Use of smoke samples in diamond-anvil cells to measure pressure dependence of optical spectra: Application to the ZnO exciton

We present measurements of ZnO exciton peak energies, E₀, at pressures up to 107.3 kbar. Smoke samples consisting of randomly oriented single crystal particles were prepared by oxidizing metallic zinc in air and were collected on one diamond face of a Merrill-Bassett pressure cell. Pressures were measured by the ruby fluorescence technique. In the pressure range between 5 and 90 kbar, our results indicate a consistent linear dependence with dE₀/dP = 2.33 × 10^?3 eV kbar^?1 for both increasing and decreasing pressures. A mixed phase structure is suggested by the observed irregular peak shapes and measured pressure dependence for the sample that had been taken beyond ? 90 kbar where the transformation to the NaCl structure has been reported.     

Hydrostatic pressure effect on Tc of Ba0.9K0.1Pb0.75Bi0.25O3

The superconducting transition temperature of Ba_0.9K_0.1Pb_0.75Bi_0.25O₃ has been found to be suppressed smoothly by the application of hydrostatic pressure at a rate of —(2.9 ± 0.2) × 10^?5 kbar^?1 up to 15 kbar. The implications of these results are discussed.     

半磁半导体Cd1-xMnxTe光吸收边的压力效应

本文研究了室温下1—40kbar流体静压力范围内三元化合物半磁半导体Cd_1-xMn_xTe光吸收边的压力效应。实验结果给出:x<0.5的样品,吸收边随压力增加向高能方向以α=6—8×10^-3eV/kbar的速率漂移,并具有10^-5/kbar²量级的二级非线性系数;x≥0.5的样品,表观吸收边随压力增加向低能方向漂移,压力系数为α-5×10^-3eV/kbar。高压下所研究的样品均有一从闪锌矿结构到NaCl结构的相变发生。这一相变可以是不可逆的,相变压力与样品组分有关,大致在25—40kbar范围内。根据半导体能带畸变势效应和晶体场理论模型估计了压力系数的理论值,讨论了不同压力系数的物理原因。 关键词：     

Pressure dependence of the absorption edge for Cd1-xMnxTe

The effect of pressure on the optical absorption edge of mixed crystals Cd_1-xMn_xTe with different manganese concentrations is reported. The observed absorption edge shifts to higher energy with increasing pressure at a rate of α=7?8×10^?3 eV/kbar and a second order coefficient of β=-4×10^?5 eV/kbar² for x<0.5, to lower energy with increasing pressure at a rate of α=-5.0 ×10^?3 eV/kbar for x?0.5. A phase transition occurs for all the samples studied. The absorption edge of the new phase is outside the wavenumber range of the instrument. The physical origins of different pressure coefficients are discussed in the light of the deformation potentials of energy band states and the hybridization of the Mn²⁺ 3d levels with the p-like states in the valence band.     

Hydrostatic pressure effects on the superconducting properties of Ag1−xSn1+xSe2

The superconducting transition temperature, T_c, of NaCl structure compounds in the series Ag_1?xSn_1+xSe₂ is found to be exceptionally sensitive to hydrostatic pressures up to 21 kbar. For five samples of varying composition, T_c is suppressed smoothly at a rate of ?(6?8)×10^?5K·bar^?1. These results are discussed with respect to the volume sensitivity of the electron-phonon interaction responsible for superconductivity.     

Effect of pressure on the distribution of hyperfine field about A Sn impurity in iron

The distribution of hyperfine field at the iron atoms in an FeSn alloy has been measured as a function of pressure to 15 kbar. The frequency of the main NMR line was found to change such that (? ln H_m/?P)_T = ? 1.7 × 10^?4 kbar^?1, which is close to the value in pure iron. The value for the satellite line, due to iron atoms which are third nearest neighbours of the impurity, was (? ln H₃/?P)_T = ? 2.4 × 10^?4 kbar^?1. The magnitude of the difference of the pressure derivatives of H_m and H₃ is not consistent with models in which the Sn atom is screened by conduction electrons but may be understood in terms of a perturbation of the 3d band of iron. The discrepancy between spin wave theory and the measured temperature dependence of the hyperfine fields at constant pressure is not removed by correction to constant volume.     

