Thermal and optical study of semiconducting CNTs-doped nematic liquid crystalline material

We report the thermal and spectroscopic analysis of the carbon nanotubes (CNTs)-doped nematic liquid crystal (NLC) material. The CNTs have been oriented in the p-ethoxybenzylidene p-butylaniline NLC. The thermal study of the CNTs doped nematic mixtures shows a significant decrease in the isotropic to nematic phase transition temperature. However higher doping concentration of CNTs has led to the further increase in transition temperature. The UV-Visible spectroscopy has been attempted on the CNTs/NLC mixtures at room temperature. The investigated NLC present one absorption band corresponding to π–π* electronic transition. A red shift of λ_max with the increasing concentration of CNTs in the mixture has been observed. The band gap of NLC has been found to decrease after the doping of CNTs. The absorbance was measured for the UV light, polarized parallel and perpendicular to the LC director in the planar aligned cell.     

Metallic subwavelength structures for a broadband infrared absorption control

We present a method to control the absorption of a resonator by using a subwavelength structure consisting of thin metallic plates that behaves as a metamaterial film. We demonstrate the ability to tailor the conductivity of such a metallic subwavelength structure to achieve a resonator with the desired impedance matching for the mid-infrared range. This approach provides for broadband, as well as broad-angle, enhanced absorption. Theoretical analyses, as well as experimental results of the optical properties of a metallic NiCr structure at 8-12 microm spectral range are introduced.     

Fabrication of Fe/Fe<Subscript>3</Subscript>C-functionalized carbon nanotubes and their electromagnetic and microwave absorbing properties

Fe/Fe₃C-functionalized carbon nanotubes (CNTs) have been prepared by the floating catalyst chemical vapor-deposition method. It is demonstrated that the Fe and Fe₃C nanostructures are both encapsulated in the CNTs or decorated on the surface of CNTs. The Fe/Fe₃C content in the composites can easily be adjusted by changing the ferrocene concentration in the preparation. The electromagnetic properties of the CNTs have been evaluated in the frequency range of 2–18 GHz, and the nanocomposites exhibit excellent microwave absorbing performance. The CNT composites with higher Fe/Fe₃C content show enhanced microwave reflection losses. The significant influence of the Fe/Fe₃C nanostructures on the microwave absorption is realized by tuning the characteristic impedance of the nanocomposites. With increasing thickness, the maximum reflection loss peak shifts to lower frequency. The microwave absorbing performance of the composites is mainly caused by dielectric loss, resulting from the continuous CNT networks with excellent electrical conductivity.     

Superconductivity in thin films of boron-doped carbon nanotubes

Superconductivity in carbon nanotubes (CNTs) is attracting considerable attention. However, its correlation with carrier doping has not been reported. We report on the Meissner effect found in thin films consisting of assembled boron (B)-doped single-walled CNTs (B-SWNTs). We find that only B-SWNT films consisting of low boron concentration leads to evident Meissner effect with Tc=12 K and also that a highly homogeneous ensemble of the B-SWNTs is crucial. The first-principles electronic-structure study of the B-SWNTs strongly supports these results.     

Impedance-matched hyperlens

We propose an approach to optical imaging beyond the diffraction limit, based on transformation optics in concentric circular cylinder domains. The resulting systems allow image magnification and minimize reflection losses due to the impedance matching at the input or output boundaries. While perfect impedance matching at both surfaces can be obtained only in a system with radius-dependent magnetic permeability, we demonstrate that comparable performance can be achieved in an optimized nonmagnetic design.     

Conduction noise absorption by fiber-reinforced epoxy composites with carbon nanotubes

Nearly all electronic equipment is susceptible to malfunction as a result of electromagnetic interference. In this study, glass fiber, and carbon fiber as a type reinforcement and epoxy as a matrix material were used to fabricate composite materials. In an attempt to increase the conduction noise absorption, carbon nanotubes were grown on the surface of glass fibers and carbon fibers. A microstrip line with characteristic impedance of 50 Ω in connection with network analyzer was used to measure the conduction noise absorption. In comparing a glass fiber/epoxy composite with a GF-CNT/Ep composite, it was demonstrated that the CNTs significantly influence the noise absorption property mainly due to increase in electric conductivity. In the carbon fiber composites, however, the effectiveness of CNTs on the degree of electric conductivity is negligible, resulting in a small change in reflection and transmission of an electromagnetic wave.     

