Au/Cu(001)异质外延岛演化的分子动力学研究

利用分子动力学弛豫方法模拟了Au/Cu(001)异质外延生长初期Au异质外延岛的形貌演化，分析了Au外延岛演化过程中的局域应力及与基体结合能随表面岛尺寸的变化. 研究结果表明：当异质外延岛小于7×7时，外延岛原子分布呈现赝Cu点阵形貌；当外延岛达到8×8后，外延岛内开始出现失配位错，失配位错数量随外延岛尺寸的增加而增加. 局域压力分析指出，外延岛上原子之间的近邻环境不同导致了所受应力的差异，而外延岛的形变则是由外延岛原子的应力分布所决定. 研究还发现，失配位错的产生导致错位原子与基体原子之间的结合强度减弱，但相对增加了非错位原子与基体原子之间的结合强度. 关键词： 异质外延 表面形貌 局域压力 分子动力学模拟     

Ag(111)和Au(111)上铋的初始生长行为

半金属铋(Bi)的表面合金具有的Rashba效应,和其具体结构性质有重要关联.本文结合扫描隧道显微镜(STM)和密度泛函理论(DFT),系统地研究了Bi原子在Ag(111)和Au(111)上的不同初始生长行为.在室温Ag(111)上,连续的Ag₂Bi合金薄膜会优先在Ag台阶边缘形成;在570 K Ag(111)上,随着覆盖度增加到0.33分子层(ML),Bi优先取代配位数低的台阶边原子并从单原子随机分布转变为长程有序的Ag₂Bi合金相;随着覆盖度增加,Ag₂Bi通过退合金过程转变成p×3^1/2结构的Bi膜.Bi在室温和570 K的Au(111)上的生长行为一致:在覆盖度低于0.40 ML时,Bi会优先吸附在配位为5的Au原子上,并以单原子和团簇的形式分别分散在Au(111)的密堆积区域和鱼骨纹重构的拐角处;随着覆盖度增加到0.60 ML,无序的Bi会逐渐转变成长程有序的((37)^1/2×(37)^1/2)相;Bi的吸附会导致Au(111)表面应力逐步释放.Bi在Ag(111)和Au(111)上的不同生长行为表明,Bi原子与衬底之间的相互作用起着关键作用.     

Cu-Au体系非对称异质外延行为的分子动力学研究

利用分子动力学模拟方法研究了Cu/Au(001)和Au/Cu(001)异质外延岛的演化行为. 研究结果显示：Cu-Au体系的相互外延行为呈现出明显的非对称性. Cu在Au(001)基体表面可以形成完整的外延结构，而Au在Cu(001)基体表面外延将导致失配位错的出现. 导致非对称外延生长行为的根本原因是外延岛的应变状态的差异和外延岛自身性质的不同. 随着外延岛的长大，Cu外延岛与Au(001)基体的微观失配度由最初的接近宏观失配度的9%左右迅速单调下降，并最终趋于晶格匹配；而Au在Cu(001)基体表面外延的微观失配度则呈现出振荡增加趋势. Cu/Au(001)体系的基体形变主要发生在外延岛的边缘，而Au/Cu(001)体系的基体形变主要发生在外延岛内部所对应的区域.     

Cu(111)三维表面岛对表面原子扩散影响的分子动力学研究

采用嵌入原子方法的原子间相互作用势，利用分子动力学方法计算了同质外延生长中不同层数的三维Cu(111)表面岛上表面原子扩散激活能，分析了三维表面岛的层数对表面原子交换扩散和跳跃扩散势垒的影响. 研究结果表明，二维Enrilich-Schwoebel(ES)势垒小于三维ES势垒，且三维ES势垒不随表面岛层数的增加而显著变化. 对于侧向表面为(100)的表面岛，表面原子沿〈011〉方向上的扩散行为，随表面岛层数增加而逐渐变化；在表面岛层数达到3层时，扩散路径上的势垒变化趋于稳定，表面原子扩散以下坡扩散为主. 对于侧面取向为(111)的表面岛，当表面岛层数大于3层后，开始呈现上坡扩散的可能. 关键词： 表面原子 扩散 分子动力学模拟     

立方相Ag3PO4(111)面原子几何及弛豫结构的第一性原理计算

采用平面波超软赝势方法研究了立方相Ag3PO4(111)面的表面能和表面原子弛豫结构.首先对Ag3PO4(111)面的八种不同原子终止结构的体系总能量进行计算,结果表明B种表面模型被证实为最稳定的(111)面原子几何结构.针对该表面结构,探讨了表面能和原子弛豫与模型中原子层数和真空厚度的关系,当原子层数为24层,真空厚度为0.6 nm时,表面能收敛于1.41 J/m2(LDA-CAPZ)和1.39 J/m2(GGA-PBE).表面原子弛豫后,表面两个三配位的Ag原子均向里移动,超过0.06 nm,而表面次层的O原子则均向外移动约0.0042 nm,导致弛豫后暴露在最表面的是O原子,同时表面原子的核外电子向表面内部发生转移,结构趋于稳定.这些结果为进一步深入研究Ag3PO4表面的光催化活性起源提供理论支持.     