X-ray compressibility measurements of the graphite intercalates KC8 and KC24

The isothermal compressibilities of pristine graphite and stages 1 and 2 potassium-graphite have been measured at room temperature. Diamond anvil X-ray diffraction techniques were employed to determine the c-axis lattice constant as a function of hydrostatic pressure up to 12 kbar. The compressibilities $\text{k}{}_{\mathrm{c}}\text{?}\text{1}\text{C}{}_{33}$ were found to be (2.73±0.09)×10^-12, (2.13±0.09)×10^-12, (5.3±0.8)×10^-12 and $\text{(1.6±0.2)×10}{}^{-12}\text{cm}{}^2\text{dyn}$ for graphite, KC₈, stage 2 KC₂₄ and stage 3 KC₂₄, respectively. The compressibility of KC₈ was comparable to that of RbC₈ deduced from neutron scattering experiments.     

Pressure dependence of phase transitions in K2SnCl6 from NQR frequency measurements

The influence of hydrostatic pressure 0 ? p ? 4 kbar on the ³⁵Cl NQR in K₂SnCl₆ was studied in the temperature range 238 K ? T ? 300 K. The phase transition temperatures T_C1 and T_C2 were determined from changes in the NQR line pattern.The phase boundaries in the p-T diagram are straight lines in the region studied. The pressure coefficients are given by dT_C1/dP = 1.35 (10) K kbar^?1 and dT_C2/dP=?1.25 (20) K kbar^?1.     

High pressure and emission spectra of Eu3+ in L-EuBO3

Effects of the high pressure on the emission spectra of Eu³⁺-activated L-EuBO₃ were considered at room temperature up to 100 kbar. The position of five 0–2 lines in the ⁵D₀→⁷F₂ transition region was determined. The pressure does not have the same effect on all these lines. In four of them, high pressure induced a red shift with different shift rates:+0.0022,+0.0035,+0.0034 and+0.0027 nm kbar^?1, respectively, whereas in the last one, high pressure induced a blue shift with shift rate?0.0034 nm kbar^?1. Possible reasons for the mentioned pressure effects on the line positions were considered.     

Studies of the local compressibility of Cr 3+-centered octahedron in LiSc (WO 4)2 crystal from the pressure dependence of the optical spectra

The pressure-induced shifts of optical spectral bands ⁴T₂ and ²E for the preferential Cr³⁺-centered octahedron for Cr³⁺ at the Sc³⁺ site of the LiSc (WO ₄)₂ crystal have been calculated from crystal-field theory. From the calculation, the local linear compressibility d ln R/d p≈?3.3×10^?4 kbar^?1 for the Cr³⁺ center in a LiSc (WO ₄)₂ crystal is obtained. The result is discussed.     

On the behaviour of TSeF-TCNQ under pressure

We report b-axis electrical conductivity data for TSeF-TCNQ single crystals from 12 to 300 K under hydrostatic pressures up to 9 kbar. The single anomaly visible in the conductivity at 29 K and the low temperature conductivity gap rise under pressure at the same rate of ～ 6% kbar^-1. It has been found that the pressure dependence of the metal-insulator phase transition is qualitatively consistent with a mean field formulation of the Peierls transition. A Gruneisen constant of 0.64 for TSeF-TCNQ has been derived from this pressure study together with recent optical and compressibility investigations. The pressure dependence of the conductivity anisotropies at room temperature in TSeF-TCNQ and TTF-TCNQ are reported. The magnitude of the anisotropies in the two compounds are found to be essentially the same. The striking result, however, is that the anisotropies in both compounds are found to be independent of pressure up to 9 kbar.     