Structural and electronic properties of endohedral doped SWCNTs: A DFT study

The structural and electronic properties of semiconductors (Si and Ge) and metal (Au and Tl) atoms doped armchair (n, n) and zigzag (n, 0); n=4–6, single wall carbon nanotubes (SWCNTs) have been studied using an ab-initio method. We have considered a linear chain of dopant atoms inside CNTs of different diameters but of same length. We have studied variation of B.E./atom, ionization potential, electron affinity and HOMO–LUMO gap of doped armchair and zigzag CNTs with diameter and dopant type. For armchair undoped CNTs, the B.E./atom increases with the increase in diameter of the tubes. For Si, Ge and Tl doped CNTs, B.E./atom is maximum for (6, 6) CNT whereas for Au doped CNTs, it is maximum for (5, 5) CNTs. For pure CNTs, IP decreases slightly with increasing diameter whereas EA increases with diameter. The study of HOMO–LUMO gap shows that on doping metallic character of the armchair CNTs increases whereas for zigzag CNTs semiconducting character increases. In case of zigzag tubes only Si doped (5, 0), (6, 0) and Ge doped (6, 0) CNTs are stable. The IP and EA for doped zigzag CNTs remain almost independent of tube diameter and dopant type whereas for doped armchair CNTs, maximum IP and EA are observed for (5, 5) tube for all dopants.     

Wide bandwidth acoustic transmission via coiled-up metamaterial with impedance matching layers

Many acoustic metamaterials suffer from a narrow bandwidth transmission because of the impedance mismatch at the airmetamaterial interface. In this paper, a two-dimensional impedance-matched metamaterial with broadband transmission performance is investigated. The impedance matching layer is introduced for a gradient variation of effective impedance from the inlet of the unit to the outlet. The effective medium theory and corresponding effective model are used to explain the underlying mechanism. The improved energy transmission of our designs is demonstrated by experiment and numerical simulation within a broad frequency bandwidth over 6 kHz. Our impedance-matched design can be used to enhance sound absorption, which is expected to present improved acoustic performance in the applications of acoustic damper and muffler.     

High-performance double-sided absorber,based on metamaterial

We propose a double-sided metamaterial perfect absorber (MPA) at microwave frequencies, showing absorption of 96.8% at 8.45 GHz. By employing identical front metal-patterned layer for the backside of MPA, it presents the same performance for the incident wave from both sides. Minimization of the reflectance and the transmission, by matching the impedance of free space with that of the MPA and by increasing the imaginary part of refractive index, leads to high absorption. We demonstrated the absorption mechanism with the distribution of power loss and surface current at the absorption frequencies. The polarization-insensitivity was also achieved due to the symmetric pattern, and the influence of incident angle for the TE mode was also elucidated. These properties are expected to be used in practical applications such as communication device, sensing, and imaging.     

碳纳米管/寡聚胸腺嘧啶复合体系与汞离子作用的光谱研究

利用寡聚胸腺嘧啶核苷酸(PolyT)与碳纳米管(CNTs)之间的自发非共价修饰作用形成稳定的CNTs/PolyT纳米复合体系,采用共振光散射(RLS)和紫外-可见吸收光谱考察了该复合体系与汞离子的相互作用.实验结果表明,水相中单链PolyT能与CNTs形成稳定而均匀的分散体系,而单链Po1yT极易捕获汞离子生成特异性的...     

