Magnetic and electrical properties of amorphous PdCoP alloys

Magnetic susceptibility and electrical resistivity measurements were performed (Pd_100?xCo_x)₈₀P₂₀ alloys where 15 < x < 50. The magnetic properties show that these alloys undergo a ferromagnetic transition between 272 and 399 K as the cobalt concentration increases from 15 to 50 atomic %. Below 20 atomic % Co the short-range exchange interactions which produce the ferromagnetism are unable to establish a long-range magnetic order and a peak in the magnetization shows up at the lowest temperature range under an applied field of 6.0 kOe. The electrical resistivity of these alloys has been measured from 4.2 K up to the vinicity of the melting point (900 K). The electrical resistivity data could be interpreted by the coexistence fo a Kondo-like minimum and ferromagnetism. The minimum becomes less important as the transition metal concentration increases. The coefficients of In T and T² become smaller and concentration dependent. The spin ordering in such alloys can be simulated as either the ordering due to an applied “external field” or as an increase in “internal fields”. These are due to an increase in transition metal concentration. The negative magnetoresistivity is a strong indication of the existence of localized moment.     

Magnetotransport properties of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> with different grain sizes

The magnetotransport and magnetoresistive (MR) properties of manganese-based La_0.67Ca_0.33MnO₃ perovskite with different grain sizes are reported. The electrical resistivity was measured as a function of temperature in magnetic fields of 0.5 and 1 T. The insulator–metal transition temperature, T _IM, shifted to a higher temperature with the application of the magnetic field. In zero field, T _IM is almost constant (∼271 K) for all samples except for the sample with the largest grain size, where T _IM=265 K. The temperature dependence of resistivity was fitted with several equations in the metallic (ferromagnetic) region and the insulating (paramagnetic) region. The density of states at the Fermi level, N(E _F), and the activation energy of electron hopping were estimated by fitting the resistivity versus temperature curves. The ρ–T ² curves are nearly linear in the metallic regime, but the ρ–T ^2.5 curves exhibit a deviation from linearity. The variable range hopping model and small polaron hopping model fit the data well in the high-temperature region, indicating the existence of the Jahn–Teller distortion that localizes the charge carriers. MR was found to increase with an increase in the magnetic field, an effect which is attributed to the intergrain spin tunneling effect.     

The attenuation of oscillatory thermocapillary convection in the oxide melt by a transverse magnetic field

The effect of a transverse magnetic field on the oscillatory thermocapillary convection in the NaBi(WO4)2 melt was studied by using the in-situ observation system. The oscillation was attenuated when the 60 mT magnetic field was applied, as shown by the decrease in the amplitude and the frequency. Furthermore, the oscillation under smaller temperature difference was stabilized after the magnetic field was applied. The magnetic effect could be due to the Lorentz force generated by the interaction between motional ions and the vertical magnetic field. The ionic conductivities were measured to demonstrate the effect of the magnetic field. The solid ionic electrical conductivity increases with the temperature rise, and the melt ionic electrical conductivity was measured to be about 2.0×10-4 Ω-1·cm-1. Experimental results manifest that the effect of the magnetic field on anions and cations in the melt makes the flow change to the direction normal to the applied field, so the flow is more orderly and the oscillation is suppressed.     

Influence of annealing atmosphere on the properties of La0.5Sr0.5MnO3

The structure, magnetic and electrical transport properties of La_0.5Sr_0.5MnO₃ annealed in different atmosphere have been investigated. No evident change of structural symmetry and the Curie temperature is observed for the samples. The resistivity at zero magnetic field of the samples annealed in air and nitrogen exhibits a metal–insulator transition, while no metal–insulator transition is observed for the sample annealed in oxygen, and for which the resistivity decreases monotonously with increasing temperature. Surprisingly, when an external magnetic field is applied, a metal–insulator transition appears for the sample annealed in oxygen. It is suggested that the annealing atmosphere affects the competition between FM and AFM phases due to the change of Mn⁴⁺/Mn³⁺ ratio and the oxygen/cation vacancies, and has a great influence on the electrical transport properties of La_0.5Sr_0.5MnO₃.     

