选择性发射极晶体硅太阳电池的二维器件模拟及性能优化

利用PC2D二维模拟软件对选择性发射极晶体硅太阳电池(SE电池)进行了器件模拟和参数优化的研究.在对丝网印刷磷浆法制备的SE电池的实测典型电流-电压曲线实现完美拟合的基础上,全面系统地研究了栅线、基区、选择性发射区和背表面场层等的参数对电池性能的影响.模拟表明:基区少子寿命、前表面复合速度和背表面复合速度是对电池效率影响幅度最大的三个参数.在所研究的参数范围内,当基区少子寿命从50μs上升到600μs时,电池效率从18.53%上升到19.27%.低的前表面复合速度是使发射区方块电阻配比优化有意义的前提.要取得理想的电池效率,背表面复合速度需控制在500 cm/s以下.此外,对于不同的前表面复合速度,电池效率的最大值总是在50—90Ω/□的重掺区方阻、110—180Ω/□的轻掺区方阻的范围内取得.对不同的栅线数目,重掺区宽度与栅线间距之比为32%时,电池的效率最高.另外,在主栅结构保持较低面积比率的前提下,主栅数目的增加也可提高效率.最后,通过优化p型SE电池的效率可达到20.45%.     

一维铝背栅单晶硅薄膜太阳能电池光吸收分析

分别以铝、银、硅为一维背栅设计了三种单晶硅结构的薄膜太阳能电池.利用时域有限差分法,在入射光为300nm~1100nm的波长段,计算了三种背栅材料的单晶硅薄膜太阳能电池单晶硅层的光吸收效率;利用计算所得到的磁场强度分布特点,分析了600nm以上波长段光吸收增强的机理.定义了归一化光吸收密度的概念,以定量衡量给定波段的光吸收效率.通过比较三种太阳能电池的归一化光吸收密度和短路电流密度,发现铝背栅比硅背栅和银背栅能更加有效地提高单晶硅薄膜太阳能电池的全波段光吸收效率.     

透射光栅衍射效率研究

透射光栅广泛应用于 X光能谱测量 ,为获得定量的 X光能谱 ,首先在北京同步辐射源上对透射光栅的衍射效率在多个入射 X光能量点进行了实验标定 ,获得了透射光栅衍射效率的实验结果。为模拟透射光栅衍射效率实验标定结果 ,发展了一个新的透射光栅衍射效率计算模型 ,该模型不同于国外已发展的矩形栅线模型和梯形栅线截面模型 ,而是假设透射光栅栅线具有准梯形截面。模型计算结果与实验标定结果符合很好。     

铜铟镓硒薄膜太阳能电池新型图形化透明前电极研究

为了优化铜铟镓硒薄膜太阳能电池的前电极,提高铜铟镓硒薄膜太阳能电池的效率,提出了一种可应用于铜铟镓硒薄膜太阳能电池的AZO/图案化Ag薄膜/AZO结构的前电极,中间层的Ag薄膜与电池顶层的金属栅线具有完全相同的图案和尺寸,并且位于金属栅线的正下方,这种新型结构可以提高电池前电极的电学性能,但对电池来说不会带来额外的光学损失。对比了新型前电极结构与几种传统前电极的电学和光学性能,并且制备了相应的电池进行了性能对比。实验结果表明,新型的前电极结构可以提高铜铟镓硒薄膜太阳能电池的短路电流,相对传统AZO电极,电池效率从13. 83%提高到14. 53%。本结构可以明显提高电池效率。     

减反膜对单晶硅太阳能电池性能的影响分析

在太阳能电池效率的评价中，电池材料、掺杂浓度、扩散长度等都是比较重要的参数，合理地改变相关参数可以优化太阳能电池的性能，提高电池效率。此外，在太阳能电池表面镀一层具有减反作用的光学薄膜（简称减反膜）也是提高电池效率的重要手段。以提高电池效率为目标，对单晶硅太阳能电池的掺杂浓度和扩散长度等微观参数进行计算优化，分析了掺杂浓度和扩散长度变化对电池效率的影响。并在此基础上分析了不同类型的减反膜对于电池效率的影响，给出了最佳减反膜材料及其膜系厚度，并且结合镀膜后电池量子效率的变化验证了其准确性。结果表明，在优化电池掺杂浓度和扩散长度的基础上，选择合适的减反膜，电池效率最高可达20.35%，相比于优化前提高了8.25%。     

