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1.
A set of Al/AlN multilayers with various modulation periods were prepared using DC magnetron sputtering method. Low angle X-ray diffraction (LAXRD) was used to analyze the layered structure of multilayers. The phase structure of the films was investigated with grazing angle X-ray diffraction (GAXRD). LAXRD results indicate that well-defined multilayer modulation structures are formed for the relatively larger modulation periods. However, the loss of mutilayered structure is detected in the multilayer with low modulation period. A very wide amorphous peak is observed in multilayer with modulation period of 4 nm. The multilayers show obvious crystallization at larger modulation periods, however, the diffraction peaks are much wider than the Al single layer because of the interruption of the continuous columnar grain growth by alternating deposition processes. Nanoindentation experiments were performed to study the mechanical properties as a function of multilayer modulation period. It is found that the hardness of the multilayers is greater than the hardness calculated from rule of mixtures. With the modulation periods adjusted, the multilayers are even harder than its hard component (AlN). A maximum hardness of 24.9 GPa, about 1.9 times larger than its hard component (AlN) and 3.7 times larger than the hardness calculated from the rule of mixtures, is found at the multilayer with modulation period of 16 nm. The wear test results show that the multilayers possess lower and stable friction coefficient, and superior wear properties.  相似文献   

2.
Mirror-like and pit-free non-polar a-plane (1 1 −2 0) GaN films are grown on r-plane (1 −1 0 2) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) with multilayer high-low-high temperature AlN buffer layers. The buffer layer structure and film quality are essential to the growth of a flat, crack-free and pit-free a-plane GaN film. The multilayer AlN buffer structure includes a thin low-temperature-deposited AlN (LT-AlN) layer inserted into the high-temperature-deposited AlN (HT-AlN) layer. The results demonstrate that the multilayer AlN buffer structure can improve the surface morphology of the upper a-plane GaN film. The grown multilayer AlN buffer structure reduced the tensile stress on the AlN buffer layers and increased the compressive stress on the a-plane GaN film. The multilayer AlN buffer structure markedly improves the surface morphology of the a-plane GaN film, as revealed by scanning electron microscopy. The effects of various growth V/III ratios was investigated to obtain a-plane GaN films with better surface morphology. The mean roughness of the surface was 1.02 nm, as revealed by atomic force microscopy. Accordingly, the multilayer AlN buffer structure improves the surface morphology and facilitates the complete coalescence of the a-plane GaN layer.  相似文献   

3.
AlN/BN纳米结构多层膜微结构及力学性能   总被引:2,自引:0,他引:2       下载免费PDF全文
喻利花  董师润  许俊华 《物理学报》2008,57(12):7776-7782
用射频磁控溅射法制备了AlN,BN单层膜及AlN/BN纳米多层膜.采用X射线衍射仪、高分辨率透射电子显微镜和纳米压痕仪对薄膜结构进行表征.分析表明:单层膜AlN为w-AlN结构,BN为非晶相.AlN/BN多层膜中BN的结构与BN层厚有关.当BN层厚小于0.55nm时,由于AlN层模板的作用,BN发生了外延生长,BN与AlN的结构相同;当BN层厚大于0.74nm时,BN为非晶.AlN/BN多层膜的硬度也与BN层的厚度有关.当BN层厚为1—2个分子层时,AlN/BN多层膜具有超硬效应;当BN层厚增加到0.74 关键词: AlN/BN多层膜 BN结构 超硬效应  相似文献   

4.
Effects of ZnS:Mn/AlN multilayer structure on luminescent properties of nanostructured (NS) thin-film electroluminescent (TFEL) device of which emission layer is a multilayer composed with ZnS:Mn layers and 0.7-nm-thick AlN interlayers were studied. The bandgap widening and the increased PL efficiency of Mn2+ 3d-3d transitions with a decrease in the ZnS:Mn single-layer thickness down to 5 nm were observed, which is ascribed to quantum confinement effects. Meanwhile, the multilayer with 2-nm-thick ZnS:Mn single-layers shows a drop of PL efficiency, indicating the presence of defective region just on AlN. The tendency of the luminous efficiency of the NS-TFEL device against the ZnS:Mn single-layer thickness is similar to the tendency found in the PL efficiency, indicating the importance of the ZnS:Mn/AlN interface for the device performance.  相似文献   

