阻挡层电容对ACu3Ti4O12巨介电性能的影响研究

用固相反应法成功地制备了ACu3Ti4O12(A=Ca,La,Y)系列陶瓷,在50-300K温区内测量了样品的介电性能,分析了交流电导与外场频率、温度的关系.发现在相同组分的CaCu3Ti4O12晶体中相对含量大于等于0.776时,样品的相对介电常数可达104;而A位上价态为3+的化合物La2/3Cu3Ti4O12和Y2/3Cu3Ti4O12相对介电常数仅为103.分析表明,样品中内部阻挡层电容数目的多少直接对ACu3Ti4O12的相对介电常数产生影响.电导与温度及频率的关系是由电子、声子与外场的共同作用决定的.     

磁控溅射法制备的CaCu3Ti4O12薄膜

采用溅射方法成功地制备了CaCu3₃Ti4₄O12₁₂薄膜， 用原子力显微镜、x射线衍射（XRD）仪和LCR分析仪对样品进行形貌、物相结构和介电性质的研究.XRD表明，薄膜比块体的晶 格常数小但晶格畸变较大；LCR测量结果显示，在相同温度下薄膜比块体的相对介电常数低 ，薄膜相对介电常数由低到高转变时对应的温度较高且激活能较大.分析表明：薄膜的相对 介电常数较低是样品中晶相含量较低、缺陷较多使内部阻挡层电容大量减小、致密度不高引 起的；薄膜中 关键词： 磁控溅射 3Ti4₄O12₁₂')" href="#">CaCu3₃Ti4₄O12₁₂ 介电常 数 激活能     

添加Nb对CaCu3Ti4O12陶瓷介电性能的影响

采用固相反应法制备了CaCu₃Ti_4-xNb_xO₁₂(x=0，0.01，0.04，0.08，0.2)陶瓷，样品在x取值范围内形成了连续固溶体.在40Hz—110MHz频率范围对样品进行了介电频谱分析，实验结果表明，与纯CaCu₃Ti₄O₁₂不同，含Nb试样除了在频率大于10kHz范围内出现的德拜弛豫 关键词： 巨介电常数 德拜弛豫 阻挡层电容 等效电路     

(Na1/2Bi1/2)Cu3Ti4O12陶瓷的微观结构和电学性质

利用固相反应法在不同烧结温度条件下制备了一系列(Na_1/2Bi_1/2)Cu₃Ti₄O₁₂(NBCTO)陶瓷样品,研究了它们的晶体结构、微观组织结构、介电性质和复阻抗及其随温度的变化. 实验发现NBCTO陶瓷所呈现出的电学性质与CaCu₃Ti₄O₁₂陶瓷相应的电学性质非常类似. 烧结温度为990℃至1060℃范围的NBCTO陶瓷样品室 关键词： 高介电材料 介电性质 复阻抗 内阻挡层电容     

Ca3NbGa3Si2O14晶体的介电和压电特性

利用Y切和(yxl)30°切两种样品测量了Ca3NbGa3Si2O14晶体的介电、压 电和部分弹性参数.计算了(yxl)θ切型相关压电常数随切角的变化.与La3Ga5SiO14晶体相比，Ca3NbGa3Si2O14晶体具有更优良的压电性能，其压电常数 d11=7.93×10-12C/N，d14=-5.88×10-12C/N. 关键词： Ca3NbGa3Si2O14晶体 介电常数 压电常数     

磁控溅射法制备的CaCu3Ti4O12薄膜

采用溅射方法成功地制备了CaCu3Ti4O12薄膜,用原子力显微镜、x射线衍射(XRD)仪和LCR分析仪对样品进行形貌、物相结构和介电性质的研究.XRD表明,薄膜比块体的晶格常数小但晶格畸变较大;LCR测量结果显示,在相同温度下薄膜比块体的相对介电常数低,薄膜相对介电常数由低到高转变时对应的温度较高且激活能较大.分析表明:薄膜的相对介电常数较低是样品中晶相含量较低、缺陷较多使内部阻挡层电容大量减小、致密度不高引起的;薄膜中激活能的增大由膜和基底间晶格的不匹配造成膜中的内应力增大、微结构、缺陷和畴等因素决定;介电常数在低频时的急剧增大,意味着存在界面极化,它与界面的缺陷、悬挂键有关.     