Temperature and pressure dependence of the elastic property of GeS2 glass

The sound velocities in GeS₂ glass have been measured by means of ultrasonic interferometry as a function of temperature or pressure up to 1.8 kbar. The bulk modulus K_s = 117.6 kbar and shear modulus G = 60.60 kbar were obtained for GeS₂ glass at 15°C and 1 atm. The temperature derivatives of both sound velocities and elastic moduli are negative :

$\text{(}\text{?ν}{}_1\text{?T}\text{)}$

_p =

$\text{?1.54 × 10}{}^{\mathrm{?4}}\text{km}\text{sec}$

°C,

$\text{(}\text{?ν}{}_1\text{?T}\text{)}$

_p =

$\text{?1.27× 10}{}^{\mathrm{?4}}\text{km}\text{sec}$

°C and

$\text{(}\text{?K}{}_{\mathrm{s}}\text{?T}\text{)}$

_p =

$\text{?1.27 × 10}{}^{\mathrm{?2}}\text{kbar}\text{°C}$

,

$\text{(}\text{?G}\text{?T}\text{)}$

_p = ?1.23 × 10^?2 kbar/°C,

$\text{(}\text{?Y}\text{?T}\text{)}$

_p = ?2.93 × 10^?2 their pressure derivatives are positive:

$\text{(}\text{?ν}{}_1\text{?P}\text{)}$

_T = 4.43× 10^?2km/kbar,

$\text{(}\text{?ν}{}_1\text{?P}\text{)}$

_T =

$\text{0.633 × 10}{}^{\mathrm{?2}}\text{km}\text{kbar}$

and (?K_s?P0)_T=6.81,

$\text{(}\text{?G}\text{?P)}{}_{\mathrm{T}}$

= 1.03, (?Y?T_T= 3.57. The Grüneisen parameter, γ_th= 0.298, and the second Grüneisen parameter, δ_s = 3.27, have also been calculated from these data. The elastic behavior of GeS₂ glass has proved to be normal despite the structural similarity among the tetrahedrally coordinated SiO₂, GeO₂ and GeS₂ glasses.     

Pressure dependence of the Néel temperature in CeMg and CeZn

Magnetization measurements have been carried out under hydrostatic pressures up to 6 kbar and constant magnetic fields (10 kOe) in CsCl-type compounds: CeMg and CeZn. a decrease in the Néel temperature, T_N, with increasing pressure is observed in both compounds (dT_N/dp=- 0.2 and -0.17 K kbar^-1 respectively in CeMg and CeZn). The relative decrease of T_N has a similar order of magnitude to that found in other cerium compounds with Kondo-type properties.     

The electrical properties of HgTe and HgSe under very high pressure

The electrical properties of HgTe and HgSe have been investigated at pressures up to 200 kbar in an octahedral apparatus. Measurements of the electrical resistivity at room temperature showed that, beyond the well-known transition from the semimetallic to semiconductive state, both become metallic, at 84 kbar and 155 kbar, respectively. The energy gap at various fixed pressures was obtained from the resistance-temperature relationships. The energy gap of semiconducting HgTe decreases monotonically with pressure, the coefficient being ?l.53 × 10^?5$\text{eV}\text{bar}$. The energy gap of HgSe is rather insensitive to pressures up to 75 kbar, above which it decreases continuously ($\text{dE}\text{dP}$ = ?1.59 × 10^?5$\text{eV}\text{bar}$) before vanishing around 150 kbar. At high pressures the temperature coefficient of the resistance in the metallic state is 3.25 ~ 4.70 × $\text{10}{}^{\mathrm{?3}}\text{deg}$ for HgTe, and 5.7 ~ 5.9 × $\text{10}{}^{\mathrm{?3}}\text{deg}$ for HgSe.     

Pressure effect on magnetic properties of RCo12B6 (R=Y,Ce) compounds

The effect of pressure on magnetic properties of YCo₁₂B₆ and CeCo₁₂B₆ was studied in temperature range 5–300 K at pressures up to 9 kbar. The Curie temperature T_C and spontaneous magnetization M_S decrease with pressure for both compounds. The decrease can be attributed mostly to the volume dependence of both, the Co magnetic moment and the exchange interactions. The hybridization of the p–d states as a consequence of small distances between the Co and B atoms can be one reason of the relatively low pressure effects (ΔT_C/Δp=?0.39±0.02 K/kbar, d ln M_S/dp=?0.0013±0.0002 kbar^?1) in YCo₁₂B₆. Higher volume sensitivity of magnetic properties of CeCo₁₂B₆ in comparison with YCo₁₂B₆ can be attributed to the pressure induced changes of the Ce f- and Co d-states.     

