转角双层石墨烯在应变下的光电导率

理论研究了转角双层石墨烯在施加不同单轴应变下的能带结构和光电导率,用连续模型分别计算了转角为1.05°和1.47°的转角双层石墨烯在应变下的能带、态密度以及光电导率,发现这些量随应变的变化是连续且显著的.通过对能带的分析以及光电导率的测量能够获得应变对平带产生的实际影响,这为今后实验对应变与平带的研究打下基础;此外样品往往受到具有空间不均匀性的应变作用,测量其局域的光电导率便能够估计应变的空间分布大小;同时应变对能带的调制为原位调控转角双层石墨烯的强关联、拓扑以及量子效应提供了思路.     

外尔半金属及其输运特性

外尔半金属是继石墨烯以及拓扑绝缘体之后的又一个研究热点。相比于后两者,外尔半金 属独特的三维无能隙线性色散能带结构使得它有很多奇特的性质,如：手性反常、手性磁效应、 反弱局域化、手性朗道能级和负磁阻效应等。实际样品中无序总是不可避免的,所以考虑无序对 体系的影响是很有必要的。我们回顾了无序下第一类以及第二类外尔半金属的相变特性,并获得 了完整的相图,这些无序诱导的相变丰富了拓扑安德森绝缘体和安德森金属绝缘体相变的物理内 涵。我们同样回顾了长程短程无序影响下的第一类外尔半金属体系的输运,发现了一种不能采用 玻尔兹曼输运方程来描述的输运过程。我们介绍Imbert-Fedorov 位移这一光学中的效应在外尔 半金属中的实现,这为更好地应用外尔半金属提供了更多的可能性,随后采用波包散射,我们解 释了外尔半金属中的超高载流子迁移率问题的原因,最后我们给出一个简要的总结。     

无序双层六角氮化硼量子薄膜的电子性质

基于安德森紧束缚模型,本文研究了无序双层六角氮化硼量子薄膜的电子性质. 数值计算结果表明在双层都无序掺杂的情况下,六角氮化硼量子薄膜的电子是局域的, 其表现为绝缘体性质;而对于单层掺杂(无论是氮原子还是硼原子)的双层六角氮化硼量子薄膜, 在能谱的带尾出现了持续的迁移率边.这就说明在单层掺杂的双层六角氮化硼量子薄膜中产生了 金属绝缘体转变.这一结果证实了有序-无序分区掺杂的理论模型,为理解及调控双层六角氮化硼量子薄膜 的电子性质提供了有益的理论指导.     

无序效应对1T-TaS_2材料中Mott绝缘相的影响

电子强关联效应使得过渡金属硫化物1T-TaS_2在低温时为Mott绝缘体,而层间堆叠错位及杂质又会引入相当强的无序效应.利用统计动力学平均场理论数值方法研究了无序效应对Mott绝缘相的影响,发现非对角跃迁无序和对角无序效应均不会引起从绝缘体到金属的相变.杂质引入的对角无序达到一定强度后Mott能隙会完全闭合,而堆叠错位引入的非对角跃迁无序不论多强都无法关闭Mott能隙.在半满情况,非对角无序会导致上下Hubard带对称地分别出现一个奇异态,而通过晶格尺寸标度研究证明了这种反常的电子态仍然是Anderson局域态.     

电子型超导体Gd掺杂的输运性质研究

在CuO_2平面以外的阳离子格点通过改变Gd含量引入了无序.研究了Nd_(1.85-x)Gd_xCe_(0.15)CuO_4单晶的电阻率ρ、霍耳系数R_H和热电势S.霍耳系数R_H的测量证明这种名义掺杂的改变并没有明显改变载流子的密度.热电势S(T)在120 K以上可用一个掺杂的半经验模型来分析,结果表明存在电子的窄能带和宽能带的共存.无论是电子态密度的带宽和有效电导率的带宽都随着x增加,而局域化的趋势随Gd掺杂增加明显增强.Gd掺杂对超导转变温度T_C的抑制作用很显著.在二维剩余电阻率ρ02D增加超过临界值h/4e~2时没有发生超导-绝缘体转变,观察到的却是超导和局域化的共存效应.量子干涉效应不可以定性地解释Gd掺杂对于电子型超导体的超导转变温度T_c的抑制.     

准一维三平行链无序系统电子结构

利用负本征值理论计算方法,重点计算出准一维平行三链无序系统的电子态密度,对比研究了一维单链、准一维双链的情况.在对角无序、非对角无序条件下,具体探讨了电子结构、局域化形成、系统能量分布及维数效应等问题.研究表明,对角无序主要引起电子局域态的增多,非对角无序则使系统的能量分布范围发生变化;通过对一维到带状系统电子结构变化的研究,观察到在相同条件下,从一维到带状系统,电子态密度的峰值数目在增加,而电子态密度为零的能量区间减少,体现出电子能带结构的维数效应.     