Intrinsic inhomogeneities of low-doped lanthanum manganites in the paramagnetic temperature range

The nature of the electrical resistivity for low-doped lanthanum manganites is elucidated. The electrical resistivity is described by the Efros-Shklovskii law (lnρ √ (T ₀/T)^−1/2, where T ₀ √ 1/R _ls) in the temperature range from T* ≈ 300 K ≈ T _C (T _C is the Curie temperature for conducting manganites) to their T _C and is explained by the tunneling of carriers between localized states. The magnetoresistance is explained by a change in the size of localized states R _ls in a magnetic field. The patterns of change in R _ls with temperature and magnetic field strength determined from magnetotransport properties are satisfactorily described in the model of phase separation into small-radius metallic droplets in a paramagnetic matrix. The sizes R _ls and their temperature dependence have been estimated through magnetic measurements. The results confirm the existence of a Griffith phase. The intrinsic inhomogeneities produced by thermodynamic phase separation determine the electrical resistivity and magnetoresistance of lanthanum manganites.     

Role of surface phenomena in the magnetoresistivity of polycrystalline manganites La1−x CaxMnO3

The dc electrical resistivity and magnetoresistivity of polycrystalline manganites La_1−x Ca_xMnO₃ (x=0–0.3) are investigated as functions of the temperature, magnetic field and electric field, along with the microwave surface resistance. The investigations show that the dc electrical resistivity and magnetoresistivity are governed by the surface properties of the intergranular boundaries. The dc electrical resistivity is observed to decrease substantially (tenfold) for a comparatively small electric field (E⋟100 V/cm). Estimates are obtained for the internal electrical resistivity of the granules, the thickness of the contact layer (which depends on the temperature and the magnetic field), and the height of the potential barrier between the interfaces separating the surface layer and inner layer of a granule. Fiz. Tverd. Tela (St. Petersburg) 40, 1881–1884 (October 1998)     

Physical properties and anisotropies of the RNiGe3 series (R = Y, Ce-Nd, Sm, Gd-Lu)

We have studied RNiGe₃ (R=Y, Ce-Nd, Sm, Gd-Lu) single crystals by measuring crystal structure and stoichiometry, magnetic susceptibility, magnetization, electrical resistivity, magnetoresistance, and specific heat. Clear anisotropies as well as antiferromagnetic ordering in the RNiGe₃ series (R=Ce-Nd, Sm, Gd-Tm) have been observed above 1.8 K from the magnetic susceptibility. A metamagnetic transition in this family (except for R=Sm) was detected at 2 K for applied magnetic fields below 70 kOe. The electrical resistivity of this series follows metallic behavior in the high temperature region. Below the antiferromagnetic ordering temperature a significant anisotropy is exhibited in the resistivity and magnetoresistance for different current directions. The anisotropic magnetic, transport, and thermal properties of RNiGe₃ compounds are discussed in terms of Ni site occupancy as well as a combination of the effect of formation of a magnetic superzone gap and the crystalline electric field.     

Quantum oscillations of the resistivity and hall coefficient and the quantum limit in Bi<Subscript>0.93</Subscript>Sb<Subscript>0.07</Subscript> alloys in a magnetic field along the trigonal axis

