Controlling Factors of the Electric Field at the Triple Junction

The metal-dielectric-vacuum junction is defned as the triple junction owned enhanced electric field, thus this special region is regarded as the location where primary electrons emission is favored. For electron emission, triple junction could affect both the flashover breakdown of insulators and the electron emission property of ferroelectrie cathodes. In this study, we theoretically investigate the electric field enhancement in the triple-junction region. It is found that the key parameter to determine the field enhancement is the taper angle of the electrode and the relative permittivity of the dielectric. In addition, we first deduce the accurate expression of the electric field in this special region. The controlling parameters for determining the field enhancement are discussed in detail. We also discover the way to reduce the electric field of this region through simulation. The current analysis would be useful for both the electron emission enhancement and the issue of flashover breakdown.     

Positron-Impact Ionization of Atomic Hydrogen in a Bichromatic Laser Field in the Second Born Approximation

The positron impact-ionization of atomic hydrogen in the presence of a linearly polarized bichromatic field is investigated in the second Born approximation. The field is composed of a fundamental frequency and its second harmonic. The state of positron in the field is described by the Volkov wavefunction, and the continuum state of the ejected electron is described by the Coulomb—Volkov wavefunction. The dressed ground state of target is a first order time-dependent perturbative wavefunction. The triple differential cross sections and their dependencies on laser field parameters are discussed. Numerical results demonstrate that the second-order effect plays a crucial role in understanding the laser-assisted positron scattering process.     

Resonant Acceleration of Electrons in Combined Self-Consistent Quasistatic Electromagnetic Fields and Intense Laser Fields

Using the single electron model, the acceleration of electrons in combined circularly polarized intense laser fields and the spontaneous quasistatic fields （including axial and azimuthal magnetic fields, the axial and transverse electric fields） produced in intense laser plasma interaction is investigated analytically and numerically by fitting the proper parameters of the quasistatic fields based on the data from the experiment and numerical calculation. A new resonant condition is given. It is found that the resonance acceleration of electron depends not only on laser field, but also on the bounce frequency oscillating in the quasistatic magnetic field and electric field. The net energy gained by electron does not increase monotonously with axial electric field, but there are some optimal axial electric fields.     

Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor

We simulate the current-voltage （I-V） characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） with different gate lengths using the quasi-two-dimensional （quasi-2D） model. The calculation results obtained using the modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas （213EG） with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFETs at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases.     

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AIN/GaN heterostructure field-effect transistors

By making use of the quasi-two-dimensional （quasi-2D） model, the current-voltage （l-V） characteristics of In0AsA10.82N/A1N/GaN heterostructure field-effect transistors （HFETs） with different gate lengths are simulated based on the measured capacitance-voltage （C-V） characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas （2DEG） with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V.s for the prepared In0.38AI0.82N/A1N/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.     

Electron-Helium Scattering in Free-Free Transitions in a Bichromatic Laser Field

Theoretical calculation of the differential cross section （DCS） for elastic electron-helium scattering in the presence of a bichromatic CO2 laser field is carried out in the first Born approximation with a simple screening electric potential. The two components of the laser field have the frequencies w and 2w, which are out of phase by an arbitrary scale φ. The variations of the differential cross section as a function of the phase angle φ in the domain 0°≤ φ ≤360° are presented. We discuss the influence of the number of photons exchanged on the phase-dependee effect. Moreover, for different scattering angles and incident electron energies, the DCS has outstanding ditferences. These illustrate that the two parameters have important effects on the differential cross section and the screening electric potential is effective.     

Electron localization of H_2~+ in a dc electric field

A dc electric field is utilized to steer the electron motion after the molecular ion H_2~+ is excited by an ultrashort ultraviolet laser pulse. The numerical simulation shows that the electron localization distribution and the dissociation control ratio are dependent on the polarization direction and amplitude of the dc electric field. Most electrons of the dissociation state move opposite to the dc electric field and stabilize at the dressed-up potential well, for the dressed-down well is occupied by the electrons of the 1 sσ_g state.     

A New Model Potential Acting on the Excited Electron Within Molecules： Application to Calculate the Recurrence Spectra of Excited H2 Molecules in Strong External Fields

By using the molecular orbit theory, we give a new model potential acting on the excited electron within a molecule. The potential is the total interaction energy of this electron with all the nuclei and other electrons.We find that the introduction of a new model potential results in an extreme increase of the number of closed orbits as compared to the hydrogen atom. Making use of the molecular closed-orbit theory (MCOT) and the new model potential, we calculate the recurrence spectra of H2 molecules in parallel electric and magnetic fields for different quantum defects. The modulations in the spectra can be analysed in terms of the scattering of the excited electron on the molecular core. Our results are in good agreement with the quantum results.     

A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

In this paper, we present a two-dimensional （2D） fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor （FP-HEMT） on the basis of 2D Poisson＇s solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, A1GaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco-Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc.     