5.
Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates. The effects of AlN interfacial layer on the electrical properties were investigated. At 300 K, high two-dimensional electron gas (2DEG) density of 1.66 × 1013 cm−2 and high electron mobility of 1346 cm2 V−1 s−1 were obtained for the high Al content HEMT structure with a 1 nm AlN interfacial layer, consistent with the low average sheet resistance of 287 Ω/sq. The comparison of HEMT wafers with and without AlN interfacial layer shows that high Al content AlGaN/AlN/GaN heterostructures are potential in improving the electrical properties of HEMT structures and the device performances.  相似文献   

6.
ZnO properties were investigated as a function of AlN buffer layer thickness (0–100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.  相似文献   

7.
Theoretical calculations via a transfer matrix method (TMM) were performed to investigate the possibility of fullerene/AlN multilayer films acting as one-dimensional (1D) photonic band gap (PBG) crystals. The response within and out of the periodic plane of (C60, C70)/AlN multilayers was studied. (C60, C70)/AlN multilayer films presented incomplete PBG behavior in UV region. C60/AlN multilayers with two pairs of 49 nm-C60 and 21 nm-AlN layers exhibited a high reflectivity of 90.4% at a wavelength of about 200 nm. As a consequence, this photonic crystal may be important for achieving materials with an incomplete band gap in the UV region.  相似文献   

8.
SiO2的赝晶化及AlN/SiO2纳米多层膜的超硬效应   总被引:1,自引:0,他引:1       下载免费PDF全文
赵文济  孔明  黄碧龙  李戈扬 《物理学报》2007,56(3):1574-1580
采用反应磁控溅射法制备了一系列不同SiO2层厚度的AlN/SiO2纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能,研究了SiO2层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响. 结果表明,由于受AlN六方晶体结构的模板作用,溅射条件下以非晶态存在的SiO2层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长. 由于不同模量的两调制层存在晶格错配度,多层膜中产生了拉、压交变的应力场,使得多层膜产生硬度升高的超硬效应. SiO2随层厚的进一步增加又转变为以非晶态生长,多层膜的外延生长结构受到破坏,其硬度也随之降低. 关键词: 2纳米多层膜')" href="#">AlN/SiO2纳米多层膜 赝晶化 应力场 超硬效应  相似文献   

9.
ZnO-Cu-ZnO multilayers were prepared by simultaneous RF magnetron sputtering of ZnO and DC magnetron sputtering of Cu. Cu films with different thickness were used as the intermediate metal layer. The optical and electrical properties of the multilayers studied by UV-vis spectrophotometer and four point probe method, respectively, shows that transmittance increases with decrease of copper thickness up to an optimum thickness of 5 nm and sheet resistance decreases with increase of thickness. Low resistivity and high transmission were obtained when the film structure has a thickness of ZnO/Cu/ZnO: 50/5/50 nm. The performance of the multilayers as transparent conducting material was better than the single layer ZnO of equal thickness.  相似文献   

10.
Improvement of mechanical and tribological properties on AISI D3 steel surfaces coated with [Ti-Al/Ti-Al-N]n multilayer systems deposited in various bilayer periods (Λ) via magnetron co-sputtering pulsed d.c. method, from a metallic binary target; has been studied in this work exhaustively. The multilayer coatings were characterized in terms of structural, chemical, morphological, mechanical and tribological properties by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy, nanoindentation, pin-on-disc and scratch tests, respectively. The failure mode mechanisms were studied by optical microscopy. Results from X-ray diffraction analysis revealed that the crystal structure of TiAl/TiAlN multilayer coatings has a tetragonal and FCC NaCl-type lattice structures for Ti-Al and Ti-Al-N, respectively, i.e., it was found to be non-isostructural multilayers. An enhancement of both hardness and elastic modulus up to 29 GPa and 260 GPa, respectively, was observed as the bilayer periods (Λ) in the coatings were decreased. The sample with a bilayer period (Λ) of 25 nm and bilayer number n = 100 showed the lowest friction coefficient (∼0.28) and the highest critical load (45 N), corresponding to 2.7 and 1.5 times better than those values for the coating deposited with n = 1, respectively. These results indicate an enhancement of mechanical, tribological and adhesion properties, comparing to the [Ti-Al/Ti-Al-N]n multilayer systems with 1 bilayer at 26%, 63% and 33%, respectively. This enhancement in hardness and toughness for multilayer coatings could be attributed to the different mechanisms for layer formation with nanometric thickness such as the novel Ti-Al/Ti-Al-N effect and the number of interfaces that act as obstacles for the crack deflection and dissipation of crack energy.  相似文献   