The dependences of the electrical resistivity ρ and the Hall coefficient R on the magnetic field have been measured for single-crystal samples of the n-Bi_0.93Sb_0.07 semiconductor alloys with electron concentrations in the range 1 × 10¹⁶ cm⁻³ < n < 2 × 10¹⁸ cm⁻³. It has been found that the measured dependences exhibit Shubnikov-de Haas quantum oscillations. The magnetic fields corresponding to the maxima of the quantum oscillations of the electrical resistivity are in good agreement with the calculated values of the magnetic fields in which the Landau quantum level with the number N intersects the Fermi level. The quantum oscillations of the Hall coefficient with small numbers are characterized by a significant spin splitting. In a magnetic field directed along the trigonal axis, the quantum oscillations of the resistivity ρ and the Hall coefficient R are associated with electrons of the three-valley semiconductor and are in phase with the magnetic field. In the case of a magnetic field directed parallel to the binary axis, the quantum oscillations associated both with electrons of the secondary ellipsoids in weaker magnetic fields and with electrons of the main ellipsoid in strong magnetic fields (after the overflow of electrons from the secondary ellipsoids to the main ellipsoid) are also in phase. In magnetic fields of the quantum limit ħω _c /2 ≥ E _F, the electrical conductivity increases with an increase in the magnetic field: σ₂₂(H) ∼ H ^k . A theoretical evaluation of the exponent in this expression for a nonparabolic semiconductor leads to values of k close to the experimental values in the range 4 ≤ k ≤ 4.6, which were obtained for samples of the semiconductor alloys with different electron concentrations. A further increase in the magnetic field results in a decrease of the exponent k and in the transition to the inequality σ₂₂(H) ≤ σ₂₁(H).     

Structural,magnetic and electrical properties of Co1−xZnxFe2O4 synthesized by co-precipitation method

Nanoparticles of Co_1−xZn_xFe₂O₄ with stoichiometric proportion (x) varying from 0.0 to 0.6 were prepared by the chemical co-precipitation method. The samples were sintered at 600 °C for 2 h and were characterized by X-ray diffraction (XRD), low field AC magnetic susceptibility, DC electrical resistivity and dielectric constant measurements. From the analysis of XRD patterns, the nanocrystalline ferrite had been obtained at pH=12.5–13 and reaction time of 45 min. The particle size was calculated from the most intense peak (3 1 1) using the Scherrer formula. The size of precipitated particles lies within the range 12–16 nm, obtained at reaction temperature of 70 °C. The Curie temperature was obtained from AC magnetic susceptibility measurements in the range 77–850 K. It is observed that Curie temperature decreases with the increase of Zn concentration. DC electrical resistivity measurements were carried out by two-probe method from 370 to 580 K. Temperature-dependent DC electrical resistivity decreases with increase in temperature ensuring the semiconductor nature of the samples. DC electrical resistivity results are discussed in terms of polaron hopping model. Activation energy calculated from the DC electrical resistivity versus temperature for all the samples ranges from 0.658 to 0.849 eV. The drift mobility increases by increasing temperature due to decrease in DC electrical resisitivity. The dielectric constants are studied as a function of frequency in the range 100 Hz–1 MHz at room temperature. The dielectric constant decreases with increasing frequency for all the samples and follow the Maxwell–Wagner's interfacial polarization.     

Magnetoresistivity of the Kondo-system (La,Ce)B6

The electrical resistivity of the Kondo system (La, Ce)B₆ has been measured in longitudinal and transversal magnetic fields up to 6 Tesla in the temperature range 0.04–20K. Corresponding to the strong increase of the resistivity with decreasing temperature the alloys show a very large negative magnetoresistivity with a Kondo temperatureT _K =1.05K and a Kondo magnetic fieldB _K =1.1 Tesla. The observed anisotropy of the resistivity due to the magnetic field direction cannot be explained well by existing theories.     

Effect of the oxygen excess on the properties of weakly doped La<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ca<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>MnO<Subscript>3</Subscript> lanthanum manganites

