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1.
High-quality indium-tin-oxide (ITO) films are deposited on p-type Czochralski silicon and 7059 Coming glass by direct-current magnetron sputtering at various temperatures. The structural, electrical and optical properties of the ITO films are investigated as functions of the substrate temperature. A comparison between the characteristics of the ITO films on silicon and Coming glass is presented. The results show that for the ITO film on silicon,the nucleation begins from room temperature; the resistivity reaches a maximum value at 75℃; the reflectivity increases with increasing temperature; when temperature is above 125℃, the ITO grows in a three-dimensional manner and forms a granular structure. However, for the ITO film on glass, it is still in an amorphous state at 75℃. Moreover, both the resistivity and the reflectivity decrease with increasing temperature. Above 125℃, the ITO grows in a two-dimensional manner and forms a domain structure.  相似文献   

2.
Indium tin oxide (ITO) films were prepared by rf magnetron sputtering under two conditions: (i) at substrate temperature Ts from room temperature (RT) to 350℃ (ii) with additional post-annealing in vacuum at 400℃ for 30 min in comparison of their crystalline structures, and electrical-optical properties of the films deposited. From the experimental results, it is found that, under the first condition, the crystalline structures and the electrical-optical properties of the films are improved with the increasing Ts. Under the other condition, i.e. with the additional post-annealing, the films exhibit higher degree of crystallinities and better electrical-optical properties. Under the two deposition conditions, inter-relation between electrical-optical properties and the crystalline structure is observed clearly. However, even under the same annealing condition, it is observed that improved properties of the films are different, depending on their deposition temperatures, which implies that an initial stage of the ITO film before annealing is an important factor for the film's properties improved after annealing. The resistivity of 2.33 × 10-4 Ω·cm can be achieved at Ts of 350℃after annealing.  相似文献   

3.
Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 molar contents (0, 3, 7, and 12 mol%) are deposited on BK7 substrates by electron-beam evaporation technique. The effects of different Y2O3 contents on residual stresses and structures of YSZ thin films are studied. Residual stresses are investigated by means of two different techniques: the curvature measurement and x-ray diffraction method. It is found that the evolution of residual stresses of YSZ thin films by the two different methods is consistent. Residual stresses of films transform from compressive stress into tensile stress and the tensile stress increases monotonically with the increase of Y2O3 content. At the same time, the structures of these films change from the mixture of amorphous and monoclinic phases into high temperature cubic phase. The variations of residual stress correspond to the evolution of structures induced by adding of Y2O3 content.  相似文献   

4.
Copper(Cu)-doped ZrO_2(CZO) films with different Cu content(0 at.%~ 8.07 at.%) are successfully deposited on Si(100) substrates by direct current(DC) and radio frequency(RF) magnetron co-sputtering. The influences of Cu content on structural, morphological, optical and electrical properties of CZO films are discussed in detail. The CZO films exhibit ZrO_2 monocline(ˉ111) preferred orientation, which indicates that Cu atoms are doped in ZrO_2 host lattice. The crystallite size estimated form x-ray diffraction(XRD) increases by Cu doping, which accords with the result observed from the scanning electron microscope(SEM). The electrical resistivity decreases from 2.63 ?.cm to 1.48 ?·cm with Cu doping content increasing, which indicates that the conductivity of CZO film is improved. However, the visible light transmittances decrease slightly by Cu doping and the optical band gap values decrease from 4.64 eV to 4.48 eV for CZO films.  相似文献   

5.
The effects of annealing temperature on the structural and optical properties of ZnO films grown on Si (100) substrates by sol-gel spin-coating are investigated. The structural and optical properties are characterized by x-ray diffraction, scanning electron microscopy and photoluminescence spectra. X-ray diffraction analysis shows the crystal quality of ZnO films becomes better after annealing at high temperature. The grain size increases with the temperature increasing. It is found that the tensile stress in the plane of ZnO films first increases and then decreases with the annealing temperature increasing, reaching the maximum value of 1.8 GPa at 700℃. PL spectra of ZnO films annealed at various temperatures consists of a near band edge emission around 380 nm and visible emissions due to the electronic defects, which are related to deep level emissions, such as oxide antisite (OZn), interstitial oxygen (Oi), interstitial zinc (Zni) and zinc vacancy (VZn^-), which are generated during annealing process. The evolution of defects is analyzed by PL spectra based on the energy of the electronic transitions.  相似文献   

6.
The repeatable bipolar resistive switching phenomenon is observed in amorphous Al2O3 prepared by metalorganic chemical vapor deposition on ITO glass, with ITO as the bottom electrode and Ag as the top electrode. The crystal structure, morphology, composition and optical properties of Al2O3 thin films are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and ultraviolet-visible-infrared spectroscopy, respectively. The electronic character of Ag/Al2O3/ITO structure is tested by an Agilent B1500A. The device shows a typical bipolar resistive switching behavior under the dc voltage sweep mode at room temperature. The variation ratio between HRS and LRS is larger than nearly three orders of magnitude, which indicates the good potential of this structure in future resistive random access memory (ReRAM) applications. Based on the conductive filament model, the high electric field is considered the main reason for the resistive switching according to our measurements.  相似文献   

7.
Transparent conductive Al-doped ZnO (AZO) thin films are prepared on normal glass substrates by the sol-gel spin coating method. The effects of drying conditions, annealing temperature and cooling rate on the structural, electrical and optical properties of AZO films are investigated by x-ray diffraction, scanning electron microscopy, the four-point probe method and UV-VIS spectrophotometry, respectively. The deposited films show a hexagonal wurtzite structure and high preferential c-axis orientation. As the drying temperature increases from 100℃ to 300℃ the resistivity of AZO films decreases dramatically. In contrast to the annealed films cooled in a furnace and in air, the resistivity of the annealed film which is cooled at -15℃is greatly reduced. Increasing the cooling rate dramatically increases the electrical conductivity of AZO films.  相似文献   

8.
We report on the optical properties of ZnFe2O4-SiO2 granular films prepared on quartz substrates by the radio-frequency magnetron sputtering method.Post-annealing was performed at different temperatures under flow oxygen atmosphere.The morphology and Structures of ZnFe2O4 nanoparticles were characterized by x-ray different line types in the optical absorption curves of ZnFe2O4-SiO2 granular films.The critical transition of line types occurs when ZnFe2O4 changes from amorphous to crystalline,and the transition temperature increases with the increasing content of ZnFe2O4.There is an obvious blueshift of the optical absorption edge of the granular films with the decreasing annealing temperature.  相似文献   

9.
ZnO thin films have been grown on C-plane sapphire substrates by plasma-enhanced metal-organic chemical vapour deposition.The samples are then annealed at a higher temperature.The resistivity,concentration of electron,mobility and optically pumped threshold of both as-grown and annealed films are investigated.Furthermore,their structural and optical properties are also examined with x-ray diffraction,emission spectra and optical transmission spectra.The results indicate that the quality of ZnO thin films can be improved by annealing.  相似文献   

10.
Indium-tin-oxide (ITO) films deposited on crystalline silicon wafer and Corning glass are prepared by directcurrent magnetron sputtering method at room temperature with various thicknesses. The thickness dependences of structure, resistance and optical refectance of ITO films are characterized. The results show that when the film thickness is less than 40 nm, the resistivity and optical reflectance of the ITO film changes remarkably with thickness. The optoelectrical properties trend to stabilize when the thickness is over 55 nm. The GXRD result implies that the ITO film begins to crystallize if only the thickness is large enough.  相似文献   

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