添加Nb对CaCu3Ti4O12陶瓷介电性能的影响

采用固相反应法制备了CaCu3Ti4-xNbxO12(x=0,0.01,0.04,0.08,0.2)陶瓷,样品在x取值范围内形成了连续固溶体.在40 Hz-110 MHz频率范围对样品进行了介电频谱分析,实验结果表明,与纯CaCu3Ti4O12不同,含Nb试样除了在频率大于10 kHz范围内出现的德拜弛豫行为外,室温下在40 Hz-10 kHz低频率范围内还存在一个新的德拜弛豫峰,低于该弛豫特征频率时介电常数达106以上,该峰的特征频率随着Nb含量的增大向高频方向移动.根据阻抗谱中观察到的三个半圆弧,采用阻挡层电容模型,利用含有三个RC的等效电路对上述实验现象作了合理解释.     

CaCu3Ti4O12块材和薄膜的巨介电常数

用固相反应法和脉冲激光沉积 (PLD)制备了CaCu3Ti4O1 2 块材和薄膜 ,获得了相对介电常数ε′( 1kHz ,3 0 0K)高于140 0 0的介电特性 ,是目前该体系最好的结果 .报道了 ( 0 0l)取向高质量CaCu3Ti4O1 2 外延薄膜及其介电性质 .CaCu3Ti4O1 2 相对介电常数ε′在 10 0— 3 0 0K温度范围内基本保持恒定 ,稳定性好 .基于跳跃电导模型 ,对CaCu3Ti4O1 2薄膜介电电导的频率依赖关系作了合理解释     

Fe掺杂CaCu3Ti4O12陶瓷的介电性能与弛豫特性研究

采用固相反应法制备了CaCu₃Ti_4-xFe_xO₁₂(0≤x≤0.2)陶瓷,通过X射线衍射、扫描电子显微镜、介电频谱和阻抗谱等手段研究了Fe对CaCu₃Ti₄O₁₂陶瓷的结构和介电性能的影响.研究发现：CaCu₃Ti_4-xFe_{x关键词： 巨介电常数 双阻挡层电容模型 界面极化}     

Si基Bi3.25La0.75Ti3O12铁电薄膜的制备与特性研究

采用Sol-Gel工艺低温制备了Si基Bi3.25La0.75Ti3O12铁电薄膜.研究了退火温度对薄膜微观结构、介电特性与铁电性能的影响.500℃退火处理的Bi3.25La0.75Ti3O12薄膜未能充分晶化,晶粒细小且有非晶团聚,介电与铁电性能均较差.高于550℃退火处理的Bi3.25La0.75Ti3O12薄膜表面平整无裂纹,晶粒均匀,无焦碌石相或其他杂相,薄膜为多晶生长,具有较好的介电与铁电性能,4V电压下的漏电流密度低于2×10-8A/cm2.随退火温度升高,晶化程度的提升和晶粒尺寸的增大使薄膜的剩余极化增大而矫顽电场降低.600℃退火处理的Bi3.25La0.75Ti3O12薄膜显示了优于Bi4Ti3O12薄膜的铁电性能,其剩余极化Pr和矫顽电场Ec分别达到17.5μC/cm2和102kV/cm.     

CaCu3Ti4O12 陶瓷松弛损耗机理研究

CaCu₃Ti₄O₁₂介电损耗较大且损耗机理尚不明确, 因此限制了其应用.本文采用固相法和共沉淀法合成CaCu₃Ti₄O₁₂陶瓷, 利用宽带介电温谱研究在交流小信号作用下, 双Schottky势垒耗尽层边缘深陷阱的电子松弛过程、 载流子松弛过程以及CaCu₃Ti₄O₁₂陶瓷的介电损耗性能. 研究发现, 在低频下以跳跃电导和直流电导的响应为主, 而高频下主要为深陷阱能级的松弛过程所致, 特别是活化能为0.12 eV的深陷阱浓度, 这是决定CaCu₃Ti₄O₁₂陶瓷高频区介电损耗的重要因素.降低直流电导, 有利于降低低频区介电损耗; 而高频区介电损耗的降低, 需要降低深陷阱浓度或增大晶粒尺寸. 共沉淀法制备的CaCu₃Ti₄O₁₂陶瓷, 有效降低直流电导及控制深陷阱浓度, 介电损耗降低明显. 关键词： 3Ti₄O₁₂陶瓷')" href="#">CaCu₃Ti₄O₁₂陶瓷 介电损耗 松弛过程 Schottky势垒     