高膨胀比有机工质向心透平气动优化研究

本文采用NURBS曲线参数化表达和控制几何型线,结合CFD数值实验,对膨胀比为8的有机工质向心透平进行气动优化研究。跨声速喷嘴叶型型线经气动优化后,喷嘴内处于顺压梯度的加速流动状态,喉部跨声速膨胀流动得到改善,流场最大Ma降低,全工况下的叶栅总压损失系数显著减小,跨声速工况下的级组效率明显提高。叶轮子午流道型线经优化后,流道宽度变化更均匀平滑,原动叶轮吸力面分离被消除,透平级组效率也有提高。     

基于Pareto类遗传算法的平面叶栅多工况优化

将叶型参数化、试验设计方法、神经网络算法与Pareto类遗传算法相结合,发展了一种平面叶栅多目标优化设计方法.在该算法中,为提高优化效率,提出了并行神经网络算法和改进了NSGA-Ⅱ算法.以极小化三个工况点的总压损失系数为目标函数,将该优化方法应用于某平面叶栅多工况优化设计.与初始叶栅相比,优化后叶栅的总压损失系数在三个工况均有一定的减小,说明该优化方法是有效的.     

离子推力器栅极透过率径向分布特性研究

栅极系统是离子推力器的主要组件,其透过率特性对推力器的效率和推力具有重要影响.为了进一步优化栅极性能和有效评估离子推力器效率,对离子推力器栅极透过率径向分布进行研究.采用particle-In-CellMonte Carlo Collision数值仿真方法对束流引出过程进行了模拟.分析了屏栅、加速栅以及栅极系统的透过率随栅孔引出束流离子数量的变化关系,结合放电室出口离子密度分布,进而分别得到屏栅透过率、加速栅透过率和栅极系统透过率的径向分布特性,最后进行实验验证.研究结果表明:屏栅透过率径向分布具有中心对称性,在推力器中心有最小值,从中心沿着径向逐渐增大;加速栅透过率径向分布与屏栅透过率变化趋势相反;栅极系统透过率受加速栅透过率的影响很小,其径向分布与屏栅透过率径向分布相近;离子推力器栅极总透过率随着束流增大而缓慢减小.研究结果可为离子推力器栅极优化提供参考.     

一种宽带瓦量级交错双栅脊波导返波振荡器的研究

为满足太赫兹领域对大功率、宽带宽的太赫兹辐射源的需求,提出了一种新型交错双栅脊波导（RDSG）慢波结构。设计并优化了交错双栅脊波导返波振荡器的高频结构,同时对交错双栅脊波导和常规交错双栅的高频特性进行了仿真和对比,结果表明：当二者相速度接近时,交错双栅脊波导拥有更宽的“冷”通带带宽和更高的耦合阻抗。PIC仿真结果表明,在1 THz频段,交错双栅脊波导返波振荡器拥有超过175 GHz的可调谐带宽以及1.1 W的输出功率,比相同工作条件下的常规交错双栅结构输出功率了提高34%～42%。     

非晶硅/微晶硅叠层太阳电池中间层的研究

叠层结构是提高硅基薄膜太阳电池效率和稳定性的有效方法,其中子电池的电流匹配是提高叠层电池效率的关键,而中间层技术能有效地改善子电池电流的匹配情况。介绍了非晶硅/微晶硅叠层电池的中间反射层和隧道结的结构、特性及材料种类,结合两者的理论基础提出隧穿反射层的概念,分析其工作原理并给出了薄膜材料的选择原则和范围。隧穿反射层在叠层结构中不仅起到常规中间反射层的作用,解决电池内部的陷光问题,还可优化叠层太阳电池的隧道结,解决子电池对光生载流子的有效收集问题。     

Emitter of hetero-junction solar cells created using pulsed rapid thermal annealing

In this paper, we use a pulsed rapid thermal processing (RTP) approach to create an emitter layer of hetero-junction solar cell. The process parameters and crystallization behaviour are studied. The structural, optical and electric properties of the crystallized films are also investigated. Both the depth of PN junction and the conductivity of the emitter layer increase with the number of RTP pulses increasing. Simulation results show that efficiencies of such solar cells can exceed 15% with a lower interface recombination rate, but the highest efficiency is 11.65% in our experiments.     