S在Cu(111)表面吸附的第一性原理研究*

基于广义梯度近似的投影缀加平面波(Projector augmented wave) 赝势和具有三维周期性边界条件的超晶胞模型,采用第一原理方法计算并分析了由于S吸附所形成的S/Cu(111)界面体系的吸附结构、吸附能和局域电子结构,考虑了不同覆盖度（1,0.25ML）下S在不同吸附位置的吸附特性. 结果表明：S原子倾向于吸附在高对称的fcc位与hcp位;由于S的负电性而使S/Cu吸附能随覆盖度的减小而增加, 与之相应,S-Cu键长随覆盖度的减小而缩短. DOS图、Bader电荷分析表明杂化主要发生在S的3p态和表面Cu原子的3d态之间,表层近邻的Cu原子向S转移的电子数随覆盖度增加而减小,这表明S与Cu(111)面有强的相互作用.     

CuAg纳米结构表面共存和Ag表面对甘氨酸的新吸附行为

在异质纳米结构表面发生的新现象是当前研究的热点.最近发现，尽管甘氨酸在纯Ag表面只 能作物理吸附，蒸镀在Cu表面的单层Ag岛却能在Cu的帮助下，出现对甘氨酸作化学吸附的能力，这种现象是溢流效应的一种反映.蒸镀在Ag表面的Cu岛也能帮助附近裸露的Ag表面获得 化学吸附甘氨酸的能力，虽然这里已不是单原子层的银了.结果说明这种溢流现象来源于CuA g在表面的纳米结构共存，而不只是这种共存的某个结构所特有的.但是，由于Cu的表面能大 于Ag，所以即使是在室温下，Cu岛也会逐渐地被一单层Ag原子完全覆盖，从而失去溢 关键词： 溢流 甘氨酸 Cu Ag(111)     

金刚石/硅(001)异质界面的分子动力学模拟研究

采用分子动力学方法模拟研究了未重构的金刚石/硅(001)面相接触时界面层原子的弛豫过程及所形成的异质界面的结构特征.硅碳二元系统中原子间的相互作用采用Tersoff多体经验势描述.弛豫前沿[110]与[110]方向界面碳硅原子数之比均为3∶2.界面碳硅原子总数之比为9∶4.弛豫后金刚石与硅界面处晶格匹配方式改变为[110]方向基本上以3∶2关系对准,而[110]方向大致以1∶1关系对准.相应地,界面碳硅原子总数之比接近3∶2.界面下方部分第二层硅原子在弛豫过程中向上迁移至界面是引起这种变化的原因,同时该层其他原子及其底下一到两个原子层厚度的区域在[001]方向上出现一定程度的无序化转变倾向.金刚石/硅异质界面处的硅碳原子发生强烈键合,形成平均键长为0.189nm的硅碳键.研究证实,晶格匹配主要呈现界面及其附近硅原子迎合界面碳原子排列的特点. 关键词： 金刚石 硅 异质界面 分子动力学     

Co/Cu(111)薄膜生长和退火过程中的扩散

利用同步辐射角分辨光电子能谱和俄歇电子能谱研究了CoCu(111)分子束外延薄膜在生长和退火过程中的电子结构.实验发现:随着Co膜厚度的增加,Cu的sdz2杂化带能级位移相应增大,证实了界面间发生了互混;退火过程中存在表面扩散,而非通过界面的体扩散.并把这两种不同过程的扩散的内在动力归结为Co的表面自由能显著大于Cu的表面自由能 关键词： 表面扩散和界面混合物形成 固体表面能 表面态和能带结构     

替位杂质对贵金属(111)表面稳定性影响的分子动力学研究

采用嵌入原子方法的原子间相互作用势，通过分子动力学方法研究了过渡族金属Cu，Ag，Au，Ni，Pd，Pt(111)表面的相互替位掺杂对表面稳定性的影响，计算了替位掺杂体系的表面能与表面空位形成能，探讨了影响表面稳定性的因素及其变化规律. 计算表明：替位杂质对表面能变化的影响主要是替位杂质的凝聚能和原子半径，而影响空位形成能变化的原因除凝聚能和原子半径外，合金溶解热具有重要的作用. 此外，通过替位杂质导致的体系表面能变化对合金体系的偏析行为进行了预测，理论预测与实验结果符合很好. 关键词： 替位杂质 贵金属 表面能 表面空位形成能     