Molecular properties and potential energy function model of BH under external electric field

Using the density functional B3P86/cc-PV5Z method, the geometric structure of BH molecule under different external electric fields is optimized, and the bond lengths, dipole moments, vibration frequencies, and other physical properties parameters are obtained. On the basis of setting appropriate parameters, scanning single point energies are obtained by the same method and the potential energy curves under different external fields are also obtained. These results show that the physical property parameters and potential energy curves may change with external electric field, especially in the case of reverse direction electric field. The potential energy function without external electric field is fitted by Morse potential, and the fitting parameters are obtained which are in good agreement with experimental values. In order to obtain the critical dissociation electric parameter, the dipole approximation is adopted to construct a potential model fitting the corresponding potential energy curve of the external electric field. It is found that the fitted critical dissociation electric parameter is consistent with numerical calculation, so that the constructed model is reliable and accurate. These results will provide important theoretical and experimental reference for further studying the molecular spectrum, dynamics, and molecular cooling with Stark effect.     

Electric field gradient for interstitial positive muons in fcc metals: An AB Initio calculation of size effect

The electric field gradients (EFGs) resulting from interstitial point defects in fcc metals have been investigated. The defect induced charge density, used to evaluate the valence effect EFG, is calculated self-consistently in the density functional formalism. An ab initio calculation of the size effect EFG is carried out for a positive muon at an octahedral site in the fcc lattice in the elastic continuum model. The components of the strain field tensor are evaluated assuming the lattice of dressed point ions interacting through the screened Coulomb potential. No adjustable parameter has been used. The theoretical results are in good agreement with the experimental values within experimental uncertainties. It is emphasized that both the strain and conduction electron contributions are equally important in the estimation of the electric field gradient.     

Electron localization of linear symmetric molecular ion H_3~(2+)

Electron localization in the dissociation of the symmetric linear molecular ion H_3~(2+) is investigated. The numerical simulation shows that the electron localization distribution is dependent on the central frequency and peak electric field amplitude of the external ultrashort ultraviolet laser pulse. When the electrons of the ground state are excited onto the 2pσ~2Σ_u~+ by a one-photon process, most electrons of the dissociation states are localized at the protons on both sides symmetrically. Almost no electron is stabilized at the middle proton due to the odd symmetry of the wave function. With the increase of the frequency of the external ultraviolet laser pulse, the electron localization ratio of the middle proton increases, for more electrons of the ground state are excited onto the higher 3pσ~2Σ_u~+ ustate. 50.9% electrons of all the dissociation events can be captured by the middle Coulomb potential well through optimizing the central frequency and peak electric field amplitude of the ultraviolet laser pulse. Besides, a direct current(DC) electric field can be utilized to control the electron motions of the dissociation states after the excitation of an ultraviolet laser pulse, and 68.8% electrons of the dissociation states can be controlled into the middle proton.     

Ionization and stabilization of a three-dimensional system with a short-range potential in a strong laser field

The interaction of a three-dimensional atomic system in a short-range potential with intense laser radiation is investigated by the direct numerical integration of the nonstationary Schrödinger equation. The calculations helped to discover a stabilization regime, which is interpreted as a result of forming a Kramers-Henneberger atom “dressed” in a field. Dynamics of the energy spectrum of photoelectrons depending on the increase of the laser field intensity is investigated, and conditions of a photodetachment of an electron from a bound state of the Kramers-Henneberger potential are analyzed. These results reveal specific features of the stabilization process of the three-dimensional system with a short-range potential compared to the similar process in a system with a long-range (Coulomb) potential.     

Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure and applied electric field

Using the effective mass and parabolic band approximations and a variational procedure we have calculated the combined effects of intense laser radiation, hydrostatic pressure, and applied electric field on shallow-donor impurity confined in cylindrical-shaped single and double GaAs-Ga_1−xAl_xAs QD. Several impurity positions and inputs of the heterostructure dimensions, hydrostatic pressure, and applied electric field have been considered. The laser effects have been introduced by a perturbative scheme in which the Coulomb and the barrier potentials are modified to obtain dressed potentials. Our findings suggest that (1) for on-center impurities in single QD the binding energy is a decreasing function of the dressing parameter and for small dot dimensions of the structures (lengths and radius) the binding energy is more sensitive to the dressing parameter, (2) the binding energy is an increasing/decreasing function of the hydrostatic pressure/applied electric field, (3) the effects of the intense laser field and applied electric field on the binding energy are dominant over the hydrostatic pressure effects, (4) in vertically coupled QD the binding energy for donor impurity located in the barrier region is smaller than for impurities in the well regions and can be strongly modified by the laser radiation, and finally (5) in asymmetrical double QD heterostructures the binding energy as a function of the impurity positions follows a similar behavior to the observed for the amplitude of probability of the noncorrelated electron wave function.     