钙钛矿/硅叠层太阳电池中平面a-Si:H/c-Si异质结底电池的钝化优化及性能提高

最近,旋涂法制备的钙钛矿/平面硅异质结高效叠层太阳电池引起人们广泛关注,主要原因是相比于绒面硅衬底制备的钙钛矿/硅叠层太阳电池,其制备工艺简单、制备成本低且效率高.对于平面a-Si:H/c-Si异质结电池, a-Si:H/c-Si界面的良好钝化是获得高转换效率的关键,进而决定了钙钛矿/硅异质结叠层太阳电池的性能.本文主要从硅片表面处理、a-Si:H钝化层和P型发射极等方面展开研究,通过对硅片表面的氢氟酸(HF)浸泡时间和氢等离子体预处理气体流量、a-Si:H钝化层沉积参数、钝化层与P型发射极(I/P)界面富氢等离子体处理的综合调控,获得了相应的优化工艺参数.对比研究了p-a-Si:H和p-nc-Si:H两种缓冲层材料对I/P界面的影响,其中高电导、宽带隙的p-nc-Si:H缓冲层既能够降低I/P界面的缺陷态,又可以增强P型发射层的暗电导率,提高了前表面场效应钝化效果.通过上述优化,制备出最佳的P-type emitter layer/aSi:H(i)/c-Si/a-Si:H(i)/N-type layer (inip)结构样品的少子寿命与implied-Voc分别达到2855μs和709 mV,表现出良好的钝化效果.应用于平面a-Si:H/c-Si异质结太阳电池,转换效率达到18.76%,其中开路电压达到681.5 mV,相对于未优化的电池提升了34.3 mV.将上述平面a-Si:H/c-Si异质结太阳电池作为底电池,对应的钙钛矿/硅异质结叠层太阳电池的开路电压达到1780 mV,转换效率达到21.24%,证明了上述工艺优化能够有效地改善叠层太阳电池中的硅异质结底电池的钝化及电池性能.     

Characteristics of silicon solar cell emitter with a reduced diffused phosphorus inactive layer

The diffusion of phosphorus using a phosphorous oxychloride (POCl₃) source in silicon has been used widely in crystalline silicon solar cells. The thermal diffusion process in the furnace consists of two steps: pre-deposition and drive-in. The phosphorous doping profile via thermal diffusion often exhibits high concentrations in the surface-near emitter, which result in a recombination increase. This layer, called the dead layer, should be inhibited in order to fabricate high efficiency silicon solar cells. In this paper, the amount of the POCl₃ flow rate was varied during the pre-deposition process in order to minimize the dead layer, and the characteristics of the phosphosilicate glass (PSG) and emitter were analyzed. From the secondary ion mass spectroscopy (SIMS) and electrochemical capacitance–voltage profiler (ECV) measurements, the emitter formed using a POCl₃ flow rate of 1000 sccm contained the least amount of inactive dopant and resulted in reasonable performance in the silicon solar cell. As the POCl₃ flow rate increased, the doped silicon wafer included electrically inactive P near the surface, which functions as a defect degrading the electrical performance of the emitter. As a result of this, the removal of the dead layer containing the inactive P was attempted through dipping the doped wafer in a HF solution. After this process, the emitter saturation current density and implied V_oc were improved. The completed solar cells and their external quantum efficiencies at a short wavelength also demonstrated improved performance. A quantitative analysis of the emitter can provide a deeper understanding of methods to improve the electrical characteristics of the silicon solar cell.     

Buried emitter solar cell structures: Decoupling of metallisation geometry and carrier collection geometry of back contacted solar cells

We present a novel solar cell structure, the “buried emitter solar cell”. This concept is designed for decoupling the metallisation geometry from the geometry of the carrier collecting p–n junction in back‐contacted (and in particular back‐junction) solar cells without requiring electrical insulation by dielectric layers. The most prominent features of this device structure are a carrier collecting emitter that covers close to 100% of the total cell area and an effective electrical insulation between emitter and base metallisation via a p⁺–n⁺ junction. The experimental results presented in this paper report a 19.5% efficient “buried emitter solar cell”, where 50% of the solar cell's rear side exhibit a p⁺–n⁺ junction. This preparation technique implies covering a boron‐doped p‐type emitter with an n‐type surface layer that can be efficiently surface‐passivated by thermal oxidation. All structuring of this cell has been performed by laser processing without any photo‐lithography. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

n‐type silicon solar cells with surface‐passivated screen‐printed aluminium‐alloyed rear emitter