CaCu3Ti4O12 陶瓷介电模量响应特性的研究

由于CaCu₃Ti₄O₁₂巨介电常数陶瓷的低频区直流电导较大, 本文采用模量 M"-f频谱表征与分析了低频和高频的两个松弛极化过程. 研究认为, 这两个特征峰属于晶界区Schottky 势垒耗尽层边缘深陷阱的电子松弛过程, 其中高频松弛峰起源于晶粒本征缺陷的电子松弛过程, 而低频松弛峰则为与氧空位有关的松弛极化过程. 对于CaCu₃Ti₄O₁₂这类低频下具有高直流电导的陶瓷材料, 采用模量频谱能更有效地分析研究其损耗极化机理. 关键词： 3Ti₄O₁₂陶瓷')" href="#">CaCu₃Ti₄O₁₂陶瓷 模量 松弛过程 电导     

CaCu3Ti4O12陶瓷的介电特性与弛豫机理

本文采用Novocontrol宽频介电谱仪在-100 ℃–100 ℃温 度范围内、0.1 Hz–10 MHz频率范围内测量了表面层打磨前 后CaCu₃Ti₄O₁₂陶瓷的介电特性, 分析了CaCu₃Ti₄O₁₂陶瓷的介电弛豫机理. 首先, 基于对宏观“壳-心”结构的定量分析, 排除了巨介电常数起源于表面层效应的可能性; 其次, 基于经典Maxwell-Wagner夹层极化及其活化能物理本质的分析, 排除了巨介电常数起源于经典Maxwell-Wagner极化的可能性; 最后, 依据晶界Schottky势垒与本征点缺陷的本质联系, 提出了巨介电常数起源于Schottky势垒边界陷阱电子弛豫的新机理. 陷阱电子弛豫机理反映了CaCu₃Ti₄O₁₂陶瓷本征点缺陷、 电导、介电常数之间的本质关系. 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 介电弛豫 Schottky势垒 点缺陷     

Temperature-dependent ac conductivity and dielectric response of vanadium doped CaCu3Ti4O12 ceramic

Successful incorporation of vanadium dopant within the giant dielectric material CaCu₃Ti₄O₁₂ (CCTO) through a  conventional solid-state sintering process is achieved and its influence on the dielectric as well as electrical properties as a function of temperature and frequency is reported here. Proper crystalline phase formation together with dopant induced lattice constant shrinkage was confirmed through X-ray diffraction. The temperature dependence of the dielectric constant at different constant frequencies was investigated. We infer that the correlated barrier hopping (CBH) model is dominant in the conduction mechanism of the ceramic as per the temperature-dependent ac conductivity measurements. The electronic parameters such as density of the states at the Fermi level, N(E _f) and hopping distance, R _ω of the ceramic were also calculated using this model.     

氧含量对CaCu3Ti4O12巨介电常数和介电过程的影响

本文研究了在真空、空气和氧气中烧结制备的三种 CaCu₃Ti₄O₁₂陶瓷材料的介电特性. 交流阻抗测量结果表明在10—300 K温度范围, 三种样品的介电温谱中均出现三个平台, 其电阻实部和电容虚部在相应温度出现损耗峰, 真空条件烧结的样品具有较高的介电平台和较明显的电阻实部与电容虚部峰值, 表明氧含量和氧空位对CaCu₃Ti₄O₁₂的介电性质具有重要影响, 介电温谱出现的三个平台分别源于晶粒、晶界及氧空位陷阱.温谱分析表明晶粒的激活能与烧结气氛有较大关系,氧空位引起的电子短程跳跃及跳跃产生的极化子是晶粒电导和电容的主要起源.氧空位陷阱的激活能基本与烧结气氛无关,约为0.46 eV. 氧空位对载流子的陷阱作用是CaCu₃Ti₄O₁₂ 低频高介电常数的重要起源.     

