ZnO-Si不同退火条件对生长ZnSe薄膜的影响

研究了作为缓冲层的ZnO薄膜在不同的退火时间、退火温度下退火对Si衬底上生长ZnSe膜质量的影响。当溅射有ZnO膜的Si(111)衬底的退火条件变化时，从X射线衍射谱（XRD）和光致发光谱（PL）中可见，ZnSe(111)膜的晶体质量有较大的变化。变温的PL谱表明，Si衬底上生长的具有ZnO缓冲层的ZnSe膜的近带边发射峰起源于自由激子发射。     

体心立方多晶膜中应变能密度的各向异性分析

根据弹性理论和多晶膜的屈服强度公式，计算了附着在基体上体心立方多晶薄膜中不同取向晶粒中的应变能密度.结果表明：1）在屈服之前，对Fe和Ta两种薄膜，4个最小的应变能密度对应的晶粒取向依次为（100），（510），（410）和（511）；对Cr，Mo，Nb和V四种薄膜，4个最小的应变能密度对应的晶粒取向依次为（111），（332），（322）和（221）；对W膜，应变能密度与晶粒取向无关.2）在屈服的体心立方多晶膜中，4个最小的应变能密度对应的晶粒取向依次为（100），（111），（110）和（411）.从 关键词： 体心立方多晶薄膜 晶粒取向 应变能密度 织构     

冷轧铜板再结晶織构的形成

电解纯铜经88.7％冷轧后,所形成的轧制织构除稳定的(110)[112]舆(112)[111]外,还存在着一种(3,6,11)[533]织构。在较低温度下退火时,再结晶织构主要为(100)[001]、(358)[352]和舆(100)[001]成孪生取向的(122)[212]织构。随着退火温度的增加,(358)[352]织构逐渐减弱,立方织构(100)[001]则逐渐加强;当退火温度达到900℃时,开成了集中的(100)[001]织构。冷轧铜板在退火的过程中,具有(100)[001]再结晶晶粒首先形成,然后普遍地发生同位再结晶。其中具有(100)[001]取向的晶粒,继续发生选择性的生长,最后形成了集中的立方织构。本支中对轧制织构舆其再结晶织构取向间的关系也进行了分析,再结晶织构一般可认为是原有织构沿某一个[111]轴旋转45°,22°或38°的结果。同时,根据上述几何关系所绘出的理想极图舆实际测定的结果也是符合的。试验结果指出,不同加热速度和不同加热程序对形成最终的再结晶织构,不发生显著的影响,而退火温度对再结晶织构的形成起着主要的作用。     

薄膜中异常晶粒生长理论及能量各向异性分析

针对柱状晶薄膜，建立了异常晶粒生长理论模型.指出薄膜中的晶粒生长，除像传统的整体材料中的晶粒生长一样考虑晶界能外，还应当考虑表面能、界面能和应变能.对能量的各向异性进行了回顾性分析.从表面能的最小化考虑，面心立方和体心立方薄膜的择优取向或织构应分别为（111）和（110）；而从应变能的最小化考虑，面心立方和体心立方薄膜的择优取向或织构应分别为（110）和（100）. 关键词： 薄膜 异常晶粒生长 模型 织构     

低相变温度垂直取向的CoPtCu/Ag纳米复合膜

采用磁控溅射(Ag/Cu/CoPt)_n多层膜先驱体结合真空退火的方法制备了一系列CoPtCu/Ag纳米复合薄膜，通过优化薄膜中Ag以及Cu的含量，成功制备出了低相变温度垂直取向的CoPtCu/Ag纳米复合膜，该膜在450℃退火即可发生相变，该温度比目前所报导的CoPtAg纳米复合膜的相变温度降低了150℃. 实验结果表明，薄膜中一定含量的Ag元素能够有效诱导薄膜的(001)取向，Cu元素的加入能有效降低薄膜的有序化温度. 对于特定组分为Co₄₀Pt₃₆Cu₈Ag₁₆的薄膜，经500℃退火后已经显示了明显的(001)取向，垂直于膜面方向上的矫顽力为5.0×10⁵A/m，并且薄膜中晶粒尺寸仅为4—5nm，为将来CoPt-L1₀有序相合金薄膜用于超高密度垂直磁记录介质打下了基础. 关键词： 磁记录材料 CoPt 纳米复合膜     