Adsorption-desorption properties and surface structural chemistry of chlorine on Cu(111) and Ag(111)

The adsorption, desorption, and structural properties of chlorine adlayers on Cu(111) and Ag(111) have been studied by LEED, Auger, Δ?, and thermal desorption measurements. Ancillary experiments were also carried out on cuprous chloride for purposes of comparison with the Cu(111)-Cl data. Chlorine adsorption is rapid on both metals and follows precursor kinetics, the absolute initial sticking probabilities being ~1.0 (Cu) and ~0.5 (Ag). Δ? results suggest that significant depolarisation of the chemisorption bond occurs at high coverages, the maximum values being + 1.2 eV (Cu) and + 1.8 eV (Ag). On Cu(111), adsorption leads to the formation of a sequence of well-ordered phases; in order of increasing coverage, these are as follows: (√3 × √3)R30°, (12√3 × 12√3)R30°, (4√7 × 4√7)R19.2°, and (6√3 × 6√3)R30°. On Ag(111) (√3 × √3)R30°, and (10 × 10) structures are observed. All six structures are susceptible to a straightforward interpretation in terms of coincidence lattices resulting from the progressive uniform compression of a hexagonal layer of Cl atoms. This interpretation is consistent with all the experimental results, and gives values for the nearest-neighbour ClCl spacing on both Cu(111) and Ag(111) which are in good agreement with other work on other surfaces. Chlorine desorbs exclusively as atoms from both metals with first-order desorption kinetics, and apparent desorption energies of 236 (Cu) and 209 (Ag) kJ mol^?1. These values, which depend on an assumed pre-exponential factor of 10¹³ s^?1, are shown to be inconsistent with the thermochemical constraints on the system necessitated by the complete absence of Cl₂ desorption. Lower limits for the pre-exponential factors are then deduced, and the values are found to be consistent with the differences between the CuCl and AgCl systems.     

Charging of metal adatoms on ultrathin oxide films: Au and Pd on FeO/Pt(111)

We present a combined experimental (STM/scanning tunneling spectroscopy) and theoretical (density functional theory) study on the deposition of Au and Pd metal atoms on FeO/Pt(111) ultrathin films. We show that while the Pd atoms are only slightly oxidized, the Au atoms form positive ions upon deposition, at variance to a charge transfer into the Au atoms as observed for MgO/Ag(100). The modulation of the adsorption properties within the surface Moiré cell and the charging induce the formation a self-assembled array of gold adatoms on FeO/Pt(111), whereas Pd atoms are randomly distributed.     

Initial growth process and surface structure of Ag on Si(111) studied by low-energy Ion-Scattering Spectroscopy (ISS) and LEED-AES

The growth process of silver on a Si(111) substrate has been studied in detail by low-energy ion-scattering spectroscopy (ISS) combined with LEED-AES. Neon ions of 500 eV were used as probe ions of ISS. The ISS experiments have revealed that the growth at room temperature and at high temperature are quite different from each other even in the submonolayer coverage range. The following growth models have been proposed for the respective temperatures. At room temperature, the deposited Ag forms a two-dimensional (2D) island at around 2/3 monolayer (ML) coverage, where the Ag atoms are packed commensurately with the Si(111)1 substrate. One third of the substrate Si surface remains uncovered there. Then it starts to develop into Ag crystal, and at a few ML coverage a 3D island of bulk Ag crystal grows directly on the substrate. An intermediate layer, which covers uniformly the whole surface before the growth of Ag crystal, does not exist. At high temperatures (>~200°C), the well-known Si(111)√3-Ag layer is formed as an intermediate layer, which consists of 2/3 ML of Ag atoms and covers the whole surface uniformly. These Ag atoms are embedded in the first double layer of the Si substrate. It is concluded that the formation of the √3 structure needs relatively high activation energy which may originate from the large displacement of Si atoms owing to the embedment of the Ag atoms, and does not proceed below about 200°C. The most stable state of the Ag atoms on the outermost Si layer is in the shape of an island, both for the Si(111) surface and for the Si(111)√3-Ag surface.     

The molecular dynamic study of anharmonic effects at Cu(111) and Ag(111) surfaces in the presence of Cu- and Ag-trimer island

The molecular dynamics (MD) technique based on semi-empirical potentials, is used to carry out the diffusion of Cu- and Ag-trimer on Cu- and Ag(111) surface at 300, 500 and 700 K temperatures. The constant energy MD simulation elaborates the anharmonic effects at the surface such as fissures, dislocations and vacancy creation, in the presence of island. The fissures and dislocations formed are in the range of 1.5–4 Å and 1–7 Å, respectively, from the island's position. The Cu and Ag islands both diffuse easily on Cu(111) surface, manipulate that the trend of diffusion is faster on Cu surface as compared to Ag surface. The process of breaking and opening of the island has also been observed. Moreover, a surface atom popped-up at 700 K by creating a vacancy near the Cu island on Ag surface. The rate of diffusion increases with the increase in temperature, both for homo- and hetero-cases.     