Aluminium‐doped p‐type (Al‐p⁺) silicon emitters fabricated by means of a simple screen‐printing process are effectively passivated by plasma‐enhanced chemical‐vapour deposited amorphous silicon (a‐Si). We measure an emitter saturation current density of only 246 fA/cm², which is the lowest value achieved so far for a simple screen‐printed Al‐p⁺ emitter on silicon. In order to demonstrate the applicability of this easy‐to‐fabricate p⁺ emitter to high‐efficiency silicon solar cells, we implement our passivated p⁺ emitter into an n⁺np⁺ solar cell structure. An independently confirmed conversion efficiency of 19.7% is achieved using n‐type phosphorus‐doped Czochralski‐grown silicon as bulk material, clearly demonstrating the high‐efficiency potential of the newly developed a‐Si passivated Al‐p⁺ emitter. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell

A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot-wire chemical vapour deposition. The effect of the doping concentration of emitter layer S_d (S_d=PH₃/(PH₃+SiH₄+H₂)) on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with S_d increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at S_d = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm², a fill factor of 63.3%, and a conversion efficiency of 7.9%.     

Direct laser printing for high efficiency silicon solar cells fabrication

Silicon solar cells still require cost reduction and improved efficiency to become more competitive. New architectures can provide a significant increase in efficiency, but today most of the approaches need additional fabrication steps. In this context, laser processing offers a unique way to replace technological steps like photolithography that is not compatible with the requirements of the photovoltaic industry. In particular laser induced thermal effects can be used to activate or re-organise dopants at the silicon surface to design new emitter geometries. In this paper dopant diffusion using a nanosecond UV laser on phosphorous-doped silicon emitters is studied. The presence of a phosphosilicate glass underneath a silicon nitride layer leads to a local decrease of the emitter sheet resistance from 100 Ω/sq to 20 Ω/sq. Laser induced damage, phosphorus diffusion profile and electrical shunt are assessed in the perspective of selective emitter silicon solar cells fabrication compatible with electrochemical metal contacts deposition.     

Efficient implementation of multiple drive-in steps in thermal diffusion of phosphorus for PERC solar cells

N-type phosphorus diffusion in silicon using phosphorus oxychloride, POCl₃, has been widely used in the production of p-type silicon solar cells. The thermal diffusion process in a furnace generally involves two steps: pre-deposition and drive-in. The phosphorous doping by thermal diffusion often shows high surface concentrations, leading to an increase in charge recombination, which should be inhibited in order to fabricate high efficiency silicon solar cells. In this study, we investigate the influence of 3 drive-in steps at sequentially increasing temperatures during the POCl₃ diffusion on the emitter performance. As a result, it was found that the kink region was made shorter while maintaining surface concentration for a good metal contact without losing its passivation quality. This result is attributed to the higher active dopant concentration of the 3 drive-in step samples, leading to a lower series resistance and higher fill factor in the PERC solar cells. The results show that slight changes in the PSG process conditions can contribute to the improvement of high efficiency solar cells.     

Crystalline silicon solar cells with high resistivity emitter

The paper presents a part of research targeted at the modification of crystalline silicon solar cell production using screen-printing technology. The proposed process is based on diffusion from POCl₃ resulting in emitter with a sheet resistance on the level of 70 Ω/□ and then, shaped by high temperature passivation treatment. The study was focused on a shallow emitter of high resistivity and on its influence on output electrical parameters of a solar cell. Secondary ion mass spectrometry (SIMS) has been employed for appropriate distinguishing the total donor doped profile. The solar cell parameters were characterized by current-voltage characteristics and spectral response (SR) methods. Some aspects playing a role in suitable manufacturing process were discussed. The situation in a photovoltaic industry with emphasis on silicon supply and current prices of solar cells, modules and photovoltaic (PV) systems are described. The economic and quantitative estimation of the PV world market is shortly discussed.