用线性丸盒轨道原子球近似超元胞法计算(Ba_(1-x)K_x)BiO_3立方超导相(x=0.25,0.5,0.75)的电子结构

用线性丸盒轨道原子球近似(LMTO-ASA)超元胞法计算(Ba_(1-x)Kx)BiO_3立方超导相x=0.25与x=0.5的电子结构,作为对照同时计算立方结构x=0.75的电子结构。计算结果表明,用超元胞法可以得到比“刚带近似”较精确的电子结构参数。给出Fermi面上的能带参数随组分的变化趋势。讨论了不等价的氧原子与周围金属原子价轨道的杂化特征。     

用局域密度泛函线性丸盒轨道原子球近似超元胞法计算(Ba1-xKx)BiO3的Hopfield常数与Tc随组分x的变化

用局域密度泛函线性丸盒轨道原子球近似(LDF-LMTO-ASA)超元胞法计算(Ba_1-xK_x)BiO₃特定组分x的电子结构,其中x=0.0,0.5,1.0三种组分由扩大1倍的元胞计算;x=0.25和0.75两种组分由扩大4倍的元胞计算,所得能带参数总态密度TDOS(E_F)、分波态密度PDOS(E_F)以及自洽晶体势V^t(r),结合由实验测定的Θ_D≈210K,按McMillan强耦合公式以及Gaspari-Gyorffy近似,分别计算各原子的Hopfield常数η_t,电声子耦合常数λ以及超导转变温度T_c随组分x的变化。计算结果λ≈1而T_c最大约10K,且随x变化缓慢。与实验结果对比似乎暗示,在(Ba_1-xK_x)BiO₃中除电声子机制外,随组分变化的复杂结构相变亦将起重要的作用。 关键词：     

用局域密度泛函线性丸盒轨道原子球近似超元胞法计算(Ba_(1-x)K_x)BiO_3的Hopfield常数与T_c随组分x的变化

用局域密度泛函线性丸盒轨道原子球近似(LDF-LMTO-ASA)超元胞法计算(Ba_(1-x)Kx)BiO_3特定组分x的电子结构,其中x=0.0,0.5,1.0三种组分由扩大1倍的元胞计算;x=0.25和0.75两种组分由扩大4倍的元胞计算,所得能带参数总态密度TDOS(E_F)、分波态密度PDOS(E_F)以及自洽晶体势V~ι(r),结合由实验测定的≈210K,按McMillan强耦合公式以及Gaspari-Gyorffy近似,分别计算各原子的Hopfield常数η_t,电声子耦合常数λ以及超导转变温度Tc随组分x的变化。计算结果λ≈1而Tc最大约10K,且随x变化缓慢。与实验结果对比似乎暗示,在(Ba_(1-x)K_x)BiO_3中除电声子机制外,随组分变化的复杂结构相变亦将起重要的作用。     

Nb(C1-x□x)基态性质的LMTO-ASA超元胞计算

用LDF-LMTO-ASA超元胞法,以四倍于元胞的超元胞,以Nb₄C₄□₀,Nb₄C₃□₁,Nb₄C₂□₂Nb₄C₁□₃Nb₄C₀□₄为五种“样本”,结合任意组分x的伯努利分布,计 关键词：     

SrRuO3的电子结构与磁性研究

用自洽的全势能线性丸盒轨道能带方法计算了氧化物体系SrRuO₃(SRO)的电子结构和磁性.对于理想的立方钙钛矿结构的计算得出的电子结构明显改善了已有的计算结果:每个元胞的磁矩为129μ_B,按原子球划分为084μ_B/Ru原子和011μ_B/O原子;Sr原子上的自旋磁矩几乎为零;费米能级处的态密度N(E_F)为435(states/Ryd/f.u.).关于实际的正交结构SRO,计算得出磁矩为108μ关键词： 过渡金属氧化物 电子结构 磁性     