Cu/SiO2/Si(111)体系中Cu和Si的扩散及界面反应

室温下利用磁控溅射在p型Si(111)衬底上沉积了Cu薄膜. 利用X射线衍射和卢瑟福背散射分别对未退火以及在不同温度点退火后样品的结构进行了表征. 在此基础上，研究了Cu/SiO₂/Si(111)体系的扩散和界面反应. 实验结果表明：当退火温度高于450℃时出现明显的扩散现象，并且随着温度的升高，体系扩散现象会更加显著. 当退火温度低于450℃时没有铜硅化合物生成，当温度达到500℃时才有铜硅化合物生成. 关键词： 薄膜 扩散 界面反应 硅化物     

Cu/SiO2/Si(111)体系中Cu和Si的扩散及界面反应

室温下利用磁控溅射在p型Si(111)衬底上沉积了Cu薄膜.利用X射线衍射和卢瑟福背散射分别对未退火以及在不同温度点退火后样品的结构进行了表征.在此基础上,研究了Cu/SiO2/Si(111)体系的扩散和界面反应.实验结果表明:当退火温度高于450 ℃时出现明显的扩散现象,并且随着温度的升高,体系扩散现象会更加显著.当退火温度低于450 ℃时没有铜硅化合物生成,当温度达到500 ℃时才有铜硅化合物生成.     

基体对应力诱导的纳米晶W膜开裂行为的影响

采用磁控溅射方法同时在Si(100)和聚酰亚胺(PI)基体上沉积W膜,对比研究不同基体约束对纳米晶W膜微观结构及应力诱导的开裂行为的影响.结果发现,在两种基体上W膜的裂纹形态明显不同.在Si基体上W膜的裂纹呈楔形,而在PI基体上W膜的裂纹呈半圆柱形凸起于薄膜表面.这种裂纹形态的差异源于两种基体上W膜的变形机理不同.在刚性Si基体上,W膜的裂纹扩展是通过晶粒平面内的转动实现的,而在柔性PI基体上W膜裂纹扩展是通过排列晶粒在平面内、外的转动协调完成的.分析表明,两种截然不同的开裂行为与不同基体上薄膜内应力的变 关键词： W膜 残余应力 裂纹 晶粒     

在Si(111)上用有机溶胶凝胶甩膜热解法制备(0001)定向的6H-SiC薄膜

在Si(111)衬底上用聚苯乙烯溶胶凝胶甩膜并经950℃真空(10^-3Pa)热解处理法,制备出晶态SiC薄膜.用FTIR,XRD,TEM,RamanXPS等方法研究了SiC薄膜的晶体结构、微结构、组成以及各元素的化学态等性质.结果表明制得的是沿(0001)高度择优取向的晶态6H-SiC薄膜.膜中SiC晶粒沿c轴柱状生长,其最大尺寸约150nm,膜厚约为0.3μm,SiC中的Si/C比约为1.表层有少许污染C(CH和CO)和少量O(Si₂O₃,CO态氧和吸附氧).从对比实验可知,在热解时将甩膜的Si片与另一空白Si片面面相贴可明显增加SiC的生成量. 关键词： 碳化硅 薄膜 溶胶凝胶     

面心立方多晶薄膜中应变能密度对晶粒取向的依赖

对附着在基体上面心立方多晶薄膜中不同取向晶粒的应变能密度进行了计算.结果表明:在屈服之前,5个最小的应变能密度对应的晶粒取向依次为(100),(510),(410),(511)和(310);在屈服膜中,5个最小的应变能密度对应的晶粒取向依次为(110),(100),(511),(411)和(211).仅考虑应变能,这些取向的晶粒将依次优先生长 关键词： 薄膜 应变能密度 晶粒生长     

用热丝CVD技术制备场发射冷阴极金刚石薄膜

以甲烷和氢气的混合气体为原料,用热丝化学汽相淀积法,在(100)硅衬底上800℃温度时异质生长出适合场发射的金刚石薄膜.然后用扫描电子显微镜、X射线衍射仪、透射电子显微镜和喇曼光谱仪等对其进行了分析,结果表明,所制备的薄膜是多晶金刚石,而且在(111)晶相择优生长.在扫描电子显微镜下(111)晶粒的外形几乎都是四面体结构,具有很多尖端,可以加强一定电压下的电场,所以所制备的薄膜能够满足低压场发射的要求.     