11.
采用射频磁控溅射方法制备单层AlN, Si3N4薄膜和不同调制周期的AlN/Si3N4纳米多层膜.采用X射线衍射仪、高分辨透射电子显微镜和纳米压痕仪对薄膜进行表征.结果发现,多层膜中Si3N4层的晶体结构和多层膜的硬度依赖于Si3N4层的厚度.当AlN层厚度为4.0nm、 Si3N4层厚度 关键词: 3N4纳米多层膜')" href="#">AlN/Si3N4纳米多层膜 外延生长 应力场 超硬效应  相似文献   

12.
Interactions induced in Al/Ti multilayers by implantation of Ar ions at room temperature were investgated. Initial structures consisted of (Al/Ti) × 5 multilayers deposited by d.c. ion sputtering on Si(1 0 0) wafers, to a total thickness of ∼250 nm. They were irradiated with 200 keV Ar+ ions, to the fluences from 5 × 1015 to 4 × 1016 ions/cm2. It was found that ion irradiation induced a progressed intermixing of the multilayer constituents and Al-Ti nanoalloying for the highest applied fluence. The resulting nanocrystalline structure had a graded composition with non-reacted or interdiffused Al and Ti, and γ-AlTi and AlTi3 intermetallic phases. Most intense reactivity was observed around mid depth of the multilayers, where most energy was deposited by the impact ions. It is presumed that Al-Ti chemical reaction is triggered by thermal spikes and further enhanced by chemical driving forces. The applied processing can be interesting for fabrication of tightly bond multilayered structures with gradual changes of their composition and properties.  相似文献   

13.
ITO/Ag/ITO multilayers have been prepared onto conventional soda lime glass substrates by sputtering at room temperature. The optical and electrical characteristics of single layer and multilayer structures have been investigated as a function of the Ag and ITO film thicknesses. Transmittance and sheet resistance values are found mainly dependent on the Ag film thickness; whereas the wavelength range at which the maximum transmittance is achieved can be changed by adjusting the ITO films thickness. ITO/Ag/ITO electrodes with sheet resistance below 6 Ω/sq have been obtained for Ag film thickness above 10 nm and ITO layers thickness in the 30-50 nm range. These multilayers also show high transmittance in the visible spectral region, above 90% by discounting the glass substrate, with a maximum that is located at higher wavelengths for thicker ITO.  相似文献   

14.
ZnS/Ag/ZnS (ZAZ) multilayer films were prepared on polyethene terephthalate (PET) by ion beam assisted deposition at room temperature. The structural, optical and electrical characteristics of ZAZ multilayers dependent on the thickness of silver layer were investigated. The ZAZ multilayers exhibit a low sheet resistance of about 10 Ω/sq., a high transmittance of 92.1%, and the improved resistance stabilities when subjected to bending. When the inserted Ag thickness is over 12 nm, the ZAZ multilayers show good resistance stabilities due to the existence of a ductile Ag metal layer. The results suggest that ZAZ film has better optoelectrical and anti-deflection characteristics than conventional indium tin oxide (ITO) single layer.  相似文献   

15.
Magnetic reversal mechanism of the Sub/AlN5 nm/[CoPt2 nm/AlN5 nm]5 nano multilayer film, which shows strong perpendicular magnetic anisotropy (Ku=6.7×106 erg/cm3), has been studied. The angle-dependent magnetic hysteresis loops of this highly perpendicular anisotropic CoPt/AlN multilayer film were measured in the present work, applying a magnetic field along different angles φ with respect to the film normal. It demonstrates that the magnetic reversal of the CoPt ultrathin layers in the CoPt/AlN multilayer film is occurred by the reversible magnetization rotation and the irreversible displacement of domain walls. The φ-dependent part of coercive field is resulted from the internal stress according to the Kondorsky and Kersten model. The φ-independent part of coercive field implies some random and isotropy pinning centers (e.g., vacancies, dislocations, grain boundaries) in the ultrathin CoPt layers. Our work is useful for coercivity control of metal/ceramics layered structures, in particular the perpendicular magnetic tunneling junctions.  相似文献   