The effect of an oxygen excess δ on the magnetic and electrical properties of La_1−x Ca _x MnO_3+δ (x=0.10–0.15) has been studied over wide ranges of temperatures and magnetic fields. As δ increases, the magnetic ordering temperature T_cdecreases by 70–90 K, the magnetoresistance increases (the electrical resistivity decreases by a factor of up to 10⁴ in a field of 9 T), and the effective moment μ_eff of the paramagnetic susceptibility substantially exceeds the theoretical value at temperatures two to four times higher than T _c and undergoes a jump, just as the activation energy of electrical resistivity, at T∼270 K. These results are attributed to the formation of cation vacancies, the localization of electrons in their vicinity with the subsequent formation of magnetic clusters, tunneling (or hopping) of carriers among them, changes in the sizes of clusters with variations in the temperature and magnetic field strength, the onset of frustrations initiated by the competition among different types of exchange interaction, and the dependence of the cluster parameters on the annealing conditions. Annealing of the oxygen-excess samples at high temperatures in vacuum (above 1100°C) restores the samples to a nearly initial state with the magnetic and magnetotransport properties characteristic of weakly doped manganites, as a result of the removal of cation vacancies.     

Low temperature resistivity minimum and its correlation with magnetoresistance in La0.67Ba0.33MnO3 nanomanganites

A systematic investigation of structural, magnetic and electrical properties of nanocrystalline La_0.67Ba_0.33MnO₃ materials, prepared by citrate gel method has been undertaken. The temperature-dependant low-temperature resistivity in ferromagnetic metallic (∼50 K) phase shows upturn behavior and is suppressed with applied magnetic field. The experimental data (<75 K) can be best fitted in the frame work of Kondo-like spin-dependant scattering, electron-electron and electron-phonon interactions. It has been found that upturn behavior may be attributed to weak spin disorder scattering including both spin polarization and grain boundary tunneling effects, which are the characteristic features of extrinsic magnetoresistance behavior, generally found in nanocrystalline manganites. The variation of electrical resistivity with temperature in the high temperature ferromagnetic metallic part of electrical resistivity (75K<T<T_P) has been fitted with grain/domain boundary, electron-electron and magnon scattering mechanisms, while the insulating region (T>T_P) of resistivity data has been explained based on adiabatic small polaron hopping mechanism.     

Anomalous electrical properties of linear chain mercury compounds

The electrical resistivity of Hg_2.86AsF₆ has been studied as a function of temperature. At room temperature, the resistivity along the chain direction is 10^?4 Ω-cm with an anisotropy of about 10². This incommensurate linear chain system remains metallic at low temperatures with resistance ratio ?_ab(300 K)/ ?_ab(1.4 K) ? 3000 and still increasing with no apparent sign of residual resistivity. A large anisotropic magnetic field dependence of the resistivity is observed below 30 K. Near 4 K, the c-axis resistance drops abruptly more than three orders of magnitude, apparently to zero, while ?_ab is continuous. The c-axis transition is suppressed in a small magnetic field.     

Electrical conduction and critical magnetic field for superconductivity of a Nb3Se4 single crystal

With respect to the quasi-one dimensionality of single crystals of Nb₃Se₄, the electrical resistivity from 1.3 to 320 K and the critical magnetic field for superconductivity are measured. The resistivity along the Nb-chain direction is represented as a sum of a temperature independent and an intrinsic temperature dependent term. The temperature dependence of the intrinsic resistivity subjects to T³ form between 10 and 80 K above which it tends to a T linear form. The critical magnetic field is proportional to the temperature difference from the transition temperature. Its dependence is well fitted by the elliptical fluxoid model of Ginzburg-Landau theory. The ratio of the parallel and the perpendicular to the c-axis is 5.7.     

Antiferromagnetic transition and electrical conductivity in α-Gd2S3

Magnetic susceptibility and electrical resistivity of α-Gd₂S₃ with an orthorhombic structure (space group: Pnma) have been measured for powder and single-crystal samples. While the magnetic susceptibility of powder sample exhibits a broad peak having a maximum at 4.2 K, the susceptibility for a single crystal with an applied magnetic field along the b-axis demonstrates a sharp drop below 10 K. Nevertheless, the susceptibility with the field perpendicular to the b-axis keeps increasing with decreasing temperature even below 10 K. The electrical resistivity ρ for the powder sample of 4.2×10³ Ω cm around room temperature increases with decreasing temperature and shows a slight discontinuity at about 65 K. In both regions above and below 65 K, is proportional to T^−1/4 with respective coefficients, which is associated with Mott variable-range hopping conductivity. The resistivity of a single crystal along the b-axis is considerably smaller than the value for the powder sample as 0.35 Ω cm at room temperature, and its temperature dependence is fairly weak. While cooling, the resistivity first decreases down to 240 K and then keeps the value independent of the temperature down to 140 K, and subsequently rises gently below 140 K.     