Synthesis, structural and electrical properties of La and Nb modified Bi4Ti3O12 ferroelectric ceramics

Polycrystalline ceramic samples of Bi_4−xLa_xTi₃O₁₂ (x=0.0, 0.5 and 1) and Bi_3.5La_0.5Ti_3−yNb_yO₁₂ (y=0.02 and 0.04) have been synthesized by standard high temperature solid state reaction method using high purity oxides and carbonates. The effect of lanthanum doping on Bi-site and Nb doping on Ti-site on the structural and electrical properties of Bi₄Ti₃O₁₂ powders was investigated by X-ray diffraction, scanning electron microscopy, dc conductivity and dielectric studies. A better agreement between the observed and calculated X-ray diffraction pattern was obtained by performing the Rietveld refinement with a structural model using the non-centrosymmetric space group Fmmm in all the cases. A better agreement between observed and calculated d-values also shows that the lattice parameters calculated using the Rietveld refinement analysis are better. The increase in lanthanum and niobium contents does not lead to any secondary phases. It is found that La³⁺ doping reduces the material grain size and changes its morphology from the plate-like form to a spherical staking like form. The substitution of Nb for Ti ions affected the degree of disorder and modified the dielectric properties leading to more resistive ceramic compounds. The shape and size of the grains are strongly influenced by the addition of niobium to the system. The activation energies of all the compounds were calculated by measuring their dc electrical conductivities. The frequency and temperature dependent dielectric behavior of all the compounds have also been studied and the results are discussed in detail. The substitution of La and Nb on the Bi and Ti sites decreased the T_c and improved the dielectric and ferroelectric behavior.     

Fe3O4 Segregation and Transport Properties of La0.67Ca0.33MnO3

Effect of Fe3O4 segregation at grain boundaries on the electrical transport and magnetic properties of La0.67Ca0.33MnO3 is investigated. The experimental results show that the Fe3O4 segregation not only shifts the paramagnetic-ferromagnetic transition temperature of La0.6TCa0.33MnO3 to a lower temperature region but also induces a new transition in a lower temperature region. Meanwhile, the transition processes observed in both the resistivity and magnetization curves are obviously widened. Compared to pure La0.67Ca0.33MnO3, we assume that the Fe3O4 segregation level at the grain boundaries can modify the electrical transport and magnetic properties of La0.67Ca0.33MnO3.     

Synthesis,structural and electrical properties of Ti modified Bi2Sn2O7 pyrochlore

Polycrystalline ceramic samples of Bi₂Sn_2−xTi_xO₇ (x=0.00, 0.2, 0.4, 0.6 and 0.8) have been synthesized by standard high temperature solid state reaction method. The effect of homovalent cation (titanium) substitution on the Sn-site on the structural and electrical properties of the pure Bi₂Sn₂O₇ ceramic have been studied by X-ray diffraction followed by SEM, dielectric and dc conductivity studies. The structural analysis indicates that the increase of titanium contents do not lead to any secondary phase. The frequency and temperature dependent dielectric studies have been carried out. It is found that the Ti doping reduces the material particle size. The size of the particles are strongly influenced by the addition of titanium to the system. The substitution of Ti for Sn ions affected the degree of disorder and modified the dielectric properties leading to more resistive ceramic compounds. The activation energies of all the compounds were calculated using the relation σ=σ₀exp(−Ea/kT).     

Dielectric property of CaCu3Ti4O12 thin film grown on Nb-doped SrTiO3(100) single crystal

Thin film of CaCu₃Ti₄O₁₂ (CCTO) has been deposited on Nb-doped SrTiO₃(100) single crystal using pulsed laser deposition. The dielectric constant and AC conductivity of CCTO film in the metal–insulator–metal capacitor configuration over a wide temperature (80 to 500 K) and frequency (100 Hz to 1 MHz) range have been measured. The small dielectric dispersion with frequency observed in the lower temperature region (<300 K) indicates the presence of small defects in the deposited CCTO thin film. The frequency-dependent AC conductivity at lower temperature indicates the hopping conduction. The dielectric dispersion data has been analyzed in the light of both conductivity relaxation and Debye type relaxation with a distribution of relaxation times. Origin of dielectric dispersion is attributed to the distribution of barrier heights such that some charge carriers are confined between long-range potential wells associated with defects and give rise to dipolar polarization, while those carriers which do not encounter long-range potential well give rise to DC conductivity.