16.
AlN is an interesting material with some excellent properties like high hardness (>11 GPa), high temperature stability (>2400 °C), good electrical resistivity (>1010 Ω cm), and good thermal conductivity (>100 W/m K). These properties make it useful in the field of photo voltaic systems. Cooling of solar cells in solar concentrator application is of major concern because high temperature reduces their efficiency. In the present work we deposited AlN coating, with and without an Al interlayer, on various substrates like Si, quartz, and copper using RF magnetron sputtering. Deposition conditions such as Al interlayer (deposition time = 5-20 min), Ar:N2 ratio (N2% = 0-75%) and substrate bias (0 and −50 V) were changed in order to study their effect on coating properties. Coating surface roughness increased from 0.05 to 0.15 μm with increase in Al interlayer thickness. The coating thickness decreased from 4.4 to 3.1 μm with increase in N2 gas % and films grew in (0 0 2) orientation. Films deposited on copper using Al interlayer showed good electrical resistance of ∼1013 Ω. Films deposited on copper without Al interlayer showed presence of voids or micro cracks and poor electrical properties. AlN films deposited at −50 V bias show cracking and delamination.  相似文献   

17.
Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 °C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (Eto) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.  相似文献   

18.
TiCN/TiNbCN multilayer coatings with enhanced mechanical properties   总被引:1,自引:0,他引:1  
Enhancement of mechanical properties by using a TiCN/TiNbCN multilayered system with different bilayer periods (Λ) and bilayer numbers (n) via magnetron sputtering technique was studied in this work. The coatings were characterized in terms of structural, chemical, morphological and mechanical properties by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and nanoindentation. Results of the X-ray analysis showed reflections associated to FCC (1 1 1) crystal structure for TiCN/TiNbCN films. AFM analysis revealed a reduction of grain size and roughness when the bilayer number is increased and the bilayer period is decreased. Finally, enhancement of mechanical properties was determined via nanoindentation measurements. The best behavior was obtained when the bilayer period (Λ) was 15 nm (n = 200), yielding the highest hardness (42 GPa) and elastic modulus (408 GPa). The values for the hardness and elastic modulus are 1.6 and 1.3 times greater than the coating with n = 1, respectively. The enhancement effects in multilayer coatings could be attributed to different mechanisms for layer formation with nanometric thickness due to the Hall-Petch effect; because this effect, originally used to explain the increase in hardness with decreasing grain size in bulk polycrystalline metals, has also been used to explain hardness enhancements in multilayers taking into account the thickness reduction at individual single layers that make the multilayered system. The Hall-Petch model based on dislocation motion within layers and across layer interfaces, has been successfully applied to multilayers to explain this hardness enhancement.  相似文献   

19.
HfC/Si3N4 nanomultilayers with various thicknesses of Si3N4 layer have been prepared by reactive magnetron sputtering. Microstructure and mechanical properties of the multilayers have been investigated. The results show that amorphous Si3N4 is forced to crystallize and grow coherently with HfC when the Si3N4 layer thickness is less than 0.95 nm, correspondingly the multilayers exhibit strong columnar structure and achieve a significantly enhanced hardness with the maximum of 38.2 GPa. Further increasing Si3N4 layer thickness leads to the formation of amorphous Si3N4, which blocks the coherent growth of multilayer, and thus the hardness of multilayer decreases quickly.  相似文献   

20.
Experiments are reported on sputter depth profiling of CrN/AlN multilayer abrasive coatings by secondary ion mass spectrometry (SIMS) coupled with sample current measurements (SCM). The coatings were deposited by a closed-field unbalanced magnetron sputtering. It is shown that after oxidation tests, performed in air at 900 °C for 2 h and at 1100 °C for 4 h, the layered structure begins to degrade but is not destroyed completely. Oxidation at 1100 °C for 20 h causes total destruction of the coatings that can be attributed to a fast diffusion of oxygen, nickel, manganese and other elements along defect paths (grain boundaries, dislocations, etc.) in the coating. There are practically no nitrides in the near-surface layer after such a treatment and all the metallic components are in the oxidized form as follows from the data obtained by X-ray photoelectron spectroscopy (XPS). According to XPS and mass-resolved ion scattering spectrometry (MARISS), the surface content of Al in the heat-treated coatings has decreased in comparison with the as-received sample and that of Cr increased. Both XPS and MARISS data exhibit real increase in superficial concentration of the substrate materials (Mn and Ni) that is controversial if using SIMS alone. SCM turned out to be an informative depth profiling method complementary to more expensive and complicated SIMS, being particularly useful for structures with different secondary electron emission properties of the layers. SCM with predetermined SIMS calibration allows a routine characterization of coatings and other multilayer structures, particularly, in situations where the expenses of analysis can be justified.  相似文献   

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