X-ray evidence for the absence of 90°-domains in polycrystalline PbTiO3 thin films with grains below a critical size

3 thin films is systematically studied by using X-ray diffraction (XRD). The PbTiO₃ thin films with different average grain sizes were prepared on various substrates by a sol-gel process. The films on NaCl and fused glass are randomly grain-oriented, while those on (111)Pt/Ti/SiO₂/Si are highly {100} cubic index grain-oriented . It is found from the XRD patterns of the films on NaCl that with decreasing average grain size from 230 to 80 nm, the intensities of high h index (h>l) peaks (hkl), such as (100), (110), (200), (201), (210), (211), etc., decrease rapidly and ultimately disappear, whereas another set of peaks (lkh), including (001), (002), (102), (112), etc., are still intense. This interesting result suggests that at grain size below a certain critical size an increasing number of grains no longer show 90°-domains, which is confirmed by TEM observations. Meanwhile, X-ray evidence of such a grain-size-related absence of 90°-domains is also found for PbTiO₃ films on Pt(111) and fused-glass substrates. The volume fractions of single-domain grains (without 90°-domains) in the films are estimated from their XRD patterns. By combining SEM and TEM investigations, the critical grain size for the formation of 90°-domains is further determined to be near 200 nm. Received: 19 December 1996/Accepted: 24 March 1997     

The anomalous RHEED patterns observed from (111)Ag-(111)Cu bilayers

RHEED patterns obtained from thin expitaxial bilayers consisting of Ag grown on smooth (111)Cu surfaces have been shown by Gradmann and Krause to contain anomalous reflections. Previously, these reflections were interpreted as due to a regular arrangement of interfacial dislocations or to multiple diffraction effects. In the present work a thin film technique was used to form smooth, easily detachable (111)Ag/Cu bilayers from which RHEED patterns containing these extra reflections were obtained. These films were grown, annealed, and examined in situ by UHV-RHEED techniques. They were then removed from the vacuum system, detached from their substrates and examined by TEM and TED. Thus, contrary to previous work, the present observations consisted of a series of experiments using RHEED, TED, and TEM carried out on the same specimen. No evidence was obtained to indicate that the anomalous reflections were due to interfacial dislocations. Rather, all the observed phenomena could be explained entirely by multiple diffraction effects.     

Growth of sputter-deposited Ni-Ti thin films: Effect of a SiO2 buffer layer

In-situ X-ray diffraction (XRD) during the growth of Ni-Ti thin films was chosen in order to investigate their texture development using a deposition chamber installed at a synchrotron radiation beamline. Near-equiatomic films were co-sputtered from Ni-Ti and Ti targets. The texture evolution during deposition is clearly affected by the substrate type and the ion bombardment of the growing film. On naturally oxidized Si(100) substrates, the Ni-Ti B2 phase starts by stacking onto (h00) planes, and as the thickness increases evolves into a (110) fibre texture. For the deposition on thermally oxidized Si(100) substrates, this pronounced cross-over is only observed when a substrate bias voltage (-45 V) is applied. The oxide layer plays an important role on the development of the (100) orientation of the B2 phase during deposition on heated substrates (≈470 °C). If this layer is not thick enough (naturally oxidized Si substrate) or if a bias voltage is applied, a cross-over and further development of the (110) fibre texture is observed, which is considered as an orientation that minimizes surface energies. Electrical resistivity measurements showed different behaviour during phase transformation for the Ni-Ti film deposited on thermally oxidized Si without bias and those on thermally oxidized Si(100) with bias and on naturally oxidized Si(100) without bias. This is related to stresses resultant from the fact that the Ni-Ti films are attached to the substrates as well as with the existence of distinct textures. PACS 81.15.Cd; 61.10.Nz; 68.55.Jk     

衬底对Cu(In,Ga)Se2薄膜织构的影响

分别在苏打石灰玻璃、Mo箔、无择优取向的Mo薄膜以及(110)择优取向的Mo薄膜四种不同衬底上，采用共蒸发工艺沉积约2 μm厚的Cu(In,Ga)Se₂薄膜，用X射线衍射仪测量薄膜的织构，研究衬底对Cu(In,Ga)Se₂薄膜织构的影响.在以上四种衬底上沉积的Cu(In,Ga)Se₂薄膜的(112)衍射峰强度依次逐渐减弱，(220/204)衍射峰从无到有且强度逐渐增强.在苏打石灰玻璃和Mo箔衬底上的Cu(In,Ga)Se_{2关键词： 择优取向 Cu(In 2}薄膜')" href="#">Ga)Se₂薄膜 太阳电池     