Thermodynamic properties of the CeSn3 mixed valence compound

We have measured on the CeSn₃ compound, the expansion coefficient between 80 and 800 K at normal pressure, the isothermal compressibility in the 0–8 GPa pressure range at room temperature and the heat capacity at constant pressure in the 60–300 K temperature range. The experimental data were compared with those previously found for the isomorphous LaSn₃ phase, assumed as a proper reference material for the study of the intermediate valency states in CeSn₃. Both the thermal expansion (3α) and the isothermal compressibility (k) of CeSn₃ show behaviours quite different from those of LaSn₃: for instance, in the standard conditions, 3α is 55 × 10^?6K^?1for CeSn₃ and 38 × 10^?6K^?1for LaSn₃; k is 15 × 10^?12 Pa^?1 and 12 × 10^?12 Pa^?1 respectively for CeSn₃ and LaSn₃. The thermal behaviour of the molar specific heat at constant pressure of CeSn₃ is similar to that of LaSn₃ for temperatures lower than 50 K. In the 70–300 K temperature range, the heat capacity of CeSn₃ is clearly higher than that of LaSn₃, ΔC_p being maximum near 150 K. The analysis of the calorimetric data show that the electronic coefficient γ of CeSn₃ is temperature dependent: its value varies from 53 mJ K^?2 mole^?1 at low temperature 24 mJ K^?2 mole^?1 at 300 K.     

DX-Like behavior of Se-impurity centers in gasb under hydrostatic pressure

Abstract

Hall coefficient (R_H) and electrical resistivity measurements have been performed as a function of temperature (between 77 K and 300 K) and under hydrostatic pressures (up to 15 kbar) on a set of Se-doped GaSb samples with impurity concentrations in the range 8×10¹⁷ cm^?3 - 1×10¹⁸ cm^?3. With increasing pressure at 300 K, the electrons are strongly trapped into a resonant impurity level. The pressure induced occupation of this level leads to time-dependent effects at T<120 K. The activated thermal electron emission over a potential barrier E<sb>B = 300×30 meV gives clear evidence for a large lattice relaxation around the impurity centers characteristic for DX-like behavior.     

Electrical conductivity in HMTSF-TNAP under pressure

The resistivity of the organic conductor HMTSF-TNAP has been measured at pressures up to 25 kbar and at temperatures down to 1.2 K. Under pressure the increase in the stacking axis resistivity of HMTSF-TNAP (Δ^2,2 -Bi(4,5-trimethylene-1,3-diselenole)-11,11′,12,12′-tetracyano-2m6- naphtoquinodimethane) below 47 K is reduced, although the transition temperature T_p falls at only 0.7 K kbar^?1. This weak pressure dependence compared to that of HMTSF-TCNQ correlates with the larger resistivity anisotropy in the TNAP salt.     

Superconductivity in α- and ω-Zirconium under high pressure

The pressure dependence of the superconducting transition temperatureT _c (p) of α-Zr has been investigated in both solid and liquid pressure transmitting media. Up to about 45 kbardT _c /dp was measured to be + 3.5 × 10^?6 K/bar. Cold working at 4.2 K produced a strong irreversible effect onT _c . The superconductivity of the high pressure phase, ω-Zr, has been studied in its region of stability, i.e. above 60 kbar. For ω-Zr,dT _c /dp=+7.7 × 10^?6K/bar, andT _c (0)=0.72 K (by extrapolation).     

Charge transport and pressure dependence of Tc of single crystal,ferromagnetic EuB6

We present Hall Effect and resistivity data which demonstrate that EuB₆ is a degenerate semiconductor transforming into a metal or semimetal below the ferromagnetic ordering temperature, T_c = 13.7K. We also report an anomalously large, positive pressure dependence of T_c, (1/T_c)(ΔT_c/ΔP) ? 4 × 10^?2 kbar^?1.