5) are obtained by vacuum evaporation of metallic lithium deposited on sputtered c-V2O5. An all-solid-state lithium microbattery of Li1.5V2O5/LiPON/Li exhibited a typical reversible capacity of 50 μAh/cm2 in the potential range 3.8/2.15 V which exceeds by far the results known on all-solid-state lithium batteries using amorphous V2O5 films and lithiated amorphous LixV2O5 thin films as positive electrode. Hence, the present work opens the possibility of using high performance crystalline lithiated V2O5 thin films in rocking-chair solid-state microbatteries.  相似文献   

19.
The optimal mode for the application of a nanoscale layer of vanadium-pentoxide gel on the surface of indium phosphide by centrifugation is determined via spectroscopic ellipsometry and atomic-force microscopy. By oxidizing the formed V x Oy—InP heterostructures, films are obtained with a grain structure, with the height of the relief not exceeding 70 nm. The presence of incompletely oxidized chemostimulator components (VO2, V2O3) in the films and the presence of InVO4, which binds the V2O5 chemostimulator and thereby blocks the regeneration cycle of V+5 ? V+4, suggest implementation of the transit mechanism of the chemostimulated oxidation of indium phosphide. The data of spectroscopic ellipsometry indicate incomplete kinetic blocking of the diffusion of indium into the films upon oxidation.  相似文献   

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