Preparation and crystallization of Pb(Zr0.95Ti0.05)O3 thin films deposited by radio-frequency magnetron sputtering with a stoichiometric ceramic target

0.95 Ti_0.05)O₃ (PZT 95/5) thin films of perovskite structure were prepared on various substrates by the radio-frequency magnetron sputtering with a stoichiometric ceramic target. The crystal structure of the films showed a strong dependency on the crystal structure of the substrates. After conventional-furnace annealing at 750 °C, crack-free and transparent epitaxial PZT 95/5 films were successfully obtained on SrTiO₃(100) substrates, and highly oriented films on LaAlO₃(012). The films on r-sapphire exhibit slightly preferred orientation along both the (040) and (122) axes of the orthorhombic PZT 95/5 phase. The films on YSZ(100) consist principally of the perovskite PZT 95/5 phase with random orientation with a small portion of unknown phase. However, the formation of the perovskite PZT 95/5 phase was not observed in the films on Si(110) or (111)Pt-coated Si substrates. The crystallization of the perovskite PZT 95/5 on these substrates could be improved by rapid thermal annealing (RTA). Single perovskite phase was obtained in the films on (111)Pt/Si which had RTA at 750 °C for 1 min. No tangible loss of Pb from the films occurred during either the sputtering or annealing. Received: 17 April 1997/Accepted: 18 November 1997     

Temperature dependence of photo-hole decay in 4d derived Quantum Well States in monolayer Ag(111) films on Pd(111), Ni(111), Mo(110) and Cu(100)

We present experimental data on the temperature dependence of photo-hole decay obtained by Angle Resolved Photoemission (ARPES) measurements from 4d derived Quantum Well States (QWS) on Ag(111) monolayer films deposited on Pd(111), Ni(111), Mo(110) and Cu(100). We have found a significant increase of the Ag 4d electron–phonon (e-ph) coupling strength with respect to the bulk values. The increase is attributed to different mechanisms that are associated with the interaction of the Ag film with under laying substrate. It is proposed that the main channels that contribute to the increased e-ph coupling originate from the inter-band transitions that involve bulk states of the substrates.     

Effects of metal doping on the physical properties of ZnTe thin films

Zinc telluride (ZnTe) thin films were sublimated on a glass substrate using closed space sublimation (CSS) technique. ZnTe thin films of same thickness were tailored with copper (Cu) & silver (Ag) doping, considered for comparative study. X-ray diffraction (XRD) patterns of as-deposited ZnTe thin film and doped ZnTe samples exhibited polycrystalline behavior. The preferred orientation of (111) having cubic phase was observed. XRD patterns indicated that the crystallite size had increased after silver and copper immersion in as-deposited ZnTe thin films. Scanning electron microscopy (SEM) was used to observe the change of as-deposited and doped sample's grains sizes. EDX confirmed the presence of Cu and Ag in the ZnTe thin films after doping respectively. The optical studies showed the decreasing trend in energy band gap after Cu and Ag-doping. Transmission also decreased after doping. Resistivity of as-deposited ZnTe thin film was about 10⁶ Ω cm. The resistivity was reduced to 68.97 Ω cm after Cu immersion, and 10⁴ Ω cm after Ag immersion. Raman spectra were used to check the crystallinity of as-deposited, Cu and Ag-doped ZnTe thin film samples.     

Structure of Ultrathin Polycrystalline Iron Films Grown on SiO<Subscript>2</Subscript>/Si(001)

The structure of polycrystalline Fe films grown on an oxidized Si(001) surface at room temperature has been studied by the technique of high-energy electron diffraction. It has been found that the grain orientation in the films depends of the amount of deposited iron. In Fe films less than 5 nm thick, grains have been found to be randomly oriented. Fe films more than 5 nm in thickness exhibit the (111) texture with an axis coinciding with the surface normal. The angular dispersion of the [111] direction in the Fe lattice from the surface normal is ±25°. It has been found that as the Fe films become thicker, the (111) texture changes to the (110) texture.