轨道选择性相变——多轨道物理中一类独特的现象

金属—绝缘体相变是凝聚态物理中被大量研究并有广泛应用前景的一种物理现象。通常具有巡游性的电子由于受到各种因素(如无序或电子相互作用等)的影响发生局域化,从而形成了金属—绝缘体相变。然而在实际材料中,由于电子还具有轨道属性而使该相变的发生变得更加复杂。文章简要回顾了一类考虑电子轨道自由度后发生的较为特殊的金属—绝缘体相变——轨道选择性相变,即由于电子相互作用的影响而在同一原子壳层中出现局域化的电子和巡游电子共存的现象,并讨论了其形成机理和相关的实验。     

基于一维随机硅光栅的石墨烯表面等离子体安德森局域

提出了一种中红外波段下探究表面等离子体在石墨烯与硅光栅混合结构中传输安德森局域的方法.在石墨烯片下设计一维随机硅光栅结构来实现石墨烯表面等离子体随机硅光栅.通过调节石墨烯的费米能级来改变由硅光栅的无序引起的石墨烯表面等离子体安德森局域的共振波长.当费米能级是0.6eV时,局域石墨烯表面等离子体在随机硅光栅结构中的场强强度比在周期性硅光栅结构中大70倍.该结构有望应用于可调集成滤波器,宽带调制器以及等离子体传感器等.     

从“魔角”石墨烯到摩尔超晶格量子模拟器

自从魔角石墨烯在实验上被证实以来,转角摩尔超晶格体系中存在的关联绝缘态和超导态吸引了大批科学家的目光,并发展出了一门新的科学分支—转角电子学.本文主要综述了最近转角摩尔超晶格体系在实验上的发展,包括转角双层石墨烯(TBG)、转角双层-双层石墨烯(TDBG)以及其他二维摩尔超晶格体系,并简单介绍了摩尔超晶格量子模拟器的概念.其中实验里浮现的关联绝缘态、超导态、以及铁磁态几乎囊括了近代凝聚态物理的几大热门话题,同时,逐步发展的二维摩尔超晶格量子模拟器研究也似乎有可能为强关联量子多体体系寻找一个突破口.     

半导体电子态理论简介(Ⅲ)

四、非晶态半导体 非晶态半导体属于无序系统的物质.无序系统包括固溶体、非晶体、准晶体等,它们都不存在晶体的平移对称性.固溶体的特点是结构有序、组分无序.非晶体的特点是短程有序,长程(结构)无序.准晶体的特点是短程有序,长程部分有序,有点群对称性但无平移对称性、无序的分布都是随机的.与有序系统相比,无序系统有一些新的特点,例如局域化. 关于局域化问题,常用紧束缚方法来讨论,哈密顿量其中　　是原子态　的能量,V是原子间的相互作用能量.对于晶体,　　是常数.如果晶体是三维简单立方,则它的能带(取　　=0)为态密度如图 11(a)所示,…     

Disorder driven superconductor-insulator transition in inhomogenous d-wave superconductor

We study the effect of disorder on the superconductor-insulator transition in an inhomogeneous d-wave superconductor using the kernel polynomial method. As the Bogoliubov-de Gennes equations of the two-dimensional square lattice are solved self-consistently for the cases with more than 100000 unit cells, it is possible to observe the spatial fluctuations of the superconducting order parameters at the nanoscale. We find that strong spatial fluctuation of the superconducting order parameters can be introduced by disorder, and some superconducting specific order parameters are even enhanced. Moreover, we find that some isolated superconducting "islands" can survive the strong disorder, giving a boson insulator with some localized Cooper pairs. Our numerical calculations predict the existence of two sequential transitions with the increasing disorder strength: a d-wave to s-wave superconductor transition, and then an s-wave superconductor to insulator transition. The possibility of the appearance of a metallic phase between the superconducting and insulating phases is excluded by performing the lattice-size scaling of the generalized inverse participation ratio. In addition, we also discuss the effect of disorder on the optical conductivity of the d-wave superconductors.     

Optical properties of gapped graphene structure driven by electron electron interaction

We analyze the effects of on-site electronic coulomb repulsion U on the optical absorption and density of states of a graphene like structure with two different sublattice on-site energies in the context of Hubbard model. Mean field approximation has been implemented in order to find excitation spectrum of electronic system. Antiferromagnetic long range ordering has been considered as the ground state of model Hamiltonian. We find that the band gap in both optical conductivity and density of states decreases with strength of coulombic interaction. The absorption spectra of the graphene like structure as a nanoscale system exhibit the prominent peaks, mainly owing to the divergent density of states and excitonic effects.     

Robust transport properties in graphene

Two-dimensional Dirac fermions are used to discuss quasiparticles in graphene in the presence of impurity scattering. Transport properties are completely dominated by diffusion. This may explain why recent experiments did not find weak localization in graphene. The diffusion coefficient of the quasiparticles decreases strongly with increasing strength of disorder. Using the Kubo formalism, however, we find a robust minimal conductivity that is independent of disorder. This is a consequence of the fact that the change of the diffusion coefficient is fully compensated by a change of the number of delocalized quasiparticle states.     