X-ray photoelectron diffraction study of discommensurate Cu/Ge(111)

We have studied the atomic structure in the interior of discommensurate domains of the Cu/Ge(111) surface by using scanned-angle X-ray photoelectron diffraction (XPED). XPED patterns of Cu 2p_3/2 intensity provided direct information on the local structure in the vicinity of photoelectron emitters. It has been found that a certain number of Cu atoms are embedded within the surface layer, so that the surface has some structural similarity with the discommensurate Cu/Si(111)-‘5×5’.     

XPS studies of adatom-adatom interactions: I/Ag(111) and I/Cu(111)

We have studied submonolayer adsorption, at room temperature, of iodine on the (111) faces of silver and copper, using LEED and XPS. In both systems the √3 × √3 LEED pattern appears at ～0.2 monolayer (ML) coverage; no other superlattice pattern was observed. The $\text{I}\text{4}\text{d}{}_{\mathrm{<mtext>5</mtext><mtext>2</mtext>}}$ core electron binding energy in both cases decreases by ～0.15 eV between very dilute coverage and 0.33 ML. The leveling-off of the binding energy for I/Ag(111) for coverages >0.2 ML is shown to be a unique experimental manifestation of an indirect, substrate-mediated adatom-adatom interaction, an attraction of several meV between next-nearest neighbor iodine atoms. The more nearly linear decrease in the I binding energy on Cu(111) is shown to imply a significantly weaker next-nearest neighbor interaction on this surface. The appearance of the √3 × √3 LEED pattern at low coverages on Cu is shown to be consistent with short-range order produced merely by a size effect, that is, by nearest neighbor exclusion. These conclusions are reached with the help of Monte Carlo calculations of a triangular lattice gas.     

Atomic Diffusion in Cu/Si （111） and Cu/SiO2/Si （111） Systems by Neutral Cluster Beam Deposition

The Cu films are deposited on two kinds of p-type Si （111） substrates by ionized duster beam （ICB） technique. The interface reaction and atomic diffusion of Cu/Si （111） and Cu/SiO2/Si （111） systems are studied at different annealing temperatures by x-ray diffraction （XRD） and Rutherford backscattering spectrometry （RBS）. Some significant results are obtained： For the Cu/Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230℃. The diffusion coefficients of the samples annealed at 230℃ and 500℃ are 8.5 ×10^-15 cm^2.s^-1 and 3.0 ×10^-14 cm^2.s^-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2//Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450℃. The diffusion coefficients of Cu in Si are calculated to be 6.0 ×10^-16 cm^2.s^-1 at 450℃, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.     

NO dissociation on Cu(111) and Cu2O(111) surfaces: a density functional theory based study

NO dissociation on Cu(111) and Cu(2)O(111) surfaces is investigated using spin-polarized density functional theory. This is to verify the possibility of using Cu-based catalyst for NO dissociation which is the rate limiting step for the NO(x) reduction process. The dissociation of molecularly adsorbed NO on the surface is activated for both cases. However, from the reaction path of the NO-Cu(2)O(111) system, the calculated transition state lies below the reference energy which indicates the possibility of dissociation. For the NO-Cu(111) system, the reaction path shows that NO desorption is more likely to occur. The geometric and electronic structure of the Cu(2)O(111) surface indicates that the surface Cu atoms stabilize themselves with reference to the O atom in the subsurface. The interaction results in modification of the electronic structure of the surface Cu atoms of Cu(2)O(111) which greatly affects the adsorption and dissociation of NO. This phenomenon further explains the obtained differences in the dissociation pathways of NO on the surfaces.     

Angle resolved photoemission measurements on AgSi(111) 7 × 7 interfaces

The AgSi(111) interface is investigated by LEED, AES and angle resolved photoemission spectroscopy using 50 eV synchrotron radiation in p-polarization. Results on room temperature (RT) silver growth on Si(111) 7 × 7 are characterized by an evolution of the LEED pattern and of the d band shape which is consistent with 2D island formation in the submonolayer range. When the Ag coverage (Θ) is increased, a progressive build-up of Ag layers occurs with a possible interdiffusion of the atomic constituents. The ordered $\text{Si(111)}\text{3}\text{×}\text{3}\text{R(30°)Ag}$ structure (R₃) obtained by annealing a 1 ML RT deposit gives rise to new interface states near E_F. In contrast to the RT deposit at the same Θ, two well defined d band peaks are present while the bulk Si emission near 3.4 eV is clearly seen. The R₃ data would favour recent crystallographic models which conclude to an embedment of the Ag atoms in a threefold hollow adsorption site.