Growth and characterization of rocksalt MnS/GaAs epilayers by hot-wall epitaxy

Epitaxial growth characteristics of α-MnS on GaAs(1 0 0) substrates have been investigated by X-ray diffraction and double crystal rocking curve measurements. Growth of stoichiometric α-MnS films has been performed by hot-wall epitaxy using Mn and ZnS as a source of sulfur. The films on GaAs(1 0 0) at low substrate temperature exhibit multiphase crystal structures of zincblende and rocksalt, and the main structure is changed to rocksalt with increasing substrate temperature. Photoluminescence spectrum of the α-MnS epilayer at 5 K exhibits broad emission bands, which are attributed to Mn²⁺ ions. The band gap energy of the α-MnS epilayer at room temperature was also estimated to be about 3.3 eV by reflection.     

Exchange bias effect in multiferroic Eu0.75Y0.25MnO3

The exchange bias phenomenon has been investigated in multiferroic Eu_0.75Y_0.25MnO₃. The material shows a weak ferromagnetism with cone spin configuration induced by external magnetic field below 30 K. Consequently, the electric polarization coming from the cycloid spin order below 30 K can be suppressed by external magnetic fields. The magnetic hysteresis loops after cooling in a magnetic field exhibit characteristics of exchange bias below the spin glassy freezing temperature (T_g)∼16 K. The exchange bias field, coercivity field, and remanent magnetization increase with increasing cooling magnetic field. The exchange bias effect is ascribed to the frozen uncompensated spins at the antiferromagnetism/weak ferromagnetism interfaces in the spin-glass like phase.     

Ferromagnetism above room temperature in bulk sintered gallium phosphide doped with manganese

Evidence for ferromagnetism in bulk sintered gallium phosphide (GaP) doped with 3% manganese, having a Curie temperature of 600 K considerably higher than previous observations, is obtained using ferromagnetic resonance (FMR) and AC magnetization measurements. The field position and line width of the resonance showed a strong temperature dependence characteristic of FMR spectra. A non-resonant derivative signal centered at zero field was also observed starting at 600 K further confirming high temperature ferromagnetism. AC magnetization measurements also show the existence of ferromagnetism at high temperature.     

Synthesis of α-Fe2O3 nanobelts and nanoflakes by thermal oxidation and study to their magnetic properties

α-Fe₂O₃ nanobelts and nanoflakes have been successfully synthesized by oxidation of iron-coated ITO glass in air. The X-ray diffraction, Raman spectrum and scanning electron microscopy are carried out to characterize the nanobelts and nanoflakes. The formation mechanism has been presented. Significantly, the magnetic investigations show that the magnetic properties are strongly shape-dependent. The magnetization measurements of belt-like and flake-like α-Fe₂O₃ in perpendicular exhibit ferromagnetic feature with the coercivity (H_c) and saturation magnetization (M_s) of 334.5 Oe and 1.35 emu/g, 239.5 Oe and 0.12 emu/g, respectively. For the parallel, belt-like and flake-like α-Fe₂O₃ also exhibit ferromagnetic feature with the H_c and M_s of 205.5 Oe and 1.44 emu/g, 159.6 Oe and 0.15 emu/g, respectively.     

Study of ferromagnetism in Bi2S3 and ZnS nanocrystalline powders

Results of magnetic measurements suggested that Bi₂S₃ and ZnS nanocrystalline powders prepared by hydrothermal method could possibly exhibit room temperature ferromagnetism. The measured saturation magnetization of the powders increases with an increase of annealing temperature from 300 to 500 °C. Ab initio calculations suggested that the cation vacancies on the surface of Bi₂S₃ and ZnS nanograins could be responsible for the observed magnetic moments. Heat-treatment of Bi₂S₃ or ZnS nanocrystalline powders in Bi or Zn vapor could bring about an enhancement of ferromagnetism. The calculation results indicated that the interstitial Bi or Zn atoms in Bi₂S₃ (0 0 1) or ZnS (0 0 1) surface could induce magnetic moments.     

Theory of carrier mediated ferromagnetism in dilute magnetic oxides

We analyze the origin of ferromagnetism as a result of carrier mediation in diluted magnetic oxide semiconductors in the light of the experimental evidence reported in the literature. We propose that a combination of percolation of magnetic polarons at lower temperature and Ruderman-Kittel-Kasuya-Yosida ferromagnetism at higher temperature may be the reason for the very high critical temperatures measured (up to ∼700 K).     

The anomalous low temperature resistivity of thermally evaporated α-Mn thin film

Electrical resistivity measurements have been carried out on thermally evaporated α-Mn thin film between 300 and 1.4 K using the van der Pauw four probe technique. The film was grown on a glass substrate held at a temperature of 373 K, in an ambient pressure of 5×10⁻⁶ Torr. The results show a resistance minimum, a notable characteristic of α-Mn but at a (rather high) temperature of 194±1 K. Below the resistivity maximum which corresponds to 70 K, the resistivity drops by only 0.02 μΩm indicating a rather short range magnetic ordering. The low temperature results show a tendency towards saturation of the resistivity as the temperature approaches zero suggesting a Kondo scattering.     

The Si(1 1 1)-(7 × 7) reconstruction: A surface close to a Mott-Hubbard metal-insulator transition?

Li adsorption at extremely low coverages on the “metallic” Si(1 1 1)-(7 × 7) surface has been experimentally studied recently by β-NMR experiments. Instead of increasing linearly with the sample temperature, as expected for a metallic system, the relaxation rate α = 1/T₁ is almost constant in between 50 K and 300 K sample temperature and rises Arrhenius like above. In order to understand this behaviour in a transparent way a closed form analysis is presented using rectangular density of states distributions. The almost temperature independent relaxation rate below 300 K points to an extremely localized and thus narrow band (width about 10 meV) which pins the Fermi energy. Because of the steeply rising relaxation rate beyond 300 K it is located energetically within a gap (about 380 meV wide) in between a lower filled and an upper empty (Hubbard) band. In dynamical mean field theories based on Hubbard Hamiltonians this kind of density of states is typical for correlated electron systems close to a Mott-Hubbard metal-insulator transition.     

Effect of sintering temperature and the particle size on the structural and magnetic properties of nanocrystalline Li0.5Fe2.5O4

Sintering temperature and particle size dependent structural and magnetic properties of lithium ferrite (Li_0.5Fe_2.5O₄) were synthesized and sintered at four different temperatures ranging from 875 to 1475 K in the step of 200 K. The sample sintered at 875 K was also treated for four different sintering times ranging from 4 to 16 h. Samples sintered at 1475 K have the cubic spinel structure with a small amount of α-Fe₂O₃ (hematite) and γ-Fe₂O₃ (maghemite). The samples sintered at≤1275 K do not show hematite and maghemite phases and the crystals form the single phase spinel structure with the cation ordering on octahedral sites. Particle size of lithium ferrite is in the range of 13-45 nm, and is depend on the sintering temperature and sintering time. The saturation magnetization increased from 45 to 76 emu/g and coercivity decreases from 151 to 139 Oe with an increase in particle size. Magnetization temperature curve recorded in ZFC and FC modes in an external magnetic field of 100 Oe. Typical blocking effects are observed below about 244 K. The dielectric constant increases with an increase in sintering temperature and particle size.