Temperature effect on plasmon dispersions in double-layer graphene systems

We investigate the plasmon dispersion relation and damping rate of a double-layer graphene system consisting of two separated monolayer graphenes with no interlayer tunneling at finite temperature. We use the temperature dependent RPA dielectric function which is valid for graphene systems to obtain the plasmon frequencies and damping rates at different temperatures, interlayer correlation parameters and electron densities and then compare them with those obtained from the zero temperature calculations. Our results show that by increasing the temperature, the plasmon frequencies decrease and the decay rate increases. Furthermore, we find that the behavior of a double-layer graphene system at small and large correlation parameters is different from the conventional double-layer two-dimensional electron gas system. Finally, we obtain that in a density imbalanced double-layer graphene system, the acoustic plasmons are more affected by temperature than the equal electron densities one.     

Theory of 2D transport in graphene for correlated disorder

We theoretically revisit graphene transport properties as a function of carrier density, taking into account possible correlations in the spatial distribution of the Coulomb impurity disorder in the environment. We find that the charged impurity correlations give rise to a density-dependent graphene conductivity, which agrees well qualitatively with the existing experimental data. We also find, quite unexpectedly, that the conductivity could increase with increasing impurity density if there is sufficient interimpurity correlation present in the system. In particular, the linearity (sublinearity) of graphene conductivity at lower (higher) gate voltage is naturally explained as arising solely from impurity correlation effects in the Coulomb disorder.     

Coulomb interaction, ripples, and the minimal conductivity of graphene

We argue that the unscreened Coulomb interaction in graphene provides a positive, universal, and logarithmic correction to scaling of zero-temperature conductivity with frequency. The combined effect of the disorder due to wrinkling of the graphene sheet and the long-range electron-electron interactions is a finite positive contribution to the dc conductivity. This contribution is disorder strength dependent and thus nonuniversal. The low-energy behavior of such a system is governed by the line of fixed points at which both the interaction and disorder are finite, and the density of states is exactly linear. An estimate of the typical random vector potential representing ripples in graphene brings the theoretical value of the minimal conductivity into the vicinity of 4e2/h.     

Helical states around a mass-inverted quantum dot in graphene

Topologically protected helical states at a mass-inverted quantum dot in graphene are studied by analyzing both tight-binding and kernel polynomial method calculations. The mass-inverted quantum dot is introduced by considering a heterojunction between two different mass domains, which is similar to the domain wall in bilayer graphene. The numerical results show emergent metallic channels across the mass gap when the signs of the mass terms are opposite. The eigenstates of the metallic channels are revealed to be doubly degenerate—each state propagates along opposite directions, maintaining the time-reversal symmetry of graphene. The robustness of the metallic channels is further examined, concluding with the fact that helical states are secured unless atomic vacancies form near the domain wall. Such helical states circulating along the topological defects may pave a novel route to engineering topological states based on graphene.     

Probing the electronic structure and optical response of a graphene quantum disk supported on monolayer graphene

In this paper, we show that a graphene quantum disk (GQD) can be generated on monolayer graphene via structural modification using the electron beam. The electronic structure and local optical responses of the GQD, supported on monolayer graphene, were probed with electron energy-loss spectrum imaging on an aberration-corrected scanning transmission electron microscope. We observe that for small GQD, ~1.3 nm in diameter, the electronic structure and optical response are governed by the dominating edge states, and are distinctly different from either monolayer graphene or double-layer graphene. Highly localized plasmon modes are generated at the GQD due to the confinement from the edge of the GQD in all directions. The highly localized optical response from GQDs could find use in designing nanoscale optoelectronic and plasmonic devices based on monolayer graphene.     

势能模型对石墨烯导热性质分子动力学模拟的影响

针对常用的Tersoff势、Rebo势和Airebo势,系统性地分析势能模型对分子动力学模拟计算石墨烯色散关系、声子态密度、群速度和热导率的影响. 结果表明：Rebo势和Airebo势描述的声子色散关系接近实验值,Airebo势对应的声子态密度与第一性原理计算的结果较为符合,Rebo势和Airebo势计算的Γ点处声子群速度高于Tersoff势. 采用Airebo势得到石墨烯热导率约为1 150 W·（m·K）^-1,与实验值相近. 综合各种影响,相比于Tersoff势和Rebo势,Airebo势能模型更适合计算石墨烯的导热性质.     

Low-field carrier transport properties in biased bilayer graphene

Based on a semiclassical Boltzmann transport equation in random phase approximation, we develop a theoretical model to understand low-field carrier transport in biased bilayer graphene, which takes into account the charged impurity scattering, acoustic phonon scattering, and surface polar phonon scattering as three main scattering mechanisms. The surface polar optical phonon scattering of carriers in supported bilayer graphene is thoroughly studied using the Rode iteration method. By considering the metal–BLG contact resistance as the only one free fitting parameter, we find that the carrier density dependence of the calculated total conductivity agrees well with that observed in experiment under different temperatures. The conductivity results also suggest that in high carrier density range, the metal–BLG contact resistance can be a significant factor in determining the BLG conductivity at low temperature, and both acoustic phonon scattering and surface polar phonon scattering play important roles at higher temperature, especially for BLG samples with a low doping concentration, which can compete with charged impurity scattering.