The Study of “Coulomb Asymmetry” in an Elliptically Polarized Laser Field

Due to the effect of Coulomb potential, the angular distribution of electron ionized in an elliptically polarized field presents an asymmetric structure, which is called "Coulomb asymmetry". In this paper, we study how to modulate the asymmetric degree of the electron angular distribution by using a semi-classical simplified tunneling model. It is found that the asymmetric structure is easily affected by three parameters:the ionization potential, the laser ellipticity, and the laser wavelength. However, the laser intensity has little effect on the asymmetric structure. To explain these phenomena we have derived an analytical formula, which clearly demonstrates the relationship between the asymmetric degree and these parameters. Moreover, we find that in elliptically polarized laser field only those electrons that are released in a certain narrow window of initial field phase are greatly effected by the Coulomb potential and play the key role in the formation of asymmetric structure. This study provides some reference values in the development of attoclock technique, which can be used to probe the tunneling process.     

The Study of “Coulomb Asymmetry” in an Elliptically Polarized Laser Field

Due to the effect of Coulomb potential, the angular distribution of electron ionized in an elliptically polarized field presents an asymmetric structure, which is called "Coulomb asymmetry". In this paper, we study how to modulate the asymmetric degree of the electron angular distribution by using a semi-classical simplified tunneling model. It is found that the asymmetric structure is easily affected by three parameters: the ionization potential, the laser ellipticity,and the laser wavelength. However, the laser intensity has little effect on the asymmetric structure. To explain these phenomena we have derived an analytical formula, which clearly demonstrates the relationship between the asymmetric degree and these parameters. Moreover, we find that in elliptically polarized laser field only those electrons that are released in a certain narrow window of initial field phase are greatly effected by the Coulomb potential and play the key role in the formation of asymmetric structure. This study provides some reference values in the development of attoclock technique, which can be used to probe the tunneling process.     

On the feasibility of the coulomb explosion of a metal

The mechanism of the Coulomb explosion of a metal in an external pulsed electric field is discussed. In the case of a low-frequency field, when its frequency is lower than the frequency of electron collisions, it is impossible to reach the conditions of the Coulomb explosion of a metal if the field pulse duration is shorter than the time of electron energy relaxation upon elastic collisions, and the electron temperature is well above the Fermi energy and the work function. In the case of a high-frequency field, e.g., in a powerful pulse of ultraviolet laser radiation, the Coulomb explosion can occur if the field strength is well above the intraatomic field strength (i.e., when the laser power density is ≥10¹⁹ W/cm²).     

Comparative analysis of the strong-field ionization of a quantum system with the Coulomb and short-range potentials

The dynamics of a hydrogen atom and a 3D model quantum system with a short-range potential is investigated using the direct numerical integration of the nonstationary Schrödinger equation in a wide range of laser intensities and frequencies. The simulation data are compared with the predictions of variants of the Keldysh-type theories. It is demonstrated that, in the low-frequency (tunnel) limit, the ionization rates of the systems with the Coulomb and short-range potentials and the same values of the ionization potential significantly differ from each other whereas, in the high-frequency (single-photon) limit, we do not observe a substantial difference between the ionization rates. Specific features of the angular distribution of the photoelectron emission and the photoelectron energy spectra are investigated in detail. In addition, the ionization suppression is studied for both Coulomb- and short-range-potential atoms. The stabilization is due to the dramatic reconstruction of the atom in the presence of a strong laser field and the formation of a new system (Kramers-Henneberger atom) that exhibits an increasing resistance to the ionization upon an increase in the laser intensity. In the two-photon ionization regime, the stabilization phenomenon is substantially more pronounced for the system with the Coulomb potential. This results from the effective excitation of the Rydberg states of the dressed atom in the strong-field limit.     

强激光场中模型氢原子和真实氢原子产生高次谐波的比较

通过数值求解原子在强激光场中的含时薛定谔方程,研究了有库仑奇点和无库仑奇点的一维模型氢原子和三维真实氢原子产生高次谐波的特性。结果表明,有库仑奇点和无库仑奇点的一维模型氢原子和三维真实氢原子产生高次谐波的截止位置相同,但是高次谐波强度变化特征明显不同,进一步的研究表明,无库仑奇点的模型氢原子产生的高次谐波谱相对变化趋势与三维真实氢原子的高次谐波谱变化趋势是完全一致的。     

强激光场中模型氢原子和真实氢原子产生高次谐波的比较

通过数值求解原子在强激光场中的含时薛定谔方程,研究了有库仑奇点和无库仑奇点的一维模型氢原子和三维真实氢原子产生高次谐波的特性.结果表明,有库仑奇点和无库仑奇点的一维模型氢原子和三维真实氢原子产生高次谐波的截止位置相同,但是高次谐波强度变化特征明显不同,进一步的研究表明,无库仑奇点的模型氢原子产生的高次谐波谱相对变化趋势与三维真实氢原子的高次谐波谱变化趋势是完全一致的.