二甲基亚砜添加剂对聚合物太阳能电池性能的影响

研究了二甲基亚砜(DMSO)掺杂浓度对基于聚(3-己基噻吩)(P3HT)和(6,6)-苯基碳60丁酸甲酯(PCBM)为有源层的聚合物太阳能电池性能影响。结果表明,掺杂DMSO可以提高聚合物太阳能电池短路电流密度和填充因子。DMSO掺杂质量比为3%时,电池短路电流密度提高到7.88 mA·cm-2,填充因子为55.5%。能量转换效率达到2.54％,相比没有掺杂DMSO的电池,能量转换效率提高了17%。傅里叶变换红外光谱被用于鉴定和分析掺杂DMSO对材料P3HT∶PCBM化学性质的影响。傅里叶变换红外光谱表明,掺杂后P3HT和PCBM的化学性质都没有改变。为分析掺杂DMSO改善器件能量转换效率的原因,通过紫外-可见光谱和电流密度-电压特性曲线分别表征器件的光吸收能力以及电致发光器件的载流子迁移率。与P3HT∶PCBM薄膜相比,P3HT∶PCBM∶DMSO薄膜在可见光范围内的吸收峰有明显红移且吸收强度增强。可见光吸收的改善是实现短路电流密度提高的有力保障。太阳能电池性能的增强是因为DMSO的掺杂提高了P3HT∶PCBM的载流子迁移率和吸收光谱宽度。     

Theoretical investigation of hot electron cooling process in GaAs/AlAs cylindrical quantum wire under the influence of an intense electromagnetic wave

Hot electrons cooling by phonons in GaAs/AlAs cylindrical quantum wire (CQW), under the influence of an intense electromagnetic wave (EMW), is studied theoretically. Analytic expression for the electron cooling power (CP) is derived from the quantum transport equation for phonons, using the Hamiltonian of interacting electron–optical phonon system. Both photon absorption and emission processes are considered. Numerical results show that the CP reaches maximum when the energy difference between electronic subbands equals the energy of an optical phonon plus the photon energy. Under the influence of the EMW, the negative CP is observed showing that electrons gain energy from phonon and photon instead of losing their energy. Also, the CP increases with increasing the EMW amplitude. Our results theoretically clarify the mechanism of the electron cooling process by phonons in the GaAs/AlAs CQW under the EMW, which is of significance for designing and fabricating high-speed nanoelectronic devices based on this material.     

Plasma-assisted nitrogen doping of VACNTs for efficiently enhancing the supercapacitor performance

Nitrogen doping of vertically aligned carbon nanotubes (VACNTs) using plasma-enhanced chemical vapour deposition has been investigated to improve the supercapacitance performance of CNTs. Incorporating electrochemical measurements on the open-ended nitrogen-doped CNTs, showed the achievement of 6 times improvement in the capacitance value. For nitrogen-doped CNTs on silicon substrate, specific capacitance of 60 F g^?1 was obtained in 0.5 M KCl solution, with capacity retention ratio above 90 % after cycled at 0.1 A g^?1 for 5000 cycles. Using this sample, a symmetric supercapacitance was fabricated which showed the power density of 37.5 kW kg^?1. The facile fabrication approach and its excellent capacitance improvement, propose it as an efficient technique for enhancing the supercapacitance performance of the carbon-based electrodes.     

以UV胶为纤芯本底的CdSe/ZnS量子点光纤光致荧光光谱的传光特性

制备了一种以紫外（UV）固化胶为纤芯本底的CdSe/ZnS量子点掺杂光纤.通过测量不同掺杂浓度和光纤长度下的量子点光致荧光光谱,得到了荧光峰值强度与量子点掺杂光纤浓度和长度的关系,确定了UV胶纤芯本底下的量子点的吸收系数、合适的掺杂浓度和光纤长度.结果表明|UV胶在光纤中具有吸收小、收缩率低、与石英光纤包层折射率匹配、性能稳定等特点,是一种比较理想的实验室制备量子点光纤纤芯本底的材料.     

Au掺杂CNT吸附NO的第一性原理研究

碳纳米管(CNT)对于气体有超强的敏感性,可用于制备基于CNT的有害气体传感器.本文采用基于密度泛函理论的第一性原理研究Au掺杂CNT对NO和O_2的吸附特性.对吸附能、最终吸附距离、电荷转移量、态密度等的分析显示,Au掺杂使得CNT与NO间的交互作用明显增强,其中N原子端靠近CNT交互作用更强.禁带宽度和电荷密度分析表明,相比于NO分子中O原子端或者O2吸附,NO分子中N原子端与CNT发生交互作用会使体系导电性变化更为明显.说明Au掺杂能够很好地屏蔽空气中O_2对CNT导电性的影响,Au掺杂CNT作为NO气敏材料是可行的.     