应变层超晶格(InAs)n(InP)n(001)电子结构的LMTO计算

基于Linearized-Muffin-Tin Orbitals(LMTO)能带方法,采用内部求和计入空d轨道的处理,对(InAs)_n(InP)_n(001),(n=1,2,3)应变层超晶格的电子结构进行了第一性原理计算。得出了其能带结构,态密度分布(对n=1)。考察了In4d轨道对能带计算的影响,并采用冻结势方法求出了(InAs)_n(InP)_n(001),(n=1,2,3)的价带边不连续值△E_v。 关键词：     

非晶态(Fe1-xVx)84B16合金的磁性和电性

用单辊急冷法制备了非晶态(Fe_1-xV_x)₈₄B₁₆(x=0,0.02,0.04,0.06,0.10)合金的薄带,分别用磁天平和四端引线法测量了饱和磁化强度和高温电阻率的温度关系。得到平均每个磁性原子的磁矩随V含量的增加近似线性下降,计算出每个Fe原子和每个V原子的平均磁矩分别为2.08μ_B和-5.08μ_B。居里温度T_c从x=0时的622K下降到x=0.10时的478K。利用自旋波激发公式:σ(T)=σ(0)(1-BT^* 关键词：     

第一原理计算稀磁半导体(In1-xMnx)As的晶格常数,磁性和电子结构

用紧束缚近似线性Muffin-tin轨道的方法计算了稀磁半导体(In1-xMnx)As(x=1/2,1/4和1/8)的晶格常数,磁性和电子结构.给出了Mn掺杂浓度的变化对(In1-xMnx)As的晶格常数,磁性和电子结构的影响.     

Y(Mn1-xCox)12磁结构的中子衍射分析

在研究Y(Mn_1-xCo_x)₁₂晶体结构的基础上,为了分析这种化合物的磁结构,我们挑选了不同成分的试样,在液氮温度下作了中子衍射测量。实验上测到的磁有序超结构峰可以用YMn₁₂单胞指标化为h十k+l=2n+1。使用各种可能的磁结构模型对数据进行了分析,根据计算强度与观测强度的最佳拟合,得出了Y(Mn_1-xCo_x)₁₂的磁结构随x变化的某些结论。 关键词：     

含铀化合物UAl3和USn3电子结构的密度泛函研究

用第一性原理的全势能LMTO密度泛函能带计算方法研究了具有简单立方Cu₃Au 结构的含U化 合物UX₃(X=Al, Sn)的电子结构.对于重原子U的相对论效应，除了用标量相对论 加以修正 外，还加入了自旋-轨道耦合的修正.研究结果定性地说明了由于不同的交换关联电子势场的 作用，在这两种结构相同的含U合金中，U的5f电子态具有完全不同的性质，即在UAl_{3< /sub>和US n3中U的5f态分别表现为巡游扩展态和局域态行为，通过St 关键词： 铀化合物 电子态 密度泛函理论 自旋-轨道耦合}     

Band structure for some Nb3X compounds

The tight binding method is used to calculate band structure for a number of Nb₃X compounds. The 4d band of the niobium, as well as the s-p bands of the X-atoms, are considered. The transfer and overlap integrals are calculated using tabulated atomic orbitals. The crystal field parameters (CFP) are estimated more carefully, taking into account deviations from a muffin-tin potential. We employ here the independent band approximation in which no interband interaction is considered. This approximation has been proved successful for the V₃Ga case, and it is estimated here that interband interaction may shift some levels up or down by 50 mRy or so, but the overall band-structure does not change. The Fermi level is found to lie in the neighbourhood of three peaks; one belongs to the δ₂(d_xy) band and the two others belong to the π(d_xz, d_yz) band.     

Narrow band model parameters for the CO2 4·3 μm band

The narrow band model parameters of the carbon dioxide 4·3 μm band have been obtained from absorption experiments with four broadening gases, namely CO, N₂, O₂, and Ar. The temperature and wave number dependence of the parameters are discussed. The experiments were performed at temperatures of about 303, 598 and 1185°K, with CO₂ partial pressures between 0·01 and 1·0 atm, at a total pressure of 1·0 atm. The Elsasser and the statistical models were applied to thebands in order to obtain applicable parameters and to determine a suitable model for the band at each temperature. It has been found that the Elsasser model is an adequate representation of the band at low temperatures whereas the statistical model is preferred at elevated temperatures. The effect on the line half-widths of the broadening gases is discussed. Good agreement is obtained between absorptance calculated with the present parameters and experimental results obtained by other authors.     