Magnetic and transport properties of Pr2Pd3Si5

We have investigated the magnetic and transport properties of a new ternary intermetallic compound Pr₂Pd₃Si₅ which forms in U₂Co₃Si₅-type orthorhombic structure (space group Ibam). At low field (0.01 T) magnetic susceptibility exhibits an abrupt increase below 7 K and peaks at 5 K, revealing a magnetic phase transition. The onset of magnetic order is also confirmed by well defined anomalies in the specific heat and electrical resistivity data. Apart from the sharp λ-type anomaly, magnetic part of specific heat also shows a broad Schottky-type hump due to crystal field effect. Magnetoresistance data as a function of temperature exhibits a pronounced peak in paramagnetic state which could be interpreted in terms of crystal field effect and short-range ferromagnetic correlations.     

Magnetic and transport properties of Pr2Pt3Si5

We have investigated the magnetic and transport properties of a polycrystalline Pr₂Pt₃Si₅ sample through the dc and ac magnetic susceptibilities, electrical resistivity, and specific heat measurements. The Rietveld refinement of the powder X-ray diffraction data reveals that Pr₂Pt₃Si₅ crystallizes in the U₂Co₃Si₅-type orthorhombic structure (space group Ibam). Both the dc and ac magnetic susceptibility data measured at low fields exhibit sharp anomaly near 15 K. In contrast, the specific heat data exhibit only a broad anomaly implying no long range magnetic order down to 2 K. The broad Schottky-type anomaly in low temperature specific heat data is interpreted in terms of crystal electric field (CEF) effect, and a CEF-split singlet ground state is inferred. The absence of the long range order is attributed to the presence of nonmagnetic singlet ground state of the Pr³⁺ ion. The electrical resistivity data exhibit metallic behavior and are well described by the Bloch–Grüniesen–Mott relation.     

Magnetic and electrical transport properties in the self-doped manganite La0.9Mn0.9M0.1O3 (M=Mn,Zn and Ti)

The magnetic and electrical transport properties of La_0.9Mn_0.9M_0.1O₃ (M=Mn, Zn and Ti) were investigated. The temperature and magnetic field dependence of electrical resistivity (ρ) and dc magnetization were studied. All the compounds are found in rhombohedral structure. The excess oxygen in all three compounds was detected through iodometric titration. A modification in resistivity is observed when M=Mn is replaced by M=Zn and Ti. The high temperature resistivity above T_C follow variable range hopping model for both Zn and Ti compounds. For Zn doping, the observation of large field-cool effect and decrease in resistivity at room temperature and is assumed to be due to the implant of Mn⁴⁺ in Mn³⁺ matrix, which favor Mn³⁺/Mn⁴⁺ double exchange. The ferromagnetic behavior below T_C for the compound with M=Ti is correlated to the excess oxygen in it, which implants Mn⁴⁺ and thus incorporates ferromagnetic interactions. The substitutions lead to a reduction of T_c and magnetization.     

Large negative magnetoresistance in thiospinel CuCrZrS4

We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS₄. The electrical resistivity increased with decreasing temperature according to the exp(T₀/T)^1/2, an expression derived from variable range hopping with strong electron-electron interaction. The resistivity under a magnetic field was expressed by the same form with the characteristic temperature T₀ decreasing with increasing magnetic field. Magnetoresistance ratio ρ(T,0)/ρ(T,H) is 1.5 for H=90 kOe at 100 K and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. A possible mechanism of the large magnetoresistance is discussed.