Overcoming absorption saturation with doping in p-type quantum well infrared photodetectors: modeling and experiment

Bound-to-continuum normal-incidence absorption in p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) is strongest when the second light-hole (LH2) level is resonant with the top of the valence band QW. However, we found that such absorption saturates as a function of doping in the well. Using the envelope-function model (EFA), this paper shows that moving the LH2 resonance slightly deeper into the continuum avoids absorption saturation and produces optimal p-QWIP response. A suitable set of mid-IR samples was grown to test this conjecture and their photoresponse measured. The results indicate that absorption can be more than doubled through the use of the new p-QWIP designs. This result is explained by showing that the line of resonances in the continuum as a function of the in-plane wave vector eventually becomes a bound LH2 band in the well at some critical wave vector. Therefore, it is possible to avoid absorption saturation by matching this critical wave vector (i.e., well width and/or well depth) with the Fermi wave vector (i.e., doping in the well) for the desired QWIP (i.e., cutoff wavelength).     

Electronic properties of boron and nitrogen doped graphene nanoribbons and its application for graphene electronics

On the basis of density functional theory calculations, we have systematically investigated the electronic properties of armchair-edge graphene nanoribbons (GNRs) doped with boron (B) and nitrogen (N) atoms. B (N) atoms could effectively introduce holes (electrons) to GNRs and the system exhibits p- (n-) type semiconducting behavior after B (N) doping. According to the electronic structure calculations, Z-shape GNR-based field effect transistors (FETs) is constructed by selective doping with B or N atoms. Using first-principles quantum transport calculations, we demonstrate that the B-doped p-type GNR-FETs can exhibit high levels of performance, with high ON/OFF ratios and low subthreshold swing. Furthermore, the performance parameters of GNR-FETs could be controlled by the p-type semiconducting channel length.     

掺杂Si/SiO_2界面电子结构与光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理方法,在局域密度近似(LDA)下研究了B掺杂Si/SiO_2界面及其在压强作用下的电子结构和光学性质.能带的计算结果表明:掺杂前后Si/SiO_2界面均属于直隙半导体材料,但掺B后界面带隙由0. 74 eV减小为0. 57 eV,说明掺B使材料的金属性增强;对B掺杂Si/SiO_2界面施加正压强,发现随着压强不断增大,Si/SiO_2界面的带隙呈现了逐渐减小的趋势,并且由直隙逐渐转变为间隙.光学性质的计算结果表明:掺B对Si/SiO_2界面在低能区(即红外区)的介电函数虚部、吸收系数、折射率以及反射率等光学参数有显著影响,且在红外区出现新的吸收峰;对B掺杂Si/SiO_2界面施加正压强,随着压强增大,红外区的吸收峰逐渐消失,而在紫外区出现了吸收峰.上述结果表明,对Si/SiO_2界面掺B及施加正压强均可调控Si/SiO_2界面的电子结构与光学性质.本文的研究为基于Si/SiO_2界面的光电器件研究与设计提供一定的理论参考.     

Causal impedance matching for broadband hybrid noise absorption

The complementary strengths and weaknesses of passive and active noise control (ANC) methods have motivated many researchers to develop hybrid noise absorbers that integrate both control strategies. The impedance matching technique (IMT) is the most effective for such a purpose. An unsolved problem with available IMT schemes is the a priori reference signal that limits IMT applications. This study proposes the use of the forward wave, available by the two-microphone method, as the reference signal. Due to inevitable errors in wave separation and inlet reflection of the control signal, the absorber becomes a feedback system. A simple and stable ANC is developed for impedance matching without the a priori reference signal. The proposed absorber has an absorption coefficient of 0.9 or above in a frequency range of 60-850 Hz. It is stable in the presence of sensor mismatch and robust with respect to significant variation of inlet boundary conditions.     

High-Frequency Gravitational Waves in Electromagnetic Waveguides

The interaction between a very-high-frequency gravitational wave (VHFGW) and an electromagnetic wave (EMW) in a rectangular waveguide is discussed in the weak field limit. The background EMW is assumed to be initially in the TE₁₀ mode along the waveguide. It is then shown that a VHFGW, having the same frequency and direction of propagation of the EMW, induces through the waveguide a TE mode with a frequency doubled when compared to the original EMW frequency. In that respect, the GW acts similar to a non-linear medium, giving rise to a Second Harmonic Generation (SHG) effect.