Neutron scattering from intinerant ferromagnets just above Tc

Neutron scattering from itinerant ferromagnets at and just above T_c is studied on the basis of a simple band model with no short range order. Results are found for scattering line widths for small momentum and energy transfers which are substantially independent of band parameters. Some comparison with experiment is attempted.     

Optical and structural studies on Ba(Mg1/3Ta2/3)O3 thin films obtained by radiofrequency assisted pulsed plasma deposition

Single-phase Ba(Mg_1/3Ta_2/3)O₃ thin films were prepared by radiofrequency plasma beam assisted pulsed laser deposition (RF-PLD) starting from a bulk ceramic target synthesized by solid state reaction. Atomic force microscopy, X-ray diffraction and spectroscopic ellipsometry were used for morphological, structural and optical characterization of the BMT thin films. The X-ray diffraction spectra show that the films exhibit a polycrystalline cubic structure. From spectroscopic ellipsometry analysis, the refractive index varies with the thin films deposition parameters. By using the transmission spectra and assuming a direct band to band transition a band gap value of ≈4.72 eV has been obtained.     

Shifting and line mixing parameters in the ν4 band of NH3 perturbed by CO2 and He: Experimental results and theoretical calculations

The pressure-induced shifting coefficients and line mixing parameters have been studied in the ν₄ band of NH₃ perturbed by CO₂ and He at room temperature. Measurements have been made using a high-resolution Fourier transform spectrometer. The measurements cover the ^PP and ^RP branches of the ν₄ band and are located in the spectral range 1470-1600 cm⁻¹. The line shift and line mixing parameters have been derived from a non-linear least-squares multi-pressure fitting technique. The shift coefficients are compared to a semiclassical calculation based on the Robert-Bonamy formalism employing two types of intermolecular interactions. It is shown that the line shifts mainly originate from the vibrational dephasing effects. The observed interference parameters are compared with calculations based on state-to-state collisional cross sections calculated from the intermolecular potential with a semiclassical approach. The results of computation are in reasonable agreement with the experimental data. It is demonstrated also that the line mixing process mainly originates from the energy transfer between symmetric and antisymmetric components of the inversion doublets.     

Measured and predicted band model parameters of BF3(v3) at high temperatures

Two experimental techniques were used to determine the high temperature infrared absorption coefficients of the v₃ band of BF₃. A high temperature flow tube fitted with a multipass infrared absorption cell was used to determine the BF₃ absorption coefficients at 295, 585, 870, 1150, and 1440K. BF₃ was also used in a flame emission-absorption apparatus to determine the BF₃ absorption coefficients at 2400 K.A generalized formulation for predicting the S/d and 1/d band model parameters of symmetric top perpendicular bands of MX₃ molecules is presented. The effect of including nuclear spin statistics in computing the S/d and 1/d band model parameters is considered. It is shown that nuclear spin statistic?s effect only the 1/d parameter and are significant only for the case of zero nuclear spin. A number of practical considerations, which arise in designing a computer algorithm to calculate the S/d and 1/d parameters, are discussed.Comparisons of the theoretical and experimental BF₃ absorption coefficients are made. Good agreement between theory and experiment at all temperatures was obtained by adjusting only two vibrational energy coupling constants, _χ23 and _χ34. Predicted S/d and 1/d band model parameters at 300, 600, 900, 1200, 1500, 2000, 2500, and 3000 K are presented.     

Exciton spectra, valence band splitting, and energy band structure of CuGaXIn1−XS2 and CuGaXIn1−XSe2 crystals

Exciton spectra are studied in CuGa_XIn_1−XS₂ solid solutions by means of photoreflectivity and wavelength modulation spectroscopy at liquid nitrogen temperature. The exciton parameters, dielectric constants, and free carrier effective masses are deduced from experimental spectra by calculations in the framework of a model taking into account the spatial dispersion and the presence of a dead-layer. The crystal field and spin orbit valence band splitting is calculated as a function of X taking into account the energy position of excitonic lines. The energy band structure of CuGa_XIn_1−XS₂ and CuGa_XIn_1−XSe₂ compounds is derived from optical spectra at photon energies higher than the fundamental band gap. The energies of optical transitions are tabulated for X values from 0 to 1.     

Transport properties of CdIn2S4 single crystals

Several transport properties have been studied on CdIn₂S₄ singlê crystals with different degrees of deviation from stoichiometry. The energy gap at 0 K was determined from the electrical measurements to be 2.2 eV. The anisotropy of the magnetoresistance effect was found and it was suggested that the minima of the conduction band were located at points along the [100] directions in k space. From an analysis of the mobility data it was found that the high resistivity of the samples is due to compensation of donors by acceptors introduced by excess sulphur. Several band parameters, the carrier scattering mechanisms and the impurity levels were determined. The thermal conductivity was measured from 4 K to 300 K and analysed by Callaway's formalism.     

Optical absorption due to transitions between bands and local levels in CdCr2Se4

The theory of optical absorption due to transitions between a valence band and a hydrogen-like local level associated with a conduction band is modified to permit an arbitrary power-law dependence of energy on the magnitude of the wave-vector of carriers in the valence band. The observed absorption for photon energies below 1.6 eV in the ferromagnetic semiconductor CdCr₂Se₄ is discussed in terms of a combination of two types of terms. The first type of absorption is due to transitions to a local level from a band with two branches, in each of which there is an energy region with a width of 0.28 eV or more beginning 0.10–0.16 eV from the band edge, in which the energy measured from some origin near but not necessarily equal to the band-edge is approximately proportional to (wave-vector)^{($\text{1}\text{3}$)}. The second type of absorption has a dependence on photon energy ?ω of the form (?ω ? E₃)², where E₃ is a threshold energy probably connected with indirect transitions between bands as suggested by Sakai, Sugano and Okabe. After constraints on parameters appearing in the theory are imposed by use of results of these authors and of Shepherd, it is found that curves of Harbeke and Lehmann on optical absorption in CdCr₂Se₄ at 4.2, 78, 130 and 298 K in the photon-energy range 1.14–1.42 eV can be fitted to a mean accuracy of 3%, using an average of 3.75 adjustable parameters for each curve. The strength of the indirect band-to-band absorption does not have the temperature dependence expected for phonon-assisted indirect band-to-band transitions, but can be described by a term independent of temperature plus another term proportional to the square of the deviation of the magnetization from saturation. The fitting of the absorption curves requires that the ratio of the widths of the two branches of the bands varies from about 1.6 at low temperatures to 1.35 at 298 K and that the total width of the bands involved is less than 1 eV.     

Cocktail effect of Fe2O3 and TiO2 semiconductors for a high performance dye-sensitized solar cell

The bi-semiconductors of TiO₂ and Fe₂O₃ were used as a photoelectrode material in a high performance dye-sensitized solar cell due to cocktail effects from the two conduction bands. The size of the semiconductors was reduced by using a paint shaker to enlarge the contact area of the semiconductor with the dye or electrolyte. The fill factor and the efficiency of the prepared dye-sensitized solar cell were improved by over 16% and 300%, respectively; these parameters were measured from a current-voltage curve that was based on the effects of the Fe₂O₃ co-semiconductor and the size reduction. A mechanism is suggested wherein the conduction band of Fe₂O₃ works to prohibit the trapping effects of electrons in the conduction band of TiO₂. This result is attributed to the prevention of electron recombination between electrons in the TiO₂ conduction band with dye or electrolytes. The mechanism is suggested based on impedance results, which indicate improved electron transport at the interface of the TiO₂